• Transactions of the Korean Society of Automotive Engineers
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• v.15 no.4
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• pp.146-153
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• 2007

The detailed chemistry with reaction mechanism of GRI 2.11, which consists of 49 species and 279 elementary reactions, have been numerically conducted to investigate the flame structure and NO emission characteristics in a non-premixed counterflow flame of blended fuel of $H_2/CO_2/Ar$. The combination of $H_2,\;CO_2$, and Ar as fuel is selected to clearly display the contribution of hydrocarbon products to flame structure and NO emission characteristics due to the breakdown of $CO_2$. Radiative heat loss term is involved to correctly describe the flame dynamics especially at low strain rates. All mechanisms including thermal, $NO_2,\;N_2O$, and Fenimore are also taken into account to separately evaluate the effects of $CO_2$ addition on NO emission characteristics. The increase of added $CO_2$ quantity causes flame temperature to fall since at high strain rates diluent effect is prevailing and at low strain rates the breakdown of $CO_2$ produces relatively populous hydrocarbon products and thus the existence of hydrocarbon products inhibits chain branching. It is also found that the ratio of the contribution by Fenimore mechanism to that by thermal mechanism in the total mole production rate becomes much larger with increase in the $CO_2$ quantity and strain rate, even though the absolute quantity of NO production is deceased. Consequently, as strain rate and $CO_2$ quantity increase, NO production by Fenimore mechanism is remarkably augmented.

• Journal of Korean Ophthalmic Optics Society
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• v.11 no.2
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• pp.85-89
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• 2006

To research of the improved mechanical properties of materials for spectacle lens cutting, SiC and TiC were used as the main powder. Also, $Al_2O_3$ and $Y_2O_3$ was included as a sintering additive. The weight ratio of the alumina($Al_2O_3$) to yttria($Y_2O_3$) was set to 1:1. The materials for spectacle lens cutting were fabricated by hot-pressing at $1810^{\circ}C$ for 1h and subsequently annealed at $1860^{\circ}C$ for 3, 6 and 12h to initiated grain growth. The longer annealing time is, the bigger the grain size is. The microstructures were observed by scanning electron microscopy (SEM). The SEM images were quantitatively analyzed by image analysis (Image-Pro Plus, Media Cybernetics, Maryland, U.S.A.). Crack deflection by elongated SiC grains was most frequently observed as the dominant toughening mechanism. Crack deflection was generally observed for elongated SiC grains with aspect ratio(AR) > 2.5 and grain thickness < $2.3{\mu}m$. Crack bridging was also observed as one of the operating toughness mechanism.

• Current Photovoltaic Research
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• v.3 no.1
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• pp.32-38
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• 2015

CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.

• Elastomers and Composites
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• v.8 no.1
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• pp.33-51
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• 1973

We have studied the blending effects of Diene NF 35 R and Alfin 1530 at various blending ratios, 100/0, 70/30, 50/50, 30/70, 0/100, and of carbon black HAF-HS and ISAF-HS at various compounding ratios of 45 PHR, 55 PHR, 65 PHR, for tyre tread rubber. As the results, it was found that; 1. For tyre tread rubber, as the blending ratio, AR 1530/Diene NF 35R, indicated 70/30, the physical properties we examined were most excellent. 2. Excellent result was obtained in the case of carbon black compounding ratio of 55 PHR. The compounding of ISAF-HS made better result than that of HAF-HS for tensile strength, but the compounding of HAF-HS made better result than that of ISAF-HS for tearing strength and best result for abrasion quantity. 3. Heat buildup obtained from compounding carbon black HAF-HS indicated low temperature than that from compounding carbon black HAP-HS. As the compounding amount of carbon black increased, and as the blending amount of AR 1530 decreased, the heat buildup increased. 4. Carbon black was more efficient to AR 1630 than io Diene NF 35 R. 5. In the physical properties, mooney viscosity and mooney scorch time, as the compounding amount of carbon black increased, the values of mooney viscosity increased, but that of mooney scorch time had a max. point at the compoundiug amount of carbon black, 55 PHR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.33-36
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• 1999

In this paper, $Ba_{0.5}$Sr$_{0.5}$TiO$_3$ thin-films were prepared on Pt/Ti/Si0$_2$/Si substrates by RF magnetron sp-uttering method. We investigated electric and dielectric properties of BST thin-films with various ann-ealing temperature using in-sute RTA. Deposition conditions of BST films were set substrate temperat-ure, 30$0^{\circ}C$ and working gas ratio, Ar:O$_2$=90:10. After BST films deposited, we fabricated a capacitor of MIM structure with Al top electrode for measurement. Post-annealing using RTA performed at 40$0^{\circ}C$, $600^{\circ}C$, 80$0^{\circ}C$ for 60 sec, respectively. Also we exacted crystallization and composition of BST thin-films by XRD analysis. In measurement result, this capacitors showed a dielectric constant of about 200 at 1MHz and leakage current density of 5$\times$10$^{-8}$ A/$\textrm{cm}^2$ at 1.5V Microstructure of BST thin-films exhibited effective quality in low-temperature annealed 71ms than high-temperature annealed 71ms.s.s.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1083-1087
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• 1999

Microstructures and the gas-sensing characteristics of the $\textrm{SnO}_2$ thin films were studied, which were deposited at various conditions (rf power, sample temperature, $\textrm{O}_2$/Ar ratio) by the rf magnetron sputtering. As a result, six typical microstructures were derived, such as amorphous(A), amorphous mixed with polycrystalline grains (A+P), polycrystalline with random crystalographic orientation (P), fine columnar (FC), coarse columnar (CC) and Zone T (T) with dense fiberous structure. Typically, A, A+ P, and P structures were formed when no $\textrm{O}_2$ was added to the sputter gas, whereas FC, CC, and T structures were obtained when $\textrm{O}_2$ was added. The A structure formed at low rf power and low temperature, the A+P at high rf power and low temperature, and the P at high rf power and high temperature. The FC structure was obtained at low rf power and low temperature. the CC at low rf power and high temperature, and the T at high rf power and low temperature. Results of the gas-sensing test of the sensor chips fabricated from the typical films indicated that the fine columnar microstructure shows the highest sensitivity both at $300^{\circ}C$ and $400^{\circ}C$. It was proposed that this is due to the high specific surface area of the micro-columns.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.98-104
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• 2006

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.