• Title/Summary/Keyword: $Al_O_3$magnetron sputtering

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Structure, Optical and Electrical Properties of AI-doped ZnO Thin Film Grown in Hydrogen-Incorporated Sputtering Gas

  • Kim, Kyoo-Ho;Wibowo, Rachmat Adhi;Munir, Badrul
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.154-159
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    • 2005
  • Low RF power density was used for preparing transparent conducting AI-doped ZnO (AZO) thin films by RF Magnetron Sputtering on Corning 1737 glass. The dependence of films' structural, optical and electrical properties on sputtering gas, film's thickness and substrate temperature were investigated. Low percent of incorporated H2 in Ar sputtering gas has proven to reduce film's resistivity and sheet resistance as low as $4.1\times10^{-3}{\Omega}.cm$. It also formed new preferred peaks orientation of (101) and (100) which indicated that the c-axis of AZO films was parallel to the substrate. From UN-VIS-NIR Spectrophotometer analysis, it further showed high optical transmittance at about $\~ 90\%$ at visible light spectra (400-700nm).

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Syntheses and properties of Ti2AlN MAX-phase films

  • Zhang, Tengfei;Myoung, Hee-bok;Shin, Dong-woo;Kim, Kwang Ho
    • Journal of Ceramic Processing Research
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    • v.13 no.spc1
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    • pp.149-153
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    • 2012
  • Ti2AlN MAX-phase films were synthesized through the post-annealing process of as-deposited Ti-Al-N films. Near amorphous or quasi-crystalline ternary Ti-Al-N films were deposited on Si and Al2O3 substrates by sputtering a Ti2AlN MAX-phase target at room temperature, 300 ℃ and 450 ℃, respectively. A vacuum annealing of those films at 800 ℃ for 1 hour changed those films to crystalline Ti2AlN MAX-phase. The polycrystalline Ti2AlN MAX-phase films exhibited very excellent oxidation resistance due to its characteristics microstructure (nanolaminates), which has potential applications for high-temperature protective coatings. The microstructure and composition of Ti2AlN MAX-phase films were investigated using with a variety of characterization tools.

Thin film characteristics variation of static deposition and dynamic deposition by bipolar pulsed DC magnetron sputtering (Bipolar pulsed DC magnetron sputtering에서 정적 증착과 동적 증착에 의한 박막 특성 변화)

  • Yang, Won-Gyun;Ju, Jeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2009.05a
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    • pp.149-149
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    • 2009
  • 실제 산업에서 가장 많이 사용하고 있는 in-line type system에서 Al-doped ZnO (AZO) 막을 bipolar pulsed DC sputtering을 이용해 증착하였다. 약 30 nm/sec의 속도로 기판을 타겟 좌우로 swing 하면서 동적 증착 공정을 한 AZO 박막의 columnar structure가 정적 증착일 때와 다른 형태의 zigzag-type columnar structure가 형성되었다. 투명전도막의 가장 중요한 특성인 비저항과 투과도가 동적 증착 공정일 때의 박막과 정적 증착 공정일 때의 박막이 각각 $2.5{\times}10^{-3}{\Omega}{\cdot}cm$, 78.5%와 $1.65{\times}10^{-3}{\Omega}{\cdot}cm$, 83.9% 였다. 이렇게 성장하는 막의 구조 형태에 따라 달라지는 특성 변화는 양산하는 현장에서 매우 중요한 것이며, 동적 증착 공정에서의 박막 특성 개선에 정적 증착 공정과는 다른 방법의 연구가 필요할 것이다.

