• Journal of the Korean Ceramic Society
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• v.41 no.7
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• pp.528-533
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• 2004

Macroporous SiC with pore size 84∼658 nm and mesoporous SiC with pore size 15∼65 nm were respectively prepared by infiltrating low viscosity preceramic polymer solutions into the various sacrificial templates obtained by natural sedimentation or centrifuge of 20∼700 nm silica sol, which were subsequently etched off with HF after pyrolysis at 1000∼140$0^{\circ}C$ in an argon atmosphere. Three-dimensionally long range ordered macroporous SiC ceramics derived from polymethylsilane (PMS) showed surface area 584.64$m^2$g$^{-1}$ when prepared with 112nm silica sol and at 140$0^{\circ}C$, whereas mesoporous SiC from polycarbosilane (PCS) exhibited the highest surface area 619.4 $m^2$g$^{-1}$ with random pore array when prepared with 20-30 nm silica sol and at 100$0^{\circ}C$. Finally, tile pore characteristics of porous SiC on the types of silica sol, polymers and pyrolytic conditions were interpreted with the analytical results of SEM, TEM, and BET instruments.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Membrane Journal
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• v.21 no.1
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• pp.22-29
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• 2011

During the maintenance, repair and replacement process of circuit breaker, $SF_6$ reacted with input air in arc discharge, which led to the production of by-product gases (eg, $N_2$, $O_2$, $CF_4$, $SO_2$, $H_2O$, HF, $SOF_2$, $CuF_2$, $WO_3$). Among these various by-product gases, $N_2$, $O_2$, $CF_4$ is major component. Therefore, the effective separation process is necessary to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. In this study, the membrane separation process was applied to recycle the $SF_6$ gas from the mixture gas containing $N_2$, $O_2$, $CF_4$. The concentration of $SF_6$ gas in gas produced from the electric power industry is over than 90 vol%. Therefore, we made the simulated gas containing $N_2$, $O_2$, $CF_4$, $SF_6$ which the concentration of $SF_6$ gas is minimum 90 vol%. From the results of membrane separation process of $SF_6$ gas from $N_2$, $O_2$, $CF_4$ $SF_6$ mixture gases, PSF membrane shown the highest recovery efficiency 92.7%, in $25^{\circ}C$ and 150 cc/min of retentate flow rate. On the other hand, PC membrane shown the highest recovery efficiency 74.8%, in $45^{\circ}C$ and 150 cc/min of retentate flow rate. Also, the highest rejection rate of $N_2$, $O_2$, $CF_4$ is 80, 74 and 58.9% seperately in the same operation condition of highest recovery efficiency. From the results, we supposed the membrane separation process as the effective $SF_6$ separation and recycle process from the mixture gas containing $N_2$, $O_2$, $CF_4$, $SF_6$.

• Korean Journal of Mineralogy and Petrology
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• v.33 no.2
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• pp.115-127
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• 2020

