• Title/Summary/Keyword: $F^+-H^+$

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Expression of Sodium/iodide Symporter Transgene in Neural Stem Cells (신경줄기세포(HB1.F3)에서 나트륨옥소 공동수송체 도입유전자 발현)

  • Kim, Yun-Hui;Lee, Dong-Soo;Kang, Joo-Hyun;Lee, Yong-Jin;Chung, June-Key;Lee, Myung-Chul
    • The Korean Journal of Nuclear Medicine
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    • v.38 no.1
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    • pp.99-108
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    • 2004
  • Purpose: The ability to noninvasively track the migration of neural progenitor cells would have significant clinical and research implications. We generated stably transfected F3 human neural progenitor cells with human sodium/iodide symporter (hNIS) for noninvasively tracking F3. In this study, the expression patterns of hNIS gene in F3-NIS were examined according to the cultured time and the epigenetic modulation. Materials and Methods: F3 human neural stem cells had been obtained from Dr. Seung U. Kim (Ajou University, Suwon, Korea). hNIS and hygromycin resistance gene were linked with IRES (Internal Ribosome Entry Site) under control of CMV promoter. This construct was transfected to F3 with Liposome. To investigate the restoration of hNIS gene expression in F3-NIS, cells were treated with demethylating agent (5-Azacytidine) and Histone deacetylase inhibitor (Trichostatin A: TSA). The expression of hNIS was measured by I-125 uptake assay and RT-PCR analysis. Results: The iodide uptake of the F3-NIS was higher 12.86 times than F3 cell line. According to the cell passage number, hNIS expression in F3-NIS gradually diminished. After treatment of 5-Azacytidine and TSA with serial doses (up to $20{\mu}M$, up to 62.5nM, respectively) for 24 hours, I-125 uptake and mRNA of hNIS in F3-NIS were increased. Conclusion: These results suggest that hNIS transfected F3 might undergo a change in its biological characters by cell passage. Therefore, the gene ex[ressopm of exogenous gene transferred human stem cell might be affected to the epigenetic modulation such as promoter methylation and Histone deacetylation and to the cell culture conditions.

ON THE SUPERSTABILITY OF SOME FUNCTIONAL INEQUALITIES WITH THE UNBOUNDED CAUCHY DIFFERENCE (x+y)-f(x)f(y)

  • Jung, Soon-Mo
    • Communications of the Korean Mathematical Society
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    • v.12 no.2
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    • pp.287-291
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    • 1997
  • Assume $H_i : R_+ \times R_+ \to R_+ (i = 1, 2)$ are monotonically increasing (in both variables), homogeneous mapping for which $H_1(tu, tv) = t^p(H_1(u, v) (p > 0)$ and $H_2(u, v)^{t^q} (q \leq 1)$ hold for $t, u, v \geq 0$. Using an idea from the paper of Baker, Lawrence and Zorzitto [2], the superstability problems of the functional inequalities $\Vert f(x+y) - f(x)f(y) \Vert \leq H_i (\Vert x \Vert, \Vert y \Vert)$ shall be investigated.

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An Analysis of Light-Induced Degradation of PECVD a-Si Films Using $SiF_4$ ($SiF_4$를 이용하여 증착한 PECVD 박막의 빛에 의한 열화도 특성 분석)

  • Jang, K.H.;Choi, H.S.;Han, M.K.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1019-1021
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    • 1995
  • Light induced degradation of hydrogenated amorphous silicon(a-Si:H) are related to the number of weak dangling bonds which are thought to be responsible for the Staebler-Wronski effects, and caused the many photoelectric problems in applications of thin film transistors and solar cell, etc. In this paper, we deposited fluorinated amorphous silicon films(a-Si:H;F) with $SiH_4$ and $SiF_4$ gas mixture and investigated the effects of fluorine atoms on the evoluations of the crystallinity and improvements of light instability. We have found that micro-crystallinity produced in a-SI:H;F films and marked maximum value of 22% at the flow rate of $SiH_4:SiF_4$=2:10 sccm by UV spectrophotometer measurement, while n-Si:H film deposited with only $SiH_4$ gas showed no crystallinity. Light-induced degradation property of a-Si:H;F films is also improved which is mainly due to the etching effects of fluorine atoms on the weak Si-Si bonds and unstable hydrogen bonds. It is considered that involving fluorine atoms in a-Si:H films may contribute to the suppression of light-induced degradation and evolution of micro-crystallinity.

