• Journal of the Korean Magnetics Society
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• v.3 no.2
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• pp.130-134
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• 1993

The magnetic properties of the amorphous $Fe_{73.5-X}Co_{X}Cu_{1}Nb_{3}Si_{13.5}B_{9}(x=2,\;4)$ alloys, fabricated by a single roll rapid quenching technique and annealed at $400~650^{\circ}C$, have been investigated. The optimum annealing temperature is $550^{\circ}C$ for the amorphous $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy. The properties of the nanocrystalline $Fe_{71.5}Co_{2}Cu_{1}Nb_{3}Si_{13.5}B_{9}$ alloy show the relative permeability of $1.1{\times}10^{4}$ and the coercive force of 0.22 Oe at 1 kHz. When annealed at $600^{\circ}C$, the nanocrystalline $Fe_{69.5}Co_{4}Cu_{1}Nb_{3}Si_{13.5)B_{9}$ alloy shows the relative permeability of $1.0{\times}10^{4}$ and the coercive force of 0.19 Oe at 1 kHz. From the X-ray measurement, it is found that the remarkably improved soft magnetic properties are the effect of the formation of $\alpha$-Fe(Si) grain. By the results of FMR exper-imeIlt, the optimum annealing condition is just below temperature which the peak-to-peak line width of FMR spectrum increase rapidly.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.955-962
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• 2002

The microstructure change of brazed $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer were examined to clarify the effects of brazing process conditions such as brazing time and temperature on the mechanical properties and reliability of brazed joints. For the brazed joint above 900${\circ}C$, the Cu buffer layer was completely dissolved into brazing alloy and the thickness of reaction product formed at $Si_3N_4$/brazing alloy joint interface was abruptly increased, which could increase the amounts of residual stress developed in the joint. The fracture strength of brazed $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer at 950${\circ}C$ was much reduced comparing to those of joints brazed at the lower temperature. But, it was found that the effects of brazing time was not critical on the mechanical properties as well as the reliability of $Si_3N_4$/Stainless steel 316 joint with Cu buffer layer brazed at the temperature below 900${\circ}C$.

• Journal of Korea Foundry Society
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• v.5 no.3
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• pp.19-26
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• 1985

This study has been carried out to examine into wettability of Cu-5%Sn alloy in $Al_2O_3$, MgO, $SiO_2$ and graphite, respectively and investigated into the change in macrostructure of Cu-5%Sn alloy according to kind and mixing rate of mold-coating. The results obtained from the experiment are summerized as follows; 1. Cu Cu-5%Sn alloy, wettabilities of $Al_2O_3$ and MgO were good, on the other hand, wettabilities of $SiO_2$ and graphite were bad. 2. The fine equiaxed zone was created because of the role of $Al_2O_3$ and MgO as preferential nucleation sites. 3. Notwithstanding change of mixing rate of $SiO_2$ in mold coating the equixed zone was not created. 4. The area of equiaxed zone was varied according to mixing rate in the case of using $Al_2O_3$ and MgO in mold-coating.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Korean Journal of Materials Research
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• v.5 no.2
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• pp.169-177
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• 1995

The diffusion barrier property of 100-nm-thick titanium nitride (TiN) film between Cu and Si was investigated using sheet resistance measurements, etch-pit observation, x-ray diffractometry, Auger electron spectroscopy, and transmission electron microscopy. The TiN barrier fails due to the formation of crystalline defects (dislocations) and precipitates (presumably Cu-silicides) in the Si substrate which result from the predominant in-diffusion of Cu through the TiN layer. In contrast with the case of Al, it is identified that the TiN barrier fails only the in-diffusion of Cu because there is no indication of Si pits in the Si substrate. In addition, it appears that the stuffing of TiN does not improve the diffusion barrier property in the Cu/TiN/Si structure. This indicates that in the case of Al, the chemical effect that impedes the diffusion of Al by the reaction of Al with $TiO_{2}$ which is present in the grain boundaries of TIN is very improtant. On the while, in the case of Cu, there is no chemical effect because Cu oxides, such as $Cu_{2}O$ or CuO, is thermodynamically unstable in comparison with $TiO_{2}$. For this reason, it is considered that the effect of stuffing of TiN on the diffusion barrier property is not significant in the Cu/ TiN/Si structure.

