• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.646-651
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• 1998

The molecular structure of sulfur compounds and the retention relationship are studied by gas chromatography. Analyzed sulfur compounds are, hydrogen sulfide, sulfur dioxide, carbon disulfide, ethyl mercaptan, dimethyl sulfide, iso-propyl mercaptan, normal propyl mercaptan, ethyl methyl sulfide, tert-butyl mercaptan, tetrahydrothiophene, thiophene, and 2-chlorothiophene. Multiple linear regression explains the retention relationship of molecular descriptors. In GC the temperature program is 30$^{\circ}C$ held for 10.5 min, and then increased to 150$^{\circ}C$ at a rate 15$^{\circ}C$/min. Predicted equation for relative retention time (RRT) using SAS program is as follows; $RRT=0.121bp+14.39dp-8.94dp^2+0.0741sqmw-35.78\; (N=8,\; R^2=0.989, \;Variance=0.175,\;F=66.21)$. RRTs are function of boiling point, the square root of molecular weight, molecular dipole moment, and boiling point effects mostly on RRT. The RRT is maximized at the molecular dipole moment of 0.805D, when using nonpolar columns. The planar and highly symmetric compounds are eluted slowly. The square, of correlation coefficient $(R^2)$ using SAS program, is 0.989, and the variance is 0.175 in training sets. For three sulfur compounds, the variance between observed RRTs and predicted RRTs is 0.432 in testing sets.

• Journal of Environmental Science International
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• v.27 no.10
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• pp.809-820
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• 2018

DeNOx experiments for the effects of hydrocarbon additives on diesel SNCR process were conducted under oxidizing diesel exhaust conditions. A diesel-fueled combustion system was set up to simulate the actual cylinder and head, exhaust pipe and combustion products, where the reducing agent $NH_3$ and $C_2H_6/diesel$ fuel additives were separately or simultaneously injected into the exhaust pipe, used as the SNCR flow reactor. A wide range of air/fuel ratios (A/F=20~40) were maintained, based on engine speeds where an initial NOx level was 530 ppm and the molar ratios (${\beta}=NH_3/NOx$) ranged between 1.0~2.0, together with adjusting the amounts of hydrocarbon additives. Temperature windows were normally formed in the range of 1200~1350K, which were shifted downwards by 50~100K with injecting $C_2H_6/diesel$ fuel additives. About 50~68% NOx reduction was possible with the above molar ratios (${\beta}$) at the optimum flow #1 ($T_{in}=1260K$). Injecting a small amount of $C_2H_6$ or diesel fuel (${\gamma}=hydrocarbon/NOx$) gave the promising results, particularly in the lower exhaust temperatures, by contributing to the sufficient production of active radicals ($OH/O/HO_2/H$) for NOx reduction. Unfortunately, the addition of hydrocarbons increased the concentrations of byproducts such as CO, UHC, $N_2O$ and $NO_2$, and their emission levels are discussed. Among them, Injecting diesel fuel together with the primary reductant seems to be more encouraging for practical reason and could be suggested as an alternative SNCR DeNOx strategy under diesel exhaust systems, following further optimization of chemicals used for lower emission levels of byproducts.

• Asian-Australasian Journal of Animal Sciences
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• v.28 no.7
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• pp.999-1005
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• 2015

