• Title/Summary/Keyword: $H_2SiF_6:SiO_3H_2$

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Fabrication of Doping-Free Hydrogenated Amorphous Silicon Thin Film Solar Cell Using Transition Metal Oxide Window Layer and LiF/Al Back Electrode

  • Jeong, Hyeong-Hwan;Kim, Dong-Ho;Gwon, Jeong-Dae;Jeong, Yong-Su;Jeong, Gwon-Beom;Park, Seong-Gyu
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.193-193
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    • 2013
  • 실리콘 박막 태양전지는 광 흡수층에서 형성된 정공과 전자를 효과적으로 분리하기 위해 p형과 n형으로 도핑된 층을 형성하는 p-i-n구조를 갖게 된다. 이러한 도핑 층을 형성하기 위해 B2H6와 PH3와 같은 독성 가스를 사용하기 때문에, 공정 안정성과 환경적인 이슈가 대두된다. 또한 도핑은 추가적으로 실리콘 박막 태양전지의 안정화 효율을 지속적으로 저하시키는 요인이 된다. 이러한 문제점을 개선하기 위하여, 창층으로 MoO3, V2O5, WO3 등과 같이 높은 일함수를 갖는 전이금속 산화물을 사용하고, 광 흡수층으로 i-Si:H을, 후면 전극으로 낮은 일함수를 나타내는 LiF/Al을 사용하였다. 전이금속 산화물과 LiF/Al의 큰 일함수 차이에 의해서 흡수층인 i-Si:H 에서 생성된 캐리어들은 효과적으로 분리되고 수집이 된다. 금속 산화물은 스퍼터링 공정에 의하여 이루어졌으며, 스퍼터링 공정조건에 따라 산화도가 조절되며, 이러한 산화도에 따라 태양전지의 셀 특성이 결정된다. 도핑 층이 없는 새로운 형태의 실리콘 박막 태양전지는 기존 비정질 실리콘 박막 태양전지에 비해 높은 안정화 효율을 나타내며, 이는 도핑 층이 없기 때문에 기존 실리콘 박막 태양전지의 열화현상에 따른 효율저하가 발생하지 않는 장점을 지내고 있다.

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The Effect of Passivation Film with Inorganic/Epoxy Layers on Life Time Characteristics of OLED Device (OLED 내구성에 미치는 무기/에폭시층 보호막의 영향)

  • Lim, Jung-A;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.42 no.6
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    • pp.287-293
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    • 2009
  • The passivation films with epoxy layer on LiF, $SiN_x$ and LiF/$SiN_x$ inorganic layer were fabricated on OLED to protect device from the direct damage of $O_2$ and $H_2O$ and to apply for a buffer layer between OLED device and passivation multi-layer with organic/inorganic hybrid structure as to diminish the thermal stress and expansion. Red OLED doped with 1 vol.% Rubrene in $Alq_3$ was used as a basic device. The device structure was multi-layer of ITO(150 nm) / ELM200_HIL(50 nm) / ELM002_HTL(30 nm) / $Alq_3$: 1 vol.% Rubrene(30 nm) / $Alq_3$(30 nm) / LiF(0.7 nm) / Al(100 nm). LiF/epoxy applied as a protective layer didn't contribute to the improvement of life time. While in case of $SiN_x$/epoxy, damage was done in the passivation process because of difference in heat expansion between films which could occur during the formation of epoxy film. Using LiF/$SiN_x$/epoxy improved lifetime significantly without suffering damage in the process of forming films, therefore, the best structure of passivation film with inorganic/epoxy layers was LiF/$SiN_x$/E1.

Effect of time variation on formation of oxide layers of AZ61 magnesium alloy by Electrolytic plasma processing (EPP공정시간에 따른 AZ61 마그네슘 합금 코팅층의 특성변화)

