• Transactions of Materials Processing
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• v.28 no.1
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• pp.43-48
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• 2019

Aluminum nitride (AlN) is used by the semiconductor industry, and is a compound that is required when manufacturing high thermal conductivity. The AlN films with c-axis orientation and thermal conductivity characteristic were deposited by using the Pulsed Laser Deposition (PLD). The AlN thin films were characterized by changing the deposition conditions. In particular, we have researched the AlN thin film deposited under optimal conditions for growth atmosphere. The epitaxial AlN films were grown on sapphire ($c-Al_2O_3$) single crystals by PLD with AlN target. The AlN films were deposited at a fixed temperature of $650^{\circ}C$, while conditions of nitrogen ($N_2$) pressure were varied between 0.1 mTorr and 10 mTorr. The quality of the AlN films was found to depend strongly on the $N_2$ partial pressure that was exerted during deposition. The X-ray diffraction studies revealed that the integrated intensity of the AlN (002) peak increases as a function the corresponding Full width at half maximum (FWHM) values decreases with lowering of the nitrogen partial pressure. We found that highly c-axis orientated AlN films can be deposited at a substrate temperature of $650^{\circ}C$ and a base pressure of $2{\times}10^{-7}Torr$ in the $N_2$ partial pressure of 0.1 mTorr. Also, it is noted that as the $N_2$ partial pressure decreased, the thermal conductivity increased.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.35-40
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• 1993

A FET(field effect transistor) type lipid sensor was fabricated uy immobilizing lipase enzyme on the gate of pH-ISFET($SiO_{2}/Si_{3}N_{4}$). A water soluble polymer, polyvinyl alcohol(PVA) was modified with 1-methyl-4-(formyl-styryl) pyridinium methosulfate(SbQ) to give a photosensitive membrane(PVA-SbQ) in which lipase was immobilized. The optimum photolithographic conditions were ; spin coating speed $5,000{\sim}6,000$ rpm. UV exposure time $20{\sim}30$ seconds, developing time in water $30{\sim}40$ seconds, and vacuum drying time 45 min. at room temperature with the suspension containing PVA-SbQ aqueous solution(SbQ 1mol%, 10 wt %) $200{\mu}L$, bovine serum albumin (BSA) 7.5 mg, and lipase 10 mg. The lipid sensor showed good linear calibration curve in the range of $10{\sim}100$ mM triacetin as a lipid sample.

• Progress in Superconductivity
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• v.9 no.1
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• pp.102-106
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• 2007

YBCO films have been synthesized using a spray pyrolysis method. We used nitrates of Y, Ba, Cu as precursors. Deposition was made on $LaAlO_3$ (100) single crystal substrate by spraying the mist of aqueous precursor solution generated by a concentric nozzle. The distance between concentric nozzle and substrate was 15 cm. C-axis oriented films were obtained at deposition temperature of $740{\sim}800^{\circ}C$ and working pressure of 20 Torr. Oxygen partial pressure was 3 Torr and substrate was transported with the speed ranging from 0.23 cm/min to 0.7 cm/min by reel to reel. Scanning electron microscope (SEM) and X-ray diffraction (XRD) observation revealed that films are smooth and highly textured with (001) planes parallel to substrate. Highest critical current density (Jc) was $1.38\;MA/cm^2$ at 77K and self-field for the film with a thickness of $0.5\;{\mu}m$ prepared at a substrate temperature of $780^{\circ}C$ and $PO_2\;=3\;Torr$. The effect of temperature on the microstructure and YBCO phase formation will be discussed.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.274-281
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• 1999

Usually sputtering and electroless plating methods were used for manufacturing metal-alloy thin film magnetic memory devices. Since electroless plating method has many merits in mass production and product variety com­pared to sputtering method, many researches about electroless plating have been performed in the United State of America and Japan. However, electroless plating method has not been studied frequently in Korea. In these respects the purpose of this research is manufacturing Co-Mn-P alloy thin film on the corning glass 2948 by electroless plating method using sodium hypophosphite as a reductant, and analyzing deposition rate, alloy composition, microstructure, and magnetic characteristics at various pH's and temperatures. For Co-P alloy thin film, the reductive deposition reaction 0$\alpha$urred only in basic condition, not in acidic condition. The deposition rate increased as the pH and temperature increased, and the optimum condition was found at the pH of 10 and the temperature of $80^{\circ}C$. Also magnetic charac­teristics was found to be most excellent at the pH of 9 and the temperature of $70^{\circ}C$, resulting in the coercive force of 8700e and the squareness of 0.78. At this condition, the contents of P was 2.54% and the thickness of the film was $0.216\mu\textrm{m}$. For crystal orientation, we could not observe fcc for $\beta$-Co. On the other hand,(1010), (0002), (1011) orientation of hcp for a-Co was observed. We could confirm the formation of longitudinal magnetization from dominant (1010) and (1011) orientation of Co-P alloy. For Co-Mn-P alloy deposition, coercive force was about 1000e more than that of Co P alloy, but squareness had no difference. For crystal orientation, (l01O) and (lOll) orientation of $\alpha$-Co was dominant as same as that of Co- P alloy. Likewise we could confirm the formation of longitudinal magnetization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.249-249
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• 2009