The Unsang gold deposit has been one of the three largest deposits (Daeyudong and Kwangyang) in Korea. The deposit consists of Au-bearing quartz veins filling fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it might be an orogenic-type. Based on its mineral assemblages and quartz textures, quartz veins are classified into 1)galena-quartz, 2)pyrrhotite-quartz, 3)pyrite-quartz, 4)pegmatic quartz, 5)muscovite-quartz, and 6)simple quartz vein types. The pyrite-quartz vein type we studied shows the following alteration features: sericitization, chloritization, and silicification. The quartz vein contains minerals including white quartz, white mica, chlorite, pyrite, rutile, calcite, monazite, zircon, and apatite. Rutile with euhedral or medium aggregate occur at mafic part from laminated quartz vein. Two types of rutile are distinguishable in BSE image, light rutile is texturally later than dark rutile. Chemical composition of rutile has 89.69~98.71 wt.% (TiO₂), 0.25~7.04 wt.% (WO₃), 0.30~2.56 wt.% (FeO), 0.00~1.71 wt.% (Nb₂O₅), 0.17~0.35 wt.% (HfO₂), 0.00~0.30 wt.% (V₂O₃), 0.00~0.35 wt.% (Cr₂O₃) and 0.04~0.25 wt.% (Al₂O₃), and light rutile are higher WO₃, Nb₂O₅ and FeO compared to the dark rutile. It indicates that dark rutile and light rutile were formed at different stage. The substitution mechanisms of dark rutile and light rutile are suggested as followed : dark rutile [(V³⁺, Cr³⁺) + (Nb⁵⁺, Sb⁵⁺) ↔ 2Ti⁴⁺, 4Cr³⁺ (or 2W⁶⁺) ↔ 3Ti⁴⁺ (W⁶⁺ ↔ 2Cr³⁺), V⁴⁺ ↔ Ti⁴⁺], light rutile [2Fe³⁺ + W⁶⁺ ↔ 3Ti⁴⁺, 3Fe²⁺ + W⁶⁺ ↔ Ti⁴⁺ + (V³⁺, Al³⁺, Cr³⁺) +Nb⁵⁺], respectively. While the dark rutile was formed by cations including V³⁺, V⁴⁺, Cr³⁺, Nb⁵⁺, Sb⁵⁺ and W⁶⁺ by regional metamorphism of hostrock, the postdating light rutile was formed by redistribution of cations from predating dark rutile and addition of Fe²⁺ and W⁶⁺ from Au-bearing hydrothermal fluid during ductile shear.

• Bulletin of the Korean Chemical Society
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• v.27 no.9
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• pp.1405-1417
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• 2006

The geometrical structures, potential energy surfaces, and energetics for the ligand exchange reactions of tetracoordinated platinum $(PtY_2L_2\;:\;Y,\;L=Cl^-,\;OH^-,\;OH_2,\;NH_3)$ complexes in the ligand-solvent interaction systems were investigated using the ab initio Hartree-Fock (HF) and Density Functional Theory (DFT) methods. The potential energy surfaces for the ligand exchange reactions used for the conversions of $(PtCl_4\;+\;H_2O)^{^\ast_\ast}\;to\;[PtCl_3(H_2O)\;+\;Cl^-]$ and $[Pt(NH_3)_2Cl_2\;+\;H_2O]$$[Pt(NH_3)_2Cl_2\;+\;H_2O]$ to $[Pt(NH_3)_2Cl(H_2O)\;+\;Cl^-] $ were investigated in detail. For these two exchange reactions, the transition states $([PtY_2L_2{\cdot}{\cdot}{\cdot}L^\prime])^{^\ast_\ast} $ correspond to complexes such as $(PtCl_4{\cdot}{\cdot}{\cdot}H_2O)^{^\ast_\ast}$ and $[Pt(NH_3)_2Cl_2{\cdot}{\cdot}{\cdot}H_2O]^{^\ast_\ast}$, respectively. In the transition state, $([PtCl_4{\cdot}{\cdot}{\cdot}H_2O]^{^\ast_\ast}$ and $[Pt(NH_3)_2Cl_2{\cdot}{\cdot}{\cdot}H_2O]]^{^\ast_\ast})$ have a kind of 6-membered $(Pt-Cl{\cdot}{\cdot}{\cdot}HOH{\cdot}{\cdot}{\cdot}Cl)$ and $(Pt-OH{\cdot}{\cdot}{\cdot}Cl{\cdot}{\cdot}{\cdot}HN)$ interactions, respectively, wherein a central Pt(II) metal directly combines with a leaving $Cl^-$ and an entering $H_2O$. Simultaneously, the entering $H_2O$ interacts with a leaving $Cl^-$. No vertical one metal-ligand interactions $([PtY_2L_2{\cdot}{\cdot}{\cdot}L^\prime]) $ are found at the axial positions of the square planar $(PtY_2L_2)$ complexes, which were formed via a vertically associative mechanism leading to $D_{3h}$ or $C_{2v}$-transition state symmetry. The geometrical structure variations, molecular orbital variations (HOMO and LUMO), and relative stabilities for the ligand exchange processes are also examined quantitatively. Schematic diagrams for the dissociation reactions of {PtCl4(H2O)n(n=2,4)} into {$PtCl_3(H_2O)_{(n-2)}\;+\;Cl^-(H_2O)_2$} and the binding energies {$PtCl_4(H_2O)_n$(n = 1-5)} of $PtCl_4$ with water molecules are drawn.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Mass Spectrometry Letters
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• v.3 no.2
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• pp.58-61
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• 2012

