• Title/Summary/Keyword: $I_{ON}/I_{OFF}$

Search Result 1,105, Processing Time 0.026 seconds

The Analysis of I-V characteristics on n-channel offset gated poly-Si TFT`s (Offset 구조를 갖는 n-채널 다결정 실리콘 박막 트랜지스터의 I-V 분석)

  • 변문기;이제혁;김동진;조동희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1999.05a
    • /
    • pp.26-29
    • /
    • 1999
  • The I-V characteristics of the n-channel offset gated poly-Si TETs have been systematically investigated in order to analyse the effects of offset region. The on currents are reduced due to the series resistance by the offset length and there is no kink phenomenon in offset devices. The off currents of the offset gated TFTs are remarkably reduced to 10$^{-12}$ A independent of gate and drain voltage because the electric field is weakened by the increase of the depletion region width near the drain region. It is shown that the offset regions behave as a series resistance and reduce lateral and vertical electric field.

  • PDF

The characteristics of poly-Si TFTs with various LDD (LDD 길이 변화에 따른 poly-Si TFT의 특징)

  • Son, Hyuk-Joo;Kim, Jae-Hong;Lee, Jeoung-In;Yi, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.93-94
    • /
    • 2007
  • 다양한 LDD(lightly doped drain)에 따른 n-channel poly-Si TFT (thin film transistor)에 대하여 보고한다. 유리 기판 위에 ELA를 이용하여 만들어진 Polycrystalline silicon (poly-Si)은 TFT-LCD의 응용을 위한 재료로써 우수한 특성을 갖는다. 제작된 n-channel TFT는 절연층으로 $SiN_x$, $SiO_2$의 이중 구조를 갖는다. 다양한 LDD에 따른 n-channel poly-Si TFT의 문턱전압($V_{TH}$), ON/OFF 전류비 ($I_{ON}/I_{OFF}$), 포화전류($I_{DSAT}$)는 TFT의 보다 좋은 성능을 위해 연구된다. 짧은 LLD 길이를 가진 n-channel poly-Si TFT의 문턱전압은 작고, 포화전류의 값은 크다. 또한 긴 LLD 길이를 가진 n-channel poly-Si TFT는 작은 kink effect를 가진다.

  • PDF

Thermal treatments effects on the properties of zinc tin oxide transparent thin film transistors (Zinc tin oxide 투명박막트랜지스터의 특성에 미치는 열처리 효과)

  • Ma, Tae Young
    • Journal of IKEEE
    • /
    • v.23 no.2
    • /
    • pp.375-379
    • /
    • 2019
  • $ZnO-SnO_2(ZTO)$ was deposited by RF magnetron sputtering using a ceramic target whose Zn atomic ratio to Sn is 2:1 as a target, and the crystal structure variation with thermal treats was investigated. Transparent thin film transistors (TTFT) were fabricated using the ZTO films as active layers. About 100 nm-thick $Si_3N_4$ film grown on 100 nm-thick $SiO_2$ film was adopted as gate dielectrics. The mobility, threshold voltage, $I_{on}/I_{off}$, and interface trap density were obtained from the transfer characteristics of ZTO TTFTs. The effects of substrate temperature, and post-annealing on the property variation of ZTO TTFT were analyzed.

The Change of I-V Characteristics by Gate Voltage Stress on Few Atomic Layered MoS2 Field Effect Transistors (수 원자층 두께의 MoS2 채널을 가진 전계효과 트랜지스터의 게이트 전압 스트레스에 의한 I-V 특성 변화)

  • Lee, Hyung Gyoo;Lee, Gisung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.31 no.3
    • /
    • pp.135-140
    • /
    • 2018
  • Atomically thin $MoS_2$ single crystals have a two-dimensional structure and exhibit semiconductor properties, and have therefore recently been utilized in electronic devices and circuits. In this study, we have fabricated a field effect transistor (FET), using a CVD-grown, 3 nm-thin, $MoS_2$ single-crystal as a transistor channel after transfer onto a $SiO_2/Si$ substrate. The $MoS_2$ FETs displayed n-channel characteristics with an electron mobility of $0.05cm^2/V-sec$, and a current on/off ratio of $I_{ON}/I_{OFF}{\simeq}5{\times}10^4$. Application of bottom-gate voltage stresses, however, increased the interface charges on $MoS_2/SiO_2$, incurred the threshold voltage change, and degraded the device performance in further measurements. Exposure of the channel to UV radiation further degraded the device properties.

A technique to expand the I/O of the PLC Using remote I/O module

  • Suesut, Taweepol;Kongratana, Viriya;Tipsuvannaporn, Vittaya;Kulphanich, Suphan
    • 제어로봇시스템학회:학술대회논문집
    • /
    • 1999.10a
    • /
    • pp.61-64
    • /
    • 1999
  • In this paper, a technique to expand the Input and Output (I/O) of the programmable logic controller (PLC) using remote I/O module is presented. The controller and the remote I/O module should have the same protocol and are interfaced through RS 485. Each remote I/O module consists of 16 digital input and 16 digital output, and the maximum of 32 remote I/O module can be linked to one controller. The remote I/O is programmed for interrupt request to controller independently. Therefore, there is no affect to the scan time of the controller. Using this technique, the PLC can be efficiently applied to the several hundred meters different control points such as the ON-OFF control fur the agriculture farm, the building automation system, a multi group of machine control.

