• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.4
• /
• pp.351-357
• /
• 1995

The surface layer of the aluminum film reactively ion etched in $CF_4$ plasma was ana alyzed by using XPS. $AlF_3$ which is nonvolatile is formed at the aluminum surface. As the analyzed depth increases, the intensity of the $Al_{2p}$ peak of Al - F bonds decreases while that of a aluminum metallic bond increases. The thickness of the $AlF_x$ surface layer is 50~100 $\AA$ and the deep penetration of fluorine atoms is attributed to the mixing effect by the bombardment of incident particles. For the aluminum oxide film which is etched in $CF_4$ plasma under the same conditions, oxygen atoms are substituted by fluorine atoms to form $$AIF_x$ surface layer, which is m much thinner than that formed on aluminum surface.

• Bulletin of the Korean Mathematical Society
• /
• v.34 no.4
• /
• pp.561-571
• /
• 1997

The general (continuous) solution and the asymptotic behaviors of the unbounded solution of the functional equation $f(x + y)^2 = af(x)f(y) + bf(x)^2 + cf(y)^2$ and the Hyers-Ulam stability of that functional equation for the case when a = 2 and b = c = 1 shall be investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.12
• /
• pp.1016-1020
• /
• 2002

Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

• Bulletin of the Korean Chemical Society
• /
• v.18 no.3
• /
• pp.296-300
• /
• 1997

The intracluster ion/molecule reactions within 1,1-difluoroethene homocluster have been studied by electron-impact quadrupole mass spectrometry. When CH2CF2 seeded in helium is expanded and ionized by electron impact, two different types of ion/molecule association (polymerization) reaction products, i.e., (CH2CF2)n+ (n≥l) and (CF2CH2)qX+ (X=fragment species, q≤n), are formed. The higher association products, (CH2CF2)n+ (n=3, 4), have shown stronger intensities over the lower association product, (CH2CF2)2+, in the low electron impact energy region ( < 39 eV). These stronger intensities are interpreted in terms of the stabilization of these ions due to the ring formations over the dimer ion in this energy region. The evidence of ring formation mechanism is on the basis of the intensity distribution of fragments at various electron impact energy. In another typical branched-chain growth reaction of these compounds, the F-shift reaction path is found to be more favorable energetically than the H-shift via the fragment patterns of clusters and semi-empirical calculation.

• Journal of the Chungcheong Mathematical Society
• /
• v.21 no.3
• /
• pp.347-354
• /
• 2008

In this paper, we will show that ($CF(X,K),{\chi}_{{\parallel}{\mid}{\cdot}{\parallel}{\mid}}$) is a fuzzy Banach space using that the dual space $X^*$ of a normed linear space X is a crisp Banach space. And for a normed linear space Y instead of a scalar field K, we obtain ($CF(X,Y),{\rho}^*$) is a fuzzy Banach space under the some conditions.

• Carbon letters
• /
• v.26
• /
• pp.11-17
• /
• 2018

Milled carbon fiber (mCF) was prepared by a ball milling process, and X-ray diffraction (XRD) diffractograms were obtained by a $2{\theta}$ continuous scanning analysis to study mCF crystallinity as a function of milling time. The raw material for the mCF was polyacrylonitrile-based carbon fiber (T700). As the milling time increased, the mean particle size of the mCF consistently decreased, reaching $1.826{\mu}m$ at a milling time of 18 h. The XRD analysis showed that, as the milling time increased, the fraction of the crystalline carbon decreased, while the fraction of the amorphous carbon increased. The (002) peak became asymmetric before and after milling as the left side of the peak showed an increasingly gentle slope. For analysis, the asymmetric (002) peak was deconvoluted into two peaks, less-developed crystalline carbon (LDCC) and more-developed crystalline carbon. In both peaks, Lc decreased and $d_{002}$ increased, but no significant change was observed after 6 h of milling time. In addition, the fraction of LDCC increased. As the milling continued, the mCF became more amorphous, possibly due to damage to the crystal lattices by the milling.

