• Resources Recycling
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• v.2 no.4
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• pp.1-9
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• 1993

A study on the recovery of nitric and hydrofluoric acids is carried out with pulsed column extractor in order to the industrial application of this process. Firstly, from the continuous experiments about the recovery of acids using domestic stainelss steel pickling solution, it is found out that the free nitric and hydrofluoric acids are only extracted by 70% TBP and the heaby metals such as Fe, Cr and Ni are not extracted. The effectiveness of extraction and stripping generally improves as the pulse velocity(product of amplitude and frequency) is increased, optimum performance typically occuring slightly below an amplitude-frequency product which results in flooding the column because of excessive emulsification. When the pickling solution is treated by 70% TBP at a phase ratio of A/O=1/2 in the extraction and by distilled water at a phase ratio of O/A=1 in the stripping, the concentration of refined acides are 102g/$\ulcorner$ $HNO_3$and 8.8g/$\ulcorner$ HF, respectively and the recovery of $HNO_3$and HF are 90.7% and 75.2%, respectively.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.82-82
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• 2011

본 연구에서는 이온빔 스퍼터링 방법으로 증착한 Cr2O3, Ta2O5, HfO2 산화물박막의 구조적 특성변화를 관찰하였다. 금속박막에서 표면이 산화되는 문제를 해결하기위하여 산화물 박막을 증착시켰다. 이온빔 스퍼터링으로 박막 증착 시 산화물 타겟을 사용할 때 발생되는 전하의 영향을 상쇄하기 위하여 neutralizer를 사용하였다. 박막 증착 후 XRR (X-ray Reflectometer)을 이용하여 박막의 두께, 거칠기 및 밀도를 확인하였으며, AFM (Atomic Force MicroScope)을 통하여 증착한 박막표면 거칠기 측정을 하여 XRR로 얻은 데이터와 비교하여 살펴보았다. 또한 XPS (X-ray photoelectron spectroscopy)측정을 통해 제조된 박막의 화학적 결합상태를 확인하였다. 여러 가지 조건변화와 기판의 차이에 따라 제작된 산화물 박막 중 실리콘 기판을 사용하여 증착시킨 박막은 XRR측정시 반사율 곡선에서 자연 산화막에 의한 영향이 나타났다. 반면 glass나 sapphire에 증착시킨 산화물 박막은 실리콘기판에서 나타난 자연 산화막의 영향을 받지 않음을 확인하였다. 기판과 산화물 박막사이에 계면층에 나타나는 영향을 최소화시킴으로써 양질의 박막을 제작할 수 있을 것으로 기대된다.

• Proceedings of The Korean Society of Agricultural and Forest Meteorology Conference
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• 2001.06a
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• pp.167-170
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• 2001

대기오염 물질 중에는 아황산가스(SO$_2$), 산화질소(NOx), 불화수소(HF), 탄화수소(HC), 오존 (O$_3$)등 여러 가지 종류가 있으나 이러한 대부분의 대기오염 물질들은 식물체내에 흡수되어 세포내에서 활성산소(activated oxygen)를 발생시키게 되는데 이때 발생되는 활성산소에는 superoxide radicals(O$_2$), 과산화수소($H_2O$$_2$), 수산기(OH$^{-}$) 및 singlet oxygen(O$_2$) 등으로 생리적, 생화학적 과정 및 세포내의 구조조직에 부정적인 영향을 미치게되어 식물의 생장을 감소시킨다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.199-199
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• 2010

