• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.323-328
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• 2004

Down-conversion of Eu$^{3+}$ doped LiGdF$_4$ (LGF) for increasing the cell efficiency on dye-sensitized Ti $O_2$ solar cells has been studied. The dye sensitized solar cell (DSC) consisting of mesoporous Ti $O_2$ electrode deposited on transparent substrate, an electrolyte containing I$^{[-10]}$ /I$_3$$^{[-10]}$ redox couple, and Pt counter electrode is a promising alternative to the inorganic solar cell. The structure of DSC is basically a sandwich type, viz., FTO glass/Ru-red dye-absorbed Ti $O_2$/iodine electrolyte/sputtered Pt/FTO glass. The cell without down converter had open circuit potential of approximately 0.66 Volt, the short circuit photocurrent density of 1.632 mA/$\textrm{cm}^2$, and fill factor of about 50 ％ at the excitation wavelength of 550 nm. In addition, 5.6 mW/$\textrm{cm}^2$ incident light intensity beam was used as a light source. From this result, the calculated monochromatic efficiency at the wavelength of 550 nm of this cell was about 9.62 ％. The incident photon to current conversion efficiency (IPCE) of N3 used as a dye in this work is about 80 ％ at around 590 nm and 610 nm, which is the emission spectrum of Eu$^{3+}$ doped LGF, results in efficiency increasing of DSC.C.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2454-2463
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• 2021

The objective of this research is to the use of americium (AmO₂) as a burnable absorber effectively instead of conventional gadolinium (Gd₂O₃) for VVER-1200 reactor by analyzing its impacts on reactivity, power peaking factor (PPF), safety factor, and quality of the spent fuel. The assembly is burned to 60 GWd/t by using SRAC-2006 code and JENDL-4.0 data library for finding the optimum amount and effective way of using AmO₂ as a burnable absorber. From these studies, it is found that AmO₂ can decrease the excess reactivity like Gd₂O₃ without changing the criticality life span and enrichment of ²³⁵U. A homogeneous mixture of the 0.20% AmO₂+ 4.95% enriched UO₂ fuel rod (model MF-4) decreases the PPF than the reference assembly. The use of AmO₂+UO₂ in the integral burnable absorber (IBA) rod or the outer layer could also decrease the PPF up to 10 GWd/t but increases rapidly after 30 GWd/t, which could be a safety threat. The fuel temperature coefficient and void coefficient of the model MF-4 are the same as the reference assembly. In addition, 22% of initially loaded Am are burning effectively and contributing to the power production.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.481-482
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• 2006

플라즈마 화상표시기 (PDP)의 보호막 물질로 사용 중인 다결정 MgO의 특성을 개선하기 위하여 본 연구에서는 MgO에 희토류계 원소를 치환하여 제조하였으며, 치환량에 따른 MgO 보호막의 광학적 특성과 전기적 특성을 고찰하였다. MgO + 100 ppm $Gd_2O_3$조성으로 제작한 MgO 박막의 이차전자 방출계수 값이 순수 MgO 보다 35% 높게 나타났다. $Gd_2O_3$ dopant가 100 ppm 첨가시까지 밀도가 증가하였으나, 그 이상 첨가시 감소하는 경향을 나타냈다. 가속전압 200 V에서 이차전자 방출계수는 0.138 이었고 표면거칠기는 5.77 nm 이었으며 투과율은 550 nm 에서 95.76% 이었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1091-1094
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• 2004

High-luminous efficiency full-color emissions in photoluminescence (PL) were obtained in $GdVO_4$ phosphor thin films co-doped with various amounts of Eu, Er and/or Tm and postannealed at approximately 1000$^{\circ}C$. The $GdVO_4$:Eu,Er,Tm phosphor thin films were deposited on thick $BaTiO_3$ ceramic sheets by r.f. magnetron sputtering using powder targets and postannealed in an air atmosphere. The rare earth (RE) content (RE/(Gd+V+RE) atomic ratio) in the oxide phosphor thin films was varied in the range from 0.1 to 2 at.%. It was found that the excitation of $GdVO_4$:Eu.Er,Tm thin films is attributed to band-to-band transition. A white PL emission was obtained in a $GdVO_4$:Eu,Er,Tm thin film with Eu, Er and Tm contents of 0.2, 0.7 and 1 at.%, respectively: CIE chromaticity color coordinates. (X=0.352 and Y=0.351). In addition, a white emission was obtained in a thin-film electroluminescent (TFEL) device made with this thin film.

