• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.438-444
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• 1989

The role of TiC and the effect of Y2O3 addition on the densification, microstructure and mechanical properties of Al2O3-TiC composite have been studied. The amount of Y2O3 has been varied from 0 to 2 wt.% while keeping the TiC content at 10, 20 or 30 wt.%. The powder compacts have been sintered at 1,75$0^{\circ}C$ for various times in 1 atm Ar atmosphere and hot isostatically pressed (HIPed) at 1,$600^{\circ}C$ for 0.5h under 1,500atm Ar. Considerable increase in sintered density(over 95%) has been achieved by adding 0.5 wt.% Y2O3 in specimens containing high TiC volume. More addition of Y2O3 does not affect the densification. With increasing the sintering time from 0.5 to 4h, slight increase in density results. The growth of Al2O3 grain has been enhanced by Y2O3 addition ; this tendency is reduced with increasing TiC content because of grain boundary dragging effect of TiC particles. The hardness of specimens increases considerably by an addition of 0.5wt.% Y2O3 owing to the density increase. Further addition of Y2O3 has no effect on hardness. Fracture toughness augments with TiC content by crack deflection around the particles. By adding 0.5wt.% Y2O3, all the specimens can be densified to isolated pore stage and thus can be HIPed to full densification and better mechanical property. In particular, the fracture toughness of Al2O3-30 TiC specimen increases about 50% by HIPing. Fully dense Al2O3-30 TiC with good mechanical properties can be prepared by normal Sintering/HIPing process.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3635-3640
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• 2013

We prepared Ni and Pd-modified $TiO_2@SiO_2$ core-shell nanostructures and then analyzed them by scanning electron microscopy, optical microscopy, X-ray diffraction crystallography, FT-IR and UV-Visible absorption spectroscopy. In addition, their CO oxidation performance was tested by temperature-programmed mass spectrometry. The CO oxidation activity showed an order of Ni-$TiO_2@SiO_2$ ($900^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($90^{\circ}C$) < Ni-$TiO_2@SiO_2$ ($450^{\circ}C$) in the first CO oxidation run, and greatly improved activity in the same order in the second run. The $T_{10%}$ (the temperature at 10% CO conversion) corresponds to the CO oxidation rate of $2.8{\times}10^{-5}$ molCO $g{_{cat}}^{-1}s^{-1}$. For Ni-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at $365^{\circ}C$ in the first run and at $335^{\circ}C$ in the second run. For the Pd-$TiO_2@SiO_2$ ($450^{\circ}C$), the $T_{10%}$ was observed at a much lower temperature of $263^{\circ}C$ in the first CO oxidation run, and at $247^{\circ}C$ in the second run. The CO oxidation activities of transition metal modified $TiO_2@SiO_2$ core-shell nanostructures presented herein provide new insights that will be useful in developing catalysts for various environments.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.7
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• pp.344-348
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• 2006

The effect of x on microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics for microwave components were investigated. All spcecimens prepared by the conventional mixed oxied method and sintered at $1450^{\circ}C$. Microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-xTiO_2$ ceramics were influenced by $MgTi_2O_5$ phase. Also the microwave dielectric properties of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were dominated with an addition of $CaTiO_3\;and\;SrTiO_3$. The dielectric constant $(\varepsilon_r)$, quality factor $(Q{\times}f_r)$ and temperature coefficient of the resonant frequency $(TCRF,\;\tau_f)$ of the $(1-x)Mg_4Ta_2O_9-x(TiO_2,\;CaTiO_3,\;SrTiO_3)$ ceramics were $12.96\sim70.98,\;5,132\sim186,410GHZ$ and $-35.82\sim+75.96ppm/^{\circ}C$, respectively, and depend on x and addition materials.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.345-351
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• 2017

A double-layered anti-reflective coating with hydrophilic/abrasion-resistant properties was studied using anatase titanium dioxide($TiO_2$) and silicon oxycarbide($SiO_xC_y$) thin film. $TiO_2$ and $SiO_xC_y$ thin films were sequentially deposited on a glass substrate by DC sputtering and PECVD, respectively. The optical properties were measured by UV-Vis-NIR spectrophotometer. The abrasion-resistance and the hydrophilicity were observed by a taber abrasion tester and a contact angle analyzer, respectively. The $TiO_2/SiO_xC_y$ double-layer thin film had an average transmittance of 91.3%, which was improved by 10% in the visible light region (400 to 800 nm) than that of the $TiO_2$ single-layer thin film. The contact angle of $TiO_2/SiO_xC_y$ film was $6.9^{\circ}$ right after UV exposure. After 9 days from the exposure, the contact angle was $10.2^{\circ}$, which was $33^{\circ}$ lower than that of the $TiO_2$ single-layer film. By the abrasion test, $SiO_xC_y$ film showed a superior abrasion-resistance to the $TiO_2$ film. Consequently, the $TiO_2/SiO_xC_y$ double-layer film has achieved superior anti-reflection, hydrophilicity, and abrasion resistance over the $TiO_2$ or $SiO_xC_y$ single-layer film.

