• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.2-2
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• 2011

Single-walled carbon nanotubes (SWNTs) have been considered as a promising candidate for nextgeneration electronics due to its extraordinary electrical properties associated with one-dimensional structure. Since diversity in electronic structure depends on geometrical features, the major concern has been focused on obtaining the diameter, chirality, and density controlled SWNTs. Despite huge efforts, the controlled synthesis of SWNTs has not been achieved. There have been various approaches to synthesize controlled SWNTs by preparation of homogeneously sized catalyst because the SWNTs diameter highly depends on catalyst nanoparticles size. In this study, geometrically controlled SWNTs were synthesized using designed catalytic layers: (a) morphologically modified Al2O3 supporting layer (Fe/Al2O3/Si), (b) Mo capping layer (Mo/Fe/Al/Si), and (c) heat-driven diffusion and subsequent evaporation process of Fe catalytic nanoparticles (Al2O3/Fe/Al2O3/Si). These results clearly revealed that (a) the grain diameter and RMS roughness of Al2O3 supporting layer play a key role as a diffusion barrier for obtaining Fe nanoparticles with a uniform and small size, (b) a density and diameter of SWNTs can be simultaneously controlled by adjusting a thickness of Mo capping layer on Fe catalytic layer, and (c) SWNTs diameter was successfully controlled within a few A scale even with its fine distribution. This precise control results in bandgap manipulation of the semiconducting SWNTs, determined by direct comparison of Raman spectra and theory of extended tight binding Kataura plot. We suggest that these results provide a simple and possible way for the direct growth of diameter, density, and bandgap controlled SWNTs by precise controlling the formation of catalytic films, which will be in demand for future electronic applications.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.32-35
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• 2006

For the white UV-LED applications, $Eu^{2+}$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue. green or blue-green light depending on the starting materials for synthesis. In addition, the structure was also changed when the different starting materials were used. When CaO and $CaCO_3$ was used as a starting material. tetragonal $Ca_2Al_2SiO_7$ was formed and blue-green and pure green light was emitted. respectively. However. in the case of $CaSiO_3$, triclinic $CaAl_2Si2O_8$ was formed and only pure blue emission was detected. The maximum emission intensity was obtained from $CaAl_2Si_2O_8:Eu^{2+}$ phosphors, which intensity was about 1.4 times higher than that of YAG:$Ce^{3+}$ phosphor used for blue LED.

• Journal of Korean Vacuum Science & Technology
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• 제5권1호
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• pp.11-18
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• 2001

Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• 한국광물학회지
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• 제31권4호
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• pp.295-306
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• 2018

고상 핵자기공명 분광분석은 비정질의 원자 구조를 제공하는 효과적인 방법론으로 다양한 비정질 규산염의 원자구조를 규명해왔다. 하지만, 함철 비정질 규산염의 경우, 철 함량 증가에 따른 신호의 변화가 상자성 효과와 구조 변동을 모두 반영하고 있기 때문에 분석에 많은 어려움이 있다. 이에 철 함량 증가에 따른 신호 변화가 실제 구조의 변동으로부터 기인한 것인지 확인하기 위해서는 온도변화에 따른 신호의 이동 여부를 관찰하는 것이 필수적이다. 본 연구에서는 철 함량에 따른 함철 비정질 규산염의 신호 변화를 해석하기 위하여 철이 포함된 휘석과 아노르다이트 조성의 비정질의 가변회전 속도 $^{29}Si$와 $^{27}Al$ NMR 실험을 수행하였다. 이는 온도 상승에 따른 신호의 변화 여부를 확인할 수 있게 하며, 쌍극자 효과에 관한 정보를 제공한다. 함철 휘석 비정질의 $^{29}Si$ NMR과 함철 아노르다이트 비정질의 $^{27}Al$ NMR 결과, 회전 속도 증가에도 불구하고 신호의 형태 및 위치가 달라지지 않았다. 회전 속도의 증가가 신호에 변화를 야기하지 않음을 확인한 본 결과는 철 함량 증가로 인한 신호의 변화가 상자성 이동 기원이 아니라, 철로부터 컷오프 반경 너머의 생존 신호임을 지시한다. 이에 철 함량 증가에 따라 아노르다이트 비정질의 Al 신호가 음의 화학적 차폐 방향으로 이동하는 현상은, 철의 진입에 따른 ${Q^4}_{Al}$(1 또는 2Si) 비율의 상대적 증가와 철과 ${Q^4}_{Al}$(3 또는 4Si) 구조간의 높은 공간적 근접도를 지시한다. 본 결과는 철 함량에 따른 규산염 비정질의 고상 NMR 신호 변화가 실제 구조적 변화를 지시하고 있음을 보여주며, 고상 NMR이 자연계에 존재하는 각종 유리질의 구조 분석에 효과적으로 적용될 수 있음을 제시한다.