Bacillus-based feed additive was evaluated for its efficacy on growth performance, nutrient digestibility, fecal gas emission, and the consumption of time and amount of water for cleaning the pen of growing finishing pigs. A total of 120 growing pigs ($23.59{\pm}1.41kg$) were used in a 16-wk feeding trial. Pigs were randomly distributed into 1 of 2 treatments on the basis of body weight and sex. There were 12 replicate pens per treatment, with 5 pigs (3 barrows and 2 gilts) per pen. Dietary treatments were CON which was basal diet, and T1 which was CON+62.5 ppm microbial feed additive that provided $1.47{\times}10^8cfu$ of Bacillus organisms per gram of supplement. During the weeks 0 to 6, average daily gain (ADG) in T1 treatment was higher (p<0.05) than CON, but no improvement in average daily feed intake (ADFI) and feed efficiency (G:F) was noted. During 6 to 16 weeks, no difference (p>0.05) was noted in growth performance. However, ADG was improved (p<0.05) and overall ADFI tended (p = 0.06) to improve in T1 compared with CON. At week 6, the co-efficient of apparent total tract digestibility (CATTD) of dry matter (DM) nitrogen (N) was increased (p<0.05) in T1 compared with CON. Fecal $NH_3$ emission was decreased (p<0.05) in T1 compared with CON, at the end of 6th and 15th weeks. The time and water consumed for washing the pens were decreased (p<0.05) in T1 compared with CON. In conclusion, supplementation with Bacillus-based feed additive could improve the overall growth performances, increase the CATTD of DM and decrease the fecal $NH_3$ content and the time and water consumed in washing the pens for growing-finishing pigs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.933-938
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• 2002

(Ba,Sr)TiO$_{4}$ (BST) thin films on Pt/Ti/SiO$_{2}$/Si substrates were deposited by a sol-gel method and the etch characteristics of BST thin films have been investigated as a function of gas mixing ratio. The maximum etch rate of the BST films was 440 $AA$/min under such conditions as: CF$_{4}$(CF$_{4}$＋Ar) of 0.2, RF-power of 700 W, DC-bias voltage of -200 V, pressure of 15 mTorr and substrate temperature of 30 $^{circ}C$. The selectivities of BST to Pt, SiO$_{2}$ and PR were 0.38, 0.25 and 0.09, respectively. In the XPS (X-ray photoelectron spectroscopy) analysis, Barium (Ba) and Strontium (Sr) component in BST thin films formed low volatile compounds such as BaFx, SrFx, which are forms by the chemical reaction with F atoms and is removed by Ar ion bombardment. Titanium (Ti) is removed by chemical reaction such as TiF with ease. The result of secondary ion mass spectrometry (SIMS) analysis confirmed the existence of the BaFx, SrFK, TiFx.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.

• Korean Journal of Organic Agriculture
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• v.20 no.3
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• pp.327-343
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• 2012

In order to develop a high cellulolytic direct-fed microorganism (DFM) for ruminant productivity improvement, this study isolated cellulolytic bacteria from the rumen of Holstein dairy cows, and compared their cellulolytic abilities via DM degradability, gas production and cellulolytic enzyme activities. Twenty six bacteria were isolated from colonies grown in Dehority's artificial (DA) medium with 2% agar and cultured in DA medium containing filter paper at $39^{\circ}C$ for 24h. 16s rDNA gene sequencing of four strains from isolated bacteria showed that H8, H20 and H25 strains identified as Ruminococcus flavefaciens, and H23 strain identified as Fibrobacter succinogenes. H20 strain had higher degradability of filter paper compared with others during the incubation. H8 (R. flavefaciens), H20 (R. flavefaciens), H23 (F. succinogenes), H25 (R. flavefaciens) and RF (R. flavefaciens sijpesteijn, ATCC 19208) were cultured in DA medium with filter paper as a single carbon source for 0, 1, 2, 3, 4 and 6 days without shaking at $39^{\circ}C$, respectively. Dry matter degradability rates of H20, H23 and H25 were relatively higher than those of H8 and RF since 2 d incubation. The cumulative gas production of isolated cellulolytic bacteria increased with incubation time. At every incubation time, the gas production was highest in H20 strain. The activities of carboxymethylcellulase (CMCase) and Avicelase in the culture supernatant were significantly higher in H20 strain compared with others at every incubation time (p<0.05). Therefore, although further researches are required, the present results suggest that H20 strain could be a candidate of DFM in animal feed due to high cellulolytic ability.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.594-600
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• 2003

