• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.4
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• pp.139-144
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• 2007

[ $BaWO_4$ ] crystals were synthesized using bidentate ligands. The reaction parameters such as the concentration of ligand and molar ratio of $[WO_4^{2-}]/[Ba^{2+}]$ played important roles in the formation of $BaWO_4$ crystals with various morphologies. When TMEDA was used as a ligand, the microrods of $BaWO_4$ crystals with length of $15{\sim}20{\mu}m$ were formed via the self assembly of cross-like plates of 250 nm in width and $2{\sim}3{\mu}m$ in length.

• Journal of the Korean Ceramic Society
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• v.38 no.3
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• pp.280-286
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• 2001

10 이하의 저유전율을 갖는 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스의 미세구조와 고주파 유전특성을 조사하였다. (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 정방정(tetragonal) 구조를 가진다. 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$세라믹스는 BaWO$_4$와 $Mg_2$SiO$_4$의 상들이 공존하는 혼합상을 보였으며, $Mg_2$SiO$_4$가 이차사으로 형성된 것이 관찰되었다. 120$0^{\circ}C$~140$0^{\circ}C$에서 2시간 동안 소결된 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x=0.1~0.9) 세라믹스는 $\varepsilon$$_{r}$=6.37~8.21, Q.f=15000~99422 그리고 $ au$$_{f}$=73.9~48.9 ppm/$^{\circ}C$의 고주파 유전특성을 가졌다. $\tau$$_{f}$를 보정하기 위해, CaTiO$_3$(1,5 wt%)가 (1-x)BaWO$_4$-xMg$_2$SiO$_4$(x$\geq$0.9) 세라믹스에 첨가되었다. 135$0^{\circ}C$에서 2시간 동안 소결된 0.1BaWO$_4$-0.9Mg$_2$SiO$_4$+CaTiO$_3$(5 wt%) 세라믹스는 $\varepsilon$$_{r}$=7.3, Q.f=30532 그리고 $\tau$$_{f}$=-30 ppm/$^{\circ}C$의 고주파 유전특성을 얻었다. 얻었다.

• Journal of the Korean Ceramic Society
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• v.32 no.4
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• pp.448-454
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• 1995

The effect of WO3 addition on microwave dielectric properties of BaTiO3-3{(1-x)TiO2-xWO3} system was studied. Addition of WO3 to this system resulted in the formation of BaWO4 and Ba2Ti9O20 phases. Both the dielectric constant (K) and the temperature coefficientof resonant frequency (Tf) were decreased with the amount of WO3 addition. The value of Q$\times$f0 was increased as the amount of WO3 was increased up to x=0.0275, and then decreased when x exceeded 0.03. At x=0.0275, this ceramic showed excellent microwave proprties of K=34-35, Q$\times$f0=50,000-53,000, and near zero ppm/$^{\circ}C$ of Tf.

• Journal of the Korean institute of surface engineering
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• v.55 no.2
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• pp.96-101
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• 2022

The effects of the growth temperature on the structural, optical, and morphological properties of BaWO₄:Sm³⁺ phosphor thin films were investigated. The BaWO₄:Sm³⁺ thin films were grown on quartz substrates at several growth temperatures by radio-frequency magnetron sputtering. All the thin films crystallized in a tetragonal structure with a main BaWO₄ (112) diffraction peak. The 830 nm-thick BaWO₄:Sm³⁺ thin films grown at 300 ℃ exhibited numerous polygon-shaped particles. The excitation spectra of BaWO₄:Sm³⁺ thin films consisted of a broad excitation band in the 200-270 nm with a maximum at 236 nm due to the O^2--Sm³⁺ charge transfer and two small bands peaked at 402 and 463 nm, respectively. Under 236 nm excitation, the BaWO₄:Sm³⁺ thin films showed an intense red emission peak at 641 nm due to the ⁴G_5/2→⁶H_9/2 transition of Sm³⁺, indicating that the Sm³⁺ ions occupied sites of non-inversion symmetry in the BaWO₄ host lattice. The highest emission intensity was observed for the thin film grown at 300 ℃, with a 51.8% transmittance and 5.09 eV bandgap. The average optical transmittance in the wavelength range of 500-1100 nm was increased from 53.2% at 200 ℃ to 60.8% after growing at 400 ℃. These results suggest that 300 ℃ is the optimum temperature for growing redemitting BaWO₄:Sm³⁺ thin films.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.434-438
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• 2018

The sintering behavior of $BaFe_{12}O_{19}$ with the addition of one and three weight % of $CuWO_4$ as a liquid phase sintering aid is studied. Samples are sintered in the temperature range $900-1250^{\circ}C$ and the effect of $CuWO_4$ addition on density, microstructure, phase composition and magnetic properties is examined. Compared to $BaFe_{12}O_{19}$ with no sintering aid addition, addition of 1 wt % $CuWO_4$ retards densification. Addition of 3 wt % $CuWO_4$ promotes densification at lower sintering temperatures but retards densification at temperatures > $1050^{\circ}C$. Three wt % $CuWO_4$ addition induces the formation of $BaWO_4$ and $Ba_3WFe_2O_9$ secondary phases at temperatures ${\geq}1100^{\circ}C$. Addition of $CuWO_4$ causes a decrease in saturation magnetization, remanent magnetization and coercivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.111-111
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 1993.11a
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• pp.98.1-98
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• 1993

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.335-338
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• 1998

The effect of glass flit addition on microwave dielectric properties of BaTiO$_3$-3TiO$_2$ ceramic was studied. Addition of glass frit to this system obtained sintered sample below sintering temperature 105$0^{\circ}C$. At BaTiO$_3$-3TiO$_2$+ g1ass frit 3wt% + BaWO$_4$6 wt%m, this ceramic showed excellent microwave properties of dielectric constant 34, Q$\times$f 8,100, temperature coefficient of resonant frequency 4 ppm/$^{\circ}C$ .

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.11-18
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• 2021

A novel microwave dielectric composite material for ultra-low temperature co-fired ceramics (ULTCC) with (1-x)BaWO₄-xBaV₂O₆ (x=0.54~0.85) composition was prepared by firing a mixture of BaWO₄ and BaV₂O₆. Shrinkage tests showed that the ceramic composite begins to densify at a temperature as low as 550℃ and can be sintered at 650℃ with 98% of relative density under the influence of BaV₂O₆. X-ray diffraction analysis showed that BaWO₄ and BaV₂O₆ coexisted and no secondary phase was detected in the sintered bodies, implying good chemical compatibility between the two phases. Near-zero temperature coefficients of the resonant frequency (𝛕_f) could be achieved by controlling the relative content of the two phases, due to their positive and negative 𝛕_f values, respectively. With increasing BaV₂O₆ (x from 0.53 to 0.85), the 𝛕_f value of the composites increased from -7.54 to 14.49 ppm/℃, ε_r increased from 10.08 to 11.17 and the quality factor (Q×f value) decreased from 47,661 to 37,131 GHz. The best microwave dielectric properties were obtained for x=0.6 samples with ε_r=10.4, Q×f=44,090 GHz, and 𝛕_f=-2.38 ppm/℃. Chemical compatibility experiments showed the developed composites are compatible with aluminum electrode during co-firing process.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3489-3492
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• 2012