• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.189-189
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• 2008

Due to the environmental issue vast research is going on to replace the widely used lead contented piezoelectric materials. Bismuth sodium titanate (abbreviated as BNT) based bismuth sodium titanate-barium titanate (abbreviated as BNBT) ceramic was prepared by using modified method rather than conventional mixed oxide method. This modification was made to improve the properties of BNT based ceramic. In this procedure $BaTiO_3$ (abbreviated as BT) was prepared using conventional mixed oxide method. Analytical grade raw materials of $BaCO_3$ and $TiO_2$ were weighted and ball milled using ethanol medium. The mixed slurry was dried and sieved under 80 mesh. Then the powder was calcined at $1100^{\circ}C$ for 2 hours. This calcined BT powder was used in the preparation of BNBT. Stoichiometric amount of $Bi_2O_3$, $Na_2CO_3$, $TiO_2$ and BT were weighted and mixed by using ball mill. The used calcination temperature was $850^{\circ}C$ for 2 hours. Calcined powder was taken for another milling step. BNBT disks were pressed to 15 mm of diameter and then cold isostatical press (CIP) was used. Pressed samples were sintered at $1150^{\circ}C$ for 2 hours. The SEM microstructure analysis revealed that the grain shape of the sintered ceramic was polyhedral and grain boundary was well matched where as the sample prepared by conventional method showed irregular arrangement and grain boundary not well matched. And sintered density was better (5.78 g/cc) for the modified method. It was strongly observed that the properties of BNBT ceramic near MPB composition was found to be improved by the modified method compare to the conventional mixed oxide method. The piezoelectric constant dB of 177.33 pC/N, electromechanical coupling factor $k_p$ of 33.4%, dielectric constant $K_{33}^T$ of 688.237 and mechanical quality factor $Q_m$ of 109.37 was found.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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• pp.221-225
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• 2003

The MFIS-FET(Field Effect Transistor) devices using $BLT/Y_2O_3$ buffer layer on p-Si(100) substrates were fabricated by the Sol-Gel method and conventional memory processes. The crystal structure, morphologies and electrical properties of prepared devices were investigated by using various measuring techniques. From the C-V(capacitance-voltage) data at 5V, the memory window voltage of the $Pt/BLT/Y_2O_3/si$ structure decreased from 1.4V to 0.6V with increasing the annealing temperature from $700^{\circ}C\;to\;750^{\circ}C$. The drain current (Ic) as a function of gate voltages $(V_G)$ for the $MFIS(Pt/BLT/Y_2O_3/Si(100))-FET$ devices at gate voltages $(V_G)$ of 3V, 4V and 5V, the memory window voltages increased from 0.3V to 0.8V as $V_G$ increased from 3V to 5V.

• 전기학회논문지P
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• 제55권1호
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• pp.31-34
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• 2006

A infrared rays sensor or ultrasonic sensor can detect the object at the narrow area, however a pressure sensor can detect man and animal at the wide area. It is necessary to manufacture the sensor by using Pb-free ceramics in the respect of environmental protection. Piezoelectric properties of ceramics added 0.2wt% $La_2O_3\;into\;0.96Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}+0.04SrTiO_3$ were 0.4 of kp, $31{\times}$10^{-3}Vm/N\;of\;g_{33}$. The output voltage of the pressure sensor is 0.48 V at 20 in$H_2O$. The output voltage of the pressure sensor with driving circuit is 9.8 V, 37 ms width.

• 한국결정학회지
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• 제11권2호
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• pp.95-101
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• 2000

Ferroelectric SrBi2Ta2O9 (SBT) thin films of Pt/Ti/SiO2 electrode were fabricated using a sintered SBT target with various Bi2O3 content by rf magnetron sputtering. Good hysteresis loop characteristics were observed in the SBT thin films deposited with 50mol% excess Bi target. SBT thin films crystallized from 650℃ however, good hysteresis loop can be obtained in the film annealed above 700℃. pt/TiO2/SiO2 and Pt/SiO2 electrodes were also used to investigate the Pt electrode dependence of SBT thin films. SBT thin films showed random oriented polycrystalline structure and similar morphology regardless of electrodes with quite different surface morphology. A 0.2㎛ thick SBT film annealed at 750℃ exhibited the remanent polarization (2Pr) of μC/㎠ and coercive voltage(Vc) of 1V at an applied voltage of 5V.

