• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.698-702
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• 2005

Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2004.05a
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• pp.40-45
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• 2004

액상 TCE 제거반응을 위한 Hetero-CWO 촉매들 중에서 $CoO_{x}$/$TiO_2$와 $CuO_{x}$/$TiO_2$가 상대적으로 유망한 것으로 보여졌으며, 특히 5% $CoO_{x}$/$TiO_2$ 촉매의 경우에 반응시간에 따른 활성추이는 TCE 제거반응에서 주요 역할을 할 수 있는 반응 활성점의 변화를 암시하고 있다. $FeO_{x}$ /$TiO_2$와 Fe-MFI 촉매상에서 TCE 제거반응에 대한 시간에 따른 활성거동으로부터 활성점의 redox cycle를 어떻게 제어하는가 하는 점이 매우 중요함을 알 수 있었으며, 촉매표면에서 이를 유지.증진시킬 수 있는 촉매 디자인 기법이 요구되었다.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.740-742
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• 1998

In this paper, we described the effect of rapid thermal annealing on the electrical properties of interfacial layer between various top electrodes and $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films. BST thin films were fabricated on Pt/TiN/$SiO_2$/Si substrate by RF magnetron sputtering technique. AI, Ag, and Cu films for the formation of top electrode were deposited on BST thin films by thermal evaporator. Top electrodes/BST/Pt capacitor annealed with rapid thermal annealing at various temperature. In $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films with Cu top electrode annealed at $500^{\circ}C$, the dielectric constant was measured to the value of 366 at 1.2 [kHz] and the leakage current was obtained to the value of $5.85{\times}10^{-7}\;[A/cm^2}$ at the forward bias of 2 [V].

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.179-183
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• 2000

For a ground plane in high-temperature superconducting ramp-edge junction devices, YBa$_2$Cu$_3$O$_{7-{\delta}}$/SrTiO$_3$/YBa$_2$Cu$_3$O$_{7-{\delta}}$ multilayer structures were fabricated using pulsed laser deposition and ECR ion milling. Various process parameters were adjusted to enhance the device characteristics. By etching the STO layer to form a tapered edge of about 15$^{\circ}$ and in-situ RF plasma treatment of bottom YBCO surface prior to deposition of top YBCO, the top-to-bottom YBCO showed T$_c$ of 75${\sim}$80 K and I$_c$ of about 40 mA through holes. It was found that the deposition of bottom YBCO at a reduced laser repetition rate of 1Hz increased the T$_c$ of top YBCO to 79.9 K. The resistivity of 570 layer was about 10$^6$ ${\Omega}$cm at 60 K, which ensures good electrical isolation between successive YBCO layers.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.4
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• pp.368-375
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• 2006

Single and complex metal oxide catalysts supported onto a commercial DT51D $TiO_2$ have been investigated for gas-phase TCE oxidation in a continuous flow type fixed-bed reaction system to develop a better design approach to catalysts for this reaction. Among the $TiO_2$-supported single metal oxides used, i.e., $CrO_x,\;FeO_x,\;MnO_x,\;LaO_x,\;CoO_x,\;NiO_x,\;CeO_x\;and\;CuO_x$, with the respective metal contents of 5 wt.%, the $CrO_x/TiO_2$ catalyst was shown to be most active for the oxidative TCE decomposition, depending significantly on amounts of $CrO_x\;on\;TiO_2$. The use of high $CrO_x$ loadings greater than 10 wt.% caused lower activity in the catalytic TCE oxidation, which is probably due to production of $Cr_2O_3$ crystallites on the surface of $TiO_2$. $CrO_x/TiO_2$-supported $CrO_x$-based bimetallic oxide catalysts were of particular interest in removal efficiency for this TCE oxidation reaction at reaction temperatures above $200^{\circ}C$, compared to that obtained with $CrO_x$-free complex metal oxides and a 10 wt.% $CrO_x/TiO_2$ catalyst. Catalytic activity of 5 wt.% $CrO_x-5$ wt.% $LaO_x$ in the removal reaction was similar to or slightly higher than that acquired for the $CrO_x$-only catalyst. Similar observation was revealed for 5 wt.% $CrO_x$-based bimetallic oxides consisting of either 5 wt.% $MnO_x,\;CoO_x,\;NiO_x\;or\;FeO_x$. These results represent that such $CrO_x$-based bimetallic systems for the catalytic TCE oxidation on significantly minimize the usage of $CrO_x$ that is well known to be one of very toxic heavy metals, and offer a very useful technique to design new type catalysts for reducing chlorinated volatile organic substances.