  • PDF

Performance Analysis of the MPEG Video Multiplexer Considering Traffic Periodicity in Frame Level (프레임 단위의 트래픽 주기성을 고려한 MPEG 비디오 멀티플렉서의 성능 분석)

  • Kang, Jin-Kyu;Lie, Chang-Hoon
    • Journal of Korean Institute of Industrial Engineers
    • /
    • v.22 no.3
    • /
    • pp.387-398
    • /
    • 1996
  • In this study the cell arrival processes from pre-buffer into multiplexer for MPEG(Motion Picture Experts Group) coding video sources are analyzed with consideration of the traffic periodicity in frame level. The analysis is performed by introducing the two arrival models, that is, periodic on/off source model and periodic uniform arrival model. Modulated $N^*D$/D/1 queueing system is utilized in periodic on/off source model, while ${\Sigma}{N_i}^*D_i$/D/1 queueing system is used in periodic uniform arrival model. The presented models are validated by comparing with computer simulations. Numerical results for periodic uniform arrival model are shown to be very accurate, but those of periodic on/off source model are shown to be inaccurate as the number of sources are increased.

  • PDF

A Trade-off Image Fusion Technique Using Fast Intensity-Hue-Saturation Transform (Fast IHS 변환을 이용한 trade-off 영상 융합기법)

  • Kim, Yong-Hyun;Kim, Youn-Soo
    • Aerospace Engineering and Technology
    • /
    • v.8 no.2
    • /
    • pp.26-32
    • /
    • 2009
  • In the satellite image fusion, the most important point is to preserve both the spatial detail of panchromatic(PAN) image and the spectral information of multispectral(MS) image. Among various image fusion techniques, fusion technique using Intensity-Hue-Saturation(IHS) transform is widely used and it has advantage that computation is very simple. In this study, a fusion technique using fast IHS transform and trade-off parameter $\alpha^i$ proposed. Proposed fusion technique permits customization of the trade-off between the spectral information and spatial detail quality of the fused image through the evaluation of two quality indices: a spectral index(the spectral ERGAS) and a spatial one(the spatial ERGAS). Based on the result of experiment using IKONOS image, we confirmed the proposed fusion technique was more effective in preserving spatial detail and spectral information than existing fusion techniques using fast IHS transform.

  • PDF

A Simulation of Temperature Control of Greenhouse with Hot-Water Heating System (온수난방시스템 온실의 온도제어 시뮬레이션)

  • 정태상;하종규;민영봉
    • Journal of Bio-Environment Control
    • /
    • v.8 no.3
    • /
    • pp.152-163
    • /
    • 1999
  • It is required to analyze the controlled response of air temperature in greenhouse according to control techniques for precise control. In this study, a mathematical model was established for air heating of greenhouse with hot-water heating system The parameters of the model were decided by regression analysis using reference data measured at the greenhouse being heated In the simulation for the digital control of air temperature in the greenhouse, the mathematical model to evaluate the control performances was used. Tested control methods were ON-OFF contpol, p control, rl control and PID control. The mathematical model represented by inside air temperature ( T$_{i}$), hot-water temperature (T$_{w}$) in heating pipe and outside air temperature (T$_{o}$) was expressed as a following discrete time equation ; T$_{i}$($textsc{k}$+1)= 0.851.T$_{i}$($textsc{k}$)+0.055.T$_{w}$($textsc{k}$)+0.094.T$_{o}$($textsc{k}$) Control simulations for various control methods showed the settling time, the overshoot and the steady state nor as follows; infinite time, 3.5$0^{\circ}C$, 3.5$0^{\circ}C$ for ON-OFF control : 30min 2.37$^{\circ}C$, 0.51$^{\circ}C$ for P control; 21min, 0.0$0^{\circ}C$, 0.23$^{\circ}C$ for PI control; 18min 0.0$0^{\circ}C$, 0.23$^{\circ}C$ for PID control, respectively. PI and PID controls appeared to be optimal control methods. There was no effect of differential gain on the heating process but much effect of integral gain on it.on it.

  • PDF

First Record of the Gobiid fish, Clariger chionomaculatus (Perciformes: Gobiidae) from off Geojedo Island, Korea (우리나라 거제도 연안에서 채집된 망둑어과 첫기록종, Clariger chionomaculatus)

  • Cho, Hyun-Geun;Kim, Byung-Jik
    • Korean Journal of Ichthyology
    • /
    • v.32 no.2
    • /
    • pp.110-114
    • /
    • 2020
  • A single specimen (40.5 mm in SL) of Clariger chionomaculatus was collected at 4 m depth on mud bottom from off Geojedo Island, Korea. This species is characterized by having an elongated body without scales, several barbels below eyes, I, 12~15 second dorsal fin rays, I, 12~14 anal fin rays; 19~20 pectoral fin rays with one free soft ray on upper part, and a unique color pattern with numerous white blotches on dorsal part of body. Because it has been known from Japan only to date, we describe in detail C. chionomaculatus as the first record from Korea. A new Korean name, "Huin-jeom-wae-mang-dug", is proposed for the species.

Switching conduction characteristics of PI LB Film in MIM junctions (Polyimide(PI)LB막의 MIM구조 소자내에서의 switching전도특성)

  • ;;Mitsumasa Iwamoto
    • Electrical & Electronic Materials
    • /
    • v.8 no.2
    • /
    • pp.176-183
    • /
    • 1995
  • The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

  • PDF