• Title/Summary/Keyword: $Al_2O_3$ Ceramic Dielectric

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Thermal Expansion and Dielectric Properties of CaO-ZnO-B2O3-SiO2 Glass-Added Al2O3 Composites for LTCC Applications

  • Byeon, Tae-Hun;Park, Hyo-Sung;Shin, Hyun-Ho;Yoon, Sang-Ok;Oh, Chang-Yong
    • Journal of the Korean Ceramic Society
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    • v.47 no.4
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    • pp.325-328
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    • 2010
  • Varying quantities of a high-thermal-expansion glass, 50CaO-20ZnO-$20B_2O_3-10SiO_2$ (CZBS), were added to alumina and sintered at $875^{\circ}C$ for 2 h for low temperature co-firing ceramic (LTCC) applications. As the amount of glass addition increased from 40 wt% to 70 wt%, the apparent density of the sintered product increased from 88.8% to 91.5%, which was also qualitatively confirmed by microstructural observation. When the glass addition was very high, e.g., 70 wt%, an apparent formation of secondary phases such as $CaZn_2AlZnSiAlO_7$, $Ca_2Al(AlSi)O_7$, $Ca_2Al_2SiO_7$, $Ca_2ZnSi_2O_7$ and ZnO, was observed. Both the dielectric constant and the coefficient of thermal expansion increased with the glass addition, which was qualitatively consistent with the analytical models, while the experimental values were lower than the predicted ones due to the presence of pores and secondary phases.

A study on dielectric characteristic of phosphate glass-ceramic for AC-PDP (AC-PDP용 인산염 결정화 유리의 유전적 특성에 관한 연구)

  • Kim, Joon-Hyung;Yon, Seog-Joo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.3
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    • pp.102-107
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    • 2007
  • Dielectric layer of phosphate glass for plasma display panel (PDP) device made by silk screen printing on soda-lime glass. For regulate thermal expansion coefficient (CTE) of between substrate glass and dielectric layer use addition of $Al_2O_3$ and $TiO_2$. The crystallization process of glass-ceramics for dielectric layer have been examined by DTA, XRD some of optical, electrical properties of the dielectric layer were evaluated by UV-spectrometer, dilatometer, impedance analyser. The principal crystalline phase was identified as zinc metaphosphate [$Zn(PO_3)_2$] and zinc pyrophosphate [$Zn_2P_2O_7$]. Reflectance and dielectric constance increased with the addition of $TiO_2$ filler, dielectric constant lower the out side reflectance unchanging of the adding of $Al_2O_3$ filler. Besides CTE was at about $62{\times}10^{-7}/^{\circ}C$.

Phase Evolution, Thermal Expansion, and Microwave Dielectric Properties of Cordierite-Al2O3 Composite

  • Kim, Shin;Song, Eun-Doe;Hwang, Hae-Jin;Lee, Joo-sung;Yoon, Sang-Ok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.5
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    • pp.337-341
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    • 2021
  • Phase evolution, thermal and microwave dielectric properties of cordierite-Al2O3 composite were investigated. As the content of Al2O3 increased, mullite, sapphirine, and spinel were formed as secondary phases, implying that cordierite may be decomposed by the reaction with Al2O3. All sintered specimens exhibited dense microstructures. The densification occurred through liquid phase sintering. As the content of Al2O3 increased, the thermal expansion coefficient and the dielectric constant increased, whereas the quality factor decreased. The thermal expansion coefficient, the dielectric constant, and the quality factor of the 90 wt% cordierite 10 wt% Al2O3 composite sintered at 1,425℃ were 2.9×10-6 K-1, 5.1, and 34,844 GHz, respectively.

Microwave Dielectric properties of $(1-x)La_{2/3}TiO_3-xLaAlO_3$System ($(1-x)La_{2/3}TiO_3-xLaAlO_3$계의 마이크로파 유전 특성)