• Journal of Powder Materials
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• v.23 no.1
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• pp.33-37
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• 2016

10 wt.% and 20 wt.%$Li-TiO_2$ composite powders are synthesized by a sol-gel method using titanium isopropoxide and $Li_2CO_3$ as precursors. The as-received amorphous 10 wt.%$Li-TiO_2$ composite powders crystallize into the anatase-type crystal structure upon calcination at $450^{\circ}C$, which then changes to the rutile phase at $750^{\circ}C$. The asreceived 20 wt%$Li-TiO_2$ composite powders, on the other hand, crystallize into the anatase-type structure. As the calcination temperature increases, the anatase $TiO_2$ phase gets transformed to the $LiTiO_2$ phase. The peaks for the samples obtained after calcination at $900^{\circ}C$ mainly exhibit the $LiTiO_2$ and $Li_2TiO_3$ phases. For a comparison of the photocatalytic activity, 10 wt.% and 20 wt.% $Li-TiO_2$ composite powders calcined at $450^{\circ}C$, $600^{\circ}C$, and $750^{\circ}C$ are used. The 20 wt.%$Li-TiO_2$ composite powders calcined at $600^{\circ}C$ show excellent efficiency for the removal of methylorange.

• Korean Journal of Materials Research
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• v.1 no.4
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• pp.206-213
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• 1991

The crystallized solder glasses with the low melting temperature for electronic package were prepared with the compositions of 77-80wt% PbO, 4.5-6wt% ZnO, 7.5-8.5wt% $B_2O_3$, 1-2wt% CaO, and 0.5-2.0wt% $P_2O_5$ containing 3-7wt% $TiO_2$. The Characterization of the solder glasses were studied using DTA, SEM and XRD. Frit containing 3wt% $TiO_2$ had crytallzation temperature range of $420-440^{\circ}C$. The major crystalline phase was identified as $2PbO{\cdot}ZnO{\cdot}B_2O_3$ by X-ray diffraction. Frits containing 4 wt% $TiO_2$ consisted of crysalline Phases of $PbTiO_3$ and $2PbO{\cdot}ZnO{\cdot}B_2O_3$ in the temperature range of $420-440^{\circ}C$, When g1ass frit containing 5wt% $TiO_2$ were heat-treated in the temperature range of $440-460^{\circ}C$, major crytalline phase was perovskite lead titanate.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.360-365
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• 2004

Ti$_3$SiC$_2$ material was synthesized via the powder metallurgical route, and oxidation tested between 900 and $1200^{\circ}C$ in air for up to 100 hr. The oxidation of $Ti_3$$SiC_2$ material resulted in the formation of $TiO_2$and $SiO_2$, accompanying the evolution of CO or $CO_2$ gases from the initial stage of oxidation. The oxidation resistance of $Ti_3$$SiC_2$ mainly owes the protectiveness of highly stoichiometric $SiO_2$. During the initial stage of oxidation, the dominant reaction was the inward transport of oxygen into the matrix. As the oxidation progressed, an outer $TiO_2$ layer and an inner ( $TiO_2$ + $SiO_2$) mixed layer formed. Between these layers and inside the oxide scale, numerous fine voids formed. Numerous, fine oxide grains formed at $900^{\circ}C$ developed into the outer coarse $TiO_2$ grains and an inner fine ($TiO_2$ + $SiO_2$) mixed grains at the higher temperatures. The oxidation resistance of$ Ti_3$SiC$_2$ progressively deteriorated as the oxidation temperature increased, forming thick scales above $1000^{\circ}C$. The outer coarse $TiO_2$ grains formed above $1100^{\circ}C$ grew rapidly mainly along (211).

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1110-1111
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• 2006

[ $Ti_3SiC_2$ ] was coated with $Al_2O_3$, MgO and $SiO_2$ respectively by sol-gel method and cured at 900 and $1200^{\circ}C$. The coated oxides did not react with $Ti_3SiC_2$ at $900^{\circ}C$ but reacted with it to form $TiC_x$ at $1200^{\circ}C$. The specimen coated with $SiO_2$ at $900^{\circ}C$ formed a dense protecting layer and showed the best oxidation resistance at $800^{\circ}C$ in air. However, the dense protecting layers did not form in $Al_2O_3$ and MgO coated specimens cured even at $900^{\circ}C$. MgO coated specimen showed the worst improvement in the oxidation resistance because the reactivity of MgO with $Ti_3SiC_2$ was highest. On the other hand, the electrical conductivities were measured in MgO and $Al_2O_3$ coated specimens to have TiCx but could not be measured in the $SiO_2$ coated ones because of the nonconductive dense protected layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.6
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• pp.269-273
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• 2001

The effect of $TiO_2$addition on the hydration reaction of MgO ceramics were studied after being heated at $1450^{\circ}C$. The pure MgO ceramics showed significant weight change after exposure to water due to the hydration reaction through the formation of $Mg(OH)_2$while $TiO_2$-added MgO ceramics did not. The $Mg_2TiO_4$phase were observed in the $TiO_2$-added MgO ceramics sintered at 145$0^{\circ}C$. Bulk density increased as the amount of $TiO_2$increased and the apparent porosity and water absorption decreased by $TiO_2$addition. The hydration resistance of MgO ceramics was found to be improved by $TiO_2$addition.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.68-68
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• 2000

펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.