• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.235-238
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• 2009

This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with $N_2$ in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: $Si_2(CH_3)_6)$ at $1200^{\circ}C$. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various $N_2$ flow rate. In the case of 0 sccm $N_2$ flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of $N_2$ flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.

• Korean Journal of Agricultural Science
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• v.28 no.2
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• pp.108-115
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• 2001

In this study, to propose the reasonable evaluation method of degree of consolidation considering the depth of soft ground, the two soft ground areas were chosen and analyzed for the consolidation degree. One was a western coast area in which depth of soft ground was low, and the other was a southern coast area in which depth of soft ground was deep. At the area in which depth of soft ground was low, Barron's and Yoshikuni's methods showed that the evaluation of consolidation degree was large, and it is reasonable that $C_h=C_v$ be recommended to apply the Hansbo's and the Onoue's methods. At the area in which depth of soft ground was deep, it is reasonable that $C_h=C_v$ be recommended to apply the Barron's and the Yoshikuni's methods, and $C_h=(2{\sim}3)C_v$ to apply the Hansbo's and the Onoue's methods. According to the Hansbo's and Onoue's methods, degree of consolidation proved to be applicable with measured data when using the $k_s=(1/3)k_v$ at the area which depth of soft ground was low and using the $k_s=(1{\sim}1/2)k_v$ at the area which depth of soft ground was deep. According to the Hansbo's and Onoue's methods, degree of consolidation was proved to be applicable with measured data when using ds=(3~5)dm at the area which depth of soft ground was low and using ds=2dm at the area which depth of soft ground was deep.

• Korean Journal of Veterinary Service
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• v.37 no.3
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• pp.157-164
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• 2014

Clostridium chauvoei is the etiologic agent of blackleg, a high mortality rated disease infection mainly cattle. In the present study, the partial sequences of 16S rRNA and flagellin gene of C. chauvoei isolated in Jeonbuk, Korea were determined and compared with those of reference strain. Oligonucleotide primers were designed to amplify a 811 bp fragment of 16S rRNA gene and 1229 bp fragment of flagellin gene. Sequencing analysis of 16S rRNA gene showed high homology to the reference strains ranging 82.3% to 100%, while flagellin gene were different from published foreign clostridia, showing 98.7% to 72.0% nucleotide sequence homology. Phylogenetic analysis based on 16S rRNA gene revealed the close phylogenetic relationship of C. chauvoei and C. septicum in cluster I, which includes C. carnis, C. tertium, C. quinii, C. celatum, C. perfringens, C. absonum, C. botulinum B. Phylogentic analysis also revealed that flagellin gene formed a single cluster with C. chauvoei, C. septicum, C. novyi A, C. novyi B, C. tyrobutylicum, C. acetobutylicum. The genetic informations obtained from this study could be useful for the molecular study of C. chauvoei.

• Annual Conference of KIPS
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• 2007.05a
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• pp.945-948
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• 2007

시리얼 통신은 다양한 분야의 임베디드 시스템에서 사용되는 통신 시스템의 일종이다. ${\mu}C/OS-II$는 실시간 임베디드 시스템에 사용되는 실시간 운영체제이다. S3C2440A 는 이러한 임베디드 시스템에 사용되는 마이크로 프로세서로 칩에 집적 된 UART 를 통하여 시리얼 통신을 지원한다. 이 논문에서는 시리얼 통신 중 ${\mu}C/OS-II$ 기반의 실시간 시스템을 위한 시리얼 통신의 설계와 S3C2440A로의 포팅을 한다.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.13-18
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• 1985

Semiconductive $Ba_{0.9}Sr_{0.1}TiO_3$ was prepared by both the Calcining of mixed Oxides (C. M. O) and the Molten Salt Synthesis(M.S.S) methods to investigate the PTCR effects. In the Molten Salt Synthesis method the temperature of calcination for Synthesis of $BaTiO_3$ could be lowered from 110$0^{\circ}C$ to 80$0^{\circ}C$. The M.S.S Specimens had smaller grain size and more homogeneous size distribution at the same sintering temperature as compared with the C. M. O specimens. The M. S. S. specimens showed greater PTCR effects and current variations in the time vs. current charac-teristics than those of C. M. O Specimens.