  • Jeong, Yeong-Seung;Park, Geun-Yeong;Kim, Seong-Jae;Gu, Bon-Heun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.281-282
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    • 2014
  • 본 연구는 공정시간에 따른 전해 플라즈마 공정(Electrolytic Plasma Processing, EPP) 공정에 의해 형성된 산화 코팅층의 특성 변화를 알아보고자 한다. 실험에 사용되는 전해용액은 $Na_2SiO_3$(12g/l) + $Na_2SiF_6$(0.3g/l)+NaOH(3g/l) 기본용액에 다양한 농도의 NaOH(0-5g/l) 첨가한 전해용액을 사용하였다. AZ61 마그네슘 합금을 모재($22{\Phi}{\times}10mm$)로 사용하였으며 실험은 5분-60분 동안 진행되었다. 공정시간에 변화에 따른 EPP 코팅층 특성을 측정한 결과 공정시간이 증가함에 따라 코팅층 표면의 기공 크기가 커지고 코팅층 내에 기공수가 즐어드는 것을 확인하였다. 또한 XRD 분석을 통하여 형성된 코팅층에서 MgO, Mg2SiO4 상이 나타난 것을 확인할 수 있었다.(No. 2011-0030058),(2012H1B8A2026212)

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Hydrogen Depth Profiling by Nuclear Resonance Reaction (공명 핵반응을 이용한 수소적층 분석)

  • Kim, Y. S.;Kim, J. M.;Hong, W.;Kim, D. K.;Cho, S. Y.;Woo, H. J.;Kim, N. B.
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.416-423
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    • 1993
  • Hydrogen depth profiling was performed by H(19F, $\alpha$${\gamma}$) nuclear resonance reactin . A cesium sputtering ion sorce and 1.7MV Tandem Van de Graaff accelerator was used for the production of 6.5MeV 19F ion. The ${\gamma}$ rays produced by the reaction were measure dby 3" $\times$3" and 6" $\times$8" Nal detectors . A test measurement was done for hydrogen contaminatin layer of a bare silicon wafer, Si3N4(H) and Zr(O)a-Si/Si for the purpose of verifying the applicability , detection limit and the reliability of the method.ility of the method.

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Synthesis and Crystal Structure of Lead Iodide in the Sodalite Cavities of Zeolite A (LTA)

  • Kim, Seok-Han;Lim, Woo-Taik;Kim, Ghyung-Hwa;Lee, Heung-Soo;Heo, Nam-Ho
    • Bulletin of the Korean Chemical Society
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    • v.27 no.5
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    • pp.679-686
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    • 2006
  • The positions of $PbI _2$ molecule synthesized into the molecular-dimensioned cavities of $\mid K_6 (Pb _4I_2)(PbI_2) _{0.67}-(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA have been determined. A single crystal of $\mid Pb _6\mid [Si _{12}Al _{12}O _{48}]$-LTA, prepared by the dynamic ion-exchange of $\mid Na _{12}\mid [Si _{12}Al _{12}O _{48}]$-LTA with aqueous 0.05 M $Pb _(NO _3)_2$ and washed with deionized water, was placed in a stream of flowing aqueous 0.05 M KI at 294 K for three days. The resulting crystal structure of the product $( \mid K_6 (Pb _4I_2)(PbI_2) _{0.67}(H_2O)_2\mid [Si _{12}Al _{12}O _{48}]$-LTA, a = 12.353(1) $\AA$) was determined at 294 K by single-crystal X-ray diffraction in the space group Pm3 m. It was refined with all measured reflections to the final error index $R_1$ = 0.062 for 623 reflections which $F_o$ > 4$\sigma$($F_o$). 4.67 $Pb ^{2+}$ and six $K^+$ ions per unit cell are found at three crystallographically distinct positions: 3.67 $Pb ^{2+}$ and three $K^+$ ions on the 3-fold axes opposite six-rings in the large cavity, three $K^+$ ions off the plane of the eight-rings, and the remaining one $Pb ^{2+}$ ion lies opposite four-ring in the large cavity. 0.67 $Pb ^{2+}$ ions and 1.34 $I^-$ ions per unit cell are found in the sodalite units, indicating the formation of a $PbI _2$ molecule in 67% of the sodalite units. Each $PbI _2$ (Pb-I = 3.392(7) $\AA$) is held in place by the coordination of its one $Pb ^{2+}$ ion to the zeolite framework (a $Pb ^{2+}$ cation is 0.74 $\AA$ from a six-ring oxygens) and by the coordination of its two $I^-$ ions to $K^+$ ions through six-rings (I-K = 3.63(4) $\AA$). Two additional $I^-$ ions per unit cell are found opposite a four-ring in the large cavity and form $Pb _2K_2I^{5+}$ and $Pb _2K_2I^{3+}$ moieties, respectively, and two water molecules per unit cell are also found on the 3-fold axes in the large cavity.

