• 제목/요약/키워드: $Bi_2Sr_2CaCu_2O_y$

검색결과 231건 처리시간 0.024초

Oscillatory Josephson-Vortex Resistance in Stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$ Intrinsic Josephson Junctions

  • 최재현;배명호;이후종;김상제
    • Progress in Superconductivity
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    • 제7권1호
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    • pp.17-21
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    • 2005
  • We report the oscillation of the Josephson vortex-flow resistance in the rectangular stacks of $Bi_{2}Sr_{2}CaCu_{2}O_{8+x}$(Bi-2212) intrinsic Josephson junctions (IJJs). Apiece of Bi-2212 single crystal containing a few tens of IJJs was sandwiched between two gold electrodes and fabricated into a rectangular shape with the typical lateral size of about $1.5{\times}10\;{\mu}m^2$, using e-beam lithography and focused ion-beam etching techniques. In a tesla-range magnetic field applied in parallel with the junction planes, the oscillation of the Josephson vortex flow resistance was observed at temperatures near 60 K. The oscillation results from the interplay between the triangular Josephson vortex lattice and the potential barrier at the boundary of a single crystal. The oscillatory magnetoresistance for different bias currents, external magnetic fields, and the tilt-angles provides useful information on the dynamics of the coupled Josephson-vortex lattice system.

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열처리 조건에 따른 Bi계 초전도체에서 상 생성 과정에 대한 연구 (A Study on the Phase Formation Process in Bi-system Superconductor with Heat Treatment Conditions)

  • 정진인;이준웅;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
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    • pp.221-223
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    • 1999
  • In this work, samples were manufactured variously by changing conventional calcining and sintering conditions and we tried the utilization by making the heat treatment time, which is demanded to high-Tc phase formation, much shorter. We found out optimal heat treatment conditions with the analysis on formation process at superconducting phase in term of the change of calcining and sintering time and then, examined X-ray diffraction(XRD) patterns, scanning electron microscope(SEM) measurement and energy dispersive X-ray spectrometer(EDX) of the samples manufactured under heat treatment conditions which we suggest here. As a result, 2223 high-$T_c$, phase of (Bi,Pb)SrCaCuO superconductor starting with ($Bi_l$ xPbx,)$_2$$Sr_2$$Ca_2$$Cu_3$$O_y$, composition was formed from 1 hr sintering sample at temperature nearby melting point and also the completed sample with calcining and sintering time of 9 hr was formed high-$T_c$.low-$T_c$ phase appearing in sight above the critical temperature of liquid $N_2$.

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LPE법으로 성장시킨 Bi2Sr2Ca(Cu1-xNix)2O8+δ 막(film)의 초전도특성 및 터널링 분광 (Superconducting Properties and Tunneling Spectroscopy of Bi2Sr2Ca(Cu1-xNix)2O8+δ Film by LPE Method)

  • 이민수
    • 한국세라믹학회지
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    • 제40권5호
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    • pp.455-459
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    • 2003
  • LPE(Liquid Phase Epitaxial)법을 이용하여 성장시킨 B $i_2$S $r_2$Ca(C $u_{1-x}$ N $i_{x}$ )$_2$ $O_{8+}$$\delta$/ 막(film)을 break junction 법을 이용하여 터널링 분광을 측정하였다. Ni 조성비 $\chi$$_{L}$의 증가에 따라 에너지 간격 2$\Delta$의 크기는 증가하였다. 에너지 간격 2$\Delta$(4.2 K)는 54.4~64 meV, 2$\Delta$/ $k_{B}$ $T_{c}$ $^{zero}$는 7.36~10.14로 BCS 이론에 의한 값 보다 큰 결과를 얻었다. 융액(melting solution) 속의 Ni 조성비 $\chi$$_{L}$의 증가에 따라, 임계온도 $T_{c}$ $^{zero}$와 격자상수 c-축의 길이는 감소하는 경향을 보였다.을 보였다.$^{zero}$와 격자상수 c-축의 길이는 감소하는 경향을 보였다.