• Journal of the Korean Ceramic Society
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• v.27 no.2
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• pp.249-255
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• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.194-194
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• 2008

Lead oxide based ceramics, represented by PZT, are the most widely used materials for piezoelectric actuators, sensors, and transducers due to their excellent piezoelectric properties. In particular, high-performance multilayered piezoelectric ceramics for advanced electronic components have drawn great attention. In order to develop piezoelectric ceramics capable of being sintered at low temperature for multilayer piezoelectric device applications, the effect of CuO additions on the microstructures and electromechanical properties of the 0.4Pb$(Mg_{1/3}Nb_{2/3})O_3-0.25PbZrO_3-0.35PbTiO_3$ ceramics was investigated. The samples with CuO addition were synthesized by ordinary sintering technique. X-ray diffractions indicated that all samples formed a single phase perovskite structure. The addition of CuO improved the sinterability of the samples and caused an increase in the density and grain size at low temperature. The optimum sintering temperature was lowered by CuO additions. Excellent piezoelectric and electromechanical responses, $d_{33}$ ~ 663 pC/N, $k_p$ ~ 0.72, were obtained for the samples of high density with 0.1 wt% CuO addition sintered at $1050^{\circ}C$ for 4 h in air. These results show that the piezoelectric properties of PMNZT ceramics can be improved by controlling the microstructure and this system is potentially a good candidate as multilayer piezoelectric device for a wide range of electro-mechanical transducer applications.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.37-41
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• 2012

The wafer level stacking with Cu-to-Cu bonding becomes an important technology for high density DRAM stacking, high performance logic stacking, or heterogeneous chip stacking. Cu CMP becomes one of key processes to be developed for optimized Cu bonding process. For the ultra low-k dielectrics used in the advanced logic applications, Ti barrier has been preferred due to its good compatibility with porous ultra low-K dielectrics. But since Ti is electrochemically reactive to Cu CMP slurries, it leads to a new challenge to Cu CMP. In this study Ti barrier/Cu interconnection structure has been investigated for the wafer level 3D integration. Cu CMP wafers have been fabricated by a damascene process and two types of slurry were compared. The slurry selectivity to $SiO_2$ and Ti and removal rate were measured. The effect of metal line width and metal density were evaluated.

• Journal of the Korean Applied Science and Technology
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• v.30 no.1
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• pp.49-56
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• 2013

Excellent electron transport properties with enhanced light scattering ability for light harvesting have made well-ordered one dimensional $TiO_2$ nanotube(TNT) arrays an alternative candidate over $TiO_2$ nanoparticles in the area of solar energy conversion applications. The principal drawback of TNT arrays being activated only by UV light has been addressed by coupling the TNT with secondary materials which are visible light-triggered. As well as extending the absorption region of sunlight, the introduction of these foreign components is also found to influence the charge separation and electron lifetime of TNT. In this study, a novel method to fabricate the TNT-based composite photoelectrodes employing visible responsive $CuInS_2$ (CIS) nanoparticles is presented. The developed method is a square wave pulse-assisted electrochemical deposition approach to wrap the inner and outer walls of a TNT array with CIS nanoparticles. Instead of coating as a dense compact layer of CIS by a conventional non-pulsed-electrochemical deposition method, the nanoparticles pack relatively loosely to form a rough surface which increases the surface area of the composite and results in a higher degree of light scattering within the tubular channels and hence a greater chance of absorption. The excellence coverage of CIS on the tubular $TiO_2$ allows the construction of an effective heterojunction that exhibits enhanced photoelectrochemical performance.