• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1223-1224
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• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Journal of Powder Materials
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• v.22 no.4
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.135-139
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• 2015

$Bi_2Te_3-Bi_2Se_3$ alloy which is typical n-type thermoelectric material were grown by traveling heater method (THM) technique. We investigate the effect of the composition of $100-x(Bi_2Te_3)-x(Bi_2Se_3)$ and doping of n-type dopants such as $SbI_3$ and $CdCl_2$. Maximum figure of merit of $Bi_2Te_3-Bi_2Se_3$ alloy was observed with $CdCl_2$ 0.1 wt% (Z: $2.73{\times}10^{-3}/K$) and $SbI_3$ 0.05 wt% (Z: $2.29{\times}10^{-3}/K$). Deviation along the length of $Bi_2Te_3-Bi_2Se_3$ ingot grown by THM method is low, which indicates that the ingot is very homogenized. Also we observed the close relationship of between anisotropy ratio and dopant in the $90(Bi_2Te_3)-10(Bi_2Se_3)$ alloys. And we confirmed the fact that anisotropy ratio exerts thermoelectric performance in $Bi_2Te_3$ based n-type thermoelectric material.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.3080-3087
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• 2023

Thermoelectric (TE) materials working in radioisotope thermoelectric generators are irradiated by neutrons throughout its service; thus, investigating the neutron irradiation stability of TE devices is necessary. Herein, the influence of neutron irradiation with fluences of 4.56 × 10¹⁰ and 1 × 10¹³ n/cm² by pulsed neutron reactor on the electrical and thermal transport properties of n-type Bi₂Te_2.7Se_0.3 and p-type Bi_0.5Sb_1.5Te₃ thermoelectric alloys prepared by cold-pressing and molding is investigated. After neutron irradiation, the properties of thermoelectric materials fluctuate, which is related to the material type and irradiation fluence. Different from p-type thermoelectric materials, neutron irradiation has a positive effect on n-type Bi₂Te_2.7Se_0.3 materials. This result might be due to the increase of carrier mobility and the optimization of electrical conductivity. Afterward, the effects of p-type and n-type TE devices with different treatments on the output performance of TE devices are further discussed. The positive and negative effects caused by irradiation can cancel each other to a certain extent. For TE devices paired with p-type Bi_0.5Sb_1.5Te₃ and n-type Bi₂Te_2.7Se_0.3 thermoelectric legs, the generated power and conversion efficiency are stable after neutron irradiation.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.40-49
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• 1997

$Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ thermoelectric matcrials havc 11et:n fahricxted hy mechanical alloying and hot pressing methods. Microstructure and thermoelectric properties of the hot 11resseii $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ have been investigated Lvith variations of hot pressing temperature and dopmt atltiition Formation of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ alloy powders was completed by mechanical alloying of the as-mixed Ri. Te, arid Sc grmules of ~3.6mm size for 3 hours at ball-to-material weight ratio of 5 : 1. Figure of merit of $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ was markedly incrcwieti hy hot pressing at temperatures above $450^{\circ}C$, and value of $1.9{\times}10^{-3}/K$ was obtained for the specimen hot pressed at $550^{\circ}C$. With addition of 0.015 wt% Ri as acceptor dopant, figure of merit ol $Bi_{2}(Te_{0.9}Se_{0.1})_{3}$ hot pressed $550^{\circ}C$$2.1{\times}10^{-3}/K$.

• Journal of Powder Materials
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• v.18 no.5
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• pp.437-442
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• 2011

The present study focused on the synthesis of Bi-Te-Se-based powder by an oxide-reduction process, and analysis of the thermoelectric properties of the synthesized powder. The phase structure, chemical composition, and morphology of the synthesized powder were analyzed by XRD, EPMA and SEM. The synthesized powder was sintered by spark plasma sintering. The thermoelectric properties of the sintered body were evaluated by measuring its Seebeck coefficient, electrical resistivity, and thermal conductivity. $Bi_2Te_{2.7}Se_{0.3}$ powder was synthesized from a mixture of $Bi_2O_3$, $TeO_2$, and $SeO_2$ powders by mechanical milling, calcination, and reduction. The sintered body of the synthesized powder exhibited n-type thermoelectric characteristics. The thermoelectric properties of the sintered bodies depend on the reduction temperature. The Seebeck coefficient and electrical resistivity of the sintered body were increased with increasing reduction temperature. The sintered body of the $Bi_2Te_{2.7}Se_{0.3}$ powder synthesized at $360^{\circ}C$ showed about 0.5 of the figure of merit (ZT) at room temperature.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of Powder Materials
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• v.23 no.2
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• pp.126-131
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• 2016

The recent rise in applications of thermoelectric materials has attracted interest in studies toward the fabrication of thermoelectric materials using mass production techniques. In this study, we successfully fabricate n-type $Bi_2Te_{2.7}Se_{0.3}$ material by a combination of mass production powder metallurgy techniques, gas atomization, and spark plasma sintering. In addition, to examine the effects of hydrogen reduction in the microstructure, the thermoelectric and mechanical properties are measured and analyzed. Here, almost 60% of the oxygen content of the powder are eliminated after hydrogen reduction for 4 h at $360^{\circ}C$. Micrographs of the powder show that the reduced powder had a comparatively clean surface and larger grain sizes than unreduced powder. The density of the consolidated bulk using as-atomized powder and reduced atomized powder exceeds 99%. The thermoelectric power factor of the sample prepared by reduction of powder is 20% better than that of the sample prepared using unreduced powder.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.3
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• pp.126-134
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• 2018

In this research, we produced polycrystalline n-type $Bi_2Te_{2.7}Se_{0.3}$ powder using water atomization. To obtain full benefit through water atomized powder, we have implemented spark plasma sintering and hot extrusion for powder compaction. The microstructure and thermoelectric properties were investigated and compared. The average grain size of SPS and extruded bulks were 3.08 and $3.86{\mu}m$ respectively. The extruded material microstructure contains layered grains with less grain boundaries and its counter-part SPS displays dense packed grains with high grain boundaries. Among both bulks, extrusion sample exhibited high power factor (PF) of $2.96{\times}10^{-3}Wm^{-1}K^{-2}$ which is 38% higher than SPS ($2.14{\times}10^{-3}$) bulk sample. Due to variations in grain size and grain boundaries, the SPS bulk shows low thermal conductivity than extruded bulk. However, the extruded bulk sample exhibited a peak ZT of 0.69 at 400 K, which is 19% higher than SPS bulk sample, due to its higher power factor.

• Korean Journal of Materials Research
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• v.7 no.5
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• pp.374-380
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• 1997

열전재료 분말을 AI관에 진공봉입하고 형틀가입한 후 소결하는 새로운 방법으로 n형 B $i_{2}$T $e_{2.4}$S $e_{0.6}$를 제조하여 소결조건에 따른 소결성과 열전특성을 조사.분석하였다. AI은 소결시 열전재료와 반응하지 않아 보호 용기로 적합하였으며, 평균입도 195$\mu\textrm{m}$의 분말을 사용하여 성형압 280 MPa, 온도 400에서 50$0^{\circ}C$에서 소결할 경우 성능지수는 1.9x $10^{-3}$K였다.다.