• 한국광물학회지
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• 제20권4호
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• pp.367-376
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• 2007

에이니그마타이트($Na_4(Fe^{2+},Ti,Fe^{3+}){_{12}}(Fe^{3+},Si){_{12}}O_{40}$)는 Na가 풍부한 알칼리 화성암에 흔히 산출되는 광물이며, 분지 개방형 단쇄형 규산염광물로 분류된다. 3개의 산출이 다른 자연산 에이니그마타이트를 대상으로 뫼스바우어 분광분석을 실시하였으며 상세한 결정화학적 연구가 수행되었다. 뫼스바우어 분광분석 결과 9개의 흡수선이 분리되었는데, 3쌍의 흡수선은 팔면체 자리를 점유하는 $Fe^{2+}$의 피크이며, 저속도 구간의 독립적인 2개의 흡수선과 대응하는 한 개의 중첩된 흡수선은 각각 사면체와 팔면체 자리의 $Fe^{3+}$의 피크로 밝혀졌다. $Fe^{2+}$와 $Fe^{3+}$의 정확한 함량비에 의해 화학분석치가 재계산되었으며, Fe 양이온의 사면체 자리와 팔면체 자리에 대한 정확한 자리점유율로 상세한 결정화학적 정보를 제공하였다. 상당한 함량의 $Fe^{3+}/tet$는 사면체 자리점유에 있어 $Fe^{3+}$가 $Al^{3+}$보다 우위를 보여준다. 결정화학적로 규명된 에이니그마타이트(AEN1)의 상세한 화학조성은 $(Na_{3.97}Ca_{0.03})(Ca_{0.11}Mn_{0.59}Fe^{2+}{_{8.07}}Ti_{2.07}Mg_{0.70}Fe^{3+}{_{0.43}}Al_{0.04})(Fe^{3+}{_{0.56}}Al_{0.18}Si_{11.26})O_{40}$으로 밝혀졌다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권7호
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• pp.288-292
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• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1285-1292
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• 2009