We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.335-340
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• 2013

In this study, the plasma etching of the TaN thin film with $CH_4/BCl_3/Ar$ gas chemistries was investigated. The etch rate of the TaN thin film and the etch selectivity of TaN to $SiO_2$ was studied as a function of the process parameters, including the amount of $CH_4$. X-ray photoelectron spectroscopy (XPS) and Field-emission scanning electron microscopy (FE-SEM) was used to investigate the chemical states of the surface of the TaN thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.1
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• pp.8-13
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• 2014

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

• Progress in Superconductivity
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• v.8 no.1
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• pp.65-70
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• 2006

We fabricated $YBa_2Cu_33O_{7-x}$(YBCO) films on(00l) $LaAlO_3$ substrates prepared by metal organic deposition(MOD) method using trifluoroacetate(TFA) solution and evaluated the effects of the humidity on the microstructure, phase purity, and critical properties. The films calcined at $430^{\circ}C$ were fired at $775^{\circ}C$ at 0%, 4.2%, 12.1%, and 20.0% humidified As gas mixed with 0.1% $O_2$. We observed that the amount of $BaF_2$ phase was effectively reduced and that a sharp and strong biaxial texture formed under a humidified atmosphere, leading to increased critical properties. For the films fired at 0% humidity, the $T_c\;and\;I_c$ were undetectably small. When the humidity was increased to 4.2%, the corresponding $T_c$(onset) and $I_c$ were increased to 90.5 K and 8 A/cm-width, respectively. For the films at the humidity range of 12.1-20.0%, the $I_c$ was found to be 35 A/cm-width. According to the results of the XRD, pole-figure, and SEM, these improved critical properties are probably attributed to the formation of a purer YBCO phase, larger grain size, and stronger c-axis orientation.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2544-2546
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• 1998

The electrical and physical charateristics of Pt-Co alloy thin films on $Al_2O_3$ substrate, deposited by r.f cosputtering respectively, were analyzed with thickness of thin films ($1700{\sim}10000{\AA}$) and increasing annealing temperature ($800{\sim}1000^{\circ}C$). At input power of Pt : 4.4 W/$cm^2$, Co : 6.91 W/$cm^2$, working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$) and 60 min, the resistivity and sheet resistivity of Pt-Co thin films with thickness of $3000{\AA}$ was $15{\mu}{\Omega}{\cdot}cm$ and 0.5 ${\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value of 3850 ppm/$^{\circ}C$ in temperature range($200{\sim}400^{\circ}C$) is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. The thermal charateristics of Pt-Co micro heaters were analysed with Pt-Co RTD integrated on the same substrate. In the analysis of characteristics of Pt-Co micro heaters, the Pt-Co micro heaters with thickness of $3000{\AA}$ and annealing temperature of $1000^{\circ}C$ had a good linearity and temperature is up to $468.2^{\circ}C$ with 2.1 watts of the heating power.

• Progress in Superconductivity
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• v.7 no.2
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• pp.135-139
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• 2006

We fabricated YBCO coated conductors (CCs) by TFA-MOD process and evaluated microstructure, texture formation, and critical temperature ($T_c$) and current ($I_c$). YBCO precursor solution was synthesized using metal-trifluoroacetates and dip coated on $LaAlO_3$(LAO) substrate. The phase formation and microstructure was characterized by X-ray diffraction and scanning electron microscopy (SEM) and the degree of texture was evaluated by pole-figure analysis. The CC was heat-treated in various calcining temperatures ($370^{\circ}C-460^{\circ}C$) and firing temperatures ($750^{\circ}C-800^{\circ}C$). As fired at $775^{\circ}C$ for 4h, the CC had the highest $T_c$ of 89.5 K and $I_c$ of 40 A/cm-width ($J_c=2.0\;MA/cm^2$). Microstructural observation indicated that the YBCO film was dense and homogeneous and had a strong cube texture without formation of second phase and its in-plane full-width at half-maxima; $5.2^{\circ}$ under optimum condition.