• Journal of the Korean Vacuum Society
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• v.3 no.1
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• pp.59-64
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• 1994

극소전자 디바이스의 고집적화와 더불어 박막배선의 선폭은 0.5$\mu$m이하까지 축소되며 초고집적 submicron 박막금속화가 진행되고 있다. 미세회로에 적용되어지는 배선재료는 인가되는 고전류밀도로 인하여 electromigration 에 의한 결함이 쉽게 발생한다는 단점이있다. 금속박막 전도체위의 dielectric overlayer는 electromigration 에 대한 passivation 효과를 보여 극소전자 디바이스의 평균수명을 향상시 킨다.본 연구에서는 박막금속화에서 dielectric overlayer의 passivation 효과를 알아보기 위하여 약 3000 $\AA$ 두께의 Al,Al-1%Si, Ag 그리고 Cu 박막배선위에 증착하여 SiO2절연보호막의 유무에 따른 박막배선 의 수명변화 및 신뢰도를 측정하였다. 박막배선에 인가된 전류밀도는 1x106 A/cm2와 1x107 A/cm2 이었다. SiO2 dielectric overlayer는 Al,Al-1%Si Ag. Cu 박막배선에서는 electromigration에 대한 보호막 혀과를 보이며 평균수명을 모두 향상시킨다. SiO2 passivation 효과는 Al, Ag, Cu 박막중 Cu 박막배선에서 가 장 크게 나타났다. SiO2 dielectric overlayer가 형성되지 않은 경우 Al 박막배선의 수명이 가장 긴 것으 로 나타났으나 SiO2 가 형성된 경우는 Cu 박막배선의 수명이 가장 길게 나타났다.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.415-422
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• 1986

The metal-support interaction of copper oxide supported on ${\gamma}$-alumina and silica was studied by X-ray diffraction (XRD) and temperature-programmed reduction(TPR). It was found that XRD pattern of CuO can not be observed up to 5.0wt % copper content for CuO/${\gamma}-Al_2O_3$ while CuO/$SiO_2$ sample shows the CuO pattern even at 2.5wt% copper content. $H_2-$TPR of CuO/${\gamma}-Al_2O_3$ system shows four major peaks at 145${\circ}C$, 185${\circ}C$, 210${\circ}C$, and 250${\circ}C$. In the case of CuO/$SiO_2$, a large peak at 250${\circ}C$ was appeared accompanying a small peak at 425${\circ}C$. Comparing the TPR peaks with that of copper aluminate which was prepared from the calcination of CuO/${\gamma}-Al_2O_3$ at 1000${\circ}C$, the peaks at around 145${\circ}C$, 200${\circ}C$ (185${\circ}C$ and 210${\circ}C$), and 250${\circ}C$ were corresponded to $Cu^+$ ion in CuO interacting ${\gamma}-Al_2O_3$, $Cu^+$ ions in defect sites of ${\gamma}-Al_2O_3$ and $Cu^{2+}$ ion in the bulk CuO layer, respectively. From the results, it was concluded that there is considerable metal-support interaction in CuO on ${\gamma}-Al_2O_3$ and the interaction results in a stabilization of $Cu^+$ ion in the system.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.835-842
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• 1999

Si3N4 -Si3N4 joints were made using Ag-Cu-Ti and Ag-Cu-In-Ti via brazing method and the change in joint strength was investigated after heat treatment at $400^{\circ}C$ or $650^{\circ}C$ for up to 2000h. The initial strength of as-brazed joints with Ag-Cu-In-Ti was lower but the reduction of the strength was less dramatic than that with Ag-Cu-Ti. The joints made of a new brazing alloy Au-Ni-Cr-Mo-Fe which is developed for high temperature applications were heat-treated at $650^{\circ}C$ for 1000h. As the heat treatment time increased the bond strength increased. The results of the joining system with Mo or Cu interlayer showed that the strength of the joint with Mo interlayer was higher but the system incurred problems in joint production Also it was found from oxidation experiment that Ti and In affected the oxidation resistance of brazing alloy.

• Journal of Korea Foundry Society
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• v.15 no.3
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• pp.262-271
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• 1995

It is well known what is impossible to refine primary and eutectic Si simultaneously by addition of both Cu-P and Sr(or Na). Because of the formation of compound $Sr_3P_2(or Na_3P)$ in the melt, in the result, both effects disappear. In this study Al-Cu-P alloy that comprises AlP compounds inside is added in the melt with Sr simultaneously. As AlP compounds that act on nucleation sites of primary Si are not formed but added directly an the melt, it is difficult to form $Sr_3P_2$ by reaction with Sr. Therefore it is possible to refine primary and eutectic Si simultaneously in the general casting process by use of Al-Cu-P alloy and Sr.