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The non-uniformity study of AZO thin films by pulse magnetron sputtering for large area (대면적 펄스 마그네트론 스퍼터링에 의한 AZO 박막의 균일도 문제)

  • Yang, Won-Gyun;Ju, Jeong-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2008.11a
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    • pp.23-24
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    • 2008
  • Bipolar pulsed dc magnetron sputtering을 이용하여 태양전지의 투명 전도막용으로 유리기판 위에 Al doped ZnO (AZO) 박막을 증착하였다. $400{\times}400\;mm$의 대면적 기판에 증착하기 위해서 $5{\times}25$ inch 대형 사각 AZO target (Al 2 wt%)을 사용했고, $50{\sim}250\;kHz$의 bipolar pulse를 인가하였다. 실제로는 $400{\times}400\;mm$ 면적의 기판에 slide glass 16개를 사용했으며, 약 700 nm 두께에서 두께와 투과도, 비저항의 균일도를 평가하였다. Bipolar pulse의 주파수 150 kHz일 때, 가장 우수한 특성을 갖는 AZO가 증착되었으며, $2.13{\times}10^{-3}{\Omega}{\cdot}cm$의 비저항에 가시광선 영역에서 82%의 투과율을 보였다. 또한, $400{\times}400\;mm$ 대면적 기판에서의 두께와 투과도, 비저항의 불균일도는 각각 5%, 1%, 9% 였다.

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Electrical and structural characteristics of AZO thin films deposited by reactive sputtering (Reactive sputtering 법으로 증착된 AZO 박막의 전기적 및 구조적 특성)

  • Heo, Ju-Hee;Lee, Yu-Lim;Lee, Kyu-Mann
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.1
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    • pp.33-38
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    • 2009
  • We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

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Nano-Granular Co-Fe-AI-O Soft Ferromagnetic Thin Films for GHz Magnetic Device Applications

  • Sohn, Jae-Cheon;Byun, Dong-Jin
    • Journal of the Korean Ceramic Society
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    • v.43 no.3 s.286
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    • pp.143-147
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    • 2006
  • Co-Fe-Al-O nanogranular thin films were fabricated by RF-magnetron sputtering under an $Ar+O_2$ atmosphere. High resolution transmission electron microscopy revealed that the Co-Fe-Al-O films are composed of bcc (Co, Fe) nanograins finer than 5 nm and an Al-O amorphous phase. A very large electrical resistivity of $374{\mu}{\Omega}cm$ was obtained, together with a large uniaxial anisotropy field of 50 Oe, a hard axis coercivity of 1.25 Oe, and a saturation magnetization of 12.9 kG. The actual part of the relative permeability was measured to be 260 at low frequencies and this value was maintained up to 1.3 GHz. The ferromagnetic resonance frequency was 2.24 GHz. The resulting Co-Fe-Al-O nanogranular thin films with a high electrical resistivity and high resonance frequency are considered to be suitable for GHz magnetic device applications.

Electrical Properties of Al-doped ZnO Transparent Conducting Thin Films Deposited by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 증착한 Al이 첨가된 ZnO 투명전도막의 전기적 특성)

  • Kim, Jin-Yong;Lee, Yong-Ui;Jo, Hae-Seok;Lee, Dong-Hyeon;Kim, Yeong-Jin;Kim, Hyeong-Jun
    • Korean Journal of Materials Research
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    • v.5 no.3
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    • pp.280-287
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    • 1995
  • 첨가제로 $Al_{2}$$O_{3}$가 포함된 ZnO 소결체가 타깃을 이용하여 RF 마그네트론 스퍼터링법으로 Al이 첨가된 ZnO박막을 증착하고, 타깃에 첨가된 $Al_{2}$$O_{3}$의 농도와 증착시 스퍼터링장치내의 기판위치에 따른 박막의 물성 변화를 고찰하였다. 타깃의 $Al_{2}$$O_{3}$ 첨가농도가 2wt%인 경우에 비저항치 8 $\times$ $10_{-3}$ $\Omega$-cm인 박막이 증차되었다. 또한 $Al_{2}$$O_{3}$가 2wt%이상 첨가된 경우는 모든 Al이 박막내부에서 Zn를 치환하여 전자주게로의 역할을 하지 못하고, 오히려 치환되지 못한 Al원자의 중성 불순물 산란효과에 의해 박막의 비저항이 증가하였다. 타깃의 마모영역 위에서 증착된 Al을 첨가한 ZnO 박막은 그 영역 KR에서 증착된 박막보다 높은 비저항값을 나타냈으며, 이는 큰 에너지를 가지는 산소입자의 충돌에 기인한 것으로 여겨진다.

