• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.11
• /
• pp.878-885
• /
• 2012

In this study we aims to examine the co-doping effects of 1/3 mol% $Mn_3O_4+Co_3O_4$ (1:1) on the reaction, microstructure, and electrical properties such as the bulk defects and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (ZBS; Sb/Bi=0.5, 1.0, and 2.0) varistors. The sintering and electrical properties of Mn,Co-doped ZBS, ZBS(MCo) varistors were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed and promoted densification at lower temperature on heating in Sb/Bi=1.0 by Mn rather than Co. Pyrochlore on cooling was reproduced in all systems however, spinel (${\alpha}$- or ${\beta}$-polymorph) did not formed in Sb/Bi=0.5. More homogeneous microstructure was obtained in $Sb/Bi{\geq}1.0$ In ZBS(MCo), the varistor characteristics were improved drastically (non-linear coefficient, ${\alpha}$=30~49), and seemed to form $Zn_i^{..}$(0.17 eV) and $V_o^{\bullet}$(0.33 eV) as dominant defects. From impedance and modulus spectroscopy (IS & MS), the grain boundaries have divided into two types, i.e. the one is tentatively assign to $ZnO/Bi_2O_3(Mn,Co)/ZnO$ (0.47 eV) and the other ZnO/ZnO (0.80~0.89 eV) homojunctions.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.245-245
• /
• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• Journal of the Korean Ceramic Society
• /
• v.29 no.2
• /
• pp.101-106
• /
• 1992

Sintering behavior, distribution of dopant oxides and electrical properties in the ZnO-Bi2O3-CoO-Sb2O3 and ZnO-Bi2O3-CoO-Sb2O3-Cr2O3 systems were studied. The linear shrinkage of ZnO varistors from 850 to 950$^{\circ}C$ was related to the decomposition reaction (py\longrightarrowsp+Bi2O3) of the pyrochlore phase. In the distribution of the dopant oxides (CoO, Sb2O3, Cr2O3), Co distribute uniformly throughout the sample, the distribution of Sb coincided with small particles (spinel phase, Zn7Sb2O12), and Cr distributed very consistently with Sb. The increase in breakdown voltage, due to the addition of Cr2O3, was not only attributed to the decrease in the ZnO grain size but also to the solution of Cr2O3 in the spinel phase. The leakage current (80% V60 ${\mu}\textrm{A}$) was increased by the addition of Cr2O3.

• Korean Journal of Materials Research
• /
• v.18 no.12
• /
• pp.678-682
• /
• 2008

This study investigates $Bi_2O_3$-$B_2O_3$-BaO-ZnO glass with variations of the $Co_3O_4$ content (0.25, 0.5, 1, and 2 wt%) and the interaction between transparent dielectric and Ag electrodes heat-treated at $500-560^{\circ}C$ for 30 min. The glass transition temperature, softening temperature and thermal expansion coefficient were $432^{\circ}C$, $460^{\circ}C$ and $81.4{\times}10^{-7}/^{\circ}C$, respectively. The transmittance of 0.25 wt% $Co_3O_4$ to which dielectric was added was highest and was decreased due to coloration with the addition of more than 0.25 wt%. However, without $Co_3O_4$, the transmittance of the transparent layer was decreased due to the formation of $Ba_5Bi_3$; however, the occurrence of the crystal phase decreased as a result of the addition of $Co_3O_4$. The amount of $Co^{2+}$ ions increased as the $Co_3O_4$ increased. With a maximum of $Co^{3+}$ ions, the highest transmittance was observed.

• Korean Journal of Materials Research
• /
• v.2 no.1
• /
• pp.12-18
• /
• 1992

The trap levels of ZnO-based varistor are obtained by Isothermal Capacitance Transient Spectroscopy method. Here ICTS measuring system consists of YHP 4192A Impedance Analyzer and a personal computer for the data acquisition. Between $-40^{\circ}C$ and $60^{\circ}C$, the grain boundary trap levels of 0.48 and 0.94eV were detected for $ZnO-Bi_2O_3-MnO$ system. The hole omission spectra are observed in the case of the addition of CoO into the $ZnO-Bi_2O_3$ system, while the electron emission spectra are detected in the case of the addition of MnO. The nonlinear resistance coefficient $\alpha$ increases with the decrease of the dormer concentration. Finally, the trap level density of $ZnO-Bi_2O_3-MnO$ system is found to decrease with the amount of CoO, while $\alpha$ is found to increase with the amount of CoO.

• Resources Recycling
• /
• v.21 no.5
• /
• pp.65-71
• /
• 2012

The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.4
• /
• pp.276-280
• /
• 2019

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC ($ZnO-Zn_2BiVO_6-Co_3O_4-Cr_2O_3-CaCO_3$) varistor, with the liquid-phase sintering aid $Zn_2BiVO_6$ developed by our laboratory. The ZZCCC varistor sintered at $1,200^{\circ}C$ exhibited excellent nonlinear current-voltage characteristics (${\alpha}=63$), with oxygen vacancy ($V_o^*$ ; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if $Zn_2BiVO_6$ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.147-147
• /
• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.435-438
• /
• 2004

The effects sintering additives such as $xwt%(0.242Bi_2O_3-0.782V_2O_5)$ on the microwave dielectric and sintering properties of $MgCo_2(VO_4)_2$ ceramics were investigated. Highly dense samples were obtained for $MgCo_2(VO_4)_2$ at the sintering temperature of $950^{\circ}C$ with $0.242Bi_2O_3-0.758V_2O_5$ additions of $0.5{\sim}5wt%$. The microwave dielectric properties of $MgCo_2(VO_4)_2$ with $0.5wt%(0.242Bi_2O_3-0.758V_2O_5)$ sintered at $950^{\circ}C$ were as follows : $Q{\times}f_0\;=\;45,375GHz,\;\epsilon_r\;=\;9.7\;and\;\tau_f\;=\;-23.2ppm/^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.1
• /
• pp.1-6
• /
• 2008

Thermoelectric properties of calcium cobalt layer structure oxide system, $Ca_3Co_2O_6$ and $Ca_3Co_4O_9$ were investigated at the temperature range of 300 to 1000K for the application of thermoelectric generation. In the composition, the Ca site was partially substituted with Bi, Sr, La, K and the Co site was partially substituted with Mn, Fe, Ni, Cu, Zn. The thermoelectric properties of Bi substituted $Ca_3Co_4O_9$. $Ca_{2.7}Bi_{0.3}Co_4O_9$ for electrical conductivity, Seebeck coefficient and power factor were $85.4({\Omega}$cm)^{-l}, $176.2{\mu}V/K$ and $265.2{\mu}W/K^m$, respectively. The unit thermoelectric couple was fabricated with the p-type of $Ca_{2.7}Bi_{0.3}Co_4O_9$ and n-type ($Zn_{0.98}Al_{0.02}$)O thermoelectrics whose figure-of-merit(Z) were $0.87{\times}10^{-4}/K$ and $0.41{\times}10^4/K$, respectively. The generated thermoelectric power was about 30mV at the temperature difference of 120K in the unit thermoelectric couple.