• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.201-205
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• 1994

Glasses being prepared, measurements and investigations of glass transition temperature and IR edge optical absorption have been performed for the compositions of 56ZrF4-14BaF2-6LaF3-4AlF3-(20-x)NaF-xLiF. Values for transition temperature of these glasses decrease in proportion to increasing LiF mol%(x) in the range of 0

• Archives of Pharmacal Research
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• v.18 no.6
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• pp.415-422
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• 1995

Twenty-four flavones were synthesized with various hydroxyl and/or methoxyl groups on A and B rings. Their antimutagenic properties were evaluated against ben:w(a)pyrene (BaP) and a pool of mutagenic urine concentrate (U) using a modified liquid incubation method of Ames test. The tester strain was Salmonella typhimurium TA98+S9 Mix. The antimutagenic activities were calculated by non linear regression analysis and the doses of flavones (in nmoles) required for a 50% reduction of induced revertants with BaP and U were defined as the inhibition doses (TEX>$ID_{508}{\;}and{\;}ID_{508}$ respectively). Seventeen flavones possessed significant antimutagenic activity against BaP. $ID_{508}$ ranged from 15.1 nmoles (F22) to 1000.6 nmoles (F13). Eighteen f1avones showed significant antimutagenic activity against U. $ID_{50U}$ ranged from 23.5 nmoles (F22) to 354.6 nmoles (F3). The 2',3',4'-trihydroxyflavone (F22, $ID_{508}=15.1$ nmoles, $ID_{50U}=23.5$ nmoles) and the 2',3',4',7-tetrahydroxyflavone (F20, $ID_{508}=37.8$ nmoles; $ID_{50U}=62.3$ nmoles) had antimutagenic activities similar to those of chlorophyllin ($ID_{508}=19.6$ nmoles and $ID_{50U}=44.2$ nmoles) and were evaluated against B(alP 7,8-dihydrodiol-9,10-epoxide. Against this last mutagen, the flavones which included three OH in B ring showed the highest activity and this property seemed independent of the substituent groups on A ring.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.484-489
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• 1995

The synthesis of new bismuth-barium containing members of layered cuprates with 2201 type structure was reported. By solution calorimetry the formation enthalpies for Bi2MLaCuO6.5 (M=Ba, Ba0.5Sr0.5, Sr) were obtained. Crucial influence of partial oxygen pressure and size of lanthanoid on stability of layered cuprates was shown. Electronic states of variable valence atoms were studied by voltammetry of solids.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.545-550
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• 2000

In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1719-1723
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• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• Korean Journal of Materials Research
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• v.2 no.5
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• pp.337-342
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• 1992

Spectroscopic diagnostics on reactive plasmas was carried out in a facing target sputtering unit with BaO +12Fe composite targets and 50% $O_2+$ Ar sputter gas. Spectra of rective plasmas were composed of peaks which were assigned to be Ba, B$a^+$, Fe, FeO, F$e^+$, Ar, $Ar^+$, O, $O^+$. As detecting positions in plasmas were far away from targets, the relative peak intensities of the ions and neutral species were decreased, but the relative intensities of the former decreased faster than those of the latter.

• Journal of the Korean Magnetics Society
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• v.13 no.4
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• pp.165-170
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• 2003

M-type hexagonal BaFe$\sub$12/O$\sub$19/ ferrite powder was prepared by sol-gel process. The M-type hexagonal structure with ${\alpha}$ = 5.882 and c = 23.215 ${\AA}$ and its Curie temperature T$\sub$C/ was determined 780${\pm}$3 K. The isomer shifts of ,4f$_2$, 2a. 4f$_1$, 12k, and 2b were indicated 0.26, 0.24, 0.15, 0.25, and 0.24 mm/s, therefore, the valence states of the Fe ions were ferric (Fe$\^$3+/). By the law of approach to saturation (LAS), the effective anisotropy field H$\sub$A/ and crystalline anisotropy constant K$_1$ were estimated. The value of K$_1$ and H$\sub$A/ were K$_1$ = 2.5${\times}$10$\^6/erg/cm^3$ and H$\sub$A/ = 14 kOe, respectively.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.453-458
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• 1994

$(Ba_{0.5}Sr_{0.5)/TiO_3$(BST) thin films were prepared for the application of 256 Mb DRAM by RF magnetron sputtering. The crystallinity of BST thin films increased with increasing deposition tempera lure. The composition of thin films was $(Ba_{0.48}Sr_{0.48)/TiO_{2.93}$ Pt/Ti barrier layer suppressed the diffusion of Si into BST layer. The films showed a dielectric constant of 320 and a dissipation factor of 0.022 at 100 kHz. the change of capacitance of the films with applied voltage was small, showing paraelectric property. The charge storage density and leakage current density were 40fC/$\mu \textrm{m}^{2}$ and 0.8$\mu A/\textrm{cm}^2$, respectively at a field of 0.15 MV/cm. The BST films obtained by RF magnetron sputtering appeared to be potential thin film capacitors for 256 Mb DRAM application.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.