• 한국전기전자재료학회논문지
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• 제19권3호
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• pp.250-254
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• 2006

Hetero-junction sheet actuator composed of carbon nanotubes and $V_{2}O_5$ nanowires were demonstrated in a bimetal configuration. The successive filtration of $V_{2}O_5$ nanowire solution followed by carbon nanotube dispersed water solution in the same way produced a dark-gray colored sheet. A significant actuation was observed in sodium chloride electrolyte solution with a bending direction to the carbon nanotube side at the positive bias voltage against the copper counter-electrode. As the frequency of the applied voltage increased, the amplitudes decreased, indicating a rather slow response of the hetero-film actuator in the electrolyte solution. The hybrid structure enabled an easy fabrication of the film actuator with the enhanced efficiencies.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.66-69
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• 2017

Physically implanted surface islands of Nano Carbon Tube (NCT) and ${\alpha}-F_2O_3$ particles have been produced on Al-doped ZnO (AZO)/glass surfaces by simple and direct ND:YAG laser beam irradiation. Sheet resistance of the reconstructed surface increased by about 3.6% of over AZO. Minimal surface damage can be repaired by ND:YAG laser beam irradiation in conjunction with proper impurities. Implanted islands of NCT, which are considered to be a good conductive impurity, on AZO increased the sheet resistance by about 1.8%, while implanted islands of ${\alpha}-F_2O_3$, an insulating impurity, on AZO increased sheet resistance by about 129% compared with a laser beam treated AZO. This study provides insight regarding surface implantations of nanowires and micro-circuits, doping effects for semiconductors and optical devices, surface area and impurity effects for catalysis.

• 한국재료학회지
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• 제25권6호
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• pp.265-268
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• 2015

ZnO micro/nanocrystals at large scale were synthesized through the thermal evaporation of Al-Zn mixtures under air atmosphere. The effect of synthetic temperature and time on the morphology of the micro/nanocrystals was examined. It was found that the temperature and time affected the morphology of the ZnO crystals. At temperatures below $900^{\circ}C$, no crystals were synthesized. At a temperature of $1000^{\circ}C$, ZnO crystals with a rod shape were synthesized. With an increase in temperature from $1000^{\circ}C$ to $1100^{\circ}C$, the morphology of the crystals changed from rod shape to wire and granular shapes. As the time increased from 2 h to 3 h at $1000^{\circ}C$, tetrapod-shaped ZnO crystals started to form. XRD patterns showed that the ZnO crystals had a hexagonal wurtzite structure. EDX analysis revealed that the ZnO crystals had high purity. It is believed that the ZnO nanowires were grown via a vapor-solid mechanism because no catalyst particles were observed at the tips of the micro/nanocrystals in the SEM images.

• 마이크로전자및패키징학회지
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• 제26권3호
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• pp.37-41
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• 2019

Ag나노와이어 도전성 잉크를 플렉서블한 투명 기판 위에 코팅 후 이러한 여분의 유기물을 $O_2$ 플라즈마를 이용하여 제거함으로써 Ag 나노와이어를 이용한 투명전극의 면저항과 광학적 특성을 최적화하였다. Ag 나노와이어 도전성 잉크를 코팅한 후 30초간 $O_2$ 플라즈마 처리를 하였을 때 면저항은 최대 27 % 정도 감소하였으며, 잔류 유기물의 제거를 통하여 그 광학적 특성도 향상됨을 알 수 있었다. 또한 $O_2$ 플라즈마 처리 시간이 30초 이상 증가할 경우 그 면저항이 오히려 감소함을 확인하였는데, 이는 과도한 $O_2$ 플라즈마로 인하여 Ag나노와이어의 degradation이 일어나는데 그 원인이 있음을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.69-69
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• 2010

The research is the structural and optical characteristics of the Cadmium Sulfide(CdS) film, nanowires and nanobelts grown on the $Al_2O_3$ substrate using the vapor phase epitaxy method. The field-emission scanning electron microscopy(FE-SEM) were used to identify the shape of the surface of the nanostructures and x-ray diffraction(XRD) and transmission electron microscopy (TEM) were used to evaluate the structural characterisitcs. As a result, the XRD was confirmed the CdS peak and the substrate peak and TEM showed single crystals with wurtzite hexagonal structure on the nanostructures. As for the optical characteristic of the nanostructures, photoluminescence(PL) and micro-raman spectrum were measured. The PL measurements confirmed the emission peak related bound exciton to neutral donor($D^0X$) peak and free exciton(FX) peak. The micro-raman spectrum showed that the peak of the nanostructures were similar to the pure crystalline CdS peak and each peak were overtone of LO phonon of the hexagonal CdS of the longitudinal optical(LO) phonon mode. Therefore, it is confirmed that the CdS nanostructures grown in this research have superior crystallinity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• 한국진공학회지
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• 제18권4호
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• pp.259-265
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• 2009

