• Proceedings of the Materials Research Society of Korea Conference
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• 2002.11a
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• pp.150-150
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• 2002

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.142-143
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• 2005

• Transactions of the Korean hydrogen and new energy society
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• v.23 no.4
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• pp.353-363
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• 2012

The relationship between the diffusivity and electrochemical characteristics of lithium secondary battery with the modified Si anode material prepared in HF/$AgNO_3$ solution was investigated. The crystallographic structure and images of the modified porous Si and modified Si/Cu was examined using the X-ray diffraction, BET and SEM. To examine the effect of metal composite and pore size distribution according to chemical etching on the electrochemical characterization, the electrodes for half cells were prepared with the modified Si, modified Si/Cu, and modified Si/Cu annealed with $600^{\circ}C$. Our results showed that the chemical diffusivity of lithium ions was related to structure and resistance of Si/Cu composite anode material. The lithium diffusivity in modified silicon compound calculated from the CV was at the range of $1{\times}10^{-12}$ to $9{\times}10^{-16}cm^2/s$. The effects of modified silicon structure and resistance on the cycling efficiency were significant.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.877-887
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• 1994

Cu-Ni-Si-P alloys have been studied in order to develop connector material which has a favorable combination of strength, electrical conductivity, elastic limit, thermal softening resistence and bend formability. Three kinds of trial alloys with various nickel and silicon content were melted and cast, hot rolled at about $900^{\circ}C$ and cold rolled. Mechanical properties and electrical conductivities of these alloys annealed at $450^{\circ}C$, $500^{\circ}C$ and $550^{\circ}C$ were investigated. An alloy with the composition of Cu-2.7%Ni-0.53%Si-O.O29%P, which shows a favorable combination of high strength and high electrical conductivity, has been developed. Various characteristics of the alloy 1 connector material were evaluated and compared with phospher bronze(C521OR-H) and brass(C26OOR-EH) connector material.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.1-8
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• 2022

High-density packaging technologies, including Through-Si-Via (TSV) technologies, are considered important in many fields such as IoT (internet of things), 6G/5G (generation) communication, and high-performance computing (HPC). Achieving high integration in two dimensional packaging has confronted with physical limitations, and hence various studies have been performed for the three-dimensional (3D) packaging technologies. In this review, we described about the causes and effects of scallop formation in TSV, the scallop-free etching technique for creating smooth sidewalls, Cu pillar and Cu-SiO₂ hybrid bonding in TSV. These technologies are expected to have effects on the formation of high-quality TSVs and the development of 3D packaging technologies.

• Transactions of the Korean hydrogen and new energy society
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• v.33 no.1
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• pp.105-112
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• 2022

Copper (Cu)-based catalysts have been widely used in a methanol steam reforming (MSR) reaction for hydrogen production for air-independent propulsion (AIP) applications and their good catalytic activities have attracted much attention. However, the agglomeration of the catalytic active site Cu causes deteriorating the catalytic performance and suppression of Cu agglomeration is a crucial issue in the AIP applications that the MSR system is typically operated at 250-300℃ for a long time. R. Sakai et al. recently showed a computational study on the anchoring effect that reduces an agglomeration of active sites by doping in a supporter. In order to present the anchoring effect on 𝛾-Al₂O₃ supported Cu-based catalysts, in this study, the adsorption energies of Cu on X-doped (X=ruthenium, phosphorus, silicon) 𝛾-Al₂O₃ were calculated and Cu adsorption energy decreased due to a change of the electronic structure originated from doping, thereby proving the anchoring effect.

• Journal of Radiation Protection and Research
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• v.22 no.3
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• pp.135-141
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• 1997

The study of anneal characteristics is important for TL dosimeter to reuse. To obtain the annealing condition of the recently developed, new TL dosimeter, LiF:Mg,Cu,Na,Si Teflon Tills in a disk type (diameter 4.5 mm, thickness about $90mg/cm^2$), we studied for pre-irradiation annealing, readout procedure and post-readout annealing, in order. The gamma irradiations were carried out with a $^{60}Co$, dose of 0.1 Gy. We have used the method that observe the variation of thermoluminescent(TL) intensity of these Teflon TLDs over repeated cycles by changing both anneal temperature and anneal time with the TLD reader and the oven. There is a 5% loss in sensitivity over the ten repeated readouts by the annealing condition:pre-irradiation annealing at $80^{\circ}C$ for one hour, readout to $280^{\circ}C$ and post-readout annealing at $270^{\circ}C$ for 20 seconds.

• Journal of Welding and Joining
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• v.34 no.5
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• pp.70-76
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• 2016

In this study, Microstructure and tensile properties in arc brazed joints of 1000MPa grade DP steel using Cu-Si insert metal were investigated. The fusion zone was composed of Cu phase which solidified a little Fe and Si. The former phase formed due to dilute the edge of base material by arc, although Fe was not solid solution in Cu at the room temperature. Cu3Si particles formed by crystallization at $1100^{\circ}C$ during faster cooling. After the tensile shear test, there are no differences between the brazed joint efficiencies. The maximum joint efficient was about 37% compared to strength of base metal. It is better than that of arc brazed joint of DP steel using Cu-Sn filler metal. Fracture position of all brazing conditions was in the fusion zone. Crack initiation occurred at three junction point which was a stress singularity point of upper sheet, lower sheet and the fusion zone. And then crack propagated across the fusion zone. The reason why the fracture occurred at fusion zone was that the hardness of fusion zone was lower than that of base material and heat affected zone. The correlation among maximum load and hardness of fusion zone and EST at fractured position was $R^2=0.9338$. Therefore, this means that hardness and EST can have great impact on maximum load.

• Journal of the Korean institute of surface engineering
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• v.28 no.1
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• pp.3-13
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• 1995

Electroless Ni and Cu platings were conducted on $B_4C$ and SiC. In the electroless Ni plating, the deposition rate on $B_4C$ was higher than on SiC. However, the electroless Cu deposition occured with high deposition rate regardless of the carbide substrates used in this study. Uniformity of the deposits was better in the electroless Cu deposition than in the electroless Ni deposition. In the topographies of the electroless depositions, Ni deposits have grown as colony, whereas Cu deposits have grown as fine individual grains.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.