• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.

• Mass Spectrometry Letters
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• v.5 no.4
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• pp.120-123
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• 2014

The interference of water vapor on the chemical ionization (CI) of hydroxyl radicals (OH) by sulfur hexafluoride ion ($SF_6{^-}$) was investigated using a flow tube system coupled to a high-pressure CI mass spectrometer. Water vapor, which is required to study heterogeneous reactions of OH under real tropospheric conditions, transforms the reagent ion $SF_6{^-}$ into $SF_4O^-$ and $F^-(HF)_n$, resulting in a substantial loss in CI sensitivity. Therefore, under humid conditions, peaks corresponding to OH are drastically diminished, while those corresponding to OH-water complex ions ($[OH(H_2O)_n]^-$) are enhanced. $[OH(H_2O)_3]^-$ was observed as the major OH species. The obsercation of $[OH(H_2O)_n]^-$ by isolating humid conditions to the CI region and preliminary ab initio calculations suggested that $[OH(H_2O)_n]^-$ ions were produced from reactions between OH ions ($OH^-$) and water molecules. An additional helium buffer flow introduced into the CI region reduced loss of the reagent ion and resulted in a partial recovery of OH peak intensities under humid conditions.

• Journal of the Korean Chemical Society
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• v.53 no.3
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• pp.244-256
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• 2009

The psoralen-pyrimidine base complexes resulting from interstrand cross-linking through $C_4$-cycloaddition is studied by ab initio and DFT methods. The results indicate that in the case of the molecular complex formation between psoralens and pyrimidine base, the most probable photocycloadditions are 8-MOP< >Thy, Ps< >Cyt and Ps< >Thy. The geometries of photoadducts were optimized at the HF levels and ${\Delta}{G^{\circ}}$ were calculated. The photocycloadduct was inferred to be a C4-cycloaddition product with the stereochemistry of trans-syn 8-MOP< >Thy, trans-anti Ps(3, 4)< >Cyt, trans-anti Ps(12, 13)< >Cyt, trans-syn Ps(3, 4)< >Thy, trans-syn Ps(12, 13)< >Thy, trans-anti Ps(12, 13)< >Ps(12, 13), cis syn, cis anti Thy< >(3, 4)Ps(12, 13)< >Thy.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.338.2-338.2
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• 2016

Al doped ZnO (AZO) thin films were deposited on Si substrates with rod-shaped-surface by pulsed laser deposition method (PLD). Si-rods were prepared through chemical etching. To analyze the influence on the formation of the rod structure, samples with various chemical etching conditions such as AgNO3/HF ratio, etching time, and solution temperature were prepared. The morphology of Si-rod structures were examined by FE-SEM. Fig. 1 shows a typical structure of n-AZO/p-Si-rod juncions. The fabricated n-AZO/p-Si-rod devices exhibited p-n diode current-voltage characteristics. We compared the I-V characteristics of n-AZO/p-Si-rod devices with the samples without Si-rod structure.

• Bulletin of the Korean Chemical Society
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• v.26 no.12
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• pp.1953-1961
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• 2005

We have performed high-level quantum mechanical calculation for multiple proton transfer in HOCl + HCl and $H_2O$ + $ClONO_2$ on water clusters, which can be used as a model of the reactions on ice surface in stratospheric clouds. Multiple proton transfer on ice surface plays crucial role in these reactions. The structures of the clusters with 0-3 water molecules and the transition state structures for the multiple proton transfer have been calculated. The energies and barrier heights of the proton transfer were calculated at various levels of theory including multi-coefficient correlated quantum mechanical methods (MCCM) that have recently been developed. The transition state structures and the predicted reaction mechanism depend very much on the level of theory. In particular, the HF level can not correctly predict the TS structure and barrier heights, so the electron correlation should be considered appropriately.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2008.11a
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• pp.69-70
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• 2008

