• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.116-124
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• 2009

Our computational studies for the physical vapor transport crystal growth of $Hg_2Cl_2-Cl_2$ system evidence suggests that the PVT growth process exhibits the diffusion-dominated behaviors for aspect ratios more than and equal to 10, which would provide purely diffusive transport conditions adequate to microgravity environments less than $10^{-3}g_0$. Also, the regimes of high temperature difference based on the fixed source temperature of $380^{\circ}C$, where ${\Delta}T$ is relatively large enough for the crystal growth of mercurous chloride, the transport rates do not keep increasing with ${\Delta}T$ but tend to some constant value of $2.12\;mole\;cm^{-2}s^{-1}$. For the aspect ratios of 5, 10, and 20, the transport rate is directly proportional to the total pressure of the system under consideration. For Ar = 5, the rate is increased by a factor of 2.3 with increasing the total pressure from 403 Torr to 935 Torr, i.e., by a factor of 2.3. For both Ar = 10 and 20, the rate is increased by a factor of 1.25 with increasing the total pressure from 403 Torr to 935 Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.110-115
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• 2023

During the Hg₂Br₂ physical vapor transport process, with increasing the partial pressure of component B, P_B from 40 Torr to 200 Torr, a unicellular convective flow structures move from the crystal growth region to the center region in the vapor phase. The boundary layer flow is dominant for P_B = 40 Torr, and the core region flow is dominant for P_B = 200 Torr. The flow in the vapor phase shows a three-dimensional convective flow structure with a single cell (unicellular) for P_B = 40 Torr and 200 Torr, exhibits an asymmetrical flow with respect to the x, y central axis under the horizontally oriented configuration with an aspect ratio (length-to-width) of 3 and linear conducting walls. The critical temperature difference between the source and crystal region is about 30 K. The total molar flux of Hg₂Br₂ increases with the temperature difference until the total molar flux reaches the critical value. At the critical total molar flux, the total molar flux abruptly decreases.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.16-24
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• 2022

A computational study of combined thermal and solutal convection (double diffusive convection) in a sealed crystal growth reactor is presented, based on a two-dimensional numerical analysis of the nonlinear and strongly coupled partial differential equations and their associated boundary conditions. The average Nusselt numbers for the source regions are greater than those at the crystal regions for 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵. The average Nusselt numbers for the source regions varies linearly and increases directly with the thermal Grashof number form 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵ for aspect ratio, Ar (transport length-to-width) = 1 and 2. Additionally, the average Nusselt numbers for the crystal regions at Ar = 1 are much greater than those at Ar = 2. Also, the occurrence of one unicellular flow structure is caused by both the thermal and solutal convection, which is inherent during the physical vapor transport of Hg₂Br₂. When the aspect ratio of the enclosure increases, the fluid movement is hindered and results in the decrease of thermal buoyancy force.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.302-308
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• 2015

Isothermal vapor liquid equilibria for the binary system of 3-methylpentane with ethylene glycol monopropyl ether ($C_3E_1$) and ethylene glycol isopropyl ether ($iC_3E_1$) were measured at 303.15, 318.15, and 333.15K. In our previous work, phase equilibria for the binary system of $C_3E_1$ mixtures were investigated according to the chain length of alkane, alcohol or those isomer. But in this study, we discussed the different effect of $C_3E_1$ and its isomer, $iC_3E_1$, on the phase equilibria. The measured systems were correlated with a Peng-Robinson equation of state (PR EOS) combined with Wong-Sandler mixing rule for the vapor phase, and NRTL, UNIQUAC, and Wilson activity coefficient models for the liquid phase. All the measured systems showed good agreement with the correlation results. And it was found that the phase equilibria showed very little difference between the $iC_3E_1$ mixture system and the $C_3E_1$ mixture system.

• Journal of the Korean Ceramic Society
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• v.33 no.1
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• pp.25-34
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• 1996

Yttria stabilized zirconia (YSZ) thin films were prepared by the electrochemical vapor deposition (EVD) method on the porous Al2O3 substrates which were fabricated by different substrate thickness and porosity. Film growth rates decreased with increase on the substrate thickness and porosity and obeyed a parabolic rate law. Activa-tion energy calculated from the parabolic rate onstants was 69.9 kcal/mol. With increase on the deposition time, monoclinic phase was appeared and then disappeared. YSZ penetrated deeply into substrates when the EVD temperature decreased. Electrical conductivity of the films was 0.09 S/cm at 100$0^{\circ}C$ similar to the value of YSZ single crystal.

