• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.12
• /
• pp.38-43
• /
• 1994

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.206.2-206.2
• /
• 2013

무기물/유기물 나노복합체로 제작한 유기 쌍안정성 형태의 메모리 소자는 공정이 단순하고 뛰어난 유연성을 갖고 있기 때문에 플렉서블 메모리 소자에서 많은 연구가 진행되고 있다. 그러나 다양한 연구에도 불구하고 절연성 고분자 박막 내부에 분산 된 나노입자를 이용하여 제작한 저항성 구조의 비휘발성 메모리 소자의 전하수송 메커니즘에 대한 연구는 미흡하다. 본 연구에서는 CuInS2 (CIS)/ZnS 나노입자가 분산되어 있는 절연성 고분자 박막을 사용한 기억소자의 전하수송 메커니즘을 규명하였다. 본 연구는 indium-tin-oxide (ITO)가 코팅된 플렉서블 polyethylene terephthalate (PET) 기판을 화학물질로 세척한 후 CIS/ZnS 나노입자와 절연성 고분자인 poly(N-vinylcarbazole)가 혼합된 용액을 스핀코팅 방법으로 도포했다. 도포된 용액에 열처리를 하여 용매를 제거한 후, 형성된 박막을 저항 변화 층으로 사용하였다. 제작된 메모리 소자는 Al 상부 전극을 고 진공에서 열 증착 방식을 이용하여 PET/ITO/CIS-ZnS 나노입자가 분산된 절연성 고분자/Al 구조를 갖는 저항성 기억 소자를 제작하였다. 소자의 전류-전압 (I-V) 특성 결과는 같은 전압에서 전도도가 높은 상태 (ON)와 낮은 상태 (OFF)가 존재하는 걸을 관찰하였다. 실험을 통해 두 상태 변화를 일으키는 일정 전압을 가하기 전까지 각각의 ON 또는 OFF 상태를 계속 유지하여 비휘발성 메모리 소자로 활용할 수 있음을 확인 할 수 있었다. ON 또는 OFF 상태의 전기적 스트레스를 측정으로 ON과 OFF 상태가 안정성을 가지는 것을 관찰 하였다. I-V 특성 결과를 기초로 메모리 소자의 전하수송 메커니즘을 규명 하였다.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2012.05a
• /
• pp.78.2-78.2
• /
• 2012

최근 PRAM의 집적도 향상 및 3차원 적층에 의한 메모리 용량 향상을 위해 셀 선택 스위치로서 박막형 Ovonic Threshold Switching (OTS) 소자를 적용한 Cross bar 구조의 PRAM이 제안된 바 있다. OTS 소자는 비정질 칼코지나이드를 핵심층으로 하는 2단자 소자로서 고저항의 Off 상태에 특정 값 (문턱스위칭 전압) 이상의 전압을 가해주면 저저항의 On 상태로 바뀌고 다시 특정 값 (유지전압) 이하로 전압을 감소시킴에 따라 고저항의 Off 상태로 복원하는 특성을 갖는다. 셀 선택용 스위치로 적용되기 위해서는 핵심적으로 On-Off 상태간의 가역적인 변화 중에도 재료가 비정질 구조를 안정하게 유지해야 하며 전기적으로는 Off 상탱의 저항이 크고 또한 전류값의 점멸비가 커야 한다. GeSe는 이원계 재료로서 단수한 구성에도 불구하고 OTS 소자가 갖추어야할 기본적인 특성을 가지는 것으로 알려져 있다. 본 연구에서는 GeSe로 구성된 OTS 재료에 경원소인 질소를 첨가하여 비정질 상태의 안정성과 소자특성의 개선 효과를 조사하였다. RF-puttering 시 Ar과 $N_2$의 혼합 Gas를 사용하여 조성이 $Ge_{62}Se_{38}$ ($N_2$ : 3%)인 박막을 제작하여 DSC를 통해 결정화온도(Tx)를 확인하였고, $N_2$ gas의 함유량이 각각 1 %, 2 %, 3 %인 $Ge_{62}Se_{38}$인 박막을 전극의 접촉 부 면적이 $10{\times}10\;{\mu}m^2$인 cross-bar 구조의 소자로 제작하여 Threshold switching voltage ($V_{th}$), Delay time ($t_d$), $I_{on}/I_{off}$ 그리고 Endurance 특성을 평가하였다. DSC 분석 결과 $N_2$ 가 3 % 첨가된 GeSe 박막은 Tx가 $371^{\circ}C$에서 $399^{\circ}C$로 증가되었다. $N_2$가 1% 첨가된 GeSe 소자를 측정한 결과 $V_{th}$의 변화 없는 가운데 $I_{on}/I_{off}$이 약 $2{\times}10^3$에서 $5{\times}10^4$로 향상되었다. Endurance 특성 역시 $10^4$에서 $10^5$번으로 향상되었다. $t_d$의 경우 비정질 상태의 저항 증가로 인해 약 50% 증가되었다. 이러한 $N_2$의 첨가로 인한 비정질 GeSe 박막의 변화 원인에 대한 분석 결과를 소개할 예정이다.

