• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.120-126
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• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.925-928
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• 2011

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.

• 한국세라믹학회지
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• 제39권9호
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• pp.863-870
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• 2002

$Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Ta^{5+}$을 $Ta^{5+}$과 이온반경이 같고 원자량이 약 1/2배인 $Nb^{5+}$으로 치환한 $Pb{{Fe_{1/2}(Ta_(1-x)Nb_x)_{1/2}}O_3$ (x=0.0∼1.0) 고용체를 단일상으로 합성하여 그 유전특성 및 B자리 양이온 질서배열구조를 조사하였다. $Pb(Fe_{1/2}Ta_{1/2})O_3$는 유전완화현상 및 완만한 상전이가 뚜렷하게 관찰되는 전형적인 완화형 강유전특성을 보였지만, $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 유전완화현상은 감소하고 상전이는 급격해져 결국 $Pb(Fe_{1/2}Nb_{1/2})O_3$는 유전완화현상이 전혀 관찰되지 않는 정상 강유전특성을 보였다. Raman 분광법에 의해 $Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Fe^{3+}$과 $Ta^{5+}$은 XRD는 물론 TEM의 제한시야회절패턴으로도 검출하기 어려울 정도의 단거리영역에서 화학양론적으로 1:1 질서배열하고 있으며, $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 $Fe^{3+}$과 ($Ta^{5+}-Nb^{5+}$) 간의 질서배열은 약화되어 결국 $Pb(Fe_{1/2}Nb_{1/2})O_3$의 $Fe^{3+}$과 $Nb^{5+}$은 완전 무질서배열하고 있음이 밝혀졌다. $Pb(Fe_{1/2}Ta_{1/2})O_3$의 완화형 강유전특성은 B자리 양이온들이 XRD는 물론 TEM의 제한시야회절패턴으로도 검출하기 어려울 정도의 단거리영역에서 화학양론적 1:1 질서배열을 하고 있는 것과, 또 $Pb(Fe_{1/2}Ta_{1/2})O_3$의 $Ta^{5+}$이 $Nb^{5+}$으로 치환됨에 따라 완화형 강유전특성이 감소되는 것은 이 질서배열이 약화되는 것과 그리고 $Pb(Fe_{1/2}Nb_{1/2})O_3$의 정상 강유전특성은 B자리 양이온들이 완전 무질서배열을 하고 있는 것과 연관지을 수 있었다.

• Bulletin of the Korean Chemical Society
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• 제21권7호
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• pp.679-684
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• 2000

The Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 compounds, both with Ruddlesden-Popper structures, have been synthesized by the ceramic method at $1150^{\circ}C$ under atmospheric pressure. The crystallographic structure of the compounds was assigned to the tetr agonal system with space group 14/mmm by X-ray diffraction(XRD) Rietveld refinement. The reduced lattice volume and lattice parameters increased as the Ta with 5d substitutes for the Nb with 4d in the compounds. The Co/Nb(Ta)O bond length has been determined by X-ray absorption spectroscopic(EXAFS/XANES) analysis and the XRD refinement. The CoO6,octahedra were tetragonally distorted by elongation of Co-O bond along the c-axis. The magnetic measurement shows the compounds Sr2Co0.5Nb(Ta)0.5O4 and Sr3CoNb(Ta)O7 have paramagnetic properties and the Co ions with intermediate spin sates between high and low spins in D4h symmetry. All the compounds showed semiconducting behavior whose electrical conductivity increased with temperature up to 1000 K. The electrical conductiviy increased and the activation energy for the conduction decreased as the number of perovskite layers increased in the compounds with chemical formula An+1BnO3n+1.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.517-520
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• 2010