XRR(X-ray reflectometry)은 나노 스케일 박막의 두께를 측정하는 유망한 도구로 인식되고 있고, XRR측정 결과의 신뢰성을 향상시키기 위하여 많은 연구가 이루어지고 있다. 본 연구에서는 나노 스케일 박막 두께의 정확한 측정을 위해 Si기판 위에 성장시킨 $HfO_2$, $Al_2O_3$, $Ta_2O_5$의 산화물 박막에 대하여 여러 가지 전처리 조건을 변화시켜 조건에 따른 반사율 곡선의 변화와 분석 결과를 살펴보았다. 샘플의 전처리에는 acetone, sulfuric acid, methanol, 초음파세척기를 이용하였고, 전처리가 끝난 후 샘플에 남아있는 수분기를 제거하기 위하여 약 $150^{\circ}C$의 온도로 가열 후 측정비교 분석하였다. 전처리 시 solution과 시간 등의 전처리 조건이 변화함에 따라 X-선 반사율 곡선의 변화가 있음을 알 수 있었고, 이에 따라 XRR 측정 분석 시 두께에 영향을 받았으며, TEM과 XPS를 이용하여 전처리 영향에 대하여 비교 분석 하였다. 이번 연구를 통하여 전처리 방법에 따라 XRR 측정에 정확성을 향상 시킬 수 있는 있는 것으로 보여진다.

• Economic and Environmental Geology
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• v.39 no.3 s.178
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• pp.329-342
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• 2006

The purpose of this study is to determine the geochemical characteristics for the stream sediments in the Konyang area. So we can estimate the environment contamination and understand geochemical disaster. We collect the stream sediments samples by wet sieving along the primary channels and slowly dry the collected samples in the laboratory and grind to pass a 200mesh using an alumina mortar and pestle for chemical analysis. Mineralogy, major, trace and rare earth elements are determined by XRD, XRE, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological groups of stream sediments, the studied area was grouped into quartz porphyry area, sedimentary rock area, anorthosite area and gneiss area. Contents of major elements for the stream sediments in the Konyang area were $SiO_2\;41.86{\sim}76.74\;wt.%,\;Al_{2}O_{3}\;9.92{\sim}30.00\;wt.%,\;Fe_{2}O_{3}\;2.74{\sim}12.68\;wt.%,\;CaO\;0.22{\sim}3.31\;wt.%,\;MgO\;0.34{\sim}3.97\;wt.%,\;K_{2}O\;0.75{\sim}0.93\;wt.%,\;Na_{2}O\;0.25{\sim}1.92\;wt.%,\;TiO_{2}\;0.40{\sim}3.00\;wt.%,\;MnO\;0.03{\sim}0.21\;wt.%,\;P_{2}O_{5}\;0.05{\sim}0.38\;wt.%$. The contents of trace and rare earth elements for the stream sediments were $Cu\;7{\sim}102\;ppm,\;Pb\;15{\sim}47\;ppm,\;Sr\;48{\sim}513\;ppm,\;V\;29{\sim}129\;ppm,\;Zr\;31{\sim}217\;ppm,\;Li\;14{\sim}94\;ppm,\;Co\;5.6{\sim}32.1\;ppm,\;Cr\;23{\sim}259\;ppm,\;Cs\;1.7{\sim}8.7\;ppm,\;Hf\;2.1{\sim}109.0\;ppm,\;Rb\;34{\sim}247\;ppm,\;Sc\;4.5{\sim}21.9\;ppm,\;Zn\;24{\sim}609\;ppm,\;Sb\;0.8{\sim}2.6\;ppm,\;Th\;3{\sim}213\;ppm,\;Ce\;22{\sim}1000\;ppm,\;Eu\;0.7{\sim}5.3\;ppm,\;Yb\;0.6{\sim}6.4\;ppm$. Generally, the contents of $Al_{2}O_{3}\;and\;SiO_2$ had a good relationships with each other in rocks but it had a bad relationships in stream sediments for this study area. The contents of $Fe_{2}O_3$, CaO, MnO and $P_{2}O_{5}$ had a good relationships with major and minor elements in stream sediments of this study area. The contents of Co and V in the stream sediments had a good relationships with other toxic elements.