Large single crystals of zeolite, |$Na_{75}$|[$Si_{117}Al_{75}O_{384}$]-FAU (Na-Y, Si/Al = 1.56), were synthesized from gels with composition of 3.58Si$O_2$ : 2.08NaAl$O_2$ : 7.59NaOH : 455$H_2$O : 5.06TEA : 2.23TCl. One of these, a colorless single-crystal was ion exchanged by allowing aqueous 0.02 M CsOH to flow past the crystal at 293 K for 3 days, followed by dehydration at 673 K and 1 ${\times}\;10^{-6}$ Torr for 2 days. The crystal structure of fully dehydrated partially $Cs^+$-exchanged zeolite Y, |$Cs_{45}Na_{30}$|[$Si_{117}Al_{75}O_{384}$]-FAU per unit cell (a = 24.9080(10) $\AA$) was determined by single-crystal X-ray diffraction technique in the cubic space group Fd $\overline{3}$ m at 294(1) K. The structure was refined using all intensities to the final error indices (using only the 877 reflections with $F_o\;>\;4{\sigma}(F_o))\;R_1$ = 0.0966 (Based on F) and $R_2\;=\;0.2641\;(Based\;on\;F^2$). About forty-five $Cs^+$ ions per unit cell are found at six different crystallographic sites. The 2 $Cs^+$ ions occupied at site I, at the centers of double 6-ring (D6Rs, Cs-O = 2.774(10) $\AA$ and O-Cs-O = 88.9(3) and 91.1(3)$^o$). Two $Cs^+$ ions are found at site I’ in the sodalite cavity; the $Cs^+$ ions were recessed 2.05 $\AA$ into the sodalite cavity from their 3-oxygen plane (Cs-O = 3.05(3) $\AA$ and O-Cs-O = 77.4(13)$^o$). Site-II’ positions (opposite single 6-rings in the sodalite cage) are occupied by 7 $Cs^+$ ions, each of which extends 2.04 $\AA$ into the sodalite cage from its 3-oxygen plane (Cs-O = 3.067(11) $\AA$ and O-Cs-O = 80.1(3)$^o$). The 26 $Cs^+$ ions are nearly three-quarters filled at site II in the supercage, being recessed 2.34 $\AA$ into the supercage (Cs-O = 3.273(8) $\AA$ and O-Cs-O = 74.3(3)$^o$). The 4 $Cs^+$ ions are found at site III deep in the supercage (Cs-O = 3.321(19) and 3.08(3) $\AA$), and 4 $Cs^+$ ions at another site III’ (Cs-O = 2.87(4) and 3.38(4) $\AA$). About 30 $Na^+$ ions per unit cell are found at one crystallographic site; The $Na^+$ ions are located at site I’ in the sodalite cavity opposite double 6-rings (Na-O = 2.578(11) $\AA$ and O-Na-O = 97.8(4)$^o$).

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.71-75
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• 2023

본 연구에서는 열화학기상증착법을 이용한 세슘계 무기 페로브스카이트의 성장기판에 따른 결정 구조의 변화 및 광학적 특성을 비교 분석하였다. 무기 페로브스카이트 결정은 CsBr과 PbBr₂를 전구체로 사용하여 SiO₂/Si와 c-Al₂O₃ 기판 위에 동일한 조건으로 CsPbBr₃를 성장하였다. 비정질 구조를 가진 SiO₂ 표면에서는 Cs₄PbBr₆-CsPbBr₃ 혼합상의 결정 입자가 성장하였으며, 단결정 구조인 c-Al₂O₃ 기판에서는 CsPbBr₃ (100) 결정 면방향이 우세한 단일상의 박막이 형성되었다. 광학적 분석 결과 CsPbBr₃는 약 91 meV의 반치폭을 갖고 약 534 nm 중심의 발광특성을 보였으며, Cs₄PbBr₆-CsPbBr₃ 혼합구조에서는 청색 변이에 의해 523 nm의 발광 및 6.88 ns의 빠른 광 소결시간을 확인하였다. 열화학기상증착법을 이용한 페로브스카이트의 결정구조의 제어 및 광특성의 변화는 디스플레이, 태양 전지, 광센서 등 다양한 광전 소자에 적용할 수 있을 것으로 기대된다.

• 한국토양비료학회지
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• 제46권2호
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• pp.87-91
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• 2013

The crystal structure of partially dehydrated fully $Zn^{2+}$-exchanged zeolite Y was determined by X-ray diffraction techniques in the cubic space group $Fd\bar{3}m$ at 294(1) K and refined to the final error indices $R_1/wR_2$ = 0.035/0.119 for $|Zn_{35.5}(H_2O)_{13}|[Si_{121}Al_{71}O_{384}]$-FAU. About 35.5 $Zn^{2+}$ ions per unit cell are found at six distinct positions; sites I, I', a second I', II', II, and a second II. In sodalite cavities, the 11 water molecules coordinate to Zn(I'b) and/or Zn(II') ions; each of two $H_2O$ bonds to a Zn(IIb) in supercages. Two different $Zn^{2+}$ positions near 6-oxygen ring are due to their Si-Al ordering in tetrahedral site by Si/Al ratio leading to the different kinds of 6-rings.