• Title/Summary/Keyword: $H_2O$ gas

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Fabrication of C2H2 Gas Sensors Based on Ag/ZnO-rGO Hybrid Nanostructures and Their Characteristics (Ag/ZnO-rGO 하이브리드 나노구조 기반 C2H2 가스센서의 제작과 그 특성)

  • Lee, Kwan-Woo;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.41-46
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    • 2015
  • In this work, pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped hierarchical ZnO structure was synthesized uniformly through photochemical route. The reduced graphene oxide (rGO) has been synthesized by typical Hummer's method and reduced by hydrazine. Prepared Ag/ZnO nanostructures are uniformly dispersed on the surface of rGO sheets using ultrasonication process. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. The average size of prepared ZnO microspheres was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of doped-Ag nanoparticles was 50 nm and decorated into ZnO/rGO network. The $C_2H_2$ gas sensing properties of as-prepared products were investigated using resistivity-type gas sensor. Ag/ZnO-rGO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the Ag/ZnO. The $C_2H_2$ sensor based on Ag/ZnO-rGO had linear response property from 3~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 22% and 78% for Ag/ZnO and Ag/ZnO-rGO, respectively. In additions, the sensor still shows high sensitivity and quick response/recovery to $C_2H_2$ under high relative humidity conditions. Moreover, the device shows excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

The properties of Al-doped ZnO films deposited with RF magnetron sputtering system in various H2/(Ar + H2) gas ratios (RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/(Ar + H2) 가스 비율에 따른 특성)

  • Kim, Jwa-Yeon;Han, Jung-Su
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.22 no.3
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    • pp.122-126
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    • 2012
  • The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

Effect of Process Parameters of UV Enhanced Gas Phase Cleaning on the Removal of PMMA (Polymethylmethacrylate) from a Si Substrate

  • Kwon, Sung Ku;Kim, Do Hyun
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.204-207
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    • 2016
  • Experimental study of UV-irradiated O2/H2 gas phase cleaning for PMMA (Polymethylmethacrylate) removal is carried out in a load-locked reactor equipped with a UV lamp and PBN heater. UV enhanced O2/H2 gas phase cleaning removes polymethylmethacrylate (PMMA) better at lower process pressure with higher content of H2. O2 gas compete for UV (184.9 nm) absorption with PMMA producing O3, O(1D) and lower dissociation of PMMA. In our experimental conditions, etching reaction of PMMA at the substrate temperature between 75℃ and 125℃ had activation energy of about 5.86 kcal/mol indicating etching was controlled by surface reaction. Above the 180℃, PMMA removal was governed by a supply of reaction gas rather than by substrate temperature.

Fabrication of C2H2 Gas Sensors Based on Ag-Doped Hierarchical ZnO Nanostructures and Their Characteristics (Ag가 도핑된 계층적 ZnO 나노구조 기반 C2H2 가스센서의 제작과 그 특성)

  • Lee, Kwan-Woo;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.23 no.6
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    • pp.397-401
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    • 2014
  • This paper describes the fabrication and characteristics of $C_2H_2$ gas sensor based on Ag-doped hierarchical ZnO nanostructures. In this work, a pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped the hierarchical ZnO structure were uniformly synthesized through photochemical route. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. Average size of prepared ZnO structures was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of Ag nanoparticles was 70 nm. The gas sensing properties of as-prepared products were investigated using resistivity-type gas sensors. 5 at% Ag-doped ZnO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the un-doped one. The sensor based on Ag-doped hierarchical ZnO structures had linear response property from 5~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 10% and 75% for pure and 5 at% Ag-doped hierarchical ZnO nanostructures, respectively. Moreover, the device showed excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

H2 gas sensing characteristics of SnO2 nano-powdersprepared by homogeneous precipitation method (균일침전법을 이용한 SnO2 나노분말의 H2 감지 특성)

  • Kim, Yeong-Bok;Lee, Woon-Young;Park, Jin-Seong
    • Journal of Sensor Science and Technology
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    • v.17 no.5
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    • pp.361-368
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    • 2008
  • Nanosized $SnO_2$ particles were synthesized by homogeneous precipitation method using tin chloride ($SnCl_4{\cdot}5H_{2}O$) and urea ($CO(NH_2)_2$). The powders were heated at $500^{\circ}C$ and $600^{\circ}C$ for 2h. The crystal structure, microstructure, thermal behavior, specific surface area were analyzed using XRD, FE-SEM, TGA and BET, respectively. The initial resistance and the $H_2$ sensing properties were measured as a function of ${Sb_2}{O_3}$ and Pd doping concentrations. The resistance was decreased with the addition of ${Sb_2}{O_3}$ and the sensitivity for $H_2$ gas was increased with the addition of Pd. Thus, the optimum $H_2$ gas sensing property was obtained in the 0.25.mol% ${Sb_2}{O_3}$ and 1.w% added $SnO_2$ powders.

Hydrogen Gas Sensor Performance of a p-CuO/n-ZnO Thin-film Heterojunction (p-CuO/n-ZnO 이종접합 박막 구조의 수소 가스 특성 평가)

  • Yang, Yijun;Maeng, Bohee;Jung, Dong Geon;Lee, Junyeop;Kim, Yeongsam;An, Hee Kyung;Jung, Daewoong
    • Journal of Sensor Science and Technology
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    • v.31 no.5
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    • pp.337-342
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    • 2022
  • Hydrogen (H2) gas is widely preferred for use as a renewable energy source owing to its characteristics such as environmental friendliness and a high energy density. However, H2 can easily reverse or explode due to minor external factors. Therefore, H2 gas monitoring is crucial, especially when the H2 concentration is close to the lower explosive limit. In this study, metal oxide materials and their p-n heterojunctions were synthesized by a hydrothermal-assisted dip-coating method. The synthesized thin films were used as sensing materials for H2 gas. When the H2 concentration was varied, all metal oxide materials exhibited different gas sensitivities. The performance of the metal oxide gas sensor was analyzed to identify parameters that could improve the performance, such as the choice of the metal oxide material, effect of the p-n heterojunctions, and operating temperature conditions of the gas sensor. The experimental results demonstrated that a CuO/ZnO gas sensor with a p-n heterojunction exhibited a high sensitivity and fast response time (134.9% and 8 s, respectively) to 5% H2 gas at an operating temperature of 300℃.

