• Journal of the Korean Ceramic Society
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• v.54 no.4
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• pp.340-348
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• 2017

$SiC_f/SiC$ composites were joined using a $60{\mu}m-thick$ $Ti_3AlC_2$ or $Ti_3SiC_2$ MAX phase tape. The filler tape was inserted between the $SiC_f/SiC$ composites containing a 12 wt.% $Al_2O_3-Y_2O_3$ sintering additive. The joining was performed to a butt-joint configuration at $1600^{\circ}C$ or $1750^{\circ}C$ in an Ar atmosphere by applying 3.5 MPa using a hot press. Microstructural and phase analyses at the joining interface confirmed the decomposition of $Ti_3AlC_2$ and $Ti_3SiC_2$, indicating the joining by solid-state diffusion. The results showed sound joining interface without the presence of cracks. Joining strengths higher than 150 MPa could be obtained for the joints using $Ti_3AlC_2$ or $Ti_3SiC_2$ at $1750^{\circ}C$, while those for joined at $1600^{\circ}C$ decreased to 100 MPa approximately without the deformation of the joining bodies. The thickness of initial filler tape was reduced significantly after joining because of the decomposition and migration of MAX phase owing to the plasticity at high temperatures.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.191-193
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC-39vol.% $TiB_2$ and using 61vol.% SiC-39vol.% $ZrB_2$ powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by hot pressing annealing at $1650^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, $ZrB_2$ were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H, 3C), $TiB_2$, $ZrB_2$ and $YAG(Al_5Y_3O_{12})$ crystal phase on the SiC-$TiB_2$, and SiC-$ZrB_2$ composites. The ${\beta}\;{\alpha}$-SiC phase transformation was occurred on the $SiC-TiB_2$, $SiC-ZrB_2$ composites. The relative density, the flexural strength and Young's modulus showed respectively value of 98.57%, 226.06Mpa and $86.37{\times}10^3Mpa$ in SiC-$ZrB_2$ composites.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1588-1590
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• 2004

The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% $TiB_2$ and using 61vol.% SiC 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at 1800$^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), $TiB_2$ and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-$TiB_2$, and SiC(2H), WC and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-WC composites. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was ocurred on the SiC-$TiB_2$, but ${\alpha}{\rightarrow}{\beta}$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the flexural strength showed respectively value of 96.2%, 310.19Mpa in SiC-WC composites. The electrical resistivity of the SiC-$TiB_2$ and the SiC-WC composites is all positive temperature cofficient resistance(PTCR) in the temperature ranges from 25$^{\circ}C$ to 500$^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.25 no.3
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• pp.231-236
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• 1988

In order to investigate the effect of second phase on $Al_2O_3$ matrix, SiC particles were dispersed in $Al_2O_3$ matrix as a second phase over the content range of 5 vol.% to 20 vol.%. To this mixture, $Y_2O_3$ or $TiO_2$ powders were added as a sintering additive before isostatically pressing and pressurelessly sintering at 180$0^{\circ}C$ for 90 min in $N_2$ atmosphere. With increasing SiC content, relative densities of composites were decreased but mechanical properties of composites were improvjed. In the case of adding $Y_2O_3$ as a sintering additive, maximum values of flexural strength, hardness and fracture toughness were 525 MPa, 17.1 GPa, 4.1 MPa.m1/2 respectively. In the case of adding X$TiO_2$ as a sintering additive, maximum values of flexural strength, hardness were 285 MPa, 12.1 GPa respectively. Improved mechanical properties were found to be the results of grain growth control of $Al_2O_3$ matrix and crack deflection by the second phase SiC particles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.118-122
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• 2001

The ${\beta}-SiC+TiB_2$ ceramic electroconductive composites were pressureless-sintered and annealed by adding 12wt% $Al_2O_3+Y_2O_3$(6 : 4wt%) powder as a function of sintering temperature. The relative density is over 78.83% of the theoretical density and increased with increasing sintering temperature. The phase analysis of the composites by XRD revealed of $\alpha$-SiC(6H), $TiB_2$, $Al_5Y_2O_{12}$ and $\beta$-SiC(15R). Flexural strength showed the highest of 140 MPa for composites sintered at $1900^{\circ}C$. The vicker's hardness increased with increasing sintering temperature and showed the highest of 4.07 GPa at $1900^{\circ}C$. Owing to YAG, the fracture toughness showed the highest of 4.07 $MPa{\cdot}m^{1/2}$ for composites at $1900^{\circ}C$. The electrical resistivity was measured by the Pauw method from $25^{\circ}C$ to $700^{\circ}C$. The electrical resistivity of the composites showed the PTCR(Positive Temperature Coefficient Resistivity).