• Korean Journal of Materials Research
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• v.18 no.3
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• pp.159-162
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• 2008

$Eu^{3+}$-activated $R_3GaO_6$ (R = Y, Gd) phosphors were prepared in a conventional solid-state reaction and their optical properties were investigated. These compounds exhibit strong red emission under light excitation at 254 nm. The emission spectra are dominated by peaks appearing around 610-630 nm that are induced by the electric dipole transition of $^5D_0\;{\rightarrow}\;^7F_2$ of $Eu^{3+}$. In addition, the appropriate CIE (Commission Internationale de l'clairage) chromaticity coordinates, (x = 0.656, y = 0.336) for $Y_3GaO_6$ and (x = 0.655, y = 0.334) for $Gd_3GaO_6$, become closer to the NTSC (National Television System Committee) standard values. With the optimized activator concentrations, the maximum emission brightness is approximately 80% of $Y_2O_3$:$Eu^{3+}$ typical red-emitting phosphor with improved color purity under an excitation condition of 254 nm.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.413-421
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• 2017

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped $CeO_2$ (GDC); erbia stabilized $Bi_2O_3$ (ESB); Zr doped erbia stabilized $Bi_2O_3$ (ZESB); Ca doped erbia stabilized $Bi_2O_3$ (CESB) in the temperature range of 250 to $600^{\circ}C$ using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these materials exhibit a single arc at low temperature. This means that there is no space charge effect on ${\delta}-Bi_2O_3$. In addition, impedance data were analyzed by using the brick layer model. We indirectly demonstrate that grain boundary ionic conductivity is similar to or even higher than bulk ionic conductivity on cubic bismuth oxide.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.201-206
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• 2009

In this study, we have fabricated a fiber-optic radiation sensor for detection of tritium using inorganic scintillators and optical fibers. We have tested various kinds of inorganic scintillators such as $Gd_2O_2S$ : Tb, $Y_3Al_5O_{12}$ : Ce, and CsI : Tl to select the most effective sensor tip. In addition, we have measured the scintillating lights using a photomultiplier tube as a function of distance between sensor tips to the source with the different activities of hydride tritium. The final results are compared with those which are obtained using a surface activity monitor.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.372-377
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• 2018

MgO or gadolinium-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{2-{\delta}}$) was added as a promoter to improve the oxygen transfer kinetics of $MgMnO_3$ oxygen carrier material for chemical looping combustion. Neither MgO nor GDC reacted with $MgMnO_3$, even at the high temperature of $1100^{\circ}C$. The average oxygen transfer capacities of $MgMnO_3$, 5 wt% $MgO-MgMnO_3$, and 5 wt% $GDC-MgMnO_3$ were 8.74, 8.35, and 8.13 wt%, respectively. Although the addition of MgO or GDC decreased the oxygen transfer capacity, no further degradation was observed during their use in 5 redox cycles. The addition of GDC significantly improved the conversion rate for the reduction reaction of $MgMnO_3$ compared to the use of MgO due to an increase in the surface adsorption process of $CH_4$ via oxygen vacancies formed on the surface of GDC. On the other hand, the conversion rates for the oxidation reaction followed the order 5 wt% $GDC-MgMnO_3$ > 5 wt% $MgO-MgMnO_3$ >> $MgMnO_3$ due to morphological change. MgO or GDC particles suppressed the grain growth of the reduced $MgMnO_3$ (i.e., (Mg,Mn)O) and increased the specific surface area, thereby increasing the number of active reaction sites.

• Molecules and Cells
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• v.27 no.1
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• pp.113-118
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• 2009

In this study, we have shown the transcriptional regulation of the human GD3 synthase (hST8Sia I) induced by valproic acid (VPA) in human neuroblastoma SK-N-BE(2)-C cells. To elucidate the mechanism underlying the regulation of hST8Sia I gene expression in VPA-stimulated SK-N-BE(2)-C cells, we characterized the promoter region of the hST8Sia I gene. Functional analysis of the 5'-flanking region of the hST8Sia I gene by the transient expression method showed that the -1146 to -646 region, which contains putative binding sites for transcription factors c-Ets-1, CREB, AP-1 and NF-${\kappa}B$, functions as the VPA-inducible promoter of hST8Sia I in SK-N-BE(2)-C cells. Site-directed mutagenesis and electrophoretic mobility shift assay indicated that the NF-${\kappa}B$ binding site at -731 to -722 was crucial for the VPA-induced expression of hST8Sia I in SK-N-BE(2)-C cells. In addition, the transcriptional activity of hST8Sia I induced by VPA in SK-N-BE(2)-C cells was strongly inhibited by SP600125, which is a c-Jun N-terminal kinase (JNK) inhibitor, and $G{\ddot{O}}6976$, which is a protein kinase C (PKC) inhibitor, as determined by RT-PCR (reverse transcription-polymerase chain reaction) and luciferase assays. These results suggest that VPA markedly modulated transcriptional regulation of hST8Sia I gene expression through PKC/JNK signal pathways in SK-N-BE(2)-C cells.