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http://dx.doi.org/10.4313/JKEM.2011.24.11.925

An Investigation on the Dielectric and Microwave Properties of Ag(Ta,Nb)O3 Thick Films on the Alumina Substrates  

Lee, Ku-Tak (Department of Electronic Materials Engineering, Kwangwoon University)
Koh, Jung-Hyuk (Department of Electronic Materials Engineering, Kwangwoon University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.11, 2011 , pp. 925-928 More about this Journal
Abstract
Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials $Ag(Ta,Nb)O_3$ thick film. In this study, we have fabricated the $Ag(Ta,Nb)O_3$ thick film on the $Al_2O_3$ substrates by screen printing method. The $Ag(Ta,Nb)O_3$ thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150$^{\circ}C$, 2 hr. The electrical properties of $Ag(Ta,Nb)O_3$ thick film were investigated at 30~100$^{\circ}C$.
Keywords
$Ag(Ta,Nb)O_3$; Thick films; XRD; NTCR;
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