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A relative mod (H, K) nielsen number

  • Cho, Hyang-Kam;Woo, Moo-Ha
    • Journal of the Korean Mathematical Society
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    • v.32 no.3
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    • pp.371-387
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    • 1995
  • Let X be a compact polyhedron, H a normal subgroup of the fundamental group $\pi_1(X)$ of X and $f : X \longrightarrow X$ a selfmap such that $f_piH \subset H$, where f_\pi : \pi_1(X) \longrightarrow \pi_1(X)$ is the induced homomorphism by f.

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RANDOMLY ORTHOGONAL FACTORIZATIONS OF (0,mf - (m - 1)r)-GRAPHS

  • Zhou, Sizhong;Zong, Minggang
    • Journal of the Korean Mathematical Society
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    • v.45 no.6
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    • pp.1613-1622
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    • 2008
  • Let G be a graph with vertex set V(G) and edge set E(G), and let g, f be two nonnegative integer-valued functions defined on V(G) such that $g(x)\;{\leq}\;f(x)$ for every vertex x of V(G). We use $d_G(x)$ to denote the degree of a vertex x of G. A (g, f)-factor of G is a spanning subgraph F of G such that $g(x)\;{\leq}\;d_F(x)\;{\leq}\;f(x)$ for every vertex x of V(F). In particular, G is called a (g, f)-graph if G itself is a (g, f)-factor. A (g, f)-factorization of G is a partition of E(G) into edge-disjoint (g, f)-factors. Let F = {$F_1$, $F_2$, ..., $F_m$} be a factorization of G and H be a subgraph of G with mr edges. If $F_i$, $1\;{\leq}\;i\;{\leq}\;m$, has exactly r edges in common with H, we say that F is r-orthogonal to H. If for any partition {$A_1$, $A_2$, ..., $A_m$} of E(H) with $|A_i|=r$ there is a (g, f)-factorization F = {$F_1$, $F_2$, ..., $F_m$} of G such that $A_i\;{\subseteq}E(F_i)$, $1\;{\leq}\;i\;{\leq}\;m$, then we say that G has (g, f)-factorizations randomly r-orthogonal to H. In this paper it is proved that every (0, mf - (m - 1)r)-graph has (0, f)-factorizations randomly r-orthogonal to any given subgraph with mr edges if $f(x)\;{\geq}\;3r\;-\;1$ for any $x\;{\in}\;V(G)$.

Theoretical Studies on the Alkylidene Silylenoid H2C = SiLiF and Its Insertion Reaction with R-H (R = F, OH, NH2)

  • Tan, Xiaojun;Wang, Weihua;Li, Ping;Li, Qingyan;Cheng, Lei;Wang, Shufen;Cai, Weiwang;Xing, Jinping
    • Bulletin of the Korean Chemical Society
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    • v.31 no.5
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    • pp.1349-1354
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    • 2010
  • The geometries and isomerization of the alkylidene silylenoid $H_2C$ = SiLiF as well as its insertion reactions with R-H (R = F, OH, $NH_2$) have been systematically investigated at the B3LYP/6-311+$G^*$ level of theory. The potential barriers of the three insertion reactions are 97.5, 103.3, and 126.1 kJ/mol, respectively. Here, all the mechanisms of the three reactions are identical to each other, i.e., an intermediate has been formed first during the insertion reaction. Then, the intermediate could dissociate into the substituted silylene ($H_2C$ = SiHR) and LiF with a barrier corresponding to their respective dissociation energies. Correspondingly, the reaction energies for the three reactions are -36.4, -24.3, and 3.7 kJ/mol, respectively. Compared with the insertion reaction of $H_2C$ = Si: and R-H (R = F, OH and $NH_2$), the introduction of LiF makes the insertion reaction occur more easily. Furthermore, the effects of halogen (F, Cl, Br) substitution and inorganic salts employed on the reaction activity have also been discussed. As a result, the relative reactivity among the three insertion reactions should be as follows: H-F > H-OH > H-$NH_2$.