Durability and Crack Control of Concrete Using Fluosilicates Based Composite (규불화염계 복합 조성물을 혼입한 콘크리트의 균열제어 및 내구성)

  • Yun, Hyun-Do;Yang, Il-Seung;Kim, Do-Su;Khil, Bae-Su;Han, Seung-Gu
    • Journal of the Korea Concrete Institute
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    • v.18 no.1 s.91
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    • pp.57-64
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    • 2006
  • The crack presented in concrete structures causes a structural defect, the durability decrease, and external damages etc. Therefore, it is necessary to improve durability through the effort to control the crack. Fluosilicic acid($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicates prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicates to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. Mix proportions for experiment were modulated at 0.45 of water to cement ratio and $0.0{\sim}2.0%$ of adding ratio of fluosilicate salt based inorganic compound. To evaluate correlation of concrete strength and adding ratio of fluosilicate salt based inorganic compound, the tests were performed about design strength(21, 24, 27 MPa) with 0.5% of adding ratio of fluosilicate salt based inorganic compound. Applications of fluosilicate salt based inorganic compound to reduce cracks resulted from plastic and drying shrinkage, to improve durability are presented in this paper. Durability was evaluated as neutralization, chloride ion penetration depth, freezing thawing resistant tests and weight loss according reinforcement corrosion. It is ascertained that the concrete added fluosilicate salt based inorganic compound showed m ability to reduce the total area and maximum crack width significantly as compared non-added concrete. In addition, the durability of concrete improved because of resistance to crack and watertightness by packing role of fluosilicate salt based inorganic compound obtained and pozzolanic reaction of soluble $SiO_2$ than non-added concrete.

Single-crystal Structure of Partially Dehydrated Partially Mg2+-exchanged Zeolite Y (FAU), |Mg30.5Na14(H2O)2.5|[Si117Al75O384]-FAU

  • Kim, Hu-Sik;Ko, Seong-Oon;Lim, Woo-Taik
    • Bulletin of the Korean Chemical Society
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    • v.32 no.10
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    • pp.3696-3701
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    • 2011
  • The single-crystal structure of partially dehydrated partially $Mg^{2+}$-exchanged zeolite Y, ${\mid}Mg{30.5}Na_{14}(H_2O)_{2.5}{\mid}$ [$Si_{117}Al_{75}O_{384}$]-FAU per unit cell, ${\alpha}$ = 25.5060(1) ${\AA}$, dehydrated at 723 K and $1{\times}10^{-4}$ Pa, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd$\bar{3}$ m at 100(1) K. The structure was refined using all intensities to the final error indices (using only the 561 reflections with $F_{\circ}$ > $4{\sigma}(F_{\circ})$) $R_1$ = 0.0377 (Based on F) and $R_2$ = 0.1032 (Based on $F^2$). About 30.5 $Mg^{2+}$ ions per unit cell are found at four different crystallographic sites. The 14 $Mg^{2+}$ ions occupy at site I at the center of double 6-ring (Mg-O = 2.231(3) ${\AA}$, O-Mg-O = $89.15(11)^{\circ}$ and $90.85(11)^{\circ}$). Four $Mg^{2+}$ ions are found at site I' in the sodalite cavity; the $Mg^{2+}$ ions are recessed 1.22 ${\AA}$ into the sodalite cavity from their 3-oxygen plane (Mg-O = 2.20(3) ${\AA}$ and O-Mg-O = $92.3(14)^{\circ}$). Site II' positions (opposite single 6-rings in the sodalite cage) are occupied by 2.5 $Mg^{2+}$ ions, each coordinated to an $H_2O$ molecule (Mg-O = 2.187(20) ${\AA}$ and O-Mg-O = $114.2(16)^{\circ}$). The 10 $Mg^{2+}$ ions are nearly three-quarters filled at site II in the supercage, being recessed 0.12 ${\AA}$ into the supercage (Mg-O = 2.123(4) A and O-Mg-O = $119.70(19)^{\circ}$). About 14 $Na^+$ ions per unit cell are found at one crystallographic site; the $Na^+$ ions are located at site II in the supercage (Na-O = 2.234(7) ${\AA}$ and O-Mg-O = $110.5(4)^{\circ}$).

