• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• 한국초전도ㆍ저온공학회논문지
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• 제10권3호
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• pp.5-8
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• 2008

On highly-textured IBAD-MgO templates, we have tried to find proper buffer layers among various candidate materials, including $LaMnO_3$ (LMO), $La_2Zr_2O_7$ (LAO), $LaAlO_3$ (LAO), $LaGaO_3$ (LGO), $NdGaO_3$ (NGO), and $BaZrO_3$ (BZO). All buffer layers were deposited on the IBAD-MgO templates by KrF pulsed laser deposition(PLD). LAO layer showed an armorphous phase. LZO, LGO, and NGO layers showed polycrystalline growth. Only LMO and BZO layers exhibited c-axis oriented biaxially textured films. Optimally processed LMO buffer layer at deposition temperature of $750^{\circ}C$ and $PO_2$ of 100mTorr exhibited ${\triangle}{\phi}$ value of ${\sim}-5.2^{\circ}$ and RMS roughness of 5.6nm. Interestingly, BZO buffer layers with ${\triangle}{\phi}$ values of ${\sim}-6^{\circ}$ could be routinely produced over a wide PLD processing condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 한국진공학회지
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• 제18권3호
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• pp.213-220
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• 2009

Al이 도핑된 투명 전도성 Al:ZnO (AZO) 박막에 대한 RF magnetron sputtering 증착 법을 이용한 저온 최적공정조건을 연구하였다. 투명전극 재료로써의 AZO 박막의 전기적, 결정학적 물성을 최대한 향상시키기 위해서, in-situ상태에서 유리기판상에 최적화된 증착 조건의 AZO 버퍼 층을 삽입하는 이중박막 구조를 제작하였다. RF 인가 전력 $50{\sim}60\;W$에서 증착된 버퍼층 위에 120 W의 RF 전력에서 성장한 AZO 박막의 경우, 비저항 $3.9{\times}10^{-4}{\Omega}cm$, 전하 캐리어농도 $1.22{\times}10^{21}/cm^3$, 홀 이동도 $9.9\;cm^2/Vs$의 전기적 특성을 보였다. 이러한 결과는 버퍼 층이 없는 기존의 단일 구조와 비슷하나, 전기적 비저항 특성을 약 30% 정도 향상시킬 수 있었으며, 전기적 특성의 향상 원인을 $Ar^+$ 이온의 입사 에너지의 변화에 따른 버퍼 층의 압축응력과 결정화 정도와의 의존성으로 설명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.413-416
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• 2004

In this study, zinc oxide(ZnO) having large misfit(18.2%) with sapphire was tried to be grown on very thin nitride buffer layers. For the creation of various kinds of nitride buffer layer, sapphire surface was modified by an irradiation of nitrogen ion beam with low energy generated from stationary plasma thruster(SPT) at room temperature. After the irradiation of ion beam, Al-N and Al-O-N bonding was identified to be formed as nitride buffet layers. Surface morphology was measured by AFM and then ZnO growth was followed by pulsed laser deposition(PLD). Their properties are analyzed by XRD, AFM, TEM, and PL. We observed that surface morphology was improved and deep level emission related to defects was almost vanished in PL spectra from the ZnO grown on nitride buffer layer.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.89-89
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.160-160
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• 2010

Organic electronic devices require a passivation layer to ensure sufficient lifetime. Specifically, flexible organic electronic devices need a barrier layer that transmits less than $10^{-6}\;g/m^2/day$ of water and $10^{-5}\;g/m^2/day$ of oxygen. To increase the lifetime of organic electronic device, therefore, it is indispensable to protect the organic materials from water and oxygen. Severe groups have reported on multi-layerd barriers consisting inorganic thin films deposited by plasma enhenced chemical deposition (PECVD) or sputtering. However, it is difficult to control the formation of granular-type morphology and microscopic pinholes in PECVD and sputtering. On the contrary, atomic layer deoposition (ALD) is free of pinhole, highly uniform, conformal films and show good step coverage. In this study, the passivation layer was deposited using single-process PEALD. The passivation layer, in our case, was a bilayer system consisting of $Al_2O_3$ films and a $TiO_2$ buffer layer on a poly (ether sulfon) (PES) substrate. Because the deposition temperature and plasma power have a significant effect on the properties of the passivation layer, the characteristics of the $Al_2O_3$ films were investigated in terms of density under different deposition temperatures and plasma powers. The effect of the $TiO_2$ buffer layer also was also addressed. In addition, the water vapor transmission rate (WVTR) and organic light-emitting diode (OLEDs) lifetime were measured after forming a bilayer composed of $Al_2O_3/TiO_2$ on a PES substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.273-273
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• 2008

This paper describes the frequency response of two-port surface acoustic wave (SAW) resonator made of 002-polycrystalline aluminum nitride (AlN) thin film on 111-poly 3C-SiC buffer layer. In there, Polycrystalline AlN thin films were deposited on polycrystalline 3C-SiC buffer layer by pulsed reactive magnetron sputtering system, the polycrystalline 3C-SiC was grown on $SiO_2$/Si sample by CVD. The obtained results such as the temperature coefficient of frequency (TCF) of the device is about from 15.9 to 18.5 ppm/$^{\circ}C$, the change in resonance frequency is approximately linear (30-$150^{\circ}C$), which resonance frequency of AlN/3C-SiC structure has high temperature stability. The characteristics of AlN thin films grown on 3C-SiC buffer layer are also evaluated by using the XRD, and AFM images.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.319-320
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• 2009

In this study, high-quality Al-N doped p-type ZnO thin films were deposited on n-type Si (100) wafer or Si coated with buffer layer by DC magnetron sputtering in the mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin film showed higher carrier concentration $2.93\times10^{17}cm^{-3}$, lower resistivity of $5.349\;{\Omega}cm$ and mobility of $3.99\;cm^2V^{-1}S^{-1}$, respectively. According to PL spectrum, the Al donor energy level depth ($E_d$) of Al-N codoped p-type ZnO film was reduced to about 51 meV, and the N acceptor energy level depth ($E_a$) was reduced to 63 meV, respectively.