본 연구에서는 열증착법을 이용하여 합성된 단결정의 산화아연 나노선들을 이용하여 전계효과트랜지스터를 제작하여 광학, 표면반응 및 전기화학적인 거동들에 대한 기초 연구들을 수행하였다. 100 nm의 지름과 길이 5 um 길이를 갖는 단결정 산화아연나노선의 전자 농도와 이동도는 각각 $1.30{\times}10^{18}cm^{-3}$과 $15.6cm^2V^{-1}s^{-1}$이었으며, 자외선을 나노선에 조사한 경우 약 400배 정도 전류가 증가하였다. 또한 나노선들은 여러 농도의 수소와 일산화탄소에 대해 잘 알려진 표면반응으로 기인한 기체 감지 특성을 보였고, 0.1 M NaCl 전해질 내에서 전형적인 산화아연의 나노선의 전기적 특성을 유지함을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.289-289
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• 2013

While there are plenty of studies on synthesizing semiconducting germanium nanowires (Ge NWs) by vapor-liquid-solid (VLS) process, it is difficult to inject dopants into them with uniform dopants distribution due to vapor-solid (VS) deposition. In particular, as precursors and dopants such as germane ($GeH_4$), phosphine ($PH_3$) or diborane ($B_2H_6$) incorporate through sidewall of nanowire, it is hard to obtain the structural and electrical uniformity of Ge NWs. Moreover, the drastic tapered structure of Ge NWs is observed when it is synthesized at high temperature over $400^{\circ}C$ because of excessive VS deposition. In 2006, Emanuel Tutuc et al. demonstrated Ge NW pn junction using p-type shell as depleted layer. However, it could not be prevented from undesirable VS deposition and it still kept the tapered structures of Ge NWs as a result. Herein, we adopt $C_2H_2$ gas in order to passivate Ge NWs with carbon sheath, which makes the entire Ge NWs uniform at even higher temperature over $450^{\circ}C$. We can also synthesize non-tapered and uniformly doped Ge NWs, restricting incorporation of excess germanium on the surface. The Ge NWs with carbon sheath are grown via VLS process on a $Si/SiO_2$ substrate coated 2 nm Au film. Thin Au film is thermally evaporated on a $Si/SiO_2$ substrate. The NW is grown flowing $GeH_4$, HCl, $C_2H_2$ and PH3 for n-type, $B_2H_6$ for p-type at a total pressure of 15 Torr and temperatures of $480{\sim}500^{\circ}C$. Scanning electron microscopy (SEM) reveals clear surface of the Ge NWs synthesized at $500^{\circ}C$. Raman spectroscopy peaked at about ~300 $cm^{-1}$ indicates it is comprised of single crystalline germanium in the core of Ge NWs and it is proved to be covered by thin amorphous carbon by two peaks of 1330 $cm^{-1}$ (D-band) and 1590 $cm^{-1}$ (G-band). Furthermore, the electrical performances of Ge NWs doped with boron and phosphorus are measured by field effect transistor (FET) and they shows typical curves of p-type and n-type FET. It is expected to have general potentials for development of logic devices and solar cells using p-type and n-type Ge NWs with carbon sheath.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2016년도 임시총회 및 하계학술연구발표회
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• pp.165-166
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• 2016

• Applied Microscopy
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• 제49권
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• pp.1.1-1.10
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• 2019

Joints of three-dimensional (3D) rutile-type (r) tin dioxide ($SnO_2$) nanowire networks, produced by the flame transport synthesis (FTS), are formed by coherent twin boundaries at $(101)^r$ serving for the interpenetration of the nanowires. Transmission electron microscopy (TEM) methods, i.e. high resolution and (precession) electron diffraction (PED), were utilized to collect information of the atomic interface structure along the edge-on zone axes $[010]^r$, $[111]^r$ and superposition directions $[001]^r$, $[101]^r$. A model of the twin boundary is generated by a supercell approach, serving as base for simulations of all given real and reciprocal space data as for the elaboration of three-dimensional, i.e. relrod and higher order Laue zones (HOLZ), contributions to the intensity distribution of PED patterns. Confirmed by the comparison of simulated and experimental findings, details of the structural distortion at the twin boundary can be demonstrated.