• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• The Journal of Korean Academy of Prosthodontics
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• v.43 no.4
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• pp.562-572
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• 2005

Statement of problem : Titanium is widely used as an implant material lot artificial teeth. Also, studies on surface treatment to form a fine passive film on the surface of commercial titanium or its alloys and improving bioactivity with bone have been carried out. However, there is insufficient data about the biocompatibility of the implant materials in the body. Purpose: The purpose of this study was to examine whether the precipitation of apatite on titanium metal is affected by surface modification. Materials and methods: Specimens chemically washed for 2 minute in a 1:1:1.5 (in vol%) mixture of 48% HF 60% $HNO_3$ and distilled water. Specimens were then chemically treated with a solution containing 97% $H_2SO_4$ and 30% $H_2O_2$ at $40^{\circ}C$S for 1 hour, and subsequently heat-treated at $400^{\circ}C$ for 1 hour. All specimens were immersed in the HBSS with pH 7.4 at $36.5^{\circ}C$ for 15 days, and the surface were examined with TF-XRD, SEM, EDX and XPS. Also, commercial purity Ti specimens with and without surface treatment were implanted in the abdominal connective tissue of mice for 4 weeks. Conventional aluminium and stainless steel 316L were also implanted for comparison. Results and conclusions : The results obtained were summarized as follows. 1. An amorphous titania gel layer was formed on the titanium surface after the titanium specimen was treated with a $H_2SO_4$ and $H_2O_2$ solution. The average roughness was $2.175{\mu}m$ after chemical surface treatment. 2. The amorphous titania was subsequently transformed into anatase by heat treatment at $400^{\circ}C$ for 1 hour. 3. The average thickness of the fibrous capsule surrounding the specimens implanted in the connective tissue was $46.98{\mu}m$ in chemically-treated Ti, and 52.20, 168.65 and $100.95{\mu}m$ respectively in commercial pure Ti, aluminum and stainless steel 316L without any treatment.

• Journal of Dental Rehabilitation and Applied Science
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• v.22 no.4
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• pp.349-365
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• 2006

State of problem : A number of investigation about increase of surface area via various surface treatments and modification of surface constituent have been carried out. Purpose : The surface characteristics and stability of implants treated with anodic oxidation, fluoride ion incorporation, and groups treated with both methods were evaluated. Material and method : Specimens were divided into six groups, group 1 was the control group with machined surface implants, groups 2 and 3 were anodic oxidized implants (group 2 was treated with 1M $H_2SO_4$ and 185V, group 3 was treated with 0.25M $H_2SO_4$ and $H_3PO_4$ and 300V). Groups 4, 5 and 6 were treated with fluoride. Group 4 was machined implants treated with 0.1% HF, and groups 5 and 6 were groups 2 and 3 treated with 10% NaF respectively. Using variable methods, implant surface characteristics were observed, and the implant stability was evaluated on rabbit tibia at 0, 4, 8 and 12 weeks. Result : 1. In comparison of the surface characteristics of anodic oxidized groups, group 2 displayed delicate and uniform oxidation layer with small pore size containing Ti, C, O and showed mainly rutile, but group 3 displayed large pore size and irregular oxidation layer with many crators. 2. In comparison of the surface characteristics of fluoride treated groups 4, 5, 6 and non-fluoride treated groups 1, 2, 3, the configurations were similar but the fluoride treated groups displayed rougher surfaces and composition analysis revealed fluoride in groups 4, 5, 6. 3. The fluoride incorporated anodic oxidized groups showed the highest resonance frequency values and removal torque values, and the values decreased in the order of anodic oxidized groups, fluoride treated group, control group. 4. According to implant stability tests, group 2 and 3 showed significantly higher values than the control group (P<.05). The fluoride treated groups showed relatively higher values than the non fluoride treated groups and there were significant difference between group 4 and group 1 (P<.05). Conclusion : From the results above, it can be considered that the anodic oxidation method is an effective method to increase initial bone stability and osseointegration and fluoride containing implant surfaces enhance new bone formation. Implants containing both of these methods should increase osseointegration, and reduce the healing period.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.7-11
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• 2010

The reduction of optical losses in mono-crystalline silicon solar cell by surface texturing is a critical step to improve the overall cell efficiency. In this study, we have changed the sub-micrometer structure on the micrometer pyramidal structure by 2-step texturing. The Ag particles were coated on the micrometer pyramid surface in $AgNO_3$ solution, and then the etching with hydrogen fluoride and hydrogen peroxide created even smaller nano-pyramids in these pyramids. As a result, we observed that the changes of size and thickness of nano structure on pyramidal surface were determined by $AgNO_3$ concentration and etching time. Using 2-step texturing, the surface of wafers is etched to resemble the rough surface of a lotus leaf. Lotus surface can reduce average reflectance from 10% to below 3%. This reflectance is less than conventional textured wafer including anti-reflection coating.

