• Title/Summary/Keyword: $BiMnO_3$

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The Study on the Improvement of Piezoelectric and Electrical Characteristics of Bi0.5(Na0.78K0.22)0.5TiO3 Ceramics Modified by the La-based ABO3 Pervskite Structure (La 기반의 ABO3 구조를 갖는 첨가물에 따른 Bi0.5(Na0.78K0.22)0.5TiO3의 압전 및 전기적인 특성 향상 연구)

  • Lee, Ku Tak;Park, Jung Soo;Yun, Ji Sun;Cho, Jeong Ho;Jeong, Young Hun;Paik, Jong Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.11
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    • pp.707-711
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    • 2014
  • The $0.99Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3-0.01LaAlO_3$, $0.01LaMnO_3$ or $0.01LaFeO_3$ (0.99BNKT-0.01LA, 0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure and morphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (field emission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA, LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leading to decrease in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysterisis loops. The effects of the BNKT ceramics modified by La-based $ABO_3$ pervskite structure on the electric-field induced strain were investigated, and the largest normalized unipolar strain ($S_{max}/E_{max}$) was found in BNKT-0.01LF ceramic.

Thermal Distribution Analysis of Triple-Stacked ZnO Varistor (3층으로 적층된 ZnO 바리스터의 열분포 해석)

  • Kyung-Uk Jang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.391-396
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    • 2023
  • Recently, as power and electronic devices have increased in frequency and capacity, it has become a major concern to protect electronic circuits and electronic components used in these devices from abnormal voltages such as various surges and pulse noise. To respond to variously rated voltages applied to power electronic devices, the rated voltages of various varistors can be obtained by controlling the size of internal particles of the varistor or controlling the number of layers of the varistor. During bonding, the problem of unbalanced thermal runaway occurring between the electrode and the varistor interface causes degradation of the varistor and shortens its life of the varistor. In this study, to solve the problem of unbalanced heat distribution of stacked varistors to adjust the operating voltage, the contents of the ZnO-based varistor composition were 96 wt% ZnO, 1 mol% Sb2O3, 1 mol% Bi2O3, 0.5 mol% CoO, 0.5 mol% MnO, and 1 mol% TiO2. A multi-layered ZnO varistor was modeled by bonding a single varistor with a composition in three layers according to the operating voltage. The thermal distribution of the triple-layered ZnO varistor was analyzed for the thermal runaway phenomenon that occurred during varistor operation using the finite element method according to Comsol 5.2.

Synthesis of Methanol and Formaldehyde by Partial Oxidation of Methane over Mixed Oxide Catalysts (복합산화물 촉매 상에서 메탄의 부분산화에 의한 메탄올 및 포름알데히드의 합성)

  • Hahm, Hyun-Sik;Shin, Ki-Seok;Ahn, Sung-Hwan;Kim, Song-Hyoung;Hong, Seok-Young;Park, Hong-Soo
    • Journal of the Korean Applied Science and Technology
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    • v.23 no.3
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    • pp.223-229
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    • 2006
  • Methanol and formaldehyde were produced directly by the partial oxidation of methane over mixed oxide catalysts. The catalysts were composed of Mo and Bi with late-transition metals, such as Mn, Fe, and Co. The reaction was carried out at $450^{\circ}C$, 50 bar in a fixed-bed differential reactor. The prepared catalysts were characterized by $O_2-TPD$ and BET apparatus. Among the catalysts used, the catalyst composed of 1:1:2.5 molar ratio of Mo:Bi:Mn showed the best methane conversion and methanol selectivity. The change in ratio of methane to oxygen affected at the conversion and selectivity, and the most proper ratio was 10:1.5. Methane conversion, methanol and formaldehyde selectivities increased with the surface areas of the catalysts. From the $O_2-TPD$ result, it was found that the oxygen species responsible for this reaction might be the lattice oxygen species desorbed at high temperature around $800^{\circ}C$.

