• 대한수학회보
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• 제60권4호
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• pp.1101-1129
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• 2023

In this study we propose a model of optimal retirement, consumption and portfolio choice of an individual agent, which encompasses a large class of the models in the literature, and provide a methodology to solve the model. Different from the traditional approach, we consider the problems before and after retirement simultaneously and identify the difference in the dual value functions as the utility value of lifetime labor. The utility value has an option nature, namely, it is the maximized value of choosing the retirement time optimally and we discover it by solving a variational inequality. Then, we discover the dual value functions by using the utility value. We discover the value function and optimal policies by establishing a duality between the value function and the dual value function. The model and approach offer a significant advantage for computation of optimal policies for a large class of problems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.430-430
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• 2008

Using multi plasma enhanced chemical vapor deposition system (Multi-PECVD), p-a-Si:H deposition layer as a $p^+$ region which was annealed by laser (Q-switched fiber laser, $\lambda$ = 1064 nm) on an n-type single crystalline Si (100) plane circle wafer was prepared as new doping method for single crystalline interdigitated back contact (IBC) solar cells. As lots of earlier studies implemented, most cases dealt with the excimer (excited dimer) laserannealing or crystallization of boron with the ultraviolet wavelength range and $10^{-9}$ sec pulse duration. In this study, the Q-switched fiber laser which has higher power, longer wavelength of infrared range ($\lambda$ = 1064 nm) and longer pulse duration of $10^{-8}$ sec than excimer laser was introduced for uniformly deposited p-a-Si:H layer to be annealed and to make sheet resistance expectable as an important process for IBC solar cell $p^+$ layer on a polished n-type Si circle wafer. A $525{\mu}m$ thick n-type Si semiconductor circle wafer of (100) plane which was dipped in a buffered hydrofluoric acid solution for 30 seconds was mounted on the Multi-PECVD system for p-a-Si:H deposition layer with the ratio of $SiH_4:H_2:B_2H_6$ = 30:120:30, at $200^{\circ}C$, 50 W power, 0.2 Torr pressure for 20 minutes. 15 mm $\times$ 15 mm size laser cut samples were annealed by fiber laser with different sets of power levels and frequencies. By comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 50 mm/s of mark speed, 160 kHz of period, 21 % of power level with continuous wave mode of scanner lens showed the features of small difference of lifetime and lowering sheet resistance than before the fiber laser treatment with not much surface damages. Diode level device was made to confirm these experimental results by measuring C-V, I-V characteristics. Uniform and expectable boron doped layer can play an important role to predict the efficiency during the fabricating process of IBC solar cells.

• 한국해양공학회지
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• 제30권5호
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• pp.356-360
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• 2016

Recently, the lifetime extension of nuclear power plants has been considered. Thus, it is necessary to consider facility safety management and economic management. However, when the bolts in nuclear power plants are replaced and the turbines of nuclear power plant are disassembled, numerous problems are found in relation to stuck bolts in clamping parts. In order to solve these problems, a hybrid vacuum chamber was first designed and manufactured. It can perform arc ion plating and sputtering, which were used to deposit Ti/TiN on an A913 B7 bolt. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were conducted to determine the composition and characteristics of the bolt, and tests were conducted to determine how long the bolt could endure under various conditions in a nuclear power plant. The SEM and XRD results clearly showed a continual and even coating layer. When this TiN-coated bolt is used in a nuclear power plant, the lifetime can be extended compared to a conventional bolt, but it is necessary to determine what additional properties are required.

• 생명과학회지
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• 제33권7호
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• pp.574-585
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• 2023

노인들에서 근감소증은 의료-간호비용 증가의 주요 원인 중 하나가 되고 있다. 한국에서는 근감소증 예방 대책이 일반적으로 특정 질병이 없는 노인들을 대상으로 하지만, 요양원-요양병원에서 집단 거주하는 노인들의 근감소증 대책도 필요하다. 근감소증은 운동량 감소, 단백질 및 영양분(미네랄, 비타민 포함) 섭취 감소, 테스토스테론 및 성장호르몬 변화, 염증 등의 원인으로 발생한다. 분자 생물학적인 정확한 병태생리 기전의 이해가 요구된다. 근감소증은 골다공증, 낙상으로 인한 골절, 치매, 당뇨병, 심혈관 질환 등의 증상을 연결될 수 있다. 비타민 B 패밀리(B1-3, B5-7, B9 및 B12) 결핍을 근감소증 유발의 연구 대상으로 선택한 이유는 다음과 같다. 이는 비타민 B가 에너지 및 단백질 대사에 직접 관여하여 정상적인 신경 기능 유지에 필수적이다. 비타민 B 결핍은 신경-근육 질환, 신경성 질환으로 나타날 수 있으며, 노인성 근감소증과 병행하는 경우가 많다. 노인들은 적정치 이하의 비타민 B 패밀리 섭취, 흡수 장애 및 무식증 문제 등을 겪을 가능성이 높다. 초고령화 사회에서 elderly가 자립적으로 일상생활을 할 수 있는 'health lifetime'을 유지하는 것은 개인의 행복추구와 사회경제적 부담을 줄일수 있는 최고의 목표이다. 본 연구는 근감소증과 관련하여 노인들의 근육량 감소 및 근육 기능 저하를 조절하는 수용성 비타민 B 패밀리의 최신 정보를 제공한다. 또한, 비타민 B 패밀리를 통한 마이오카인에 의한 근감소증의 조절 가능성도 소개한다.