• Proceedings of the KAIS Fall Conference
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• 2001.05a
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• pp.40-46
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• 2001

The thermal stability of $Al_2TiO_{5}$ ceramics was improved by formation of solid solution with MgO, such as $MgAl_2O_4$ spinel through electrofusion in an arc furnance, and by limitation of grain size and microcracks with $SiO_2$, $ZrO_2$ and ${\alpha}$-$Al_2O_3$. The low thermal expansion properties of $Al_2TiO_{5}$ composites show the thermal hysteresis curves due to the strong anisotropy of $Al_2TiO_{5}$. These phenomena are explained by the opening and closing of microcracks. The relation between thermal hysteresis, microstructures and sintering temperature were studied by dilatometry.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.498-502
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• 2010

Aluminium titanate($Al_2TiO_5$) has extremely anisotropic thermal expansion properties in single crystals, and polycrystalline material spontaneously microcracks in the cooling step after sintering process. These fine intergranular cracks limit the strength of the material, but provide an effective mechanism for absorbing strain energy during thermal shock and preventing catastrophic crack propagation. Furthermore, since machinable BN-ceramics used as an insulating substrate in current micro-electronic industry are very expensive, the development of new low-cost machinable substrate ceramics are consistently required. Therefore, cheap $Al_2TiO_5$-machinable ceramics was studied for the replacement of BN ceramics. $Al_2O_3-Al_2TiO_5$ ceramic composite was fabricated via in-situ reaction sintering. $Al_2O_3$ and $TiO_2$ powders were mixed with various mol-ratio and sintered at 1400 to $1600^{\circ}C$ for 1 h. Density, hardness and strength of sintered ceramics were systematically measured. Phase analysis and microstructures were observed by XRD and SEM, respectively. Machinability of each specimens was tested by micro-hole machining. The results of research showed that the $Al_2TiO_5$-composites could be used for low-cost machinable ceramics.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.124-125
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• 2007

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• The Korean Journal of Ceramics
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• v.4 no.3
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• pp.171-175
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• 1998

$Al_2O_3$-TiC composites were prepared from aluminum, titanium oxide, and carbon fibers by self-propagating high-temperature synthesis(SHS). After the SHS reaction, the TiC phase in the sample was found either fibrous or non-fibrous shape. The fraction of the fibrous TiC phase varied with the amount of $Al_2O_3$ diluent addition. The optimum amount of diluent to make fibrous carbide was determined to be 30%. The fibers were hollow inside and made of multiple grains with a composition of titanium carbide. The hollow fiber formation mechanism was suggested and discussed. The synthesized powders were consolidated to dense composites by hot pressing at $1750^{\circ}C$ under 30 MPa.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1228-1229
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• 2008

The composites were fabricated 61[vol.%] ${\beta}$-SiC and 39[vol.%] $TiB_2$ powders with the liquid forming additives of 12[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressure or pressureless annealing at 1,650[$^{\circ}C$] for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the SiC-$TiB_2$ electroconductive ceramic composites. Phase analysis of SiC-$TiB_2$ composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and In Situ $YAG(Al_5Y_3O_{12})$. The relative density, the flexural strength and the Young's modulus showed the highest value of 88.32[%], 136.43[MPa] and 52.82[GPa] for pressure annealed SiC-$TiB_2$ composites at room temperature. The electrical resistivity showed the lowest value of 0.0162[${\Omega}{\cdot}cm$] for pressure annealed SiC-$TiB_2$ composite at 25[$^{\circ}C$]. The electrical resistivity of the pressure annealed SiC-$TiB_2$ composite was positive temperature coefficient resistance (PTCR) but the electrical resistivity of the pressureless annealed SiC-$TiB_2$ composites was negative temperature coefficient resistance(NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].