태양전지에서 효율성은 높이고 가격은 낮추기 위한 연구가 활발히 진행이 되고 있다. 본 연구에서는 효율성 중에서도 single layer에서의 반사율에 초점을 맞추었다. 본 연구에서는 single layer 박막에서의 반사율에 대한 시뮬레이션을 수행했다. 적절한 refractive index를 갖는 박막을 사용했을 때, 반사율 감소를 simulation과 실험을 통해서 알 수가 있었으며, MgF2 박막물질을 사용했을 경우, 물질의 refractive index가 낮을수록 반사율이 낮아짐을 알 수 있었다. 시뮬레이션 결과와 실제 실험 결과를 비교했을 때, 실제 실험 결과의 반사율이 약 3%가량 큰 것으로 나타났다. 이는 반사방지막의 증착 불균일성에 기인하는 문제로 생각된다. 또한, refractive index의 차이에 의해 substrate에 따른 최적화 반사율을 얻는 조건이 달라짐을 실험을 통해 확인할 수 있었다. Glass의 경우는 MgF2가 silicon과 GaAs의 경우에는 ZrO2 나 HfO2가 낮은 반사율을 보였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.284-284
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• 2013

중 에너지 이온 산란 분석법(Medium Energy Ion Scattering Spectrometer, MEIS)은 50~500 keV로 이온을 가속 후 시료에 입사시켜 시료의 원자와 핵간 충돌로 산란되는 일차이온의 에너지를 측정하여 시료를 분석하는 기법으로, 원자층의 깊이 분해능으로 초박막의 표면 계면의 조성과 구조를 분석 할수 있는 유용한 미세 분석기술이다. 본 실험에서 에너지 70~100 keV의 He+ 이온을 사용하여 Pulse Width 1 ns의 Pulsed ion beam을 만들어 Start 신호로 사용하고 Delay-line-detector에 검출된 신호를 End 신호를 이용한 TOF-MEIS System을 개발하였다. 활용 가능한 분석시편으로 Ultra thin film 시편으로 1, 1.5, 2, 2.5, 3, 4 nm의 HfO2, 1.8, 4nm의 SiO2 시편을 분석 하였으며 Ultra Shallow Junction 시편으로 As Doped Si, Cs Doped Si 시편 및 Composition, Core/shell 구조의 Q-dot 시편으로 CdSe, CdSe/ZnS등 다양한 분석 실험을 진행 하였다. Composition, Core/shell 구조의 Q-dot 시편은 Diamond Like Carbon(DLC)의 Substrate에 Mono-layer로 형성하여 분석하였다.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.567-574
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• 2016

We have analyzed chemical properties of polysiloxane and polysilazane films, respectively, as sealing materials for electrostatic chuck (ESC) and have investigated the possibility of polysilazane as an alternative sealant to polysiloxane. It has been revealed that Si-O with organic bonding ($Si-CH_3$) existed in polysiloxane films compared to only pure Si-O bonding in polysilazane films. The sealing property of polysilazane has been found outstanding even in a short time of application. In the polysiloxane films containing $H_2O$, pin holes have been found possibly due to $CO_2$ gas evolution, and low adhesion with Si substrate has been observed after heat stress test in connection with the existence of organic bonding. After acid resistance test in 0.5 vol.% HF, 68 wt.% $HNO_3$, and 37 wt.% HCl solution, polyilazane films have shown a longer survival times. Compared to the conventional polysiloxane sealant, polysilazane is expected as a new sealing material because of good thermal and chemical stability.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.74-80
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• 1994

Silicon direct bonding technology is very attractive for both silicon-on-insulator devices and sensor fabrication because of its thermal stress free structure and stability. The process of SDB includes hydration of silicon wafer and heat treatment in a wet oxidation furnace. After hydration process, hydroxyl groups of silicon wafer were analyzed by using Fourier transformation-infrared spectroscopy. In case of hydrophilic treatment using a ($H_{2}O_{2}\;:\;H_{2}SO_{4}$) solution, hydroxyl groups are observed in a broad band around the 3474 $cm^{-1}$ region. However, hydroxyl groups do not appear in case of diluted HF solution. The bonded wafer was etched by using tetramethylammonium hydroxide etchant. The surface of the self etch-stopped silicon dioxide is completely flat, so that it can be used as sensor applications such as pressure, flow and acceleration, etc..