  • 이경태;박현수;문종하
    • Journal of the Korean Ceramic Society
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    • v.34 no.4
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    • pp.368-372
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    • 1997
  • The microwave dielectric properties of (1-x)La2/3TiO3-xLaAlO3 system in which LaAlO3 having $\varepsilon$r$\geq$90 and positive $\tau$f was investigated. The crystal system of (1-x)La2/3TiO3-xLaAlO3 was pseudo-cubic in the range of 0.1$\leq$x$\leq$0.07. Its lattice constant increased with increasing x in spite that the amount of LaAlO3 containing of smaller Al(0.57 $\AA$) ion than Ti(0.64 $\AA$) increased. As the amount of LaAlO3 increased from x=0.1 to 0.9, the relative dielectric constant ($\varepsilon$r) decreased from 50 to 23 and the temperature coefficient of resonant frequency($\tau$f) decreased from +84 to -50. On the other hand, the value of Q.f0 reached a maximum (148,000 at 7 GHz) at x=0.7, where a rapid increase in the peak intensity of XRD occured, and further increased after prolonged sintering. The microwave dielectric properties of $\varepsilon$r=37, Q.f0=47,000 (at 7 GHz), and $\tau$f=-2 ppm/$^{\circ}C$ were obtained near 0.6La2/3TiO3-0.4LaAlO3 (x=0.4) composition.

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Effect of WO3 or Ga2O3 Addition on the Phase Evolution and Properties of Y2O3-Doped AlN Ceramics (Y2O3-AlN 세라믹스의 생성상 및 물성에 미치는 WO3 및 Ga2O3의 첨가효과)

  • Shin, Hyunho;Yoon, Sang-Ok;Kim, Shin;Hwang, Injoon
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.206-211
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    • 2013
  • The effect of a $WO_3$ or $Ga_2O_3$ addition on the densification, phase evolution, optical reflectance, and elastic and dielectric properties of $Y_2O_3$-doped AlN ceramics sintered at $1800^{\circ}C$ for 3 h is investigated. The investigated compositions of the additives are 4.5 wt% $Y_2O_3$ (YA), 3.5 wt% $Y_2O_3$-1.0 wt% $Ga_2O_3$ (YGA), and 3.5 wt% $Y_2O_3$-1.0 wt% $WO_3$ (YWA). $YAlO_3$ and $Y_4Al_2O_9$ form as the secondary phases in all of the investigated compositions, whereas $W_2B$ appears additionally in the YWA. In the YGA, Ga is detected in the AlN grains, indicating that the dissolution of $Ga_2O_3$ into the AlN lattice occurs. The addition of $WO_3$ blackens the specimen more significantly than that of $Ga_2O_3$ does. In all of the investigated specimens, the linear shrinkage and the apparent density are above 20 percent and in the range of 3.34-3.37 $g/cm^3$, respectively. The elastic modulus, Poisson's ratio, the dielectric constant, and the dielectric loss are in the ranges of 335-368 GPa, 0.146-0.237, 8.60-8.63, $2.65-3.95{\times}10^{-3}$, respectively. The sinterability and the properties of $Y_2O_3$-doped AlN ceramics are not much altered by the addition of $WO_3$ or $Ga_2O_3$.

Synthesis and dielectric properties of the $ZnAl_2O_4$ ceramics for low-firing (저온소결용 $ZnAl_2O_4$ 세라믹스의 합성 및 유전 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Kim, Shin;Kim, Nam-Hyup;Kim, Yun-Han;Shim, Sang-Heung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.279-279
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    • 2007
  • Synthesis and dielectric properties of glass-ceramic composites with zinc borosilicate glass(here after ZBS glass) were investigated as functions of $ZnAl_2O_4$ phase synthesis method, glass addition (50~60 vol%) and sintering temperature ($600{\sim}950^{\circ}C$ for 2 hrs). The 50 vol% ZBS glass-$Al_2O_3$ and 60 vol% ZBS glass-$ZnAl_2O_4$ ensured successful sintering below $900^{\circ}C$. But the composition of 100-x-y vol% ZBS glass-x vol% $Al_2O_3-y$ vol% ZnO exhibited poor sinterability below $900^{\circ}C$ and the swelling phenomenon occurred in this composite with the large amount of ZBS glass. The sintering behavior of Glass-ceramic composites was affected by the crystallization of $ZnAl_2O_4$ which was formed by the reaction between ZBS glass and $Al_2O_3$. Dielectric constant (${\varepsilon}_r$), $Q{\times}f$ value and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 and 60 vol% ZBS glass contents demonstrated $ZBS-Al_2O_3({\varepsilon}_r=5.7)$, $ZBS-ZnAl_2O_4({\varepsilon}_r=5.8)$ which is applicable to substrate requiring an low dielectric properties.