The Effects of CIF$_3$and F$_2$on the Flammability Limit of H$_2$ (H$_2$의 연소한계에 미치는 F$_2$와 CIF$_3$의 영향)

  • ;H.Ohtani;Y.Uehara
    • Journal of the Korean Society of Safety
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    • v.9 no.3
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    • pp.53-59
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    • 1994
  • Hydrogen(H$_2$) is used in the semiconductor industries, and some oxidizing gases such as fluoride(F$_2$) and chlorine trifluoride(CIF$_3$) are also used. As F$_2$and CIF$_3$are highly oxidizing gases, it were supposed to react vigorously with H$_2$. In this study, the flammability limit of F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar mixtures were investigated experimentally. As a result, it was found that the diluted F$_2$gas could be spontaneously ignited as compared to CIF$_3$mixture gas while being mixed with the diluted H$_2$gas. However, CIF$_3$diluted gas was not able to ignite spontaneously except for an electric spark. And the combustion characteristics and reaction kinetics were shown at the different diluted gases by the flammability diagram analyses between the F$_2$/$H_2$/Ar and CIF$_3$/$H_2$/Ar.

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Improved Structural Identification Method in Frequency Domain (구조물의 동특성추정을 위한 개선된 주파수영역 기법)

  • Hong, Kyu Seon;Yun, Chung Bang
    • KSCE Journal of Civil and Environmental Engineering Research
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    • v.13 no.2
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    • pp.1-10
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    • 1993
  • Frequency response functions(FRF) are the most fundamental data for the frequency domain identifications of structural systems. In this paper, an improved method for estimating FRF's is presented. The new FRF estimator takes the weighted average of two conventional estimators, $H_1$(f) and $H_2$(f), utilizing the fact that $H_2$(f) gives more accurate estimate at resonance, while $H_1$(f) yields better results at antiresonances. Based on the estimated FRF's, the modal parameters of the structures, such as, natural frequencies, damping ratios and mode shapes, are also estimated. The effectiveness of the proposed method is investigated through numerical and experimental studies. The estimated results indicate that the proposed estimator gives more accurate results than other estimators.

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Extraction of Aluminum from Coal Fly Ash with Sulfuric Acid and Calcium Fluoride (석탄 비산회로부터 황산과 $CaF_2$에 의한 알루미늄의 추출)

  • 구현정;이재천;윤인주;정진기;임남웅
    • Resources Recycling
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    • v.6 no.1
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    • pp.11-16
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    • 1997
  • The extraction of aluminum from coal fly nsh wa studied using H,SO, and CaF, as leachants Aluminum was effectively extracted by HF formed &om the reaction of H,SO, and CaF, which decomposed the mullite in fly ash. The cffeas of H,SO' and CaFi concentration, reaction temperature, and reacliou time on aluminum extraction were investigated. 97% of aluminum was extracted by 4 M H:SO, and 0.5 M CaF, at 106$^{\circ}$C for 10 houci.

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H-V -SUPER MAGIC DECOMPOSITION OF COMPLETE BIPARTITE GRAPHS

  • KUMAR, SOLOMON STALIN;MARIMUTHU, GURUSAMY THEVAR
    • Communications of the Korean Mathematical Society
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    • v.30 no.3
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    • pp.313-325
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    • 2015
  • An H-magic labeling in a H-decomposable graph G is a bijection $f:V(G){\cup}E(G){\rightarrow}\{1,2,{\cdots},p+q\}$ such that for every copy H in the decomposition, $\sum{_{{\upsilon}{\in}V(H)}}\;f(v)+\sum{_{e{\in}E(H)}}\;f(e)$ is constant. f is said to be H-V -super magic if f(V(G))={1,2,...,p}. In this paper, we prove that complete bipartite graphs $K_{n,n}$ are H-V -super magic decomposable where $$H{\sim_=}K_{1,n}$$ with $n{\geq}1$.