• Journal of Korean Society of Water and Wastewater
• /
• v.25 no.3
• /
• pp.407-417
• /
• 2011

Nowadays, the high land use, mainly used for urbanization, is affecting runoff loads of non-point pollutants to increase. According to this fact, increasing runoff loads seems like to appear that it contributes to high ratio of pollution loads in the whole the pollution loads and that this non-point source is the main cause of water becoming worse quality. Especially, concentrated pollutants on the impermeable roads run off to the public water bodies. Also the coefficient of runoff from roads is high with a fast velocity of runoff, which ends up with consequence that a lot of pollutants runoff happens when it is raining. Therefore it is very important project to evaluate the quantity of pollutant loads. In this study, I computed the pollutant loadings depending on time and rainfall to analyze characteristics of runoff while first flush storm water and evaluated the runoff time while first flush storm water and rainfall based on the change in curves on the graph. I also computed contribution ratio to identify its impact on water quality of stream. I realized that the management and treatment of first flush storm water effluents is very important for the management of road's non-point source pollutants because runoff loads of non-point source pollution are over the 80% of whole loads of stream. Also according to the evaluation of runoff loads of first flush storm water for SS, run off time was shown under the 30 minute and rainfall was shown under the 5mm which is less than 20% of whole rainfall. These are under 5mm which is regarded amount of first flush storm water by the Ministry of Environment and it is judged to be because run off by rainfall is very fast on impermeable roads. Also, run off time and rainfall of BOD is higher than SS. Therefore I realized that the management of non-point source should be managed and done differently depending on each material. Finally, the contribution ratio of pollutants loads by rainfall-runoff was shown SS 12.7%, BOD 12.7%, COD 15.9%, T-N 4.9%, T-P 8.9%, however, the pollutants loads flowing into the steam was shown 4.4%. This represents that the concentration of non-point pollutants is relatively higher and we should find the methodical management and should be concerned about non-point source for improvement on water quality of streams.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.11
• /
• pp.1090-1099
• /
• 2004

In this paper a novel design of equilateral-triangular microstrip antenna using PIN diode fur switching the resonant frequency is presented and experimentally studied. The proposed antenna has changed the resonant frequency by length of spur-lines on the patch, and PIN diodes are utilized to switch the spur-line on and off. The shape of the spur-line is changed according to the on and off states of PIN diode and the equilateral triangular microstrip antenna has different resonant frequencies in accordance with them. The resonant frequency is 1.22 GHz with off states since the surface currents flow the periphery of T shape spur-lines, while the resonant frequency is 1.82 GHz with on states since the surface currents are little effect with the conventional equilateral triangular microstrip antenna. The radiation pattern of the proposed antenna has a good linear polarization with the cross polarization of -20 dB both with on and off states.

