• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.51-54
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• 2008

In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.

• 한국진공학회지
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• 제18권2호
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• pp.141-146
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• 2009

rf magnetron sputtering 법을 이용하여 Pt/Ti/$SiO_2$/Si 기판 위에 buffer layer인 $TiO_2$ 층을 증착한 후 PLZT 강유전체 박막을 증착하였다. PLZT 박막 증착 시 가스 분압비가 박막의 특성에 미치는 영향을 알아보기 위해 Ar/$O_2$ 분압비를 각각 27/1.5 sccm, 23/5.5 sccm, 21/7.5 sccm, 19/9.5 sccm로 변화시키면서 박막을 증착하였다. 이들 박막의 구조적인 특성을 분석하기 위해 X-선 회절법을 사용하였으며 FE-SEM을 이용하여 입자상을 관찰하였다. 또한 박막의 유전특성을 분석하기 위해 Precision LC를 이용하여 이력곡선, 잔류분극, 누설전류를 측정하였다. 산소 분압이 높아질수록 박막의 결정성 및 치밀성이 저하되었으며, (110) 방향에서 (111) 방향으로 우선배향성이 변화하는 것을 확인하였다. 산소 분압비의 변화는 박막 표면 및 강유전 특성에 영향을 미치는 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.445-448
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• 2011

In this study, the etching characteristics of $Al_2O_3$ thin films were investigated using an ICP (inductively coupled plasma) of $BCl_3$/Ar gas mixture. The etch rate of $Al_2O_3$ thin films as well as the $SiO_2/Al_2O_3$ etch selectivity were measured as functions of $BCl_3$/Ar mixing ratio (0~100% Ar) at a constant gas pressure (10 mTorr), total gas flow rate (40 sccm), input power (800 W) and bias power (100 W). The behavior of the $Al_2O_3$ etch rate was shown to be quite typical for ion-assisted etch processes with a dominant chemical etch pathway. To analyze the etching mechanism using DLP (double langmuir probe), OES (optical emission spectroscopy) and surface analysis using XPS (x-ray photoelectron spectroscopy) were carried out.

• 한국세라믹학회지
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• 제32권9호
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• pp.1085-1091
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• 1995

Molybdenum disilicide (MoSi2) was synthesized from Mo, MoO3, Si and Al powders by self-propagating high temperature synthesis (SHS). The effect of processing parameters such as Mo/MoO3 molar ratio, Ar gas pressure in the reactor and pressing pressure of compacts in synthesis of MoSi2 were investigated. h-MoSi2 was transformed into t-MoSi2 with increasing the Mo/MoO3 mole ratio, and only t-MoSi2 phase was identified above 3.5 : 1 (molar ratio). The synthesized phases did not change with the variation of Ar gas pressure and pressing pressure of compacts. It was found that the combustion temperature was above 2,50$0^{\circ}C$. The products were separated into MoSi2 (s) and $\alpha$-Al2O3 by the difference of their specific grativities. Bending strength, hardness and density of sintered specimen exhibited 82 MPa, 5.368 GPa and 5.43 g/㎤, respectively.

• Bulletin of the Korean Chemical Society
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• 제18권10호
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• pp.1071-1075
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• 1997

Detonation characteristics of acetylene were studied behind reflected shock waves in the temperature range 800-1350 K by monitoring OH emission and pressure profiles. For a comprehensive measurement of ignition delay time, the mixture composition was varied in a wide range of Ar mole % was varied from 0.625 to 2.5 in stoichiometric ratio of C2H2-O2-Ar. A computer simulation study was also performed to elucidate the important elementary steps determining ignition behavior. The 33-reaction mechanism provides a good agreement in delay time between the observed and the calculated ones.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.178-181
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• 2003

In this work, we etched PZT films with various additive gases ($O_2$ and Ar) in $Cl_2/CF_4$ plasmas, while mixing ratio was fixed at 8/2. After the etching, the plasma induced damages are characterized in terms of hysteresis curves, leakage current, retention properties, and switching polarization. When the electrical properties of PZT etched in $O_2$ or Ar added $Cl_2/CF_4$ were compared, the value of remanent polarization in $O_2$ added $Cl_2/CF_4$ plasma is higher than that in Ar. added plasma. The maximum etch rate of the PZT thin films was 145 nm/min for 30% Ar added $Cl_2/CF_4$ gas having mixing ratio of 8/2 and 110 nm/min for 10% $O_2$ added to that same gas mixture. In order to recover the ferroelectic properties of the PZT thin films after etching, we annealed the etched PZT thin films at $550^{\circ}C$ in an $O_2$ atmosphere for 10 min. From the hysteresis curves, leakage current, retention property and switching polarization, the reduction of the etching damage and the recovery via the annealing was turned out to be more effective when $O_2$ was added to $Cl_2/CF_4$ than Ar. X-ray diffraction (XRD) showed that the structural damage was lower when $O_2$ was added to $Cl_2/CF_4$. And the improvement in the ferroelectric properties of the annealed samples was consistent with the increased intensities of the (100) and the (200) PZT peaks.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.103-105
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• 2001

ZnO thin films on glass substrate were deposited by RF sputter with various $Ar/O_2$ gas ratio. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD(x-ray diffractometer), and SEM (scanning electron microscopy) analyses. The facing targets sputtering system can deposit thin film at plasma free condition and change the deposition condition in wide range. We suggested that a very suitable $Ar/O_2$ gas of ratio should be 50/50 for preparation of high quality ZnO films with good C-axis orientation.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• 전자공학회논문지D
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• 제36D권4호
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• pp.56-62
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• 1999

본 연구에서, (Ba,Sr)TiO\sub 3\ 박막이 rf 전력, dc 바이어스 전압 및 반응로 압력과 같은 식각 공정 변수를 변화하여 ICP에서 Cl\sub 2\Ar 가스 혼합비에 따라 식각되었다. 0.2의 Cl\sub 2\/(Cl\sub 2\+Ar) 가스 혼합비, 600 W의 rf 전력,250 V의 dc 바이어스 전압 및 5 mTorr의 반응로 압력의 공정 조건하에서 식각율은 56nm/min이었다. 이때 Pt, SiO\sub 2\ 막에 대한 BST 박막의 식각 선택비는 각각 0.52, 0.43이었다. 식각된 BST 박막의 표면반응은 XPS로 분석하였다. Ba는 BaCl\sub 2\ 와 같은 화학적인 반응과 물리적인 스퍼터링에 의해 제거되었다. Sr의 제거는 Sr과 Cl의 화확적인 반응보다 Ar 이온 충격이 더 효과적이었다. Ti는 TiCl\sub 4\ 와 같은 화학반응에 의해 용이하게 제거되었다. XPS 분석 결과를 비교하기 위하여 SIMS의 분석을 수행하여 비교한 결과 동일한 결론을 도출하였다.