• 한국재료학회지
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• 제11권11호
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• pp.960-964
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• 2001

$Bi_{3.99}Ti_{2.97}V_{0.03}O_{12}$ (BTV) thin films with 3 mol% vanadium doping were Prepared on $Pt/Ti/SiO_2/Si$ substrate by sol-gel method. X-ray diffraction analysis indicated that single-phase layered perovskite were obtained and preferred orientation was not observed. Under the annealing temperature at $600^{\circ}C$, the surface morphology of the BTV thin films had fine-rounded particles and then changed plate-like at $650^{\circ}C$ and $700^{\circ}C$. The remanent polarization $(2P_r)$ and coercive field $(2E_c)$ of $700^{\circ}C$ annealed BTV thin film were 25 $\mu$C/cm$^2$ and 116 kV/cm, respectively. In addition, BTV thin film showed little polarization fatigue during $10_9$ switching cycles. These improved ferroelectric properties were attributed to the increased rattling space and reduced oxygen vacancies by substitution $Ti^{4+}$ ion (68 pm) with smaller $V^{5+}$ ion (59 pm). The dielectric constant and loss were measured 130 and 0.03 at 10 kHz, respectively.

• 센서학회지
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• 제23권5호
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• pp.337-341
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• 2014

For various additives doped-$VO_2$ critical temperature sensors using the nature of semiconductor to metal transition, the crystallinity, microstructure, and temperature vs. resistance characteristics were systematically investigated. As a starting material of $VO_2$ sensor, vanadium pentoxide ($V_2O_5$) powders were used, and CaO, SrO, $Bi_2O_3$, $TiO_2$, and PbO dopants were used, respectively. The $V_2O_5$ powders with dopants were mixed with a vehicle to form paste. This paste was silk screen-printed on $Al_2O_3$ substrates and then $V_2O_5$-based thick films were heat-treated at $500^{\circ}C$ for 2 hours in $N_2$ gas atmosphere for the reduction to $VO_2$. From X-ray diffraction analysis, $VO_2$ phases for pure $VO_2$, and CaO and SrO-doped $VO_2$ thick films were confirmed and their grain sizes were 0.57 to $0.59{\mu}m$. The on/off resistance ratio of the $VO_2$ sensor in phase transition temperature range was $5.3{\times}10^3$ and that of the 0.5 wt.% CaO-doped $VO_2$ sensor was $5.46{\times}10^3$. The presented critical temperature sensors could be commercialized for fire-protection and control systems.

• 한국전기전자재료학회논문지
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• 제29권2호
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• pp.90-94
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• 2016

In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.245-248
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• 2003

Randomly oriented ferroelectric cerium-substituted $Bi_4Ti_3O_{12}$ thin films have been prepared by using metal-organic decomposition method. The layered perovskite structure was investigated using annealing for 1 h in the temperature range from $550\;{\sim}\;750\;^{\circ}C$. The structure and morphology of the films were characterized using X-ray diffraction and scanning electron microscopy The $Bi_{3.4}Ce_{0.6}Ti_3O_{12}$ (BCeT) thin films showed a perovskite phase and dense microstructure. The grain size of the BCeT films increasedwith increasing annealing temperature. The hysteresis loops of the films were well defined at temperatures above $600\;^{\circ}C$. The 200-nm-thick BCeT thin films annealed at $650\;^{\circ}C$ showed a large remanent polarization (2Pr) of 59.3 ${\mu}C/cm^2$ at an applied voltage of 10 V. The BCeT thin films showed good fatigue endurance up to $5\;{\times}\;10^9$ bipolar cycling at 5 V and 100 kHz.

• 한국재료학회지
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• 제25권7호
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• pp.317-321
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• 2015

The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 1999년도 제1회 학술대회논문집(KIASC 1st conference 99)
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• pp.3-9
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• 1999

The grain morphology, the changes in morphology and Jc with the thermo-mechanical treatment (TMT) history, the field dependence of Jc and the nature of intergranular bonding were studied in $T_{10.8}$$Pb_{.2}$$Bi_{0.2}$$Sr_{1.8}$$Ba_{0.2}$$Ca_{2.2}$$Cu_{3}$$O_{z}$/Ag tapes. As a result, incorporation of intermediate rolling during the final heat-treatment resulted in of plate-like TI-1223 grains, and thus enhanced Jc. Jc's near 2.5$\times$104 A/cm2 at 77 K and 0 T were obtained in just rolled tapes with an excellent reproducibility. The high Jc's seem to grain-connectivity easy recovery of excellent grain-connectivity during final heat-treatment after inter -mediate rolling, probably due to retarded T1 evaporation and excessive Ca content in the present composition. The strong field dependence of Jc even in low fields, however, indicated that there still existed significant weak-links and the degree of directional grain-alignment was far from the desired one. The intergranular binding in the tapes seemed to be mainly dominated by SIS junctions.