• Korean Journal of Materials Research
• /
• v.10 no.6
• /
• pp.430-436
• /
• 2000

In this paper, we have studied the effect of constituent ratio NiO, CuO and doped with B-Bi-Zn on proper-ties(microstructure, density, shrinkage, permeability as a function of frequency, etc.) of hexagonal-ferrite for high fre- quency chip-inductor material about several GHz. The permeability were analyzed by impedance analyzer(100 kHz∼ 40 MHz) and network analyzed(30 MHz∼3 GHz). As a result of the characteristics. the B-Bi-Zn glass ceramic was used to lower the sintering temperature for additive as function of frequency from 100kHz to 1.8 GHz showed con-stant tends. The maximum imaginary value of complex permeability was observed near the resonance frequency of 2 GHz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.1
• /
• pp.38-43
• /
• 2013

In this study we aims to examine the effects of $Co_3O_4$ and NiO doping on the defects and electrical properties in ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5) varistors. It seemed to form ${Zn_i}^{{\cdot}{\cdot}}$(0.20 eV) and ${V_o}^{\cdot}$(0.33 eV) as dominant defects in Co and Ni co-doped ZBS system, however only ${V_o}^{\cdot}$ appeared in Co- or Ni-doped ZBS. Even though the same defects it was different in capacitance (1.5~4.5 nF) and resistance ($0.3{\sim}9.5k{\Omega}$). The varistor characteristics were improved with Co and Co+Ni doping (non-linear coefficient, ${\alpha}$= 36 and 29, relatively) in ZBS. The various parameters ($N_d=1.43{\sim}2.33{\times}10^{17}cm^{-3}$, $N_t=1.40{\sim}2.28{\times}10^{12}cm^{-2}$, ${\Phi}b$=1.76~2.37 V, W= 98~118 nm) calculated from the C-V characteristics in our systems did not depend greatly on the type of dopant, which were in the range of a typical ZnO varistors. It should be derived a improved C-V equation carefully for more reliable parameters because the variation of the varistor capacitance as a function of the applied dc voltage is depend on the defect, frequency, and temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.2
• /
• pp.190-197
• /
• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.3
• /
• pp.200-207
• /
• 2011

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.1
• /
• pp.30-36
• /
• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.6
• /
• pp.683-689
• /
• 2004

The microstructure and electrical characteristics of A ∼ C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature was 1130 $^{\circ}C$ and speeds of pusher were A: 2 mm/min, B: 4 mm/min, C: 6 mm/min, respectively, were investigated. The experimental results obtained from this study were summarized as follows: The sintering density of A ∼C's ZnO varistors sintered at 1130 $^{\circ}C$ were decreased by sintering keep time to shorten, such as A: 9hour, B: 4.5hour and C: 3hour. A's ZnO varistor exhibited good densification nearly 98 % of theory density. In the microstructure, A∼C's ZnO varistors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase(Z $n_{2.33}$S $b_{0.67}$ $O_4$), Bi-rich phasc(B $i_2$ $O_3$), wholly. Varistor voltage of A∼C's ZnO varistors sintered at 1130 $^{\circ}C$ increased in order A