• Biomedical Science Letters
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• v.18 no.3
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• pp.307-309
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• 2012

(S)-(+)-3(3,4-dihydroxy-phenyl)-acrylic acid 2,2-dimethyl-8-oxo3,4-dihydro-2H,8H-pyrano[3,2-g]Chromen-3-yl-ester (Compound 6, C6) is synthesized from (S)-(+)-decursin and attenuates the pathophysiologic progression of asthma in a ovalbumin-induced asthmatic mouse model. In the present study, we examined the effect of C6 on spontaneous apoptosis of eosinophils and neutrophils of normal and asthmatic subjects. C6 increased the apoptosis of asthmatic eosinophils in a dose-dependent manner, but it inhibited neutrophil apoptosis. C6 has no effect on apoptosis of normal eosinophils and neutrophils. LY294002, an inhibitor of PI3K, rottlerin, an inhibitor of $PKC{\delta}$, Ro-31-8425, an inhibitor of classical PKC inhibitor, PD98059, an inhibitor of MEK, and BAY 11-7085, an inhibitor of NF-${\kappa}B$, blocked the inhibitory effect on apoptosis of asthmatic neutrophils due to C6. These results indicate that C6 may be valuable as a therapeutic agent for the treatment of asthma.

• Journal of Welding and Joining
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• v.30 no.6
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• pp.106-112
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• 2012

This study was carried out to investigate the effect of bonding temperature and holding time on microstructure and mechanical properties in brazing joints of Ni-base superalloy using MBF-30 (Ni-4.5Si-3.2B [wt.%]). The heating rate was $20^{\circ}C$/min to the bonding temperatures $1050^{\circ}C$, $1070^{\circ}C$, $1090^{\circ}C$ under high vacuum condition. The holding times were 100s, 400s, 900s and 1600s. $Ni_3B$ phases and proeutectic Ni were observed in the interlayer of Ni-201. Then, Ni3B and Ni3Si were found in the middle region of brazing joint. Cr-boride phase appeared in the interlayer of Inconel-625. Tensile strength and elongation were decreased at $1050^{\circ}C$-1600s, $1070^{\circ}C$-900s and $1090^{\circ}C$-400s. After observation the fracture specimens, There was Ni3B which is very brittle phase in the grain boundary of Ni201.

• Korean Journal Plant Pathology
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• v.11 no.3
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• pp.258-264
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• 1995

Production and some properties of chitinolytic enzymes were investigated by 80% ammonium sulfate precipitates (crude enzymes) from culture supernatant of antagonistic bacteria, Chromobacterium violaceum strain C-61 and strain C-72, Aeromonas hydrophila, Aeromonas caviae, and Serratia marcescens. The maximum production of chitinase was obtained from the 3-day culture at 28$^{\circ}C$ in C. violaceum stains, the 6-day culture in S. marcescens, and the 2-day culture in A. hydrophila and A. caviae. In the optimum culture periods, chitinase activity of C. violaceum strains C-61 was 1.5, 5.5, 12.0 and 11.3 times higher than those of strain C-72, S. marcescens, A. hydrophila and A. caviae, respectively. However, N,N'-diacetylchitobiase activity was 3.2 times higher in S. marcescens than in C. violaceum strain C-61, and that of Aeromonas spp.was very low. On gels containing glycol chitin, chitinase of C. violaceum strains showed four isoforms of 54-, 52-, 50- and 37-kDa, whereas there were four isoforms of 58-, 52-, 48- and 38-kDa in S. arcescens, three isoforms of 70-, 58- and 54-kDa in A. hydrophila and six isoforms of 90-, 79-, 71-, 63-, 58- and 38-kDa in A. caviae. The chitinase of C. violaceum strain C-61 was most active at pH 7.0 and at 5$0^{\circ}C$ and was stable in ranges of pH 5.0~10.0 for 2 hours and of 0~5$0^{\circ}C$ for 30 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Korean Journal of Materials Research
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• v.7 no.11
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• pp.1018-1023
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• 1997

본 연구에서는 3C-SiC의 ohmic 접합에 대하여 그 전기적 특성과 미세구조의 상관관계에 대하여 분석하였다. 표준사진식각 공정을 통하여 ohmic접합 금속으로서 Ni을 진공증착시켜 일련의 TLM패턴으로 열처리에 따르는 전류-전압 특성을 조사하였고 TEM, SEM, AES, EDS를 사용하여 Ni/SiC 계면에 대한 미세구조, 화학적 특성을 분석하였다. 열처리 온도와 시간을 통한 thermal budget이 증가함에 따라서 접촉저항이 감소되었으며 그 값은 $10^{-2}$-$10^{-4}$Ω$\textrm{cm}^2$의 범위에 속하였다. EDS와 AES를 통하여 7$50^{\circ}C$이상의 열처리 후 silicide(NiSi$_{2}$)의 주변에 carbon층이 형성되는 것을 확인하였으며, 열처리 온도가 증가함에 따라서 island형 silicide의 크기가 조밀해지며 SiC와의 접착성이 향상됨을 알 수 있었다. Ni/3C-SiC ohmic 접합의 전기적 특성은 계면에 생성되는 silicide와 carbon의 형성거동에 의하여 결정되는 것으로 믿어진다.