• Journal of IKEEE
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• v.26 no.2
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• pp.329-332
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• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Economic and Environmental Geology
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• v.38 no.4 s.173
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• pp.481-492
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• 2005

The purpose of this study is to determine geochemical characteristics for stream sediments in the Gwangju area. We collect the stream sediments samples by wet sieving along the primary channels and dry these samples slowly in the laboratory and grind to under 200mesh using an alumina mortar fur chemical analysis. Major elements, trace and rare earth elements are determined by XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on geological groups of stream sediments, we separate geologic groups which are derived from Precambrian granite gneiss area, Jurassic granite area and Cretaceous Hwasun andesite area. Contents range of major elements for stream sediments in the Gwangju area are $SiO_2\;51.89\~70.63\;wt.\%,\;Al_2O-3\;12.91\~21.95\;wt.\%,\;Fe_2O_3\;3.22\~9.89\;wt.\%,\;K_2O\;1.85\~4.49\;wt.\%,\;MgO\;0.68\~2.90\;wt.\%,\;Na_2O\;0.48\~2.34\;wt.\%,\;CaO\;0.42\~6.72\;wt.\%,\;TiO_2\;0.53\~l.32\;wt.\%,\;P_2O_5\;0.06\~0.51\;wt.\%\;and\;MnO\;0.05\~0.69\;wt.\%.$ According to the AMF diagram for stream sediments and rocks, the stream sediments are plotted on boundary of tholeiitic series and calk alkaline series, which shows that contents of $Fe_2O_3$ are higher in stream sediments than rocks. According to variation diagram of $SiO_2$ versus $(K_2O+Na_2O),$ stream sediments are plotted on subalkaline series. Contents range of trace and rare earth elements for stream sediments in the Gwangiu area are Ba$590\~2170$ppm, Be1\~2.4$ppm, Cu$13\~79$ppm, Nb$20\~34$ppm, Ni$10\~50$ppm, Pb$17\~30$ppm, Sr$70\~1025$ ppm, V$42\~135$ppm, Zr$45\~171$ppm, Li$19\~77$ppm, Co$4.3\~19.3$ppm, Cr$28\~131$ppm, Cs$3.1\~17.6$ppm, Hf$5\~27.6$ppm, Rb$388\~202$ppm, Sb$0.2\~l.2$ ppm, Sc$6.4\~17$ppm, Zn$47\~389$ppm, Pa$8.8\~68.8$ppm, Ce$62\~272$ppm, Eu$1\~2.7$ppm and Yb$0.9\~6$ppm.

• Journal of Sensor Science and Technology
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• v.17 no.1
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• pp.9-14
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• 2008

In this paper, the gas responses of tungsten oxide films prepared by anodic reaction was discussed. Sensing electrodes and heating electrodes were patterned by photolithography method on quartz substrate. Porous tungsten oxide was fabricated in electrolyte solutions of 5 % HF (HF :$C_2H_6OH:H_2O$=3 : 2 : 20) by anodic reaction. The anodic reaction with metal (platinum wire) as a cathode and the sensing device as an anode was conducted under the various reaction times (1-10 min) at 10 mA/$cm^2$ The surface structure and morphology of the fabricated sensor have been analysed by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). All the peaks of XRD results were well indexed to the pure phase pattern. The average diameter of the porous tungsten oxide surface were ranged about 100 nm. The fabricaed sensor showed good sensitivity to 200 ppm toluene at operating temperature of $250^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.323-323
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• 2010

Saw damage of crystalline silicon wafer is unavoidable factor. Usually, alkali treatment for removing the damage has been carried out as the saw damage removal (SDR) process for priming the alkali texture. It usually takes lots of time and energy to remove the sawed damages for solar grade crystalline silicon wafers We implemented two different mixed acidic solution treatments to obtain the improved surface structure of silicon wafer without much sacrifice of the silicon wafer thickness. At the first step, the silicon wafer was dipped into the mixed acidic solution of $HF:HNO_3$=1:2 ration for polished surface and at the second step, it was dipped into the diluted mixed acidic solution of $HF:HNO_3:H_2O$=7:3:10 ratio for porous structure. This double treatment to the silicon wafer brought lower reflectance (25% to 6%) and longer carrier lifetime ($0.15\;{\mu}s$ to $0.39\;{\mu}s$) comparing to the bare poly-crystalline silicon wafer. With optimizing the concentration ratio and the dilution ratio, we can not only effectively substitute the time consuming process of SDR to some extent but also skip plasma enhanced chemical vapor deposition (PECVD) process. Moreover, to conduct alkali texture for pyramidal structure on silicon wafer surface, we can use only nitric acid rich solution of the mixed acidic solution treatment instead of implementing SDR.