• Bulletin of the Korean Chemical Society
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• v.26 no.11
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• pp.1795-1802
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• 2005

Potential energy curves and internuclear (M-X) distance variations for dissociation reactions of $[MX_4]^{2-}$ into ($[MX_3]^-$ + $X^-$) have been calculated using ab initio Hartree-Fock (HF), second order M$\ddot{o}$ller-Plesset perturbation (MP2), and Density Functional Theory (DFT) methods with a triple zeta plus polarization (TZP) basis set. The equilibrium geometrical structures of $[MX_4]^{2-}$ are optimized to tetrahedral geometry for $[NiX_4]^{2-}$ and square planar geometry for ($[PdX_4]^{2-}$ and $[PtX_4]^{2-}$). The bond (M-X) distances of $[NiCl_4]^{2-}$, $[NiBr_4]^{2-}$, $[PdCl_4]^{2-}$, $[PdBr_4]^{2-}$, $[PtCl_4]^{2-}$, and $[PtBr_4]^{2-}$ at the DFT level are 2.258, 2.332, 2.351, 2.476, 2.367, and 2.493 $\AA$, respectively. The dissociation energies for the bond dissociation of ($[MX_3]^-$${\cdot}{\cdot}{\cdot}$$X^-$) at the DFT level are found to be 4.73 eV for $[NiCl_4]^{2-}$, 4.89 eV for $[NiBr_4]^{2-}$, 4.93 eV for $[PdCl_4]^{2-}$, 5.57 eV for $[PdBr_4]^{2-}$, 5.44 eV for $[PtCl_4]^{2-}$, and 5.87 eV for $[PtBr_4]^{2-}$. As the (M${\cdot}{\cdot}{\cdot}$X) distance of ($[MX_3]^-$${\cdot}{\cdot}{\cdot}$$X^-$) increases, the distance variation (Rt) of trans (M-X) bond at the trans-position is shorter than those (Rc) of two cis (M-X) bonds at the cisposition. Simultaneously the atomic charge variation of trans-X atom is more positive than those of equilibrium $[MX_4]^{2-}$ structures, while the variation of leaving X group is more positive.

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.749-755
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• 2004

Fluosilicic acid ($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicate salts prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicate salts to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. In this study, two-component fluosilicate salt based chemical admixtures (MZ) of $4\%,\;6\%$, and $8\%$ concentration were prepared by the reaction of $H_2SiF_6$ ($25\pm2\%$) and metal salts. The effect of concentration of MZ at a constant adding ratio on the hydration and watertightness of cement were investigated respectively. In a cement containing MZ, metal fluorides such as $CaF_2$ and soluble silica by hydrolysis were newly formed during hydration. The total porosity of the hardened cement was lower in the presence of U because of packing role of metal fluoride and pozzolanic reaction of soluble $SiO_2$. Consequently, the watertightness of the hardened paste containing MZ was more improved than non-added (plain) due to an odd hydration between cement and MZ.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.399-399
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• 2013

