• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.8
• /
• pp.869-874
• /
• 1992

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.18 no.1
• /
• pp.59-65
• /
• 2008

In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.333-334
• /
• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Journal of the Korean Ceramic Society
• /
• v.18 no.2
• /
• pp.79-82
• /
• 1981

SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)

• Journal of the Korean Ceramic Society
• /
• v.31 no.7
• /
• pp.767-771
• /
• 1994

In a salb-preheating furnace of steel-making industry, the oxidation/degradation behavior of Cr3C2 ceramic composited dkid button reaction with scale in Fe-oxide system occurs and was thermodynamically examined. The reaction of scale with Cr3C2 skid button produces Cr3C2(s) and C(s), and Co gas is then evolved from the reaction of C(s) with Fe-scale. Cr3C2(s) from oxidation of Cr3C2(s) reacted with Fe-oxide(s) becomes high-melting chromite. The chromite acts as protection layer against further oxidation and improves resistance of the reaction of Cr3C2 skid button with Fe-scale.

• Journal of the Korean Society for Heat Treatment
• /
• v.20 no.5
• /
• pp.237-242
• /
• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• The Korean Journal of Ceramics
• /
• v.6 no.3
• /
• pp.315-317
• /
• 2000

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

• Progress in Superconductivity and Cryogenics
• /
• v.13 no.1
• /
• pp.6-11
• /
• 2011

The $BaHfO_3$ (BHO) buffer layer on the IBAD MgO template was turned to be effective for a successful fabrication of $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films with high critical current density ($J_c$). Both the BHO buffer layers and GdBCO films were prepared by pulsed laser deposition (PLD). The effects of the PLD conditions, including substrate temperature ($T_s$), oxygen partial pressure ($PO_2$), and deposition time on the in-plane texture, surface roughness, and microstructures of the BHO buffer layers on the IBAD MgO template were systematically studied for processing optimization. The c-axis oriented growth of BHO layers was insensitive to the deposition temperature and the film thickness, while the in-plane texture and surface roughness of those were improved with increasing $T_s$ from 700 to $800^{\circ}C$. On the optimally processed BHO buffer layer, the highest $J_c$ value (77 K, self-field) of 3.68 $MA/cm^2$ could be obtained from GdBCO film deposited at $780^{\circ}C$, representing that BHO is a strong candidate for the buffer layer on the IBAD MgO template.

• Journal of the Korean Society for Heat Treatment
• /
• v.7 no.3
• /
• pp.206-218
• /
• 1994

In 50%$NH_3+Air+N_2$ atmospheres, the effect of air additions on the growth characteristics of the compound layer during oxynitriding at $570^{\circ}C$ for 2hr in carbon and alloy steels has been investigated. The ammount of apparent residual ammonia during oxynitriding has shown to be increased with air additions(9~36 Vol. %) and X-ray diffraction analysis of case oxynitreded has shown that the compound layer consist of ${\varepsilon}-Fe_{2-3}$(N, C) phase and ${\gamma}^{\prime}-Fe_4$(N,C) phase. In the case of carbon steels, the thickness of oxide layer, compound layer and porous layer and the amount of ${\varepsilon}-Fe_{2-3}$(N,C) phase in the compound layer were increased with additions of air in 50%$NH_3+N_2$ atmospheres. At the same gas composition, the thickenss of oxide layer, compound layer and porous layer in alloy steels showed slightly thin layer thickness compared to those of carbon steels and the ${\gamma}^{\prime}-Fe_4$(N,C) phase in the compound layer of alloy steels was found barely. Therefore, the most obvious effect of air addition in the gas nitriding atmosphere has been found to in crease further kinetics of nitriding reaction.

• Journal of the Korean institute of surface engineering
• /
• v.52 no.3
• /
• pp.111-116
• /
• 2019

Chromium was coated on a steel substrate by the Cr(III) electroplating method, and corroded at $500-900^{\circ}C$ for 5 h in $N_2/0.1%H_2S-mixed$ gas to study the high-temperature corrosion behavior of the Cr(III) coating in the highly corrosive $H_2S-environment$. The coating consisted of (C, O)-supersaturated, nodular chromium grains with microcracks. Corrosion was dominated by oxidation owing to thermodynamic stability of oxides compared to sulfides and nitrides. Corrosion initially led to formation of the thin $Cr_2O_3$ layer, below which (S, O)-dissolved, thin, porous region developed. As corrosion progressed, a $Fe_2Cr_2O_4$ layer formed below the $Cr_2O_3$ layer. The coating displayed relatively good corrosion resistance due to formation of the $Cr_2O_3$ scale and progressive sealing of microcracks.