• Title/Summary/Keyword: $Gd_2O_3

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Fabrication of $Gd_2O_3:Eu^{3+}$ Nano Phosphor and Optical Characteristics for High Resolution Radiation Imaging (고해상도 방사선 영상을 위한 $Gd_2O_3:Eu^{3+}$ 나노 형광체 제조 및 광학적 특성)

  • Kim, So-Yeong;Kang, Sang-Sik;Park, Ji-Koon;Cha, Byung-Youl;Choe, Chi-Won;Lee, Hyung-Won;Nam, Sang-Hee
    • Journal of Biomedical Engineering Research
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    • v.28 no.1
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    • pp.148-152
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    • 2007
  • In this paper, we have synthesized $Gd_2O_3:Eu^{3+}$ nano phosphor particle using a low temperature solution-combustion method. We have investigated the structure and the luminescent characteristic as the sintering temperature and europium concentration. From XRD(X-ray diffraction) and SEM(scanning electron microscope) results, we have verified that the phosphor particle was fabricated a spherical shape with $30{\sim}40nm$ particle size. From the photoluminescence results, the strong peak exhibits at 611 um and the luminescent intensity depends on europium concentration. $Gd_2O_3:Eu$ fine phosphor particle has shown excellent luminescent efficiency at 5 wt% of europium concentration. The phosphors calcinated at $500^{\circ}C$ have possessed the x-ray peaks corresponding to the cubic phase of $Gd_2O_3$. As calcinations temperature increased to $700^{\circ}C$, the new monoclinic phase has identified except cubic patterns. From the luminescent decay time measurements, mean lifetimes were $2.3{\sim}2.6ms$ relatively higher than conventional bulk phosphors. These results indicate that $Gd_2O_3:Eu$ nano phosphor is possible for the operation at the low x-ray dose, therefore, the application as medical imaging detector.

Preparation and Luminescent Properties of GdOBr:Ce Blue Phosphors for FED (FED용 GdOBr:Ce 청색 형광체의 제조 및 발광특성)

  • Lee, Jun;Park, Joung-Kyu;Han, Cheong-Hwa;Park, Hee-Dong;Yun, Sock-Sung
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.240-244
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    • 2002
  • The GdOBr:Ce phosphor were prepared by solid state reaction using starting chemicals of $Gd_2O_3,\;CeO_2\;and\;NH_4Br$. Under 370nm UV excitation, GdOBr:Ce phosphors showed blue emission band with a spectral range of 410∼430nm. The maximum photoluminescence(PL) emission intensity was observed at 2mol% Ce content. In order to look for feasibility of application for low voltage filed emission display, cathodoluminescence(CL) of GdOBr:Ce phosphors were measured. CL emission spectra was found to be in the range of 410∼430nm, which is the same as PL spectra. The phosphors with 1mol% Ce concentration showed the maximum CL emission intensity. For the comparison of degradation property of the prepared phosphors with commercial ones, the electron beam was applied for 10min. From the result, GdOBr:Ce could be used as a blue phosphor for FED.

졸-겔 방법을 이용한 BaGd2TiO13 구조의 제작

  • Lee, Su-Hyeon;Ramana, D.K. Venkata;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.424-424
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    • 2013
  • Ce3+, Sm3+, Eu3+, Tb3+ 등 희토류를 도핑한 여러 종류의 형광체는 백색 LED (white light-emitting diode), 전계방출표시소자(field emission display), 플라즈마디스플레이패널(plasma display panel), 약물 운송(drug delivery) 등 다양한 분야에서 응용되고 있다. 최근에는 졸-겔 방법(sol-gel method)을 이용하여Y2SiO5, Y3-XGdxAl5O12, SrAl2O4 등 여러 종류의 호스트 물질을 합성하여 형광체의 특성을 분석하는 연구가 활발히 진행되고 있다. 이러한 졸-겔 방법은 비교적 낮은 온도에서 간단한 공정으로 좋은 균질성과 높은 생산성을 갖도록 형광체를 제작할 수 있는 장점을 가지고 있다. 이에 본 연구에서는 졸-겔 방법을 이용하여 BaGd2TiO13구조를 제작하였고, 이러한 구조적, 광학적 특성을 분석하기 위하여 열분석기(thermal analyzer), 전계방출형주사전자현미경(field emission scanning electron microscopy), 투과전자현미경(field emission transmission electron microscopy)을 이용하였다. 이러한 졸-겔 방법을 이용하여 제작한 BaGd2TiO13 구조의 형광체 적용 연구를 통한 디스플레이 및 백색 LED 응용에 유용할 것으로 기대된다.