• 한국통신학회논문지
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• 제39B권10호
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• pp.691-699
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• 2014

네트워크 수명을 연장시키기 위해 무선 센서 네트워크에서는 idle listening에 소비되는 에너지를 줄일 수 있는 듀티-사이클 MAC 프로토콜들이 제안되었다. 일반적인 듀티-사이클 MAC 프로토콜에서 각 센서 노드는 잔여 에너지양을 기반으로 듀티-사이클 주기를 계산한다. 그러나 에너지 수집이 가능한 센서 네트워크에서 기존 듀티-사이클 주기는 에너지 수집률이 높은 센서 노드에 불필요한 sleep 지연을 발생시킨다. 따라서 우리는 이전 연구에서 잔여 에너지양과 에너지 수집률을 함께 고려하여 듀티 사이클-주기를 조절하는 듀티-사이클 스케줄링 기법을 제안하였다. 그러나 이러한 듀티-사이클 MAC 프로토콜들은 듀티 사이클-주기 변화에 따른 성능 차이를 고려하지 않고 듀티-사이클 주기를 항상 선형적으로 조절하므로, 응용의 요구사항에 맞는 최적의 듀티 사이클 주기를 얻지 못한다. 본 논문에서는 듀티-사이클 주기를 계산하는 세 가지 기법들을 제안하고 그 결과에 대해 분석한다. 실험을 통해 제안된 기법들이 기존 듀티-사이클 스케줄링 기법에 비해 네트워크 수명, 단대단 패킷 전송 시간과 패킷 전송률을 각각 최대 23%, 44%, 31% 증가시킴을 확인하였다.

• 전기의세계
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• 제28권4호
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• pp.53-63
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• 1979

Interface recombination velocity in $Al_{x}$G $a_{1-x}$ As-GaAs and $Al_{0.85}$, G $a_{0.15}$ As-GaA $s_{1-y}$S $b_{y}$ heterojunction systems is studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n $Al_{x}$G $a_{1-x}$ As-GaA $s_{1-y}$S $b_{y}$-A $l_{x}$G $a_{1-x}$ As double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAs Sb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates. In the AlGaAs system, elastic lattice deformation with effective Poisson ratios .mu.$_{eff}$ (100=0.312 and .mu.$_{eff}$ (111B) =0.190 was observed. The lattice constant $a_{0}$ (A $l_{x}$G $a_{1-x}$ As)=5.6532+0.0084x.angs. was obtained at 300K which is in good Agreement with Vegard's law. In the GaAsSb system, although elastic lattice deformation was observed in (111) B-oriented crystals, misfit dislocations reduced the Poisson ratio to zero in (100)-oriented samples. When $a_{0}$ (GaSb)=6.0959 .angs. was assumed at 300K, both (100) and (111)B oriented GaAsSb layers deviated only slightly from Vegard's law. Both (100) and (111)B zero-mismatch $Al_{0.85}$ G $a_{0.15}$As-GaA $s_{1-y}$S $b_{y}$ layers were grown from melts with a weight ratio of $W_{sb}$ / $W_{Ga}$ =0.13 and a growth temperature of 840 to 820 .deg.C. The corresponding Sb compositions were y=0.015 and 0.024 on (100) and (111)B orientations, respectively. This occurs because of a fortuitous in the Sb distribution coefficient with orientation. Interface recombination velocity was estimated from the dependence of the effective minority carrier lifetime on double-heterojunction spacing, using either optical phase-shift or electroluminescence timedecay techniques. The recombination velocity at a (100) interface was reduced from (2 to 3)*10$^{4}$ for y=0 to (6 to 7)*10$^{3}$ cm/sec for lattice-matched $Al_{0.85}$G $a_{0.15}$As-GaA $s_{0.985}$S $b_{0.015}$ Although this reduction is slightly less than that expected from the exponential relationship between interface recombination velocity and lattice mismatch as found in the AlGaAs-GaAs system, solar cells constructed from such a combination of materials should have an excellent spectral response to photons with energies over the full range from 1.4 to 2.6 eV. Similar measurements on a (111) B oriented lattice-matched heterojunction produced some-what larger interface recombination velocities.ities.ities.s.

