• Title/Summary/Keyword: $C_2H_2$ sensor

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Fabrication of C2H2 Gas Sensors Based on Ag/ZnO-rGO Hybrid Nanostructures and Their Characteristics (Ag/ZnO-rGO 하이브리드 나노구조 기반 C2H2 가스센서의 제작과 그 특성)

  • Lee, Kwan-Woo;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.41-46
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    • 2015
  • In this work, pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped hierarchical ZnO structure was synthesized uniformly through photochemical route. The reduced graphene oxide (rGO) has been synthesized by typical Hummer's method and reduced by hydrazine. Prepared Ag/ZnO nanostructures are uniformly dispersed on the surface of rGO sheets using ultrasonication process. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. The average size of prepared ZnO microspheres was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of doped-Ag nanoparticles was 50 nm and decorated into ZnO/rGO network. The $C_2H_2$ gas sensing properties of as-prepared products were investigated using resistivity-type gas sensor. Ag/ZnO-rGO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the Ag/ZnO. The $C_2H_2$ sensor based on Ag/ZnO-rGO had linear response property from 3~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 22% and 78% for Ag/ZnO and Ag/ZnO-rGO, respectively. In additions, the sensor still shows high sensitivity and quick response/recovery to $C_2H_2$ under high relative humidity conditions. Moreover, the device shows excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

C3H8 Gas Sensitivity of Pd, Pt-$SnO_2$ Gas Sensor with Varying Impregnation Method (함침 방법의 차이에 따른 Pd, Pt-$SnO_2$의 프로판 가스 감응성 변화)

  • 이종흔;박순자
    • Journal of the Korean Ceramic Society
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    • v.27 no.5
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    • pp.638-644
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    • 1990
  • The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

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Fabrication of C2H2 Gas Sensors Based on Ag-Doped Hierarchical ZnO Nanostructures and Their Characteristics (Ag가 도핑된 계층적 ZnO 나노구조 기반 C2H2 가스센서의 제작과 그 특성)

  • Lee, Kwan-Woo;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.23 no.6
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    • pp.397-401
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    • 2014
  • This paper describes the fabrication and characteristics of $C_2H_2$ gas sensor based on Ag-doped hierarchical ZnO nanostructures. In this work, a pure hierarchical ZnO structure was prepared using a simple hydrothermal method, and Ag nanoparticles doped the hierarchical ZnO structure were uniformly synthesized through photochemical route. The synthesized samples were characterized by SEM, TEM, EDS, XRD and PL spectra. Average size of prepared ZnO structures was around $2{\sim}3{\mu}m$ and showed highly uniform. The average size of Ag nanoparticles was 70 nm. The gas sensing properties of as-prepared products were investigated using resistivity-type gas sensors. 5 at% Ag-doped ZnO based sensors exhibited good performances for $C_2H_2$ gas in comparison with the un-doped one. The sensor based on Ag-doped hierarchical ZnO structures had linear response property from 5~1000 ppm of $C_2H_2$ concentration at working temperature of $200^{\circ}C$. The response values with 100 ppm $C_2H_2$ at $200^{\circ}C$ were 10% and 75% for pure and 5 at% Ag-doped hierarchical ZnO nanostructures, respectively. Moreover, the device showed excellent selectivity towards to $C_2H_2$ gas at optimal working temperature of $200^{\circ}C$.

C2H5OH Sensor Using Porous Cr2O3 Nano-Hexaprisms (다공성 Cr2O3 나노육각기둥을 이용한 C2H5OH 센서)

  • Jeong, Hyun-Mook;Lee, Jong-Heun
    • Journal of Sensor Science and Technology
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    • v.21 no.6
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    • pp.451-455
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    • 2012
  • Dense Cr-precursor nano-hexaprisms were prepared by heating the Cr-nitrate aqueous solution containing Hexamethylenetetramine and polyvinylpyrrolidone, which were converted into porous $Cr_2O_3$ nano-hexaprisms containing nanoparticles by heat treatment of Cr-precursors at $600^{\circ}C$ for 2 h in air atmosphere. At the sensor temperature of $300^{\circ}C$, porous $Cr_2O_3$ nano-hexaprism showed the high response ($R_g/R_a$, $R_g$: resistance in gas, $R_a$: resistance in air) to 100 ppm $C_2H_5OH$ ($R_g/R_a=69.8$) with negligible cross-responses to 100 ppm CO and 5 ppm $C_6H_6$. The sensitive and selective detection of $C_2H_5OH$ in porous $Cr_2O_3$ nano-hexaprism were discussed in relation to the morphology of nanostructures.