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Spark plasma sintering of UO2 fuel composite with Gd2O3 integral fuel burnable absorber

  • Papynov, E.K.;Shichalin, O.O.;Belov, A.A.;Portnyagin, A.S.;Buravlev, I.Yu;Mayorov, V.Yu;Sukhorada, A.E.;Gridasova, E.A.;Nomerovskiy, A.D.;Glavinskaya, V.O.;Tananaev, I.G.;Sergienko, V.I.
    • Nuclear Engineering and Technology
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    • v.52 no.8
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    • pp.1756-1763
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    • 2020
  • The paper studies spark plasma sintering (SPS) of industrially used UO2-based fuel containing integral fuel burnable absorber (IFBA) of neutrons Gd2O3. Densification dynamics of pristine UO2 powder and the one added with 2 and 8 wt% of Gd2O3 under ultrasonication in liquid has been studied under SPS conditions at 1050, 1250, and 1450 ℃. Effect of sintering temperature on phase composition as well as on O/U stoichiometry has been investigated for UO2 SPS ceramics. Sintering of uranium dioxide added with Gd2O3 yields solid solution (U,Gd)O2, which is isostructural to UO2. SEM with EDX and metallography were implemented to analyze the microstructure of the obtained UO2 ceramics and composite UO2-Gd2O3 one, particularly, open porosity, defects, and Gd2O3 distribution were studied. Microhardness, compressive strength and density were shown to reduce after addition of Gd2O3. Obtained results prove the hypothesis on formation of stable pores in the system of UO2-Gd2O3 due to Kirkendall effect that reduces sintering efficiency. The paper expands fundamental knowledge on pros and cons of fuel fabrication with IFBA using SPS technology.

Effects of Fe2O3 Additions on Sintering Behavior and Electrical Property of Ce0.8Gd0.2O1.9 Ceramics (Ce0.8Gd0.2O1.9 세라믹스의 소결거동과 전기적 특성에 미치는 Fe2O3의 첨가효과)

  • Choi, Kwang-Hoon;Lee, Joo-Sin;Choi, Yong-Gyu
    • Korean Journal of Materials Research
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    • v.17 no.10
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    • pp.526-531
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    • 2007
  • The sintering behavior and electrical property of $Ce_{0.8}Gd_{0.2}O_{1.9}$ ceramics were investigated with the iron oxide concentration ranging from 0 to 5 mol%. Both the sintered density and grain size were found to increase up to 2 mol% $Fe_2O_3$, and then to decrease with further additions. At a higher $Fe_2O_3$ content above 3 mol%, grain size decreased by a pinning effect induced by different shape grains. The electrical conductivity was also increased with increasing $Fe_2O_3$ content up to 2 mol%. Total conductivity of 2 mol% $Fe_2O_3-added$ specimen showed the maximum conductivity of $2{\times}10^{-2}{\Omega}{\cdot}cm^{-1}$ at $500^{\circ}C$. The addition of $Fe_2O_3$ was found to promote the sintering properties and electrical conductivities of $Gd_2O_3-dope\;CeO_2$.

Effects of Al Doping on Sinterabllity and Microstructure in $UO_2-6wt%Gd_2O_3$ Pellets ($UO_2-6wt%Gd_2O_3$ 소결체에서 Al 첨가가 소결성 및 미세조직에 미치는 영향)

  • Baek, Jong-Hyeok;Yu, Ho-Sik;Yun, Gyeong-Ho;Kim, Hyeong-Su;Seo, Geum-Seok
    • Korean Journal of Materials Research
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    • v.5 no.6
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    • pp.644-649
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    • 1995
  • The sinterability and the microstructure of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets, which were doped using Al(OH)$_3$, ADS(aluminium distearate), Al(OH)$_3$+ ADS mixture and sintered at 1$700^{\circ}C$ for 4h in H$_2$, atmospheres, were examined. The sintered densities of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets were more than 94% T.D.. The open porosity in ADS doped pellets was dramatically decreased. And the amounts of pores less than l${\mu}{\textrm}{m}$ and larger than 10${\mu}{\textrm}{m}$ were decreased regardless of the kinds of doped Al compounds. And the average pore size of Al doped UO$_2$-6wt%Gd$_2$O$_3$pellets was ranged between 2 and 3${\mu}{\textrm}{m}$. While grain structure of non-doped UO$_2$-6wt%Gd$_2$O$_3$pellets was revealed to be duplex type (rocks in sands), that of Al doped pellets to be uniformly equiaxid type. Especially, the grain size in ADS doped pellets was averaged to 4.6${\mu}{\textrm}{m}$.

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DFabrication of $GdAlO_3$ Buffer Layers by Sol-Gel Processing (졸-겔법에 의한 $GdAlO_3$ 버퍼층의 제조)

  • Bang, Jae-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.5
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    • pp.801-804
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    • 2006
  • [ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

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