• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.385-390
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• 1996

The electrical resistivity of the ceramic glaze coated on ceramic substrate plays an important role on the characteristics of the thick and thin film electrical circuits. In this study the effects of the various modifiers on the electrical resistivity were examined in SiO2-Al2O3-B2O3-RO-Na2O (RO=CaO , SrO, BaO, PbO) glass system. In alkali free glasses where divalent cations are responsible for electrical conduction the electrical conductivity of th glasses increased with the ionic size of divalent cations due to the decrease in the bond strength between oxyben and divalent cation. In Na2O containing glasses however where Na+ ion is responsible for electrical conduction the ionic conductivity decreased with the ionic size of divalent cations because the blocking effect of the cations on Na+ ion movement increased with larger divalent cations. Na+ ionic conduction also depended on the glass structure relaxation due to the corrdination number changes of B2O3 and Al2O3 which varied with the NaO2 content in the glass.

• Journal of Sensor Science and Technology
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• v.7 no.5
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• pp.372-376
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• 1998

We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of $NbS_2$ thin film was performed in the vacuum chamber by PLD method. $Al_2O_3$(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline $NbS_2$ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to $600^{\circ}C$. From the result of X-ray diffraction studies of the prepared $NbS_2$ thin films, it was reported that the $NbS_2$, thin film showed a good crystallinity at substrate temperature $600^{\circ}C$ and with S/Nb composition ratio 4.0 on $Al_2O_3$(012) but did not on Si(111). The films exhibited c-axis orientation.

• Progress in Superconductivity
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• v.2 no.2
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• pp.71-75
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• 2001

The effect of annealing step-edges of LaAlO$_3$ and MgO single crystal substrates on YBa$_2$Cu$_3$O$_{7}$ junction has been studied. The step-edge was fabricated by argon ion milling and was annealed at 105$0^{\circ}C$ in 1 attn oxygen pressure. We compared AFM image near step-edge of the substrates between before and after annealing process. And YBa$_2$Cu$_3$O$_{7}$ thin film was deposited on the step-edge by a standard pulsed laser deposition. The step-edge junctions were characterized by current-voltage curves at 77 K. The annealing of step-edges of MgO substrate improved the current-voltage characteristic of Josephson junction: double steps in the current-voltage characteristic disappeared. However the annealing for LaAlO$_3$ did not improve the junction property.rty.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.211-211
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• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.359-361
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• 2003

Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.480-483
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• 2001

Epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films were grown at 80$0^{\circ}C$ on $Al_2$O$_3$ (1102) and LaAlO$_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-TiO$_2$ and anatase-TiO$_2$ films on conductive RuO$_2$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ electrodes, respectively Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-TiO$_2$ film grown on RuO$_2$ showed a very broad peak in the visible light region. An epitaxial anatase-TiO$_2$ film grown on La$_{0.5}$Sr$_{0.5}$CoO$_3$ showed a strong peak with a threshold energy of 3.05 eV 3.05 eV

• Composites Research
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• v.26 no.1
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• pp.60-65
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• 2013

A nanolaminate consisting of alternate layers of aluminium oxide ($Al_2O_3$) (5 nm) and zirconium oxide ($ZrO_2$) (20 nm) was deposited at an optimized oxygen partial pressure of $3{\times}10^{-2}$ mbar by pulsed laser deposition. The nanolaminate film was analysed using high temperature X-ray diffraction (HTXRD) to study phase transition and thermal expansion behaviour. The surface morphology was investigated using field emission scanning electron microscopy (FE-SEM). High temperature X-ray diffraction indicated the crystallization temperature of tetragonal zirconia in the $Al_2O_3/ZrO_2$ multilayer-film was 873 K. The mean linear thermal expansion coefficient of tetragonal $ZrO_2$ was $4.7{\times}10^{-6}\;K^{-1}$ along a axis, while it was $13.68{\times}10^{-6}\;K{-1}$ along c axis in the temperature range 873-1373 K. The alumina was in amorphous nature. The FESEM studies showed the formation of uniform crystallites of zirconia with dense surface.

• Korean Journal of Materials Research
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• v.30 no.5
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• Korean Journal of Materials Research
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• v.14 no.3
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• pp.163-167
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• 2004

TiAl(La)N thin films were oxidized in vacuum of about 7 Pa to reduce the oxidation of WC-Co as a substrate. The oxidation rate constants of the thin films were quantified by an assumption of parabolic oxidation. Increasing AI content significantly decreased the parabolic oxidation rate constant. A simultaneous addition of AI and La was more effective to reduce the oxidation rate. The parabolic oxidation rate constant of $Ti_{0.66}$ $Al_{0.32}$ $La_{ 0.02}$N thin film at 1273 K showed about ten times lower than that of TiN. The addition of a small amount of La with Al induced the preferential formation of dense $\alpha$ $-Al_2$$O_3$ film in oxide film, leading to the abrupt reduction of oxidation rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.480-483
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• 2001

Epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films were grown at $800^{\circ}C$ on $Al_2O_3$ (1102) and $LaAlO_3$ (001), respectively, using pulsed laser deposition. The formation of different phases on different substrates could be qualitatively explained by the atomic arrangements at the interfaces. We also successfully deposited epitaxial rutile-$TiO_2$ and anatase-$TiO_2$ films on conductive $RuO_2$ and $La_{0.5}Sr_{0.5}CoO_{3}$ electrodes, respectively. Using a Kelvin probe, we measured the photovoltaic properties of these multilayer structures. A rutile-$TiO_2$ film grown on $RuO_2$ showed a very broad peak in the visible light region. An epitaxial anatase-$TiO_2$ film grown on $La_{0.5}Sr_{0.5}CoO_{3}$ showed a strong peak with a threshold energy of 3.05 eV.