• Korean Journal of Materials Research
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• v.9 no.3
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• pp.295-300
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• 1999

액상의 Ga으로부터 공급되느 기체상태의 Ga과 $NH _3$를 $1050~1150^{\circ}C$의 온도범위에서 직접 반응시켜 사파이어 기판위에 직경이 5~27$\mu\textrm{m}$이고, 높이가 $2~27\mu\textrm{m}$인 육각기둥 형태의 GaN 결정을 성장하였다. GaN 결정의 성장 초기에는 c-축 방향으로 우선 성장된 후 성장시간과 성장온도 및 $NH_3$의 유량이 증가함에 따라 기체상태의 Ga공급이 제한됨으로써 성장률이 둔화됨과 동시에 $\alpha$-축 방향으로 우선 성장되었다. GaN 결정의 크기가 증가함에 따라 결정의 품질이 개선되어 X-선 회절강도와 중성도너에 구속된 엑시톤 관력 발광밴드 (I\ulcorner)의 강도가 증가하고, I\ulcorner 발광밴드의 반치폭이 감소하였다.

• Journal of the Korean institute of surface engineering
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• v.23 no.2
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• pp.18-23
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• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• Solar Energy
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• v.5 no.2
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• pp.46-53
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• 1985

Hydrogenated amorphous silicon solar cells which are fabricated by photo-chemical vapor deposition (photo-CVD) system has been investigated. In the photo-CVD system which consists of three separate reaction chambers, low-pressure mercury lamp has been used as a light source. The main reactant ($Si_2H_6/He$) gases which are premixed with a small amount of mercury vapor in a mercury-vaporizer kept at $50^{\circ}C$ have been used. Using $C_2H_2$ and $SiH_2(CH_3)_2$ as the carbon source, p-type wide band gap a-SiC:H films have been obtained. The result has been found that the undoped layers of the pin/substrate solar cells are influenced by the residual impurities, such as phosphorus and boron during the deposition process. By minimizing the effect of the impurities in the i-layer and optimizing conditions at the p-layer and p/i interface, the energy conversion efficiency of 9.61 % under AM-1 ($100mW/Cm^2$) has been achieved for pin/substrate solar cells illuminated through their p-layers, using the three separate reaction chamber apparatus. It is expected that a-SiC:H solar cells with the energy conversion efficiency over 10% have been fabricated by Photo-CVD method.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.195-195
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• 2010

$Ga_2O_3$ thin films have been grown on Si(001) substrates by metalorganic chemical vapor deposition (MOCVD) using dimethylgallium isopropoxide ($Me_2GaO^iPr$, DMGIP) with oxygen as the reactant gas. Suitability of the precursor for CVD was confirmed by thermogravimetric analysis (TGA) and vapor pressure measurement. Deposition was carried out in the substrate temperature range $450-650^{\circ}C$. Spectroscopic ellipsometry, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering spectroscopy (RBS) were used to determine the thickness, crystallinity, and composition and stoichiometry of the films, respectively. From the slope of the Arrhenius plot in the temperature range $500-550^{\circ}C$, the activation energy of deposition was found to be $225.5\;kJ\;mol^{-1}$. As-deposited films were amorphous, but the monoclinic $\beta-Ga_2O_3$ phase was revealed after annealing the films in air at $1050^{\circ}C$. The XPS and RBS analyses indicate that the $Ga_2O_3$ films obtained by using DMGIP were found to be almost stoichiometric.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.39-47
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• 2009

The effects of thermo-solutal convection on mercurous chloride system of ${Hg_2}{Cl_2}$, and Ne during physical vapor transport are numerically investigated for further understanding and insight into essence of transport phenomena, For $10\;K{\le}{\Delta}T{\le}30\;K$, the growth rate slowly increases and, then is decreased gradually until ${\Delta}T$=50 K, The occurrence of this critical point near at ${\Delta}T$=30 K is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. For the range of $10\;Torr{\le}P_B{\le}300\;Torr$, the rate is second order-exponentially decayed with partial pressures of component B, $P_B$. For the range of $5{\le}M_B{\le}200$, the rate is second order-exponentially decayed with a function of molecular weight of component B, $M_B$. Like the case of a partial pressure of component B, the effects of a molecular weight arc: reflected through the binary diffusivity coefficients, which are intimately related with suppressing the convection flow inside the growth enclosure, i,e., transition from convection to diffusion-dominant flow mode as the molecular weight of B increases. The convective mode is near at a ground level, i,e., on earth (1 $g_0$), and the convection is switched to the diffusion mode for $0.1\;g_0{\le}g{\le}10^{-2}g_0$, whereas the diffusion region ranges from $10^{-2}g_0$ up to $10^{-5}g_0$.