Metal silicides는 Si 기반의microelectronic devices의 interconnect와 contact 물질 등에 사용하기 위하여 그 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 이 중 Rare-earth(RE) silicides는 저온에서 silicides를 형성하고, n-type Si과 낮은 Schottky Barrier contact (~0.3 eV)을 이룬다. 또한 낮은 resistivity와 Si과의 작은 lattice mismatch, 그리고 epitaxial growth의 가능성, 높은 thermal stability 등의 장점을 갖고 있다. RE silicides 중 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 n-channel schottky barrier MOSFETs의 source/drain으로 주목받고 있다. 또한 Silicon 기반의 CMOSFETs의 성능 향상 한계로 인하여 germanium 기반의 소자에 대한 연구가 이루어져 왔다. Ge 기반 FETs 제작을 위해서는 낮은 source/drain series/contact resistances의 contact을 형성해야 한다. 본 연구에서는 저접촉 저항 contact material로서 ytterbium germanide의 가능성에 대해 고찰하고자 하였다. HRTEM과 EDS를 이용하여 ytterbium germanide의 미세구조 분석과 면저항 및 Schottky Barrier Heights 등의 전기적 특성 분석을 진행하였다. Low doped n-type Ge (100) wafer를 1%의 hydrofluoric (HF) acid solution에 세정하여 native oxide layer를 제거하고, 고진공에서 RF sputtering 법을 이용하여 ytterbium 30 nm를 먼저 증착하고, 그 위에 ytterbium의 oxidation을 방지하기 위한 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, rapid thermal anneal (RTA)을 이용하여 N2 분위기에서 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium germanides를 형성하였다. Ytterbium germanide의 미세구조 분석은 transmission electron microscopy (JEM-2100F)을 이용하였다. 면 저항 측정을 위해 sulfuric acid와 hydrogen peroxide solution (H2SO4:H2O2=6:1)에서 strip을 진행하여 TiN과 unreacted Yb을 제거하였고, 4-point probe를 통하여 측정하였다. Yb germanides의 면저항은 열처리 온도 증가에 따라 감소하다 증가하는 경향을 보이고, $400{\sim}500^{\circ}C$에서 가장 작은 면저항을 나타내었다. HRTEM 분석 결과, deposition 과정에서 Yb과 Si의 intermixing이 일어나 amorphous layer가 존재하였고, 열처리 온도가 증가하면서 diffusion이 더 활발히 일어나 amorphous layer의 두께가 증가하였다. $350^{\circ}C$ 열처리 샘플에서 germanide/Ge interface에서 epitaxial 구조의 crystalline Yb germanide가 형성되었고, EDS 측정 및 diffraction pattern을 통하여 안정상인 YbGe2-X phase임을 확인하였다. 이러한 epitaxial growth는 면저항의 감소를 가져왔으며, 열처리 온도가 증가하면서 epitaxial layer가 증가하다가 고온에서 polycrystalline 구조의 Yb germanide가 형성되어 면저항의 증가를 가져왔다. Schottky Barrier Heights 측정 결과 또한 면저항 경향과 동일하게 열처리 증가에 따라 감소하다가 고온에서 다시 증가하였다.

• Economic and Environmental Geology
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• v.36 no.4
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• pp.295-304
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• 2003

The Dukpyung and the Chubu areas were selected to investigate the migration and enrichment of arsenic and other toxic elements in soils and crop plants in areas covered with black shales. Rock and soil samples digested in 4-acid solution (HCI+HNO$_3$+HF+HC1O$_4$) were analyzed fer arsenic and other heavy metals by ICP-AES and ICP-MS, and plant samples by INAA. Mean concentration of As in Okchon black shale is higher than those of both world average values of shale and black shale. Especially high concentration of 23.2 mg/kg As is found in black shale from the Dukpyung area. Mean concentration of As is highly elevated in agricultural soils from the Duk-pyung (28.2 mg/kg) and the Chubu areas (32.6 mg/kg). Arsenic is highly elevated in rice stalks and leaves from the Dukpyung (1.14 mg/kg) and the Chubu areas (1.35 mg/kg). The biological absorption coefficient (BAC) of As in plant species decreases in the order of rice leaves>com leaves>red pepper>soybean leaves=sesame leaves>corn stalks>corn grains.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.247-251
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• 2004

반도체 소자의 제조에 있어 실리콘 표면에 성장한 자연산화막을 제거하기 위해 일반적으로 습식 세정 기술이 이용되어 왔다. 하지만 소자의 최소 선폭(design rule)이 nano급으로 고집적화 됨에 따라 contact hole 바닥의 자연산화막을 깨끗이 제거하는데 있어서 그 한계를 나타나고 있다. 이에 대한 효과적인 대안 공정으로 가스 건식 세정 기술이 연구되고 있다. 본 논문에서는 한 번에 50매 이상의 웨이퍼를 처리함으로써 생산성 측면에서 월등한 배치식 설비에서 원거리 플라즈마(remote plasma) 장치에서 2.450Hz의 마이크로웨이브(${\mu}$-wave)에 의해 형성시킨 수소라디칼과 $NF_3$ 가스를 이용하여 실리콘에 결함을 주지 않고 자연산화막을 선택적으로 제거하는 공정에 대해 고찰하였다. AFM을 이용한 표면분석, TEM을 이용한 물성분석, 그리고 ToF-SIMS 및 XPS를 이용한 화학 분석을 습식 및 건식 세정을 비교 평가한 결과, 건식 세정 공정이 실리콘 표면에 결함을 주지 않고 자연산화막을 제거 할 수 있음을 확인하였다. 산화막$(SiO_2)$, 질화막$(Si_3N_4)$, 그리고 다결정 실리콘(Poly-Si) 등의 각 막질별 식각 특성을 고찰하였으며, $NH_3$의 캐리어 가스인 $N_2$의 주입량을 조절함으로써 수소라디칼 형성 효율의 개선이 가능하였으며, 이로부터 게이트와 소스/드레인 사이를 절연하기 위해 이용되는 질화막의 식각 선택비를 2배 정도 개선할 수 있었다. nano급 소자에 실장하여 평가한 결과에서 불산(HF)에 의한 습식 세정 방식에 비하여 약 $20{\sim}50%$ 정도의 contact 저항 감소 효과가 있음이 확인되었다.두 소자 모두 $40mA/cm^2$ 에서 이상적인 화이트 발란스와 같은(0.33,0.33)의 색좌표를 보였다.epsilon}_0=1345$의 빼어난 압전 및 유전특성과 $330^{\circ}C$의 높은 $T_c$를 보였고 그 조성의 vibration velocity는 약4.5 m/s로 나타났다.한 관심이 높아지고 있다. 그러나 고 자장 영상에서의 rf field 에 의한 SAR 증가는 중요한 제한 요소로 부각되고 있다. 나선주사영상은 SAR 문제가 근원적으로 발생하지 않고, EPI에 비하여 하드웨어 요구 조건이 낮아 고 자장에서의 고속영상방법으로 적합하다. 본 논문에서는 고차 shimming 을 통하여 불균일도를 개선하고, single shot 과 interleaving 을 적용한 multi-shot 나선주사영상 기법으로 $100{\times}100$에서 $256{\times}256$의 고해상도 영상을 얻어 고 자장에서 초고속영상기법으로 다양한 적용 가능성을 보였다. 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확