A method based on flow injection-isotope dilution-cold vapor-inductively coupled plasma mass spectrometry (FI-IDCV-ICP/MS) has been applied to determine trace level of mercury in fly ash. $^{200}Hg$ isotopic spike was added to 0.25 g of BCR176R fly ash and then decomposed by microwave digestion procedure with acid mixture A (8 mL $HNO_3$ + 2 mL HCl + 2 mL HF) and acid mixture B (8 mL $HNO_3$ + 2 mL $HClO_4$ + 2 mL HF) for applying IDMS. Mercury cold vapor was generated by using reductant solution of 0.2% (w/w) $NaBH_4$ and 0.05% (w/w) NaOH. The measurements of n($^{200}Hg$)/n($^{202}Hg$) isotope ratio was made using a quadrupole ICP/MS system. The accuracy in this method was verified by the analysis of certified reference material (CRM) of fly ash (BCR 176R). The indicative value of Hg in BCR 176R fly ash was $1.60{\pm}0.23$ mg/kg (k = 2). The determined values of Hg in BCR 176R fly ash by the method of FI-CV-ID-ICP/MS described in this paper were $1.60{\pm}0.24$ mg/kg (k = 3.18) and the analysis results were in well agreement with the indicative value within the range of uncertainty.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Bulletin of the Korean Chemical Society
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• v.31 no.11
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• pp.3247-3251
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• 2010

Molecular structures of the various conformers for the four stereoisomers of tetra-t-butyl-tetra-O-methylsulfinylcalix[4]arene (1) were optimized using DFT BLYP and mPW1PW91/6-31G(d,p) (hybrid HF-DF) calculation methods. We have analyzed the total electronic and Gibbs free energies and normal vibrational frequencies of 16 different structures from four major conformations (cone (CONE), partial cone (PC), 1,2-alternate (1,2-A), 1,3-alternate (1,3-A)) of the four stereoisomers [1(rccc), 1(rcct), 1(rctt), 1(rtct)]. The mPW1PW91/6-31G(d,p) calculations suggested that the $1(rccc)_{CONE}$, $1(rcct)_{PC}$, $1(rctt)_{PC}$, and $1(rtct)_{1,3-A}$ were the most stable conformations of the respective stereoisomers. These outcomes are in accordance with the experimental structures obtained from X-ray crystallography. The electrostatic repulsion between the sulfinyl and methoxy groups is a primary factor for the relative stabilities of the four different conformations. The IR spectra of the most stable conformers [$1(rccc)_{CONE}$, $1(rcct)_{PC}$, $1(rctt)_{PC}$, $1(rtct)_{1,3-A}$] of each stereoisomer were compared to each other.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.138-142
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• 2010

Polystyrene thin films containing Bragg structures have been successfully obtained by the removal of DBR porous silicon films from the DBR structured porous silicon/polystyrene composite film in HF/$H_2O$ mixture solution and by replicating the nano-structures of porous silicon containing Bragg structure. Polystyrene thin films containing Bragg structures displayed unique optical reflection resonances in optical reflection spectrum. This optical reflection band was resulted from the interference of reflection wavelength at Bragg structure of polystyrene thin films. The wavelength of reflection resonances could be modified by the change of Bragg structure of the master. Polystyrene thin films containing Bragg structures were flexible and maintained their optical characteristics upon bending. The Polystyrene thin films replicate the photonic features and the nanostructure of the master.