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A Study on the properties of aluminum nitride films on the Al7075 deposited by pulsed DC reactive magnetron sputtering

  • Kim, Jung-hyo;Cha, Byung-Chul;Lee, Keun-Hak;Park, Won-Wook
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.11a
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    • pp.179-180
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    • 2012
  • Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

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Light Sensing Characteristics of $BaAl_2O_4$ thin film by RF magnetron sputtering (RF 마그네트론 스퍼터링에 의한 $BaAl_2O_4$:Eu 박막의 광센싱 특성)

  • Kim, Sei-Ki;Kang, Jung-Woo;Kwak, Chang-Gon;Ji, Mi-Jung;Choi, Byung-Hyun;Kim, Young-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.54-54
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    • 2008
  • $Eu^{2+}$, $Nd^{3+}$ co-doped $BaAl_2O_4$ are known as a long afterglow phosphor. We found that $Eu^{2+}$-doped $BaAl_2O_4$ showed ptotoconductivity in the range of UV and visual light. In this study, $BaAl_2O_4$:Eu thin film has been prepared by RF sputtering method and a sensing characteristics to UV and visual light was performed. Only $Eu^{2+}$ and $Nd^{3+}$ co-doped $BaAl_2O_4$ powders and targets for deposition were prepared by a convention solid state method, and the deposition was performed in a reducing $H_2$-Ar mixture gas on Si substrates. The observation of crystalline phase and morphology of the sputtered film were performed using XRD, EDX. The photoluminescence and photocurrent to UV and visual light were measured simultaneously using 300W-Xe solar simulator as a light source. It was confirmed that the photocurrent induced by irradiation of light showed a linear relationship to the light intensity.

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고주파 스퍼터링 방법으로 금속기판 위에 증착된 AlN박막의 질소가스 분압비에 따른 경도와 박막 표면의 배향성에 관한 연구

  • O, Ji-Yong;Lee, Chang-Hyeon;Bae, Gang;Jin, Ik-Hyeon;Kim, Hwa-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.166.2-166.2
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    • 2016
  • 최근 생산 장비의 발달로 인해 절삭공구, 전기전자 부품, 항공 및 자동차 부품 생산에 필요한 생산 장비의 수명연장, 고속 절단 및 고성능화가 중요시 되면서 우수한 내구성, 내마모성 및 고온 안정성을 갖는 기계부품 및 공구를 요구하게 되었다. 내마모성을 가지는 표면을 얻기 위해서는 TiN, TiC, AlN, Al2O3, CrN, ZrO2와 같은 경도 높은 물질을 증착하여 특성을 개선시키는 방법이 있다. 특히 AlN은 비교적 우수한 경도와 고온 안정성을 가지고 있어, 생산 장비의 고속 절단 및 반복되는 정밀 작업으로 인한 열충격과 마모를 완화시키는 역할을 하는 코팅재로 사용하기 적합하다. 본 실험에서는 RF-magnetron sputtering 방법을 이용하여 AlN 박막을 파워 150W, 질소가스 분압비에 따라 25%, 50%, 75%, 100%의 조건으로 금속기판 위에 증착하였다. 금속 기판 위에 제작된 AlN막은 XRD (X-ray Diffraction)을 사용하여 배향성을 확인하였고, HM-220 (Micro-vickers hardness tester)을 사용하여 AlN박막의 경도를 측정하였으며, SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope)을 이용하여 표면의 구조와 거칠기를 측정하였다. 이 실험을 통하여 우수한 물성과, 치밀한 조직의 AlN박막이 고속 절삭 공구, 유공압 실린더, 베어링과 같은 금속부품의 코팅소재로 적용가능 할 것으로 기대된다.

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