• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1878-1880
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• 2005

In this research, We investigated the effect of $O_2/O_3$ Plasma treatment of indium-tin oxide (ITO) surface on the performance of organic light emitting devices (OLEDs). The OLED had a structure of ITO/N,N'-diphenyl-N,N' -(3-methylphenyl)-1, 1'-biphenyl-4-4'-diamine (TPD)/Tris (8-hydroxyquinolinato) Aluminum $(Alq_3)/Al$. The ITO surface was treated by $O_2/O_3$ plasma with different RF power chamber pressure and exposure time. As a result, the emission efficiency of the OLEDs could be improved obviously.

• 한국대기환경학회지
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• 제16권3호
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• pp.247-256
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• 2000

Basic characteristics of non-thermal plasma process to remove C2H4 and NO have been experimentally investigated with a packed-bed type reactor and an ac power supply. The performance of the non-thermal plasma generated by ac power supply was compared with that of a wire-plate type reactor equipped with a pulsed power supply. The result shows that the non-thermal plasma can be effectively generated with an AC power supply that can be easily fabricated with conventional techniques. In order to understand the basic reaction mechanisms of the non-thermal plasma process, parametric tests for different carrier gases(air and nitrogen) and for different reaction pathways have been performed. The test results show that O3 generated by non-thermal plasma plays an dominant role to oxidize C2H4 and NO over N and O radicals when these pollutant gases are carried by dry air under room temperature condition. Experimental observations, however, indicate that N and O radicals can significantly affect on the removal process of the pollutant gases under certain conditions.

• 한국진공학회지
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• 제17권3호
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• pp.199-203
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• 2008

$O_2$ 플라즈마를 이용한 표면처리 공정이 Bio-FET (biologically sensitive field-effect transistor)에 미치는 영향을 조사하기 위하여, SOI (Silicon-on-Insulator) wafer와 sSOI (strained- Si-on-Insulator) wafer를 이용하여 pseudo-MOSFET을 제작하고 $O_2$ 플라즈마를 이용하여 표면처리를 진행하였다. 제작된 시료들은 back gated metal contact junction 방식으로 측정되었다. $I_D-V_G$ 특성과 field effect mobility 특성의 관찰을 통하여 $O_2$ 플라즈마 표면처리에 따른 각 시료들의 전기적 특성 변화에 대하여 관찰하였다. 그리고 $O_2$ 플라즈마 표면처리 과정에서 플라즈마에 의한 손상을 받은 시료들은 2% 수소희석가스 ($H_2/N_2$)를 이용한 후속 열처리 공정을 진행한 후 전기적 특성이 향상되는 것을 관찰할 수 있었다. 이는 수소희석가스를 이용한 후속 열처리 공정을 통하여 산화막과 Si 사이의 계면 준위와 산화막 내부의 전하 포획 준위를 감소시켰기 때문이다.

• Journal of Magnetics
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• 제5권3호
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• pp.99-101
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• 2000

Oxygen-plasma effects of single crystal and thin film samples of $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of $Mn^{3+}$ concentration in oxygen nonstoichiometric $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ and in the activation energies of Holstein's small polarons in the paramagnetic region.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.268-272
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• 2000

Oxygen-plasma effects of single crystal and thin film samples of L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of M $n^{3+}$ concentration in oxygen nonstoichiometric L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ and in the activation energies of Holstein's small polarons in the paramagnetic region.n.egion.n.n.

• 한국진공학회지
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• 제4권S1호
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• pp.1-6
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• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 추계학술대회 논문집
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• pp.147-148
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• 2007

The compound, Ti3(Al,Si)C2, was synthesized by hot pressing a powder mixture of TiCX, Al and Si. Its oxidation at 900 and 1000 oC in air for up to 50 h resulted in the formation of rutile-TiO2, -Al2O3 and amorphous SiO2. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen was transported inwards to form the inner mixed layer.

• 조명전기설비학회논문지
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• 제22권8호
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• pp.75-81
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• 2008

본 논문은 플라즈마를 이용한 수처리 연구를 수행하였다. 이 연구에 사용한 수중플라즈마 토치는 상당한 전력의 절감을 가져올 수 있기 때문에 경제적인측면과 에너지효율면에서 뛰어난 결과를 나타내었다. 수중에서 일어나는 스트리머방전과 아크방전 현상을 면밀히 조사하여 비교하였고, 또한 염색페수를 플라즈마로 처리하였을 시의 색도제거율과 용존오존, 과산화수소와의 상관관계를 알기위해 표본화하고 분석하였다. 이에 플라즈마토치에는 선택적인 산화반응이 다소 있긴 하지만, 플라즈마화학반응에 의한 $H_2O_2$와 $O_3$의 성장이 아크방전 보다 스트리머방전시 더 효과적으로 촉진된다는 것을 알 수 있었다. 따라서 스트리머방전이 아크플라즈마 토치에 비해 더 효율적인 플라즈마 화학반응을 일으킬 수 있는 환경을 만들어주므로, 수처리에 있어서 스트리머플라즈마토치가 더 적합하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.71-72
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• 2007

In this study, we investigated the fabrication of MLR (multi-layer resist) with a very thin diamond-like carbon (DLC) layer. ArF PR/$SiO_2$/DLC MLR structure was investigated and etching characteristics of the DLC layer was patterned using $SiO_2$ hard-mask by varying the process parameters such as different high-frequency/low-frequency combination ($f_{LF}/f_{HF}$), HF/LF power ratio ($P_{HF}/P_{LF}$), $O_2$ flow and $N_2$ flow rate in $O_2/N_2$/Ar plasmas. The results indicated an increased etch rate of DLC for the higher $f_{LF}/f_{HF}$ combination and for the increased low-frequency power ($P_{LF}$). And the etch rate of DLC was decreased with increasing the $N_2$ flow rate in $O_2/N_2$/Ar plasmas. In order to confirm the application of DLC MLR for the etching process of silicon oxide, the stack of ArF PR/BARC/$SiO_2$/DLC/TEOS/Si was investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.917-921
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• 2002

In this paper, we made different types of non-thermal plasma reactors such as Metal-particle reactor with $Al_2O_3$ to measure NOx removal characteristic and the dielectric effect for NOx removal. NOx removal rate is not so good when we use just dielectric of $Al_2O_3$ at the Metal-particle reactor, also we just put sludge pellets(100%) without Metal-particle reactor with $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ to measure the effect of sludge for NOx removal so that NOx removal rate is almost the same. However NOx removal rate is more than 90% in case of the reactor of composition shape used both dielectric of $Al_2O_3$ and sludge pellets at the same time. In case of the shape of plasma reactor with dielectric, the Metal-particle reactor with $Al_2O_3$, and the metal-particle reactor with both $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ at the same time, they are almost the same effect for NOx removal, so we made MNPR(Metal-particle Non-thermal Plasma Reactor with $Al_2O_3$) to reduce these kinds of demerits. Finally, we think MNPR should be much better than other reactors for NOx removal.