• Title/Summary/Keyword: $Bi_{0.5}K_{0.5}TiO_3$

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Ferroelectric Properties of SBT Capacitor with Annealing Times

  • Cho, Choon-Nam;Lee, Joon-Ung
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.2
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    • pp.66-70
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    • 2004
  • The Sr$\_$0.7/Bi$\_$2.3/Ta$_2$O$\_$9/(SBT)thin films are deposited on Pt-coated electrode (Pt/TiO$_2$/SiO$_2$/Si) using a RE magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing times were studied. As a result of conducting the X-ray diffraction analysis and the electron microscopy analysis, the perovskite phase began to grow from 10 minutes after annealing the specimen, and excellent crystallization was accomplished at 60 minutes after annealing the specimen. The remanet polarization (2P$\_$r/) value and the coercive electric field (E$\_$c/) of the SBT thin film specimen showed the most excellent characteristics at 60 minutes after annealing the specimen, which were approximately 12.40 C/$\textrm{cm}^2$ and 30 kV/cm, respectively. The leakage current density of the SBT thin film specimen as annealed for 60 minutes was approximately 2.81${\times}$10$\^$-9/A/$\textrm{cm}^2$.

A study on Fabrication of Ferroelectric SST Thin Films by Liquid Delivery MOCVD Process (Liquid Delivery MOCVD공정을 이용한 강유전체 SBT 박막의 제조기술에 관한 연구)

  • Kang, Dong-Kyun;Paik, Seung-Kyu;Kim, Hyoeng-Ki;Kim, Byong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.111-115
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    • 2003
  • 200nm 정도의 두께를 가진 SBT 박막이 liquid delivery MOCVD 공정에 의해 (111) oriented Pt/Ti/$SiO_2$/Si 기판 위에 증착되었다 이 실험에서는 $Sr(TMHD)_2$tetraglyme, $Bi(ph)_3$ 그리고 $Ta(O^iPr)_4$(TMHD)를 출발 물질로 사용하였다. Sr 출발 물질의 열적 안정화를 위해서 adduct로 tetraglyme를 사용하여 실험하였고 유기 용매로는 n-butyl acetate를 사용하였다 Substrate temperature와 reactor pressure는 각각 $570^{\circ}C$와 5Torr로 유지시켰다. 또한 vaporizer의 용도는 $190-200^{\circ}C$, 그리고 delivery line 의 온도는 vaporizer 보다 높게 유지 $(220-230^{\circ}C)$하여 출발 용액을 분당 0.1ml로 50분간 주입하였다. 수송가스로 Ar, 산화제로 $O_2$ 가스를 사용하였다. 제조한 SBT 박막은 $750^{\circ}C$에서 열처리한 후 인가전압 3V와 5V에서 $2P_r$값이 각각 6.47, $8.98{\mu}C/cm^2$이었으며, $2E_c$값은 인가전압 3V와 5V에서 각각 2.05, 2.31V이었다 그리고 $800^{\circ}C$에서는$750^{\circ}C$에서 열처리한 SBT 박막보다 다소 우수한 이력특성을 나타내어 $2P_r$ 값은 인가전압 3V와 5V에서 각각 7.59, $10.18{\mu}C/cm^2$ 이었으며, $2E_c$값은 인가 전압 3V와 5V에서 각각 2.00, 2.21V 이었다.

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Dielectric and Piezoelectric Properties of Microwave Sintered BNT-ST Ceramics (마이크로파 소성법으로 제조한 BNT-ST 세라믹스의 유전 및 압전 특성)

  • Lee, Sang-Hun;Kim, Seong-Hyun;Erkinov, Farrukh;Nguyen, Hoang Thien Khoi;Duong, Trang An;Han, Hyoung-Su;Lee, Jae-Shin
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.37-44
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    • 2020
  • This study investigated the microstructure and piezoelectric properties of lead-free 0.74(Bi1/2Na1/2)TiO3-0.26SrTiO3 (BNST26) piezoelectric ceramics sintered using a microwave furnace. For comparison, specimens were also prepared using a conventional furnace sintering (CFS). Average grain sizes of 2.4 ㎛ and 3.2 ㎛ were obtained in the sample sintered at 1,100℃ for 5 min using microwave sintering (MWS) and at 1,175℃ for 2 h using CFS, respectively. To quantify the changes in the microstructures and electrical properties according to the sintering conditions, the polarization hysteresis, bipolar and unipolar strain curves, and temperature dependence of permittivity were evaluated. As a result, it was determined that the Pmax (maximum polarization), Pr (remanent polarization) and Smax (maximum strain) values tend to increase with the average grain size. Based on these results, it is concluded that the MWS method can produce lead-free ceramics with superior performance in a relatively short time compared to the conventional CFS method.