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Inkjet Printing Process to Fabricate Non-sintered Low Loss Density for 3D Integration Technology (잉크젯 프린팅 공정을 이용한 3D Integration 집적 기술의 무소결 고충진 유전체막 제조)

  • Jang, Hun-Woo;Kim, Ji-Hoon;Koo, Eun-Hae;Kim, Hyo-Tae;Yoon, Young-Joon;Hwang, Hae-Jin;Kim, Jong-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.192-192
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    • 2009
  • We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

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Phase Evolution, Microstructure and Microwave Dielectric Properties of Zn1.9-2xLixAlxSi1.05O4 Ceramics

  • Kim, Yun-Han;Kim, Shin;Jeong, Seong-Min;Kim, So-Jung;Yoon, Sang-Ok
    • Journal of the Korean Ceramic Society
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    • v.52 no.3
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    • pp.215-220
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    • 2015
  • Phase evolution, microstructure, and microwave dielectric properties of $Li_2O$ and $Al_2O_3$ doped $Zn_{1.9}Si_{1.05}O_4$, i.e., $Zn_{1.9-2x}Li_xAl_x-Si_{1.05}O_4$, ceramics (x = 0.02 ~ 0.10) were investigated. The ceramics were densified by $SiO_2$-rich liquid phase composed of the Li-Al-Si-O system, indicating that doped Li and Al contributed to the formation of the liquid. As the secondary phase, ${\beta}$-spodumene solid solution with the composition of $LiAlSi_3O_8$ was precipitated from the liquid during the cooling process. The dense ceramics were obtained for the specimens of $$x{\geq_-}0.06$$ showing the rapid densification above $1000^{\circ}C$, implying that a certain amount of liquid is necessary to densify. The specimen of x = 0.06 sintered at $1050^{\circ}C$ exhibited good microwave dielectric properties; the dielectric constant and the quality factor ($Q{\times}f_0$) were 6.4 and 11,213 GHz, respectively.

A study on the manufacture of dielectric glass-ceramics (유전성 glass-ceramics 제조에 관한 연구)

  • 이종근;박용완;이병하;현동석;이준영
    • Journal of the Korean Ceramic Society
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    • v.19 no.4
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    • pp.281-286
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    • 1982
  • The composition of glasses to be suitable for crystallisation of $BaTiO_3$ by heat-treatment and the dielectric properties of the glass-ceramics were investigated. The composition of the family of glasses was defined by the formula $\chi$ $BaTiO_3 + (100-$\chi$)Al_2O_3$.$2SiO_2$ and excess BaO. Data were presented on dielectric constant and loss tangent at various frequencies. The effects of excess BaO on dielectric properties were investigated. The additions of $Na_2O$ and $Nb_2O_5$ shifted the Curite temperature of these glass-ceramics. The glass composition which was able to be melted at 145$0^{\circ}C$ and moulded as homogeneous glass phase without devitrification should contain $Al_2O_3$.$2SiO_2$ more than 30 mole %. The more the amount of additive BaO increased, the more dielectric constant increased. When the maximum heat-treatment temperature was 105$0^{\circ}C$, we obtained higher dielectric constant than that of 95$0^{\circ}C$. The dielectric constant and the dielectric loss were stable at frequencies between 5$\times$104 and 107 cycle per second. When $Na_2O$ and $Nb_2O_5$ were added, the Curie temperature, presented at 14$0^{\circ}C$ to 15$0^{\circ}C$, shifted to lower temperature. Therefore, the glass-ceramics having high dielectric constant at room temperature were obtained.

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Properties of Potashborosilicate Glass-ceramic Substrate by adding Al2O3 (Al2O3 첨가에 따른 potashborosilicate glass ceramic 기판의 특성변화에 관한연구)

  • 김용철
    • Journal of the Microelectronics and Packaging Society
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    • v.5 no.2
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    • pp.53-58
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    • 1998
  • Sintering and dielectric characteristics of substrates were estimated by mixing rate of alumina and potashborosilicate glass(PBSG) powders. PBSG powders were used 7761(corning code)and alumina powders were used in extra pure rate(99.9%) and had 0.1 ${\mu}$m mean size. After ball milling with organic additives green sheets which were casted by doctor blade machine were sintered at 800$^{\circ}C$ for 1∼3hrs. Microstructure, linear shrinkage and dielectric constant of substrates were surveyed in order to fabricate low-dielectric and low tem-perature sintering substrate.