Piezoelectric and Dielectric Characteristics of Low Loss Low Temperature Sintering PMN-PNN-PZT Ceramics with the amount of PNN Substitution (PNN 치환량에 따른 저손실 저온소결 PMN-PNN-PZT 세라믹스의 압전 및 유전특성)

  • Yoo, Ju-Hyun;Kim, Kook-Jin;Jeong, Yeong-Ho;Lee, Su-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.766-770
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    • 2007
  • In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.

CHARACTERISTICS EVALUATION AND GROWTH OF $BI_4GE_3O_{12}$ SINGLE CRYSTAL BY CZOCHRALSKI METHOD

  • Cho, Yun-Ho;Kim, Yong-Kyun;Lee, Woo-Gyo;Kang, Byoung-Hwi;Kim, Jong-Kyung;Lee, Dong-Hoon;Park, Jae-Woo
    • Journal of Radiation Protection and Research
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    • v.34 no.2
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    • pp.83-86
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    • 2009
  • The single crystal scintillator of bismuth germinate ($Bi_4Ge_3O_{12}$:BGO) was successfully grown by the conventional Czochraski technique. The characteristics of the grown BGO were evaluated and presented on the excitation, emission responses and energy spectra of the $\gamma$-rays from $^{241}Am$, $^{133}Ba$, $^{57}Co$, $^{22}Na$, $^{137}Cs$ and $^{54}Mn$ radio-isotopes. The energy resolution of grown BGO, $\Delta$E/E, was estimated to be 12.1% at 662 keV of $\gamma$-ray for $^{137}Cs$ nuclide. Compared to the commercial BGO crystal, we confirmed that the grown BGO has a good performance and is comparable to reference one.

Piezoelectric Characteristics of Low-temperature Sintered PSN-PZT Ceramics as a Function of Zr/Ti Ratio (저온소결한 PSN-PZT 세라믹스의 Zr/Ti 비에 따른 압전특성)

  • 류주현;우원희;오동언;정영호;정광현;류성림
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.12S
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    • pp.1195-1199
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    • 2003
  • In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, dielectric and piezoelectric properties of PSN-PZT[0.91Pb(Sb$\sub$1/2/Nb$\sub$1/2/)$\sub$0.03/(Zr$\sub$0.495/Ti$\sub$0.505/)$\sub$0.97/O$_3$-0.04Pb(Ni$\sub$1/2/W$\sub$1/2/)O$_3$+0.05BiFeO$_3$+0.3wt%MnO$_2$+0.6wt%CuO〕 ceramics were investigated according to Zr/Ti ratio. As Zr/Ti ratio is increased, electromechanical coupling factor(k$\sub$p/) and dielectric constant increased and then decreased after the ratio of Zr/Ti=50/50. Also, mechanical qualify factor(Q$\sub$m/) decreased and then increased after the ratio of Zr/Ti=50/50.

Voltage Enhancement of ZnO Oxide Varistors for Various Y2O3 Doping Compositions

  • Yoon, Jung-Rag;Lee, Chang-Bae;Lee, Kyung-Min;Lee, Heun-Young;Lee, Serk-Won
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.152-155
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    • 2009
  • The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-$Bi_2O_3$-$Sb_2O_3$-CoO- $MnO_2$ -NiO-$Nd_2O_3$ system, were investigated at various $Y_2O_3$ addition concentrations. $Y_2O_3$ played a role in the inhibition of the grain growth. As the $Y_2O_3$ content increased, the average grain size decreased from $6.8{\mu}m$ to $4{\mu}m$, and the varistor voltage($V_{1mA}$) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient ($\alpha$) decreased from 72 to 65 with increasing $Y_2O_3$ amount. On the other hand, the leakage current ($I_L$) increased from 0.2 to 0.9 ${\mu}A$. These results confirmed that doping the varistors with $Y_2O_3$ is a promising production route for production of a higher fine-grained varistor voltage ($V_{1mA}$) which can dramatically reduce the size of the varistors.