A study on CO gas sensing Characteristics of Pt-SiC $SnO_2$-pt-SiC Schottky Diodes (Pt 및 Pt-$SnO_2$를 전극으로 하는 SiC 쇼트키 다이오드의 CO 가스 감응 특성)

  • Kim, C.K.;Noh, I.H.;Yang, S.J.;Lee, J.H.;Lee, J.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.805-808
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    • 2002
  • A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

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CO Gas Sensing Characteristic of ZnO Thin Film/Nanowire Based on p-type 4H-SiC Substrate at 300℃ (P형 4H-SiC 기판에 형성된 ZnO 박막/나노선 가스 센서의 300℃에서 CO 가스 감지 특성)

  • Kim, Ik-Ju;Oh, Byung-Hoon;Lee, Jung-Ho;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.91-95
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    • 2012
  • ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

Study on Optimal Structure of Low Power Microheater to Remain Stability at High Temperature (고온에서 안정한 저전력 마이크로히터 구조 최적화 연구)

  • Lim, Woonhyun;Kondalkar, Vijay;Lee, Keekeun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.68 no.1
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    • pp.69-76
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    • 2019
  • Microheaters with different structures were fabricated and compared to find an optimal configuration enhancing the performances of $C_2H_2$ gas sensor. Three temperature sensors were integrated on the surface of the insulation layer over the microheater, and resistance changes were observed to check the generated heat from the microheater. A low operating voltage of 1mV was applied to the temperature sensor to minimize any influence of thermal heat from the resistance type temperature sensor, whereas high voltages in the range between 10 and 20V were applied to the microheater. A microheater structure generating maximum heat at low voltage was determined. The generated heat was verified by the temperature sensors on the top of the $Si_3N_4$ and infrared camera. A long term stability and accuracy of the microheater were observed. The developed microheater was applied to enhance the performances of $C_2H_2$ gas sensor and successfully confirmed that the developed microheater greatly contributes to the improvement of sensitivity and selectivity of gas sensor.

Catalytic combustion type hydrogen micro gas sensor using thin film heater and nano crystalline SnO2 (나노 결정 SnO2와 백금 박막히터를 이용한 접촉연소식 마이크로 가스센서의 감응특성 연구)

  • Han, Sang-Do;Hong, Dae-Ung;Han, Chi-Hwan;Chun, Il-Soo
    • Journal of Sensor Science and Technology
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    • v.17 no.3
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    • pp.178-182
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    • 2008
  • Planar type micro catalytic combustible gas sensor was developed by using nano crystalline $SnO_2$ Pt thin film as micro heater was deposited by thermal evaporation method on the alumina substrate. The thickness of the Pt heater was around 160 nm. The sensor showed high reliability with prominent selectivity against various gases(Co, $C_3H_8,\;CH_4$) at low operating temperature($156^{\circ}C$). The sensor with nano crystalline $SnO_2$ showed higher sensitivity than that without nano crystalline $SnO_2$. This can be explained by more active adsorption and oxidation of hydrogen by nano crystalline $SnO_2$ particles. The present planar-type catalytic combustible hydrogen sensor with nano crystalline $SnO_2$ is a good candidate for detection of hydrogen leaks.

Characteristics Improvement of a FET-Type Glucose Sensor and Its Application to a Glucose Meter (FET형 포도당센서의 특성개선과 이를 이용한 포도당측정기 개발)

  • Lee, C.H.;Choi, S.B.;Lee, Y.C.;Seo, H.I.;Sohn, B.K.
    • Journal of Sensor Science and Technology
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    • v.7 no.4
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    • pp.271-278
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    • 1998
  • A ISFET-based glucose sensor has inherent problems such as low sensitivity, drift effect and long response time. For that reason, a amperometric actuation technique was introduce to make a highly sensitivity of the ISFET glucose sensor with a Pt actuator, which electrolyzes $H_2O_2$, one of the by a by-products of the oxidation reaction of glucose. Moreover, a potential-step measurement method detecting response by only the electrolysis of $H_2O_2$ was developed for eliminating a drift problem. The operation characteristics of ISFET-based glucose sensor was improved by using the amperometric actuation and a measurement techniques. The fabricated ISFET glucose sensor is shown good operation such as characteristics(30mM PBS, about 26mV/decade) and linearity. A portable glucose meter with a highly resolution by using the fabricated ISFET-based glucose sensor with Pt actuation was developed and its characteristics investigated.

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Highly Porous Tungsten Oxide Nanowires As Resistive Sensor for Reducing Gases

  • Nguyen, Minh Vuong;Hoang, Nhat Hieu;Jang, Dong-Mi;Jung, Hyuck;Kim, Do-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.16.1-16.1
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    • 2011
  • Gas sensor properties of $WO_3$ nanowire structures have been studied. The sensing layer was prepared by deposition of tungsten metal on porous single wall carbon nanotubes followed by thermal oxidation. The morphology and crystalline quality of $WO_3$ material was investigated by SEM, TEM, XRD and Raman analysis. A highly porous $WO_3$ nanowire structure with a mean diameter of 82 nm was obtained. Response to CO, $NH_3$ and $H_2$ gases diluted in air were investigated in the temperature range of $100{\sim}340^{\circ}C$ The sensor exhibited low response to CO gas and quite high response to $NH_3$ and $H_2$ gases. The highest sensitivity was observed at $250^{\circ}C$ for $NH_3$ and $300^{\circ}C$ for $H_2$. The effect of the diameters of $WO_3$ nanowires on the sensor performance was also studied. The $WO_3$ nanowires sensor with diameter of 40 nm showed quite high sensitivity, fast response and recovery times to $H_2$ diluted in dry air. The sensitivity as a function of detecting gas concentrations and gas sensing mechanism was discussed. The effect of dilution carrier gases, dry air and nitrogen, was examined.

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