• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.11a
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• pp.179-182
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• 2007

Recently, the circuits of fluorescent light-switches are separated for window-light, middle-lights, or corridor-light, etc in most offices and classrooms in this country. Although it is clean and shiny - more than standard intensity of illumination, it is common that fluorescent lights on the side of window are lighted. In this case, we can use a fluorescent light with a sensor, which is turned on and off automatically according to the amount of sunlight. I think that this plan can save energy, reduce the budget, and increase the effect of education. and so I studied on this plan.

• 제어로봇시스템학회:학술대회논문집
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• 1987.10b
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• pp.364-369
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• 1987

It has recently shown that a solenoid valve can be utilized in a hydraulic position-control system by discontinuous control methods. The objective of this study is to investigate the effects of solenoid valves on the response characteristics of a hydraulic position-control system by applying two kinds of discontinued control methods i.e., Simple On-Off (SOF) and Pusating On-Off(POF) controls. Three types of solenoid valves i.e. low-frequency, closed-center type (LF/C), high-frequency, closed-center type (HF/C), low-frequency, tandem-center type(LF/T) were used in this study. Effects of loading conditions and control parameters on the response characteristics were experimentally examined and compared each other. Pressure transients within the actuator were also studied.

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.6
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• pp.1282-1289
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• 1988

It has recently shown that a solenoid valve can be utilized in a hydraulic position-control system by discontinuous control methods. The objective of this study is to investigate the effects of solenoid valves on the response characteristics of a hydraulic position-control system by applying two kinds of discontinuous control methods i.e., Simple On-Off(SOF) and Pulsating On-Off(POF) controls. Three types of solenoid valves i.e., low-frequency, closed-center type(LF/C), low-frequency, tandem-center type(LF/T) were used in this study. Effects of loading conditions and control parameters on the response characteristics were experimentally examined and compared each other. Pressure transients within the actuator were also studied.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.264-268
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• 2022

High pressure deuterium (HPD) annealing is an advancing technology for the fabrication of modern semiconductor devices. In this work, gate-enclosed FETs are fabricated on a silicon substrate as test vehicles. After a cycle for the HPD annealing, the device parameters such as threshold voltage (V_TH), subthreshold swing (SS), on-state current (I_ON), off-state current (I_OFF), and gate leakage (I_G) were measured and compared depending on the HPD. The HPD annealing can passivate the dangling bonds at Si-SiO₂ interfaces as well as eliminate the bulk trap in SiO₂. It can be concluded that adding the HPD annealing as a fabrication process is very effective in improving device reliability, performance, and variability.

• Journal of the Speleological Society of Korea
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• no.88
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• pp.26-30
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• 2008

The black pollution that was able to include green pollution to appear for the intensity of light by an illumination institution is what after all I cannot ignore, and it may be said that chase thing damage by the isolation action that is white pollution done a long story in this outside a certain range by air quality change, dried present situation is really the environmental disruption by development and a damage phenomenon. If I am replaced in winker and I install a sensor light in the outlet by addition and use the electricity illumination that I installed for a tourist in the cave, it is expected that I can be available all the time that it is possible for electricity reduction more than the present and watches tourist passage plan private business Electric illumination in the cave for the environmental save in the cave because it is possible for more electricity reduction to be particularly off-season than on-season.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.43-50
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• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.9-10
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• 2006

The patterning for the active layer of organic semiconductors is important to attain completely organic-based OTFTs(Organic Thin Film Transistors). We studied on possibility of the application of the conventional photolithography technique to pattern the organic active layer poly(3-hexylthiophene)(P3HT). Patterned P3HT-based OTFTs with Bottom Contact(BC) configuration were fabricated using the conventional photolithography. We achieved field-effect mobilities in the saturation regime ${\sim}1.2{\times}10^{-3}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^5$ in the subtractive method, ${\sim}8{\times}10^{-4}cm^2/V{\cdot}s$, $I_{on/off}$ ratios ${\sim}10^3$ in the additive one.

• Journal of Korea Society of Digital Industry and Information Management
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• v.12 no.3
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• pp.65-74
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• 2016

The Korean resident registration number has been used since 1962 as a personal identification number. The Korean government assigns this number to each korean citizen and it is not able to be changed. In 2000s, as the Internet was rapidly spreaded out, personal information such as the Korean resident registration number, name, home address, and phone number was leaked. The companies provide diverse internet service while collecting personal information. However, personal information was sometimes leaked because of hacking, poor information management and so on. As s results, some of citizens asked government and court of Korea to change the Korean resident registration number because they suffered material damage and emotional distress. The constitutional court decided to be able to change the number from 2018. In this study, the Korean resident registration number which is possible to change, serial number, public certificate, I-PIN, and My-PIN were analyzed comparatively. In addition, considerations when the Korean resident registration number was changed were discussed. The public certificate and I-PIN were appropriate to the case of on-line Korean resident registration number. The Korean resident registration number, serial number, My-PIN were appropriate to the case of off-line Korean resident registration number. Lastly, it would be efficient to manage the Korean resident registration number separately such as on-line and off-line.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.40-44
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• 2000

Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.