• Asian Pacific Journal of Cancer Prevention
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• 제14권3호
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• pp.1865-1877
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• 2013

Vertical variations of polycyclic aromatic hydrocarbon (PAH) concentrations in $PM_{10}$ were investigated in order to assess the factors controlling their behavior in the urban atmosphere of Bangkok City, Thailand. Air samples were collected every three hours for three days at three different levels at Bai-Yok Suit Hotel (site-1 and site-2) and Bai-Yok Sky Hotel (site-3) in February $18^{th}-21^{st}$, 2008. The B[a]P concentration showed a value 0.54 fold, lower than the United Kingdom Expert Panel on Air Quality Standard (UK-EPAQS; i.e. 250 pg $m^{-3}$) at the top level. In contrast, the B[a]P concentrations exhibited, at the ground and middle level, values 1.50 and 1.43 times higher than the UK-EPAQS standard respectively. PAHs displayed a diurnal variation with maximums at night time because of the traffic rush hour coupled with lower nocturnal mixing layer, and the decreased wind speed, which consequently stabilized nocturnal boundary layer and thus enhanced the PAH contents around midnight. By applying Nielsen's technique, the estimated traffic contributions at Site-3 were higher than those of Site-1: about 10% and 22% for Method 1 and Method 2 respectively. These results reflect the more complicated emission sources of PAHs at ground level in comparison with those of higher altitudes. The average values of incremental individual lifetime cancer risk (ILCR) for all sampling sites fell within the range of $10^{-7}-10^{-6}$, being close to the acceptable risk level ($10^{-6}$) but much lower than the priority risk level ($10^{-4}$).

• 한국전기전자재료학회논문지
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• 제13권8호
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• pp.694-699
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• 2000

S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

• International Journal of Ocean System Engineering
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• 제2권4호
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• pp.209-213
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• 2012

Recently, the fuel using in the diesel engines of marine ships has been changed to a low quality of heavy oil because of the steady increase in the price of oil. Therefore, the wear and corrosion in all parts of the engine such as the cylinder liner, piston crown, and spindle and seat ring of exhaust valves has correspondingly increased. The repair welding of a piston crown is a unique method for prolonging its lifetime from an economic point of view. In this case, filler metals with a high corrosion and wear resistance are mainly being used for repair welding. However, often at a job site on a ship, a piston crown is actually welded with mild filler metals. Therefore, in this study, mild filler metals such as CSF350H, E8000B2, and 435 were welded to SS401 steel as the base metal, and the corrosion properties of the weld metals with and without post weld heat treatment were investigated using some electrochemical methods in a 0.1% $H_2SO_4$ solution. The weld metal welded with CSF350H filler metal exhibited the best corrosion resistance among these filler metals, irrespective of the heat treatment. However, the weld metal zones of the E8000B2 and 435 filler metals exhibited better and worse corrosion resistance with the heat treatment, respectively. As a result, it is suggested that in the case of repair welding with CSF350H and 435 filler metals, no heat treatment is advisable, while heat treatment is desirable if E8000B2filler metal is used with repair welding.

• 대한기계학회논문집
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• 제18권7호
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• pp.1713-1721
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• 1994

Intermetallic-matrix composites(IMCs) have the potential of combing matrix properties of oxidation resistance and high temperature stability with reinforcement properties of high specific strength and modulus. One of the major limiting factors for successful applications of these composite at high temperatures is the formation of interfacial reactions between matrix and ceramic reinforcement during composite process and during service. The purpose of the present investigation is to develop a better understanding of the nature of creep fracture mechanisms in a $Ni_{3}Al$ composite reinforced with both $TiB_{2}$ and SiC particulates. Emphasis is placed in the roles of the products of the reactions in determining the creep lifetime of the composite. In the present study, creep rupture specimens were tested under constant ranging from 180 to 350 MPa in vacuum at $760^{\cric}C$. The experimental data reveal that the stress exponent for power law creep for the composite is 3.5, a value close to that for unreinforced $Ni_{3}Al$. The microstructural observations reveal that most of the cavities lie on the grain boundaries of the $Ni_{3}Al$ matrix as opposed to the large $TiB_{2}/Ni_{3}Al$ interfaces, suggesting that cavities nucleate at fine carbides that lie in the $Ni_{3}Al$ grain boundaries as a result of the decomposition of the $SiC_{p}$. This observation accounts for the longer rupture times for the monolicthic $Ni_{3}Al$ as compared to those for the $Ni_{3}Al/SiC_{p}/TiB_{2} IMC$. Finally, it is suggested that creep deformation in matrix appears to dominate the rupture process for monolithic $Ni_{3}Al$, whereas growth and coalescence of cavities appears to dominate the rupture process for the composite.