• Proceedings of the Korean Institute of Surface Engineering Conference
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.112-113
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• 2014

The submicron-rods of $Cu_2O$ with diameters of 100-700 nm and lengths of $2-8{\mu}m$ were synthesized by radio frequency magnetron sputtering. The abundance of Cu species, which is modulated by the $Ar/O_2$ ratio during the sputtering process affect directly to the growths of the $Cu_2O$ branches on the bodies of the submicron-rods. Transmission electron microscopy and elemental mapping reveal that metallic Cu are existed on the heads of the $Cu_2O$ rods. The growth rate, catalyst phase and shape reveal that vapor-quasiliquid-solid was the growth mechanism of the formations of those structures.

• Journal of the Korean Ceramic Society
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• 제32권12호
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• pp.1392-1400
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• 1995

WC-10wt%Co-Al2O3 ceramic composites, using both the SHS (Self-propagating High Temperature Synthesis) synthesized WC powder method and commercial WC powder, were prepared by varing WC-Co/Al2O3 vol% ratio and sintering temperature (1350℃∼1650℃) for 1 hr in Ar atmosphere. Mechanical characterization has been investigated by Instron meterial testing system and Vicker's hardness test. Compositional and structural chracterizations were carried out by energy-dispersive analysis of X-ray (EDAX) data and scanning electron microscope (SEM). Electrical characterization was carried out by the electrical resistivity measurement using 4-point probe method. As sintering period increased and Al2O3 contents decreased in WC-10wt%Co-Al2O3 ceramic composite, shrinkage and relative density increased, resulting in maximum values at 1600℃. Also the major matrix phase changed with increasing Al2O3 content from 0 to 100 vol%. It was also identified by SEM, EDAX, and electrical resistivity measurement. Based on the results of analysis of flexural strength, toughness and hardness, the mechanical properties of WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were better than those WC-10wt%Co-Al2O3 ceramic composites using commercial WC powder because WC-10wt%Co-Al2O3 ceramic composites using the SHS synthesized WC powder were sintered very well due to small initial particle size. By the addition of 40 vol% Al2O3 [60(WC=10wt%Co)-40Al2O3], it was possible to obtain a proper candidate as a superalloy.

• Proceedings of the KIEE Conference
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1250_1251
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• 2009

The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power, respectively. Also, The capacitance of SBN thin films were increased with the increase of deposition temperature.

• Korean Journal of Materials Research
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• 제12권4호
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• pp.240-247
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• 2002

Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of $300^{\circ}C$ and the Ar:$O_2$ratio of 7:3 was 700mA/g.

• Journal of the Korean Ceramic Society
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• 제43권1호
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• pp.38-41
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• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• Journal of the Korean Magnetics Society
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• 제11권5호
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• pp.196-201
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• 2001

The dependence of CoFe interfacial layer thickness and plasma oxidation condition on tunneling magnetoresistance (TMR) in Ta/NiFe/FeMn/NiFe/Al$_2$O$_3$/NiFe/Ta tunnel junctions was investigated. As the CoFe layer thickness increases, TMR ratio rapidly increases to 13.7 % and decreases with further increase of the CoFe layer thickness. The increase of TMR with the CoFe thickness up to 25 was thought to be due mails to the high spin-polarization of CoFe. The maximum MR of 15.3% was obtained in the Si(100)/Ta(50 )/NiFe(60 )/FeMn(250 )/NiFe(70 )/Al$_2$O$_3$/NiFe(150 )/Ta(50 ) magnetic tunnel junction with a 16 Al oxidized for 40 sec using a Ar/O$_2$ (1:4) mixture gas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제27권12호
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• pp.831-836
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• 2014

One-dimensional (1D) photonic crystals (PCs) were prepared by $TeO_x(2<x<3)/SiO_2$ with the difference refractive index, and fabricated by sputtering technique from a $TeO_2$ and $SiO_2$ target. The $TeO_x$(2$Ar:O_2=40:10$). A 10-pair $TeO_x(2<x<3)/SiO_2$ 1D PCs were fabricated with the structure parameters of filling factor=0.5185, and period=410 nm. The properties of 1D PCs with and without a defect layer were evaluated by UV-VIS-NIR. A normal mode 1D PC have a photonic band gap (PBG) in the near infrared (NIR) region from 1,203 to 1,421 nm. In the case of 1D PC containing a defect layer, a defect level appears at 1,291 nm. The measured transmittance (T) spectra are nearly corresponding to calculated results. After He-Cd laser exposure, the defect level is shifted from 1,291 nm to 1,304 nm.

• Journal of the Korean Magnetics Society
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• 제5권1호
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• pp.42-47
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• 1995

FeN thin films for inductive recording heads were sputter deposited using RF diode sputtering mehtod from a pure iron target onto 7059 glass substrates, and their magnetic properties were measured. The magnetic properties were greatly affected by film thickness, gas pressure, sputter power and flow ratio of $N_{2}$ to Ar. Single layer FeN films with their thickness varied from $1,000\;{\AA}$ to $6,000\;{\AA}$ were doposited. 800 W sputter power, 3 mT gas pressure, $N_{2}$ to Ar flow ratio of 6.6 : 100 were the sputtering conditions. Up to 7 layers of FeN films having total thickness of $6,000\;{\AA}$ were deposited using $SiO_{2}$ of $30\;{\AA}$ thickness as intermediate layers and their coercivity and saturation magnetization were measured. The sputtering conditions were the same as those in the single layer films. Easy axis coercivity of the single layer FeN films gradually decreased as their thickness was increased, but for the films with their thicknesses above $3,000\;{\AA}$, the coercivity changed very little. As the number of the FeN layers were increased, the coercivity decreased We estimated the grain size of FeN films from the FWHM (Full Width at Half Maximum) of X-ray diffraction peaks. The grain size steadily decreased from about $200\;{\AA}$ to $120\;{\AA}$ as the number of layers were increased. Minimum hard axis coercivity of 0.4 Oe was obtained when the number of layers was four. Maximum relative permeability was 2,900 when the number of layers was three. The cut off frequeocy of the multilayer films were above 100 MHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• 제54권9호
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• pp.397-402
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• 2005

The ($Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode (Pt/TiN/SiO$_{2}$Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O$_{2}$ ratio were 140(W) and 80/20, respectively. Deposition rate of SCT thin film was about $18.75{\AA}$/min. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over $15[mol\%]$. The capacitance characteristics had a stable value within $\pm4[\%]$ in temperature ranges of $-80\~+90[^{\circ}C]$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

• Proceedings of the KIEE Conference
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1496-1498
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• 2003

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].