Development of High Sensitive Integrated Dual Sensor to Detect Harmful Exhaust Gas and Odor for the Automotive (악취분별능력을 가진 자동차용 고기능 듀얼타입 집적형 유해가스 유입차단센서 개발)

  • Chung, Wan-Young;Shim, Chang-Hyun
    • Journal of Institute of Control, Robotics and Systems
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    • v.13 no.7
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    • pp.616-623
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    • 2007
  • A dual micro gas sensor array was fabricated using nano sized $SnO_2$ thin films which had good sensitivities to CO and combustible gases, or $H_2S$ gas for air quality sensors in automobile. The already existed air quality sensor detects oxidizing gases and reducing gases, the air quality sensor(AQS), located near the fresh air inlet detected the harmful gases, the fresh air inlet door/ventilation flap was closed to reduce the amount of pollution entering the vehicle cabin through HVAC(heating, ventilating, and air conditioning) system. In this study, to make $SnO_2$ thin film AQS sensor, thin tin metal layer between 1000 and $2000{\AA}$ thick was oxidized between 600 and $800^{\circ}C$ by thermal oxidation. The gas sensing layers such as $SnO_2$, $SnO_2$(pt) and $SnO_2$(+CuO) were patterned by metal shadow mask for simple fabrication process on the silicon substrate. The micro gas sensors with $SnO_2$(+Pt) and $SnO_2$(CuO) showed good selectivity to CO gas among reducing gases and good sensitivity to $H_2S$ that is main component of bad odor, separately.

Characteristics of Indium Doped SnO2 Thick Film for Gas Sensors (Indium 첨가된 SnO2 후막형 가스센서의 특성)

  • Yu, Il;Lee, Ji-Young
    • Korean Journal of Materials Research
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    • v.20 no.8
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    • pp.408-411
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    • 2010
  • Indium doped $SnO_2$ thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the $SnO_2$ were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the $SnO_2$:In by X-ray diffraction showed a (110) dominant $SnO_2$ peak. The size of $SnO_2$ particles ranged from 0.05 to $0.1\;{\mu}m$, and $SnO_2$ particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped $SnO_2$ thick films for gas sensors was about $20\;{\mu}m$, as confirmed by cross sectional SEM image. Sensitivity of the $SnO_2$:In gas sensor to 2000 ppm of $CO_2$ gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to $CO_2$ gas and H2S gas of the indium-doped $SnO_2$ thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped $SnO_2$ gas sensors to $CO_2$ gas were attributed to the increase of oxygen vacancies and surface area in the $SnO_2$:In. The $SnO_2$:In gas sensors showed good selectivity to $CO_2$ gas.

Enhanced Hydrogen Gas Sensing Properties of ZnO Nanowires Gas Sensor by Heat Treatment under Oxygen Atmosphere (산소 분위기 열처리에 따른 ZnO 나노선의 상온 영역에서의 수소가스 검출 특성 향상)

  • Kang, Wooseung
    • Journal of the Korean institute of surface engineering
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    • v.50 no.2
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    • pp.125-130
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    • 2017
  • ZnO nanowires were synthesized and annealed at various temperatures of $500-800^{\circ}C$ in oxygen atmosphere to investigate hydrogen gas sensing properties. The diameter and length of the synthesized ZnO nanowires were approximately 50-100 nm and a few $10s\;{\mu}m$, respectively. $H_2$ gas sensing performance of the ZnO nanowires sensor was measured with electrical resistance changes caused by $H_2$ gas with a concentration of 0.1-2.0%. The response of ZnO nanowires at room temperature to 2.0% $H_2$ gas is found to be two times enhanced by annealing process in $O_2$ atmosphere at $800^{\circ}C$. In the current study, the effect of heat treatment in $O_2$ atmosphere on the gas sensing performance of ZnO nanowires was studied. And the underlying mechanism for the sensing improvement of the ZnO nanowires was also discussed.

Highly Sensitive and Selective Gas Sensors Using Catalyst-Loaded SnO2 Nanowires

  • Hwang, In-Sung;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
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    • v.21 no.3
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    • pp.167-171
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    • 2012
  • Ag- and Pd-loaded $SnO_2$ nanowire network sensors were prepared by the growth of $SnO_2$ nanowires via thermal evaporation, the coating of slurry containing $SnO_2$ nanowires, and dropping of a droplet containing Ag or Pd nanoparticles, and subsequent heat treatment. All the pristine, Pd-loaded and Ag-loaded $SnO_2$ nanowire networks showed the selective detection of $C_2H_5OH$ with low cross-responses to CO, $H_2$, $C_3H_8$, and $NH_3$. However, the relative gas responses and gas selectivity depended closely on the catalyst loading. The loading of Pd enhanced the responses($R_a/R_g$: $R_a$: resistance in air, $R_g$: resistance in gas) to CO and $H_2$ significantly, while it slightly deteriorated the response to $C_2H_5OH$. In contrast, a 3.1-fold enhancement was observed in the response to 100 ppm $C_2H_5OH$ by loading of Ag onto $SnO_2$ nanowire networks. The role of Ag catalysts in the highly sensitive and selective detection of $C_2H_5OH$ is discussed.