Dielectric and Piezoelectric Characteristics of 0.94$(K_{0.5}Na_{0.5})NbO_3$-0.06Ba$(Zr_{0.05}Ti_{0.95})O_3$ Ceramics System According to the variations of sintering aids (소결조재 변화에 따른 0.94$(K_{0.5}Na_{0.5})NbO_3$-0.06Ba$(Zr_{0.05}Ti_{0.95})O_3$ 세라믹스의 유전 및 압전특성)

  • Seo, Byeong-Ho;Kim, Do-Hyung;Lee, Yu-Hyong;Yoo, Ju-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.205-205
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    • 2008
  • PZT 세라믹은 우수한 유전 및 압전특성을 갖고 있어 변압기, 센서 및 엑츄에이터 등에 널리 응용되고 있다. 그러나, 우수한 특성에도 불구하고 PZT세라믹스의 소결시 PbO의 높은 유독성 및 휘발로 인하여 환경오염을 야기 시킨다. 그러므로 PbO로 구성된 세라믹을 대체하기 위한 우수한 압전특성을 가진 비납계 세라믹스 개발이 연구의 주류를 이루고 있다. 그 중 비납계 NKN와 BZT는 대체물질로 많이 관심을 받고 있다. 이는 일반적인 NKN조성은 우수한 압전성과 높은 큐리온도를 가지고 있을 뿐만 아니라, BZT조성의 Zr성분이 큐리온도를 낮추거나 유전특성을 졸게 하여 유전율 곡선을 완화하게 하는 특징이 있다. 하지만 NKN은 $1140^{\circ}C$이상의 소결온도에서 K의 휘발특성으로 인해 소성 후에도 주변의 수분을 흡수하는 조해성이 발생하는 문제가 발생한다. 그래서 본 연구에서는 낮은 온도에서 NKN계 세라믹스의 밀도를 증가시킬 뿐만 아니라, 우수한 유전 및 압전특성을 갖는 세라믹스를 제조하고자 비납계 $0.94(K_{0.5}Na_{0.5})NbO_3-0.06Ba(Zr_{0.05}Ti_{0.95})O_3$ (NKN-BZT)의 조성을 사용하였고 소결조제로는 $MnO_2$, NiO, $Bi_2O_3$, ZnO, $Li_2CO_3$, CuO등을 변화주어 유전 및 압전 특성을 알아보았다.

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Fabrication and Characterization of piezoelectric thick films prepared by Screen Printing Method (Screen Printing법을 이용한 압전 후막의 제조 및 특성연구)

  • 김상종;최형욱;백동수;최지원;윤석진;김현재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.873-876
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    • 2000
  • Characteristics of piezoelectric thick films prepared by screen printing method were investigated. The piezoelectric thick films were printed using Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$system. The lower electrodes were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited with Pt by sputtering on Ag-Pd. The ceramic paste was prepared by mixing powder and binder with various ratios using three roll miller. The fabricated thick films were burned out at 650$^{\circ}C$ and sintered at 950$^{\circ}C$ in the O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20 $\mu\textrm{m}$ and the Ag-Pd electrode acted as a diffusion barrier above 3 $\mu\textrm{m}$ thickness. When the lower electrode Ag-Pd was 6 $\mu\textrm{m}$ and the piezoelectric thick films were sintered by 2nd step (650$^{\circ}C$/20min and 950$^{\circ}C$/1h) using paste mixed Pb(Mg,Nb)O$_3$-Pb(Zr,Ti)O$_3$$.$ MnO$_2$+ Bi$_2$O$_3$. V$_2$O$\_$5/ and binder in the ratio of 70:30, the remnant polarization of thick film was 9.1 ${\mu}$C /cm$^2$.

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Effect of Low-Temperature Sintering on Electrical Properties and Aging Behavior of ZVMNBCD Varistor Ceramics

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.502-508
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    • 2020
  • This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V2O5-MnO2-Nb2O5-Bi2O3-Co3O4-Dy2O3 (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V2O5, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫EB/EB and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 EB/85 ℃/24 h).