Fabrication and characteristics of TFEL device using phosphor layer ZnS:Mn/$ZnS:TbF_{3}$ slatted structure (ZnS:Mn/$ZnS:TbF_{3}$ 적층구조의 형광층을 이용한 TFEL소자의 제작 및 그 특성)

  • Park, Kyung-Vin;Kim, H.W.;Bae, S.C.;Kim, Y.J.;Cho, K.H.;Kim, K.W.
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.63-71
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    • 1997
  • The thin-film eletroluminescent (TFEL) device having the stacked structure of ZnS:Mn/$ZnS:TbF_{3}$ has been fabricated. Insulate layers used (Pb,La)$TiO_{3}$ and $SiO_{2}$ thin films. The emission color was white. The TFEL device employing ZnS:Mn/$ZnS:TbF_{3}(8000{\AA})$ stacked phosphor layers showed the threshold voltage of $78V_{rms}$. And the brightness of the TFEL device was $400{\mu}W/cm^{2}$ at the applied voltage of $100V_{rms}$. The emission spectrum of TFEL device had a wavelength from 450nm to 620nm. The manufactured devices can be a practical use as a TFEL devices of red, green and blue by using the color filters.

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Manufacture of $\beta-SiC-TiB_2$ Composites Densified by Liquid-Phase Sintering (액상소결에 의한 $\beta-SiC-TiB_2$ 복합체의 제조와 특성)

  • Shin, Yong-Deok;Ju, Jin-Young;Park, Mi-Lim;So, Byung-Moon;Lim, Seung-Hyuk;Song, Joon-Tae
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.479-481
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    • 2000
  • The effect of $Al_{2}O_{3}+Y_{2}O_{3}$ additives on fracture toughness of $\beta-SiC-TiB_2$ composites by hot-pressed sintering were investigated. The f$\beta-SiC-TiB_2$ ceramic composites were hot-presse sintered and annealed by adding 16, 20, 24wt% $Al_{2}O_{3}+Y_{2}O_{3}$(6 : 4wt%) powder as a liquid forming additives at low temperature($1800^{\circ}C$) for 4h. In this microstructures, the relative density is over 95.88% of the theoretical density and the porosity increased with increasing $Al_{2}O_{3}+Y_{2}O_{3}$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest of $5.88MPa{\cdot}m^{1/2}$ for composites added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature. The electrical resistivity showed the lowest of $5.22{\times}10^{-4}\Omega{\cdot}cm$ for composite added with 20wt% $Al_{2}O_{3}+Y_{2}O_{3}$ additives at room temperature and is all positive temperature coefficient resistance (PTCR) against temperature up to $700^{\circ}C$.

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Soft Magnetic Properties of Fe-Hf-N Films Reacted with Bonding Glass (접합유리와 반응된 Fe-Hf-N 박막의 연자기 특성)

  • Kim, Kyung-Nam;Kim, Byong-Ho;Je, Hae-June
    • Journal of the Korean Magnetics Society
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    • v.13 no.1
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    • pp.6-14
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    • 2003
  • The purpose of this study is to investigate the effect of chemical reaction with a bonding glass on physical and magnetic properties of Fe-Hf-N/SiO$_2$ and Fe-Hf-N/Cr/SiO$_2$ thin films. When the Fe-Hf-N/SiO$_2$ films were reacted with the bonding glass, the soft magnetic properties of them were extremely degraded. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 1 kG, and its coercivity increased to 27 Oe, and its effective permeability decreased to 70. It was found that the degradation of soft magnetic properties of the Fe-Hf-N/SiO$_2$ films reacted with the bonding glass were attributed to the oxidation of the Fe-Hf-N layers to HfO$_2$ and Fe$_3$O$_4$. The soft magnetic properties of the Fe-Hf-N/Cr/SiO$_2$ films reacted with the bonding glass were degraded less than those of Fe-Hf-N/SiO$_2$ films. At $600^{\circ}C$, the saturation magnetization of the reacted film decreased to 13.5 kG, and its coercivity increased to 4 Oe, and its effective permeability decreased to 700. It was found that the Cr layer suppressed the oxidation of the Fe-Hf-N layers during the chemical reaction between the Fe-Hf-N layer and bonding glass.