Formation and Intergrowth of the Superconducting Phase in the Bi2Sr2Can-1CunOx (n=2~4) System

  • Cheon, Min-Woo;Park, Yong-Pil
    • Transactions on Electrical and Electronic Materials
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    • 제5권5호
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    • pp.199-203
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    • 2004
  • Superconducting B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=2~4) thin films were prepared by single target DC-magnetron sputtering. And, that was compared with the B $i_2$S $r_2$C $a_{n-l}$C $u_{n}$ $O_{x}$(n=1~3) thin film fabricated by using the ion beam sputtering. Phase intergrowth among n=2-3, 3-4 and 4-5 phases was observed. The molar fraction of each phase in the mixed crystal of the deposited films was determined by x-ray diffraction analyses and investigated as a function of $O_2$ gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. Also, the thin film surface observation was carried out by atomic force microscope. The images show the average particle size decreases, and the distribution density of particles on the film surface was to increase with lower gas pressures. The fabrication conditions for selective growth of the single n=2, 3 and 4 phases in BiSrC $a_{n-l}$C $u_{n}$ $O_{x}$(n=2~4) thin film are discussed.e discussed.ussed.

Bi-계 고온초전도 선재의 제조 및 특성 연구 (A study on the fabrication and characterization of high temperature superconducting(HTS) tapes in Bi-System)

  • 정년호;성태현;한영희;한상철;이준성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.474-477
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    • 2002
  • We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

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Bi-Pb-Sr-Ca-Cu-O 초전도상의 안정화에 미치는 소결시간의 영향 (The Effect of Sintering Time on the Stabilization of the Bi-Pb-Sr-Ca-Cu-O Superconducting Phase)

  • 형경우;박성호;이두원;한태종;최범식;김창은
    • 한국세라믹학회지
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    • 제29권2호
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    • pp.95-100
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    • 1992
  • A high-Tc superconducting phase was obtained using long sintering time of 210 hours. From XRD and SEM analyses, it could be confirmed that the particles were plate phase, of which the structure is tetragonal system with lattice parameter a=b=5.44${\AA}$, C=37.18${\AA}$. Resistance and current density measurements were carried out using 4 probe method. The experimental data revealed that the stable high-Tc superconducting phase was easily formed by addition of Pb to Bi-system. Therefore, we could find the sintering condition to synthesis the system having the largest fraction of high Tc phase.

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초 저속 순차증착으로 제작한 Bi계 초전도 박막의 생성막 평가 (Analysis of the Hi-system Superconducting Thin Films Fabricated by Layer-by-Layer Deposition Method at an Ultra low growth rate)

  • 양승호;김영표;박용필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.503-504
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    • 2007
  • $Bi_2Sr_2Ca_{n-1}Cu_nO_x$(n=0, 1, 2)superconducting thin films have been fabricated by atomic layer-by-layer deposition at an ultra low growth rate using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

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Effect of Gd Substitution for the Ca Site in the Bi1.84Pb0.34Sr1.91 ({Ca1-xGdx)2.03Cu3.06O10+δ(x=0.0~0.06) Superconductors

  • Lee, Min-Soo
    • 한국세라믹학회지
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    • 제40권5호
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    • pp.405-409
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    • 2003
  • The effect of substitution of Gd ions for Ca ions in the B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$(C $a_{1-x}$ G $d_{x}$)$_{2.03}$ C $u_{3.06}$ $O_{ 10+{\delta}}$/ (x=0.0~0.06) was investigated by measuring x-ray diffraction patterns, lattice constants, do resistivity and Hall effect. We found the solubility limit of Gd in the 110 K phase to be x < 0.015. Within the solubility limit, the c-axis seemed to decrease with increasing x. In the region of the 110 K single phase, the critical temperature $T_{c}$ gradually decreased with an increasing the Gd concentration x, corresponding to a small change of the carrier concentration.