• Journal of the korean academy of Pediatric Dentistry
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• v.23 no.3
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• pp.640-658
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• 1996

The purpose of this study was to examine the mechanism of improving acid resistance of Nd-YAG laser irradiated tooth enamel and determine the most effective energy density for improving acid resistance. The bovine tooth enamel were lased with a pulsed Nd-YAG laser. The energy densities of exposed laser beam were varied from 10 to $70\;J/cm^2$. To investigate the degree of improving acid resistance by irradiation, all the samples were submerged to demineralize in 0.5 N $HClO_4$ solution for 1 minute. After 1 minute, 0.05 % $LaCl_3$ was added to the solution for interrupting the demineralization reaction. The amounts of dissolved calcium and phosphate in the solution were measured by using an atomic absorption spectrophotometer and the UV/VIS spectrophotometer, respectively. To examine the mechanism of improving acid resistance, X-ray diffraction analysis, infrared spectroscopy, and scanning electron microscopy were taken. The X-ray diffraction pattern of the samples were obtained in the $10^{\circ}{\sim}80^{\circ}2{\theta}$ range with $Cu-K{\alpha}$ radiation using M18HF(Mac Science Co.) with X-ray diffractometer operating at 40 KV and 300 mA. The infra-red spectra of the ground samples in 300 mg KBr pellets 10 mm diameter were obtained in the $4000cm^{-1}\;to\;400cm^{-1}$ range using JASCO 300E spectrophotometer. The scanning electron microscopy was carried out using JSM6400(JEOL Co.) with $500{\sim}2000$ times magnification. The results were as follow 1. The concentration of calcium dissolved from laser irradiated enamel with $50J/cm^2$ was significantly lesser than that of unlased control group (p<0.05) 2. From the result of the X-ray diffraction analysis, $\beta$-TCP, which increases acid solubility, was identified in lased enamel but the diffraction peaks of (002) and (004) became sharp with increasing energy density of laser irradiation. This means that the crystals in lased samples were grown through the c-axis and subsequently, the acid solubility of enamel decreased. 3. The a-axis parameter was slightly increased by laser irradiation, whereas the c-axis parameter was almost constant except for a little decrease at $50J/cm^2$. 4. In the infra-red spectra of lased enamels, phosphate bands ($600{\sim}500cm^{-1}$), B-carbonate bands (870, $1415{\sim}1455cm^{-1}$), and A-carbonate band ($1545cm^{-1}$) were observed. The amounts of phosphate bands and the B-carbonate bands were reduced, on the other hand, the amount of the A-carbonate band was increased by increase the energy density. 5. The SEM experiments reveal that the surface melting and recrystallization were appeared at $30J/cm^2$ and the cracks were observed at $70J/cm^2$. From above results, It may be suggested that the most effective energy density for improving acid resistance of tooth enamel with the irradiation of Nd-YAG laser was $50J/cm^2$. The mechanism of improving acid resistance were reduction of permeability due to surface melting and recrystallization of lased enamel and reduction of acid solubility of enamel due to decrease of carbonate content and growth of crystal.