L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ perovskite-type mixed conducting membranes, which could permeate oxygen selectively, have been fabricated and the microstructural features developed by varying the sintering conditions have been analyzed. The effects of surface modification and the membrane thickness on oxygen permeability have been evaluated under He/air environment. With increasing a grain boundary fraction, the overall oxygen permeability decreased. The syngas (CO+ $H_2$) has been produced by partial oxidation reaction of methane with the oxygen permeated through the membrane. Methane conversion and syngas yield have been evaluated as functions of the compositional ratio of feed gas and reaction temperature. In long-term duration test for 600 h, under C $H_4$+He/air environment, L $a_{0.7}$S $r_{0.3}$G $a_{0.6}$F $e_{0.4}$ $O_{3-}$$\delta$/ membrane showed a highly stable performance.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1550-1552
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• 1999

In this study, (Ba,Sr)$TiO_3$ thin films were etched with a magnetically enhanced inductively coupled plasma (MEICP) as a function $CF_4$/Ar gas mixing ratio. Experimental was done by varying the etching parameters such as rf power, dc bias and chamber pressure. The maximum etch rate of the BST films was $1700{\AA}$/min under $CF_4/(CF_4+Ar)$ of 0.1, 600W/350V and 5 mTorr. The selectivity of BST to Pt and PR was 0.6, 0.7, respectively. X-ray photoelectron spectroscopy (XPS) studies shows that there are surface reaction between Ba, Sr, Ti and C, F radicals during the (Ba,Sr)$TiO_3$ etching. To analysis the composition of surface residue remaining after the etching, films etched with different $CF_4$/Ar gas mixing ratio were investigated using XPS.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.428-435
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• 1992

AISI 4600 Iron powder was mixed with 0~1.0% phosphor as F$e_2$P powder and/or 0~0.8% carbon as graphite powder in rotating mixer. Mixed powder was pressed 800MPa in double-punch mould. Compacts were sintered at 115$0^{\circ}C$for 30 min. in vacuum or mixed hydrogen and nitrogen gas. Sintered compacts were ground and polished, and etched by 2% nital etchant. The microstructure was observed by image analyzer and optical microscope. Density and microhardness were tested by ASTM B3l2 and Microvickers hardness tester. The results obtained were as follows : (1) As the amount of F$e_2$P powder increased, sintered microstructure showed more densified effect and the grain size was larger. (2) The shape of pore was rounded and the number of pore was decreased by F$e_2$P addition. But mean pore size was larger with F$e_2$P content. (3) Simultaneous alloying addition of F$e_2$P and graphite brought about larger grain growth than respective addition. (4) Sintering atmosphere did not affect the microstructure. (5) Hardness of sintered compact increased with phosphrous and carbon content.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.269-275
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• 1993

미래의 ULSI 소자의 게이트 산화막으로 이용하기 위하여 $N_{2}$O 가스 분위기에서 기존의 전기로를 이용한 실리콘의 열산화에 의해 $N_{2}$O 산화막을 형성하였고 MOS 소자를 제작하여 전기적 특성을 고찰하였다. 900.deg.C에서 90분간 산화한 $N_{2}$O 산화막의 경우, 플랫밴드 전압( $V_{FB}$ ), 고정전하밀도 ( $N_{f}$)와 플랫밴드 전압의 변화량(.DELTA. $V_{FB}$ )은 각각 0.81[V], 6.7x$10^{10}$[$cm^{-2}$]와 80~95[mV]를 나타내었다. $N_{2}$O 산화막의 전기전도기구는 저전계 영역에서는 Fowler-Nordheim 터널링, 고전계영역에서는 Poole-Frenkel 방출이 지배적으로 나타났고 절연파괴전계는 16[MV/cm]로 높게 나타났다. 따라서 $N_{2}$O 산화로 형성된 게이트 산화막이 ULSI소자의 게이트 유전체로 응용이 가능하리라 생각된다..