• Journal of the Korean institute of surface engineering
• /
• v.32 no.2
• /
• pp.165-171
• /
• 1999

The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

• Electrical & Electronic Materials
• /
• v.7 no.4
• /
• pp.294-299
• /
• 1994

CHF$_{3}$/CH$_{4}$Ar 플라즈마에 의해 형성된 산화막 식각 잔류물의 화학구조와 이 잔류물의 제거를 위한 세정방법을 x-ray photoelectron spectroscopy를 이용하여 조사하였다. 잔류무르이 구조는 CF$_{x}$-polymer와 Si-C, Si-O 결합으로 이루어진 SiO$_{y}$ C$_{z}$ 이었다. CF$_{4}$O$_{2}$ 플라즈마에 의한 silicon light etch는 산화막 식각 잔류물인 SiO$_{y}$ C$_{z}$ 층과 손상된 실리콘 표면을 제거하엿으며 NH$_{4}$OH-H$_{2}$O$_{2}$과 HF용액으로 완전히 제거되는 CF$_{x}$-polymer/SiO$_{x}$층을 남겼다. 100.angs.정도의 silicon light etch는 minority carrier life time과 thermal wave signal값을 초기 웨이퍼 수준까지 회복시켰으며 접합누설 전류도 거의 습식 식각 공정수준까지 감소시켰다.

• ETRI Journal
• /
• v.11 no.1
• /
• pp.89-96
• /
• 1989

$C_2F_6$/$CHF_6$ 플라즈마를 이용한 실리콘 산화막의 반응성이온 식각공정시 실리콘 표면에 형성되는 고분자 잔류막과 근표면 손상영역을 X-선 광전자분광법(x-ray photoelectron spectroscopy)과 러더포드 후방산란법(Rutherford backscattering)을 이용하여 연구하였다. 표면 잔류막은 CF, $CF_2$, $CF_3$, $C-CF_x$, 그리고 C-C/C-H 등의 결합을 가진 불화탄소 고분자로 구성되어 있으며, 또한 C 1s와 Si 2p X-선 광선자 스펙트럼으로부터 C-Si 결합이 존재함을 확인하였다. 반응성이온 식각을 거친 실리콘 표면 구조의 연구결과, 불소와 탄소로 구성된 고분자막($<20 \AA$)이 극표면에 존재하며, 식각 후 공기중에 노출됨에 따라 고분자 잔류층으로 산소가 통과하여 기판을 산화시킴으로써 실리콘 산화막( $~10\AA$)이 그 아래에 형성되었음을 알았다. 그리고 실리콘산화막 아래에 탄소-산소 결합영역이 관찰되었다. 플라즈마 가스의 조성에서 $CHF_3$의 량이 증가함에 따라 고분자 잔류막의 두께가 증가하였으며, 본 연구의 실험조건에서 2분간 overetching한 시편의 경우에도 실리콘 표면 영역의 손상정도가 매우 적음을 발견하였다.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.2
• /
• pp.27-31
• /
• 2002

In this study, $CeO_2$ thin films were etched with an addition of $Cl_2$ gas to $Ar/CF_4$ gas mixing in an inductively coupled plasma (ICP) etcher by the etching parameter such as RF power of 700 W, chamber pressure of 15 mTorr and dc bias voltage of -200 volts. The etch rate of $CeO_2$ films was 250 $\AA$/min with an addition of 10% $Cl_2$ gas to $Ar/CF_4$ gas mixture and the selectivity to SBT film was 0.4 at that condition. The surface reactions of the etched $CeO_2$ thin films were investigated by X-ray photoelectron spectroscopy (XPS). It was analyzed that Ce peaks were mainly observed in Ce-O bonds formed $CeO_2$ or $Ce_2O_3$ compounds. Cl peaks were detected by the peaks of Cl $2p_{3/2}$ and Cl $2p_{1/2}$. Almost all of Cl atoms were combined with Ce atoms like $CeCl_x$ or $Ce_x/O_yCl_z$ compounds.