• Journal of Radiation Protection and Research
• /
• v.25 no.2
• /
• pp.99-107
• /
• 2000

Through the results of off-gas analysis at 3 sampling points in Plasma Arc Melting vitrification pilot plant, it was evaluated the partitioning of spiked materials in off-gas and the decontamination characteristic of off-gas treatment system. Spiked materials are hazard_us heavy metals(Pb, Cd, Hg), radioactive surrogate(Co, Cs) and radioactive materials($^{60}Co,\;^{137}Cs$). Through the Trial burn tests, Decontamination factor of spiked materials in off-gas treatment system is calculated.

• International Journal of Aeronautical and Space Sciences
• /
• v.11 no.4
• /
• pp.303-312
• /
• 2010

This paper introduces the upper stage attitude control system of KSLV-I, which is the first space launch vehicle in Korea. The KSLV-I upper stage attitude control system consists of two electro-hydraulic actuators and a reaction control system using cold nitrogen gas. A proportional, derivative, and integral controller is designed for the electro-hydraulic thrust vectoring system, and Schmidt trigger ON/OFF controllers are designed for the reaction control system. Each attitude controller is designed to have enough stability margins. The stability and performance of KSLV-I upper stage attitude control system is verified via hardware in the loop tests. Hardware in the loop tests are accomplished for perturbed flight conditions as well as nominal flight condition. The test results show that the attitude control loop of KSLV-I upper stage is very stable and the attitude controllers perform well for all flight conditions. Attitude controllers designed in this paper have been successfully applied to the first flight of KSLV-I on August 25, 2009. The flight test results show that all attitude controllers of the KSLV-I upper stage performed well and satisfied the accuracy specifications even during abnormal flight conditions.

• Journal of Medicine and Life Science
• /
• v.19 no.3
• /
• pp.95-102
• /
• 2022

This retrospective study aimed to investigate whether there was a difference in the success rate of removal of residual thyroid tissue in patients with the same cutoff serum thyroglobulin (Tg) value-measured 2 weeks after thyroid hormone withdrawal (THW)-for different radioactive iodine (RAI) activities. We identified 132 patients with papillary thyroid cancer who were treated with total thyroidectomy and RAI therapy to evaluate the efficacy of three radioactivities of I-131: 1,110, 3,700, and 5,550 MBq. Serum Tg testing was performed 1 week before RAI treatment and 2 weeks after THW (pre-Tg); the cutoff pre-Tg level was below 10 ng/mL. Stimulated Tg levels were measured on the day of I-131 administration (off-Tg). After 6 months of treatment, we compared the groups for complete ablation, defined as no uptake on a diagnostic I-131 scan, stimulated Tg level of <1.0 ng/mL, and Tg antibody level of <100 ng/mL. Ninety-five patients (72.0%) achieved complete ablation, with 57.1% (8/14), 78.2% (68/87), and 61.3% (19/31) in the 1,110 MBq, 3,700 MBq, and 5,550 MBq groups, respectively. There was no significant difference in the complete ablation rates between the three groups. In the multivariate analysis, the off-Tg level was a significant predictor of complete ablation. RAI therapy with low radioactivity (1,110 MBq) seemed sufficient for ablation in patients with papillary thyroid cancer with a pre-Tg level below 10 ng/mL. The off-Tg level is a promising and useful predictor of complete ablation after initial RAI therapy.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.291-294
• /
• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
• /
• 1997.10a
• /
• pp.59-65
• /
• 1997

The calibration of O.M.D is carried out experimentally and is analysed theoretically. O.M.D experimentally measures the change in optical density of artificially contaminated oil which contains Fe powder of 5, 10, 20, 30, 40, 50, 70, 100, 200 ppm. The change in optical density, D$_1$ means the logarithmic transmittance of I$_0$ over $I_1 D_2$ denotes the logarithmic transmittance I$_2$ over I$_1$ on electromagnetic force which arranges the ferrous particles along the line of magnetic force. The theoretical D$_1$ which increases linearly as increasing Fe concentrations, is analysed by light attenuation theory. The difference between theoretical D$_1$ and experimental D$_1$ is due to the attenuation of micro bubbles and the agglomeration of fine particles in the sample oil. The calibrated O.M.D is applied to the sample oil from the high-powered diesel engine. Also the results are compared with those out of the off-line techniques such as JOAP and ICP.