• Journal of Korea Foundry Society
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• v.15 no.2
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• pp.175-183
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• 1995

It is difficult to remove such interstitial impurities as sulfur, oxygen, hydrogen and carbon in Fe-Ni alloys. Thermodynamic and kinetic studies were carried out on the behavior of hydrogen gas, oxygen gas, Si, Al and slag, and the reaction time by the $Ar/Ar-H_2$ plasma and electron beam melting. After the addition of Al, Si, they were melted by Ar plasma with reaction time changed. 80%Ni-Fe alloys showed a better deoxidation than 36%Ni-Fe alloys. At $Ar-H_2$ plasma melting, the deoxidation was significant. In the case of the electron beam melting, the residual oxygen was higher than in Ar plasma melting because electron beam melting temperature was lower than that of Ar plasma. For the decaburization, it was melted by $Ar-O_2$ plasma melting, which could remove effectively carbon by activated oxygen in plasma. We added slag to Fe-Ni alloys for the desulfurization. As the result of this experiments, the amount of residual sulfur was not changed according to the slag ratio and reaction time.

• Journal of Powder Materials
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• v.8 no.1
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• pp.35-41
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• 2001

$BaTiO_3$ fine powder was synthesized by hydrothermal process from the mixture of titania-hydroxide($TiO_2{\cdot}xH_2O$) and barium hexa-hydroxide ($Ba(OH)_2{\cdot}8H_2O$) as starting materials. Fine powder(< 100 nm) was made under the reaction conditions of 18$0^{\circ}C$,10 atm, 1.5 hr in autoclave and showed cubic structure. The powders were sintered by a spark plasma sintering technique from 1050~115$0^{\circ}C$ for 5 min. The grains of sample sintered at 110$0^{\circ}C$ were about 0.9${\mu}m$ in average size and showed the mixture of cubic and tetragonal structures.

• Journal of the Semiconductor & Display Technology
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• v.21 no.3
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• pp.74-79
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• 2022

In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y₂O₃ and Y₃Al₅O₁₂ (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF₄, O₂, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H₂SO₄(3):H₂O₂(1)) to remove the defect-causing surface fluorinated film. APS-Y₂O₃ and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.442-442
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• 2008

Hydrogen was produced by water plasma excited in very high frequency inductively coupled tube reactor. Mass spectrometry was used to monitor gas phase species at various process conditions. Water dissociation rate depend on the process parameters such as ICP power, flow-rate and pressure. Water dissociation percent in ICP reactor decrease with increase of chamber pressure and $H_2O$ flow rate, while increase with increase of ICP power. In our experimental range, maximum water dissociation rate was 65.5% at the process conditions of 265 mTorr, 68 sccm, and 400 Watt. The effect of $CH_4$ addition to a water plasma on the hydrogen production has been studied in a VHF ICP reactor. With the addition of $CH_4$ gas, $H_2$ production increases to 12% until the $CH_4$ flow rate increases up to 15 sccm. But, with the flow rate of $CH_4$ more than 20 sccm, chamber wall was deposited with carbon film because of deficiency of oxygen in gas phase, hydrogen production rate decreased. The main roles of $CH_4$ gas are to reacts with O forming CO, CHO and $CO_2$ and releasing additional $H_2$ and furthermore to prevent reverse reaction for forming $H_2O$ from $H_2$ and $O_2$. But, $CH_4$ addition has negative effects such as cost increase and $CO_x$ emission, therefore process optimization is required.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.7
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• pp.45-51
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• 2013

This study is to discuss simulation results with 51 principal chemical reactions in non-thermal plasma space under atmospheric pressure, and the ambient gas was mainly composed of oxygen and nitrogen molecules. The initial density of O and OH radicals under the ambient temperature of 300K is largely generated in comparison with other higher temperature, and the density of O radical decreased from $20{\mu}s$ according to increase the temperature. The initial density of OH radical seemed to decrease steeply at the initial stage. By increasing the initial density of $H_2O$ molecules, O radical's effect was few and the density of OH radical was largely generated about 2 times. In addition, ozone density was increased as increasing the density of O radical, but it was decreased as increasing the density of $H_2O$. In case of the temperature more than 300K, $NO_2$ tend to be removed, but NO was increased than the initial density.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.164-174
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• 2018

The purpose of this work designed hybrid-structured and plasma effect photocatalyst of $Ag/In_2O_3/TiO_2/HNTs$ via sol-gel and photo-reduction methods. The structures, morphologies, optical and photoelectric performances of as-prepared photocatalysts were characterized via XRD, TEM, XPS, BET, UV-vis DRS, PL and photocurrents. The photocatalytic activity was evaluated by degradation of TC. The results showed that the hybrid-structure and plasma effect can effectively cause the multi-transfer of electrons and increase the separation rate of electron and hole pairs which obtained high photocatalytic activity. The photocatalytic degradation processes reveal that $^{\bullet}O_2{^-}$ and $h^+$ are major active species.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.7
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.

• Korean Journal of Materials Research
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• v.19 no.10
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.270-270
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• 2012

Low temperature atmospheric pressure plasmas (APPs) have been known to be effective for living cell inactivation in the water [1]. Many earlier research found that pH level of the solution was changed from neutral to acidic after plasma treatment. The importance of the effect of acidity of the solution for cell treatments has already been reported by many experiments. In addition, several studies have demonstrated that the addition of a small amount of oxygen to pure helium results in higher sterilization efficiency of APPs [2]. However, it is not clear yet which species are key factors for the cell treatment. To find key factors, we used GMoo simulation. We elucidate the processes through which pH level in the solution is changed from neutral to acidic after plasma exposure and key components with pH and air variation with using GMoo simulation. First, pH level in a liquid solution is changed by He+ and He(21S) radicals. Second, O3 density decreases as pH level in the solution decreases and air concentration decreases. It can be a method of removing O3 that cause chest pain and damage lung tissue when the density is very high. H2O2, HO2 and NO radicals are found to be key factors for cell inactivation in the solution with pH and air variation.