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http://dx.doi.org/10.4313/TEEM.2009.10.5.152

Voltage Enhancement of ZnO Oxide Varistors for Various Y2O3 Doping Compositions  

Yoon, Jung-Rag (R&D Center, Samwha Capacitor Co., Ltd.)
Lee, Chang-Bae (R&D Center, Samwha Capacitor Co., Ltd.)
Lee, Kyung-Min (R&D Center, Samwha Capacitor Co., Ltd.)
Lee, Heun-Young (Department of Electrical Engineering, Myongji University)
Lee, Serk-Won (Department of System and Control Engineering, Hoseo University)
Publication Information
Transactions on Electrical and Electronic Materials / v.10, no.5, 2009 , pp. 152-155 More about this Journal
Abstract
The microstructure and the electrical properties of a ZnO varistor, which was composed of a ZnO-$Bi_2O_3$-$Sb_2O_3$-CoO- $MnO_2$ -NiO-$Nd_2O_3$ system, were investigated at various $Y_2O_3$ addition concentrations. $Y_2O_3$ played a role in the inhibition of the grain growth. As the $Y_2O_3$ content increased, the average grain size decreased from $6.8{\mu}m$ to $4{\mu}m$, and the varistor voltage($V_{1mA}$) greatly increased from 275 to 400 V/mm. The nonlinearity coefficient ($\alpha$) decreased from 72 to 65 with increasing $Y_2O_3$ amount. On the other hand, the leakage current ($I_L$) increased from 0.2 to 0.9 ${\mu}A$. These results confirmed that doping the varistors with $Y_2O_3$ is a promising production route for production of a higher fine-grained varistor voltage ($V_{1mA}$) which can dramatically reduce the size of the varistors.
Keywords
Varistor voltage; Grain size; Nonlinearity coefficient; Leakage current;
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