• 한국결정성장학회지
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• 제30권2호
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• pp.66-72
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• 2020

본 연구에서는 CaO-Al₂O₃-SiO₂(CAS) 계 유리 벌크와 유리 분체를 알루미나 소결체 표면에 스프레이 코팅막 적용 시 내플라즈마 특성에 대하여 비교하였다. CAS 유리 벌크와 유리 코팅막을 CF₄/O₂/Ar 플라즈마 가스에 노출시켰을 때의 식각율과 표면의 미세구조 분석을 통해 내플라즈마 특성을 확인하였다. CAS 유리 소성막은 유리 벌크와 비교하여 에칭속도가 최대 25배 빠른 것을 확인하였다. 유리 소성막의 표면 조도 값과 식각율 간의 통계학적으로 높은 상관성을 도출하였고, 이에 따라 소성막의 높은 표면조도가 빠른 식각을 유발하는 것으로 판단하였다. 그리고 유리 소성막은 Ca 성분의 함량이 적고, Si 함량이 많은 크리스토발라이트(cristobalite) 결정의 형성으로 인하여 Ca과 Ca 불화물에 의한 내플라즈마 효과가 감소한 것으로 판단된다. 따라서 CAS 유리 소성막은 유리 벌크에 비해 낮은 내플라즈마 특성을 갖는 것으로 판단된다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.924-927
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• 2003

Aluminium-doped ZnO (ZnO:Al) films were grown by atomic layer-controlled deposition on glass substrates at temperature of 200 $^{\circ}C$ using diethylzinc($Zn(C_{2}H_{2})_{2}$; DEtZn), water($H_{2}O$) and trimethylaluminium ($Al(CH_{3})_{3}$; TMA) as precursors. As the cycle ratio of TMA to DEZn(TMA/DEZn) increased, the resistivity of the films decreased and the roughness increased. In the case of TMA/DEZn pulse ratio of 1 to 10, the film had a resistivity of $9.7{\times}l0^{-4}{\Omega}{\cdot}cm$ and a roughness of 2.25nm(rms), while in the case of only DEZ injection the film had a resistivity of $3.5{\times}10^{-3}{\Omega}{\cdot}cm$ and a roughness of 1.07nm(rms)

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.192-192
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• 2009

We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

• 한국재료학회지
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• 제12권7호
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• pp.540-544
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• 2002

Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.140-142
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• 2003

ZnO thin films are demanded for device applications, so ZnO buffer layer was used to improve for good properties of ZnO thin film. In this study, the structural, electrical and optical properties of ZnO thin films deposited with various buffer thickness was investigated by X-ray diffraction (XRD), Hall measurements, Photoluminescence(PL). ZnO buffer layer and ZnO thin films on sapphire($Al_{2}O_{3}$) substrate have been deposited $200^{\circ}C$ and $400^{\circ}C$ respectively by pulsed laser deposition. It is observed the variety of lattice constant of ZnO thin film by (101) peak position shift with various buffer thickness. It is founded that ZnO thin film with buffer thickness of 20 nm was larger resistivity of 200 factor and UV/visible of 2.5 factor than that of ZnO thin films without buffer layer. ZnO thin films with buffer thickness of 20 nm have shown the most properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.100-100
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• 2000

Aluminium oxide (Al2O3) films have been investigated for many applications such as insulating materials, hard coatings, and diffusion barriers due to their attractive electrical and mechanical properties. In recent years, application of Al2O3 films for dielectric materials in integrated circuits as gates and capacitors has attracted much attention. Various deposition techniques such as sol-gel, metalorganic decomposition (MOD), sputtering, evaporation, metalorganic chemical vapor deposition (MOCVD), and pulsed laser ablation have been used to fabricate Al2O3 thin films. Among these techniques, reactive sputtering has been widely used due to its high deposition rate and easy control of film composition. It has been also reported that the sputtered Al2O3 films exhibit superior chemical stability and mechanical strength compared to the films fabricated by other processes. In this study, Al2O3 thin films were deposited on Pt/Ti/SiO/Si2 and Si substrates by DC reactive sputtering at room temperature with variation of the Ar/O2 ratio in sputtering ambient. Crystalline phase of the reactively sputtered films was characterized using X-ray diffractometry and the surface morphology of the films was observed with Scanning election microscopy. Effects of Th Ar/O2 ratio characteristics of Al2O3 films were investigated with emphasis on the thickness dependence of the dielectric properties. Correlation between the dielectric properties and the microstructure was also studied

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.125-130
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• 2007

DLC coating on ceramics is very useful for manufacturing the materials with hardness and low friction. Adhesion of DLC thin film on ceramics, on the other hand, is usually very weak. Adhesion of DLC film depends on many parameters such as contamination and chemical bonding between thin film and substrate. In this study, adhesion of DLC film on ceramics was improved by the intermediate layer when the plasma immersion ion deposition (PIID) technique was applied. It is found that the chemical composition and the thickness of intermediate layer have significantly an effect on the adhesion of DLC thin film on $Al_2O_3$.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.112-113
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• 2013

Thin CrAlMgSiN films, whose composition were 30.6Cr-11.1Al-7.3Mg-1.2Si-49.8N (at.%), were deposited on steel substrates in a cathodic arc plasma deposition system. They consisted of alternating crystalline Cr-N and AlMgSiN nanolayers. After oxidation at $800^{\circ}C$ for 200 h in air, a thin oxide layer formed by outward diffusion of Cr, Mg, Al, Fe, and N, and inward diffusion of O ions. Silicon ions were relatively immobile at $800^{\circ}C$. After oxidation at $900^{\circ}C$ for 10 h in air, a thin $Cr_2O_3$ layer containing dissolved ions of Al, Mg, Si, and Fe formed. Silicon ions became mobile at $900^{\circ}C$. After oxidation at $900^{\circ}C$ for 50 h in air, a thin $SiO_2-rich$ layer formed underneath the thin $Cr_2O_3$ layer. The film displayed good oxidation resistance. The main factor that decreased the oxidation resistance of the film was the outward diffusion and subsequent oxidation of Fe at the sample surface, particularly along the coated sample edge.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.158-158
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer. An effective mobility of $2.3{\times}10^{-3}cm^2V^{-1}s^{-1}$ was achieved, which is significantly different from that of pentacene films that are not aligned. The proposed OTFT devices with an ultrathin $HfO_2$ structure as the gate dielectric layer were operated at a gate voltage lower than 5 V.