• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.886-888
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• 1998

By irradiating photoresist on Si or glass with $Ar^+$ (${\lambda}$=514 nm, CW) and Nd:YAG (${\lambda}$=266 and 532nm, pulse) laser beam, the photoresist was etched masklessly in air. Using a fourth harmonic Nd:YAG laser beam, the etching threshold of energy fluence was $25\;J/cm^2$ and the damage of substrate was appeared over $40\;J/cm^2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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• pp.889-891
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• 1998

Copper films have been deposited on glass substrate via a thermal decomposition of copper(II) formate using a focused $Ar^+$ laser emitting at 514 nm. The growth kinetics of these Cu films was investigated as a function of laser power and scan speed which varied in the range of 70-150 mW and 0.1-20 mm/s, respectively. The resistivity of the copper films was a factor of about 20 higher than· that of bulk value, but the resistivity decreased due to changes in morphology and porosity of the deposit after annealing at $300^{\circ}C$, 5 min. and was about $10{\mu}{\Omega}cm$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.79-82
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• 1989

We studied the epitaxial growth of GaAs/GaAs and GaAs/Si by Laser CVD with 193nm ArF pulsed excimer laser. The source gases of TMGa and AsC13 or TMGa-TMAs adducts are mixed with H2, and photolyzed above the substrate which is heated up to around 300$^{\circ}C$. Then the photolyzed atoms are deposited on the silicon or GaAs substrate. The deposited films are analyzed with ESKA depth profiling and X-ray differaction method, which shows that the films on Si and GaAs are stoichiometric and crystalized at such a low temperature. We show a clear evidence for the epitaxial growth of GaAs on Si or GaAs on GaAs at low temperature by excimer laser CVD.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 추계학술대회 논문집
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• pp.1080-1083
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• 1997

Micro-stereolithography is a newly proposed technology as a means that can fabricate 3D micro-structures of free form. It makes a 3D structure by dividing the shape into many slices of relevant thickness along honzontal surfaces, hardening each layer of slice with a laser, and stacking them up to a des~red shape. Scale effect becomes important in this micro-fabrication process, d~fferently from the conventional stereolithography. To realize this micro-stereolithography technology, we developed an equipment using Ar+ laser, xyz stages, controllers and all the optic devices. Using the equipment, a number of micro-structures were successfully fabricated including a winecup of several tens of micrometers.

• 전자공학회논문지A
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• 제33A권6호
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• pp.108-113
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• 1996

Periodic gratings for 1.55$\mu$m distributed feedback laser diode (DFB LD) have been fabricated by a holographic interference exposure system using an etalon stabilized Ar ion laser. We obtain a good development condition at developer concentration of 65% and obtain etching rate of 1000$\AA$/min at 20.deg. C by the mixed solution HBr:HNO$_{3}$:H$_{2}$O(1:1:10 in volume ratio). We obtain good first order grating with period of 2400${\AA}[\pm}2{\AA}$ at etching time of 45 sec from grating period and diffraction efficiency measurement, and SEM observation of grating fabricated on InP substrate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.336-338
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• 1997

The anneal behavior of ArF excimer Laser CVD SiON films has been studied using FT-IR absorption spectroscopy. The anneal temperature range was $400{\sim}800^{\circ}C$ Abundant hydrogen effusion from thes layers was observed as anneal temperature increased. The coexistence of both Si-H am N-H bonds offers the possibility for cross linking am evidence for the occurrence of cross lingking was found in the IR spectrum. The electrical properties were also obtained that tire films have low leakage currents am good TZDB properties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 대한전기학회논문지
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• 제35권9호
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• pp.375-379
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• 1986

The HCP(Hypocycloidal Pinch) device for plasma focus was modified for a pumping source of the dye laser, and the spectral distribution and time behavior of its light pulses were investigated by using a UV spectrometer, 70 MHz CRO and Si-PIN photodiode detector. An array of multiple stages of HCP and narrower electrode gaps were chosen in order to make a more uniform discharge along the HCP axis. The possible spectral range for the pumping of dye laser is 360-620nm, when the HCP is operated at 5-8kv of apllied voltage and 50-150Torr of Ar fill gas pressure. The rise-time and FWHM of light pulses from the HCP are 5us and 30-50us respectively when it is operated under the same conditions as above.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2553-2555
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• 1998

A single crystal Mn-Zn ferrite was directly etched by focused $Ar^+$ laser beam in $CCl_2F_2$ gas atmosphere. AES has been performed for locally investigating the surface composition of an etched layer. MnCl, ZnCl being created after the substrate and $CCl_2F_2$ chemically reacting was remained in the vicinity of laser irradiation area because of their low vapor pressure. Various patterns using computer were formed on the substrate. The etched grooves and patterned shapes were observed by SEM measurement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.248-250
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• 1996

VTR 자기헤드의 핵심소재로 사용되는 ferrite는 VTR 의 주기능인 영상의 기록 및 재생역할에 가장 중요한 소재이다. 이러한 종류의 head는 지금까지 mask wet chemical etching과 mechanical Process 에 의해 제작 되어왔다. 그러나 기록용량의 중가로 자기장치의 recording density를 높일것이 요구됨에 따라 자기헤드의 gap width를 줄일 필요가 있게 되었다. 본 연구는 mask와 photoresist를 사용하지 않고 ferrite를 직접 미세가공 하는 laser-induced wet etching을 이용하여 자기헤드의 기록용량을 높이고자 하였다. $Ar^+$ laser ( 파장 514 nm )를 빔 확장기와 렌즈를 사용 하여 직경 $1.8{\mu}m$ 로 집속하고, $100{\sim}500\;mW$의 출력 변화를 주어 실험을 하였다. 인산 수용액 (45, 65, 85 %)을 etchant로 사용하여 $5{\sim}30{\mu}m/sec$의 주사속도로 etching 하여, 미세선폭과 high aspect ratio를 갖는 groove를 얻을 수 있었다.