Molecular Beam Epitaxial Growth of Oxide Single Crystal Films

  • Yoon, Dae-Ho;Yoshizawa, Masahito
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.508-508
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    • 1996
  • ;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

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Structural and Electrical Properties of Sol-gel Derived BFO/PZT Thin Films with Variation of Solvents (솔-젤법으로 제작한 BFO/PZT 박막의 용매에 따른 구조적, 전기적 특성)

  • Cho, Chang-Hyun;Lee, Ju
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.895-899
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    • 2011
  • Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

Ferroelectric properties of BLT films deposited on $ZrO_2$Si substrates

  • Park, Jun-Seo;Lee, Gwang-Geun;Park, Kwang-Hun;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.172-173
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    • 2006
  • Metal-ferroelectric-insulator-semiconductor (MFIS) structures with $Bi_{3.35}La_{0.75}Ti_3O_{12}$ (BLT) ferroelectric film and Zirconium oxide ($ZrO_2$) layer were fabricated on p-type Si(100). $ZrO_2$ and BLT films were prepared by sol-gel technique. Surface morphologies of $ZrO_2$ and BLT film were measured by atomic force microscope (AFM). The electrical characteristics of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si film were investigated by C-V and I-V measurements. No hysteretic characteristics was observed in the C-V curve of the Au/$ZrO_2$/Si structure. The memory window width m C-V curve of the Au/BLT/$ZrO_2$/Si diode was about 1.3 V for a voltage sweep of ${\pm}5$ V. The leakage current of Au/$ZrO_2$/Si and Au/BLT/$ZrO_2$/Si structures were about $3{\times}10^{-8}$ A at 30 MV/cm and $3{\times}10^{-8}$ A at 3 MV/cm, respectively.

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NO Reduction Performance of V2O5-WO3/TiO2 Catalyst Supported on a Ceramic Sheet Filter (세라믹 시트 필터에 부착된 V2O5-WO3/TiO2 촉매의 NO 환원 성능)

  • Choi, Joo Hong
    • Clean Technology
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    • v.24 no.1
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    • pp.27-34
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    • 2018
  • Catalytic filter has many advantages for the industrial application owing to its bi-functional ability to treat nitrogen oxides and particulate simultaneously. The technical feasibility of using the catalytic filter in the flue gas treatment process will be more promoted if the high porous ceramic sheet filter is utilized. However, it is not easy to prepare the effective catalytic filter using sheet filter as it has less room for catalyst support due to its thin layer. In this study, catalytic filter using a domestic ceramic sheet filter element has been prepared and conducted the experimental evaluation for NO reduction performance. The current sheet filter element shows the low catalytic activity less than 92% conversion for NO concentration 700 ppm at the face velocity $0.02m\;s^{-1}$. This unexpected low catalytic activity seems to be caused by the present of extraordinary large pores from the lack of uniformity in the pore size distribution of the sheet filter. The large pore size of the sheet filter is reduced by composing the smaller powder as its raw material, which presents improvement in NO conversion more than 96%. More improvement is observed showing 98% NO conversion which is applicable to a commercial plant when the catalyst coating layer is expanded by adding the large $TiO_2$ particles during the catalyst preparation. Both of above two methods is regarded as that the broad gates of the larger pores in the coating layer are effectively filled with the proper catalyst. So these results encourage the utilization of sheet filter as a good catalytic filter material with its potential merit of high permeability.

Crystal Structure and Physical Property of Tetragonal-like Epitaxial Bismuth Ferrites Film

  • Nam, Joong-Hee;Biegalski, Michael;Christen, Hans M.;Kim, Byung-Ik
    • Proceedings of the Korean Magnestics Society Conference
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    • 2011.06a
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    • pp.7-8
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    • 2011
  • Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

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