Lead-free $0.9(Na_{0.52}K_{0.48})NbO_3$ - $0.1LiTaO_3$ piezoelectric ceramics doped with $Ag_2O$ (0-4 mol%) have been prepared by the conventional mixed oxide method. The structural and electrical properties were analyzed in order to find its potential applications. The crystal structure of 1-4 mol% Ag doped $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ lead free piezoelectric ceramics were investigated for several sintering temperatures ($1100^{\circ}C$) by the use of X-ray diffraction analysis. In order to analyze the effect of Ag dopants on the $0.9(Na_{0.52}K_{0.48})NbO_3$-$0.1LiTaO_3$ ceramic, the diffraction intensity ratio of the (002) to (200) planes were calculated from the X-ray diffraction patterns of the ceramic samples.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1420-1421
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• 2006

In this study, structural and micowave dielectric properties of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceeramics. The specimens are prepared through the solid-state route. According to the XRD pattern, $Mg_{4}Ta_{2}O_9$ and $MgTa_{2}O_6$ phase exist in calcined and sintered $Mg_{5}Ta_{4}O_{15}$ powder. Also $Mg_{5}Ta_{4}O_{15}$ phase added with increasing sintering temperature. In the case of calcined and sintered $Mg_{5}Nb_{4}O_{15}$ powder, single phase of $Mg_{5}Nb_{4}O_{15}$ were appeared. The bulk density and quality factor of the $Mg_{5}B_{4}O_{15}$ (B=Ta, Nb) ceramics were increased with sinteming temperature in $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased in another sintering temperature. Dielectric constant of the $Mg_{5}Ta_{4}O_{15}$ ceramics was increased continuously with increasing of sintering temperature. And the dielectric constant of the $Mg_{5}Nb_{4}O_{15}$ ceramics was increased in $1400^{\circ}C{\sim}1450^{\circ}C$ but decreased in $1475^{\circ}C$. In the case of the $Mg_{5}Ta_{4}O_{15}$ and $Mg_{5}Nb_{4}O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, -10.91 $ppm/^{\circ}C$ and 14, 37,350 GHz, -52.3 $ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.89-89
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• 2009

In this study, the structural characteristics and the electrical properties of $Ag(Ta,Nb)O_3$ ceramics were investigated. Compound ceramics were fabricated by the mixed oxide method. The sintering temperature was 1200 $^{\circ}C$. The dielectric properties of $Ag(Ta,Nb)O_3$ ceramics were measured from 1 kHZ to 1 MHz. The electrical properties of $Ag(Ta,Nb)O_3$ ceramics were investigated at the various temperature ranges.

• 대한화학회지
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• 제27권6호
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• pp.424-482
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• 1983

분석시료에 일정량의 표준물을 첨가한 후 희석제로 묽히는 방법을 이용하여 주석슬랙중의 $Ta_2O_5$,$Nb_2O_5$ 및 $SnO_2$를 X-선 분광 분석법으로 정량하였다. 희석제로는 $SiO_2$와 $Fe_2O_3$를 사용하였으며 첨가시료와 1:1의 비로 희석 시켰다. $Ta_2O_5$와 $SnO_2$ 의 분석결과는 $Fe_2O_3$보다 $SiO_2$로 희석시킨 것이 표준 검정곡선법에 의해 얻은 분석값과 더 잘 일치하고, $Nb_2O_5$는 이와 반대로 $SiO_2$보다 $Fe_2O_3$로 희석시킨 것이 더 잘 일치함을 보여주었다.

• Advances in materials Research
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• 제2권3호
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• pp.173-180
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• 2013

Lead-free complex perovskite ceramics $NaMeO_3$ ($Me{\equiv}Nb$, Ta) were synthesized using conventional solid state reaction technique and characterized by structural, FTIR and electrical (dielectric and ac conductivity) studies. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of single-phase orthorhombic structure with the space group Pmmm (47). Dielectric studies showed the diffuse phase transition at $394^{\circ}C$ for $NaNbO_3$ and $430^{\circ}C$ for $NaTaO_3$